Dual Operational Amplifier,
7 MHz Bandwidth with
Shutdown
NCS20282
The NCS20282 high precision op amp features a wide bandwidth
along with shutdown. These amplifiers provide low bias current useful
for transimpedance applications. The wide bandwidth eases the design
of active filters. The NCS20282 is specified for operation from
−40°C
to +125°C.
Features
www.onsemi.com
•
•
•
•
•
•
•
•
High Bandwidth: 7 MHz typical
Low Bias Current: 50 pA typical
Rail−to−Rail Input/Output
Shutdown Current: 1
mA
max
Offset Voltage: 1.5 mV max
Offset Drift: 10
mV/°C
max
Supply Voltage: 2.5 V to 5.5 V
These Devices are Pb−free, Halogen Free/BFR Free and are RoHS
Compliant
Transducer Applications
Sensor Conditioning
Medical Instrumentation
Impedance Sensing
WLCSP9
CASE 567UW
WLCSP9
CASE 567YD
MARKING DIAGRAM
AAA
AYW
AAA = Specific Device Code
A
= Assembly Location
Y
= Year
W = Work Week
(Note: Microdot may be in either location)
Typical Applications
•
•
•
•
PIN CONNECTIONS
A3
OUTB
A2
VDD
A1
OUTA
VDD
B3
−INB
B2
EN
B1
−INA
+INA
−INA
EN
+INB
−INB
+
−
+
−
A
OUTA
C3
+INB
C2
VSS
C1
+INA
Package Bottom View (Bump Up)
B
OUTB
ORDERING INFORMATION
See detailed ordering, marking and shipping information in the
package dimensions section on page 9 of this data sheet.
VSS
This document contains information on some products that are still under development.
ON Semiconductor reserves the right to change or discontinue these products without
notice.
©
Semiconductor Components Industries, LLC, 2020
August, 2020
−
Rev. 0
1
Publication Order Number:
NCS20282/D
NCS20282
Table 1. ABSOLUTE MAXIMUM RATINGS
Over operating free−air temperature, unless otherwise stated.
Parameter
Supply Voltage (VDD− VSS)
INPUT AND OUTPUT PINS
Input Voltage (Note 1)
Input Current (Note 1)
Output Pin Voltage, Disabled
Output Short Circuit Current (Note 2)
TEMPERATURE
Operating Temperature
Storage Temperature
Junction Temperature
ESD RATINGS
(Note 3)
Human Body Model (HBM)
Charged Device Model (CDM)
OTHER RATINGS
Latch−up Current (Note 4)
MSL
100
Level 1
mA
2000
1000
V
V
–40 to +125
–65 to +150
+150
°C
°C
°C
(V
SS
– 0.5) to 7
±5
7
Continuous
V
mA
V
Rating
7
Unit
V
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality
should not be assumed, damage may occur and reliability may be affected.
1. The input voltage at any pin may exceed the voltage shown if the current at that pin is limited to 5 mA.
2. Short−circuit to ground.
3. This device series incorporates ESD protection and is tested by the following methods:
ESD Human Body Model tested per JEDEC standard JS−001−2017
ESD Charged Device Model tested per JEDEC standard JS−002−2014
4. Latch−up Current tested per JEDEC standard: JESD78
Table 2. THERMAL INFORMATION
Parameter
Thermal Resistance
Junction to Ambient
Symbol
Q
JA
Cu Area mm
2
10
25
40
80
140
250
350
500
650
800
NOTE:
Four layer JSEC JESD51−7
1.0 oz
301
263
246
229
220
211
206
200
197
194
2.0 oz
263
230
215
204
196
188
183
179
175
173
Unit
°C/W
Table 3. OPERATING CONDITIONS
Parameter
Supply Voltage (V
DD
−
V
SS
)
Specified Operating Temperature Range
Input Common Mode Voltage Range
Symbol
V
S
T
A
V
CM
Range
2.5 to 5.5
−40
to +125
V
SS
to V
DD
Units
V
°C
V
Functional operation above the stresses listed in the Recommended Operating Ranges is not implied. Extended exposure to stresses beyond
the Recommended Operating Ranges limits may affect device reliability.
www.onsemi.com
2
NCS20282
Table 4. ELECTRICAL CHARACTERISTICS:
V
S
= 2.5 V to 5.5 V
At T
A
= +25°C, R
L
= 10 kW, V
CM
= V
OUT
= midsupply, Enable input connected to V
DD
, unless otherwise noted.
Boldface
limits apply over the specified temperature range, T
A
= –40°C to +125°C, guaranteed by characterization and/or design.
Parameter
INPUT CHARACTERISTICS
Offset Voltage
Offset Voltage Drift vs Temp
Input Bias Current (Note 5)
Input Offset Current
Input Common−Mode Voltage Range
Common Mode Rejection Ratio
Input Resistance
Input Capacitance
OUTPUT CHARACTERISTICS
Open Loop Voltage Gain
Closed Loop Output Impedance
Output Voltage High, Referenced to V
DD
Output Voltage Low, Referenced to V
SS
Short Circuit Current (Note 5)
Capacitive Load Drive (Note 5)
DYNAMIC PERFORMANCE
Gain Bandwidth Product (Note 5)
Gain Margin
Phase Margin
Slew Rate
Overload Recovery Time
NOISE PERFORMANCE
Voltage Noise Density
Current Noise Density
POWER SUPPLY
Power Supply Rejection Ratio
Shutdown Enable Time (Notes 5, 6)
Shutdown Disable Time (Note 6)
Shutdown Leakage
Enable Input Threshold Voltage
Enable Input Leakage Current
Quiescent Current
Input
Output
V
th(EN)
I
Enable
I
Q
PSRR
t
ON
t
OFF
V
IN
= V
S
+400 mV
V
OUT
= V
S
+1 V
Operating
Disabled
Enable = + 5.0 V
Enable = V
SS
Per Channel
No load
Quiescent
Shutdown
1.1
1.1
850
0.3
1300
1
mA
1.3
0.5
mA
90
120
30
30
500
500
V
50
dB
ms
ms
nA
e
N
i
N
f
IN
= 10 kHz
f
IN
= 1 Hz
20
300
nV/√Hz
fA/√Hz
GBW
A
M
Y
M
SR
t
OR
V
S
= 3 V;
R
L
= 10 kW, C
L
= 100 pF
C
L
= 100 pF
C
L
= 100 pF
A
V
= +1
V
IN
X A
V
> V
S
5.4
7
50
55
5
1
MHz
dB
°
V/ms
ms
A
VOL
Z
OUT_CL
V
OH
V
OL
I
SC
C
L
Sinking Current
Sourcing Current
0.4 V
≤
V
OUT
≤
V
DD
– 0.4 V
See Figure 23
96
116
See
Figure 23
V
DD
−3
V
SS
+6
10
10
100
V
DD
−10
V
SS
+10
15
15
300
pF
dB
W
mV
mV
mA
V
OS
DV
OS
/DT
I
IB
I
OS
V
CM
CMRR
R
IN
C
IN
V
CM
=
−0.1V
to (V
DD
+0.1V)
Differential
Common Mode
Differential
Common Mode
66
300
2
50
10
V
SS
to V
DD
86
10
10
2
5
pF
1500
10
800
mV
mV/°C
pA
pA
V
dB
GW
Symbol
Conditions
Min
Typ
Max
Units
5. Guaranteed by design and/or characterization
6. Shutdown Disable Time (t
OFF
) and Enable Time (t
ON
) are defined as the time between the 50% point of the signal applied to the EN pin and
the point at which the output voltage reaches the 10% (disable) or 90% (enable) level.
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
www.onsemi.com
3
NCS20282
TYPICAL CHARACTERISTICS
Figure 1. CMRR vs. Frequency
Figure 2. PSRR vs. Frequency
Figure 3. Input Bias Current vs.
V
CM
at V
S
= 2.5 V
Figure 4. Input Bias Current vs.
V
CM
at V
S
= 3.3 V
www.onsemi.com
4
NCS20282
TYPICAL CHARACTERISTICS
Figure 5. Input Bias Current vs.
V
CM
at V
S
= 5.5 V
Figure 6. Input Offset Current vs.
V
CM
at V
S
= 2.5 V
Figure 7. Input Offset Current vs.
V
CM
at V
S
= 3.3 V
Figure 8. Input Offset Current vs.
V
CM
at V
S
= 5.5 V
www.onsemi.com
5