NCV8170
Ultra‐Low I
Q
150 mA
CMOS LDO Regulator
The NCV8170 series of CMOS low dropout regulators are designed
specifically for portable battery-powered applications which require
ultra-low quiescent current. The ultra-low consumption of typ. 500 nA
ensures long battery life and dynamic transient boost feature improves
device transient response for wireless communication applications.
The device is available in small 1
×
1 mm xDFN4 and SOT−563
packages.
Features
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6
1
XDFN4
MX SUFFIX
CASE 711AJ
1
SOT−563
XV SUFFIX
CASE 463A
•
•
•
•
•
•
•
•
•
•
•
Operating Input Voltage Range: 2.2 V to 5.5 V
Output Voltage Range: 1.2 V to 3.6 V (0.1 V Steps)
Ultra-Low Quiescent Current Typ. 0.5
mA
Low Dropout: 170 mV Typ. at 150 mA
High Output Voltage Accuracy
±1%
Stable with Ceramic Capacitors 1
mF
Over-Current Protection
Thermal Shutdown Protection
NCV8170A for Active Discharge Option
Available in Small 1
×
1 mm xDFN4 and SOT−563 Packages
These are Pb-Free Devices
MARKING DIAGRAMS
XDFN4
XX M
1
XX = Specific Device Code
M = Date Code
SOT−563
XX MG
1
XX = Specific Device Code
M = Month Code
G
= Pb−Free Package
Typical Applications
•
Battery Powered Equipments
•
Portable Communication Equipments
•
Cameras, Image Sensors and Camcorders
V
IN
IN
NCV8170
C
IN
1
mF
EN
GND
C
OUT
1
mF
OUT
V
OUT
ORDERING INFORMATION
See detailed ordering, marking and shipping information on
page 19 of this data sheet.
Figure 1. Typical Application Schematic
©
Semiconductor Components Industries, LLC, 2015
1
December, 2015 − Rev. 5
Publication Order Number:
NCV8170/D
NCV8170
PIN FUNCTION DESCRIPTION
Pin No.
XDFN4
4
2
3
1
EPAD
4
5
Pin No.
SOT−563
1
2
6
3
Pin Name
IN
GND
EN
OUT
EPAD
NC
GND
Power Supply Input Voltage
Power Supply Ground
Chip Enable Pin (Active “H”)
Output Pin
Internally Connected to GND
No Connect
Power Supply Ground
Description
ABSOLUTE MAXIMUM RATINGS
Symbol
V
IN
V
OUT
V
CE
T
J(MAX)
T
STG
ESD
HBM
ESD
MM
Input Voltage (Note 1)
Output Voltage
Chip Enable Input
Maximum Junction Temperature
Storage Temperature
ESD Capability, Human Body Model (Note 2)
ESD Capability, Machine Model (Note 2)
Rating
Value
6.0
−0.3 to V
IN
+ 0.3
−0.3 to 6.0
125
−55 to 150
2000
200
Unit
V
V
V
°C
°C
V
V
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality
should not be assumed, damage may occur and reliability may be affected.
1. Refer to ELECTRICAL CHARACTERISTICS and APPLICATION INFORMATION for Safe Operating Area.
2. This device series incorporates ESD protection and is tested by the following methods:
ESD Human Body Model tested per AEC-Q100-002 (EIA/JESD22-A114)
ESD Machine Model tested per AEC-Q100-003 (EIA/JESD22-A115)
Latchup Current Maximum Rating tested per JEDEC standard: JESD78
THERMAL CHARACTERISTICS
Symbol
R
qJA
Rating
Thermal Characteristics, Thermal Resistance, Junction-to-Air
XDFN4 1
×
1 mm
SOT−563
Value
250
200
Unit
°C/W
Figure 2. Simplified Block Diagram
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2
NCV8170
ELECTRICAL CHARACTERISTICS − VOLTAGE VERSION 1.2 V
(−40°C
≤
T
J
≤
125°C; V
IN
= 2.5 V; I
OUT
= 1 mA, C
IN
= C
OUT
= 1.0
mF,
unless otherwise noted. Typical values are at T
A
= +25°C.) (Note 3)
Symbol
V
IN
V
OUT
Parameter
Operating Input Voltage
Output Voltage
T
A
= +25°C
−40°C
≤
T
J
≤
125°C
Line
Reg
Load
Reg
V
DO
I
OUT
I
SC
I
Q
I
STB
V
ENH
V
ENL
I
EN
PSRR
Line Regulation
Load Regulation
Dropout Voltage
Output Current
Short Circuit Current Limit
Quiescent Current
Standby Current
EN Pin Threshold Voltage
EN Pin Threshold Voltage
EN Pin Current
Power Supply Rejection Ratio
2.5 V < V
IN
≤
5.5 V, I
OUT
= 1 mA
0 mA < I
OUT
≤
150 mA, V
IN
= 2.5 V
(Note 4)
(Note 5)
V
OUT
= 0 V
I
OUT
= 0 mA
V
EN
= 0 V, T
J
= 25°C
EN Input Voltage “H”
EN Input Voltage “L”
V
EN
≤
V
IN
≤
5.5 V (Note 6)
f = 1 kHz, V
IN
= 2.2 V + 200 mVpp Modulation
I
OUT
= 150 mA
I
OUT
= 10 mA
V
IN
= 5.5 V, I
OUT
= 1 mA,
f = 100 Hz to 1 MHz, C
OUT
= 1
mF
V
IN
= 5.5 V, V
EN
= 0 V (Note 6)
Temperature Increasing from T
J
= +25°C
(Note 6)
Temperature Falling from T
SD
(Note 6)
Test Conditions
Min
2.2
1.188
1.176
−
−20
−
150
−
−
−
1.2
−
−
−
−
−
−
−
−
Typ
−
1.2
1.2
0.05
1
−
−
225
0.5
0.1
−
−
10
57
63
85
100
175
25
Max
5.5
1.212
1.224
0.20
20
−
−
−
0.9
0.5
−
0.4
−
−
−
−
−
−
−
mV
rms
W
°C
°C
%/V
mV
mV
mA
mA
mA
mA
V
V
nA
dB
Unit
V
V
V
NOISE
R
LOW
T
SD
T
SDH
Output Noise Voltage
Active Output Discharge
Resistance (A option only)
Thermal Shutdown Temperature
Thermal Shutdown Hysteresis
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
3. Performance guaranteed over the indicated operating temperature range by design and/or characterization production tested at
T
J
= T
A
= 25°C. Low duty cycle pulse techniques are used during testing to maintain the junction temperature as close to ambient as possible.
4. Not Characterized at V
IN
= 2.2 V, V
OUT
= 1.2 V, I
OUT
= 150 mA.
5. Respect SOA.
6. Guaranteed by design and characterization.
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3
NCV8170
ELECTRICAL CHARACTERISTICS − VOLTAGE VERSION 1.5 V
(−40°C
≤
T
J
≤
125°C; V
IN
= 2.5 V; I
OUT
= 1 mA, C
IN
= C
OUT
= 1.0
mF,
unless otherwise noted. Typical values are at T
A
= +25°C.) (Note 7)
Symbol
V
IN
V
OUT
Parameter
Operating Input Voltage
Output Voltage
T
A
= +25°C
−40°C
≤
T
J
≤
125°C
Line
Reg
Load
Reg
V
DO
I
OUT
I
SC
I
Q
I
STB
V
ENH
V
ENL
I
EN
PSRR
V
NOISE
R
LOW
T
SD
T
SDH
Line Regulation
Load Regulation
Dropout Voltage
Output Current
Short Circuit Current Limit
Quiescent Current
Standby Current
EN Pin Threshold Voltage
EN Pin Threshold Voltage
EN Pin Current
Power Supply Rejection Ratio
Output Noise Voltage
Active Output Discharge
Resistance (A option only)
Thermal Shutdown Temperature
Thermal Shutdown Hysteresis
4.3 V < V
IN
≤
5.5 V, I
OUT
= 1 mA
0 mA < I
OUT
≤
150 mA, V
IN
= 4.3 V
I
OUT
= 150 mA (Note 8)
(Note 9)
V
OUT
= 0 V
I
OUT
= 0 mA
V
EN
= 0 V, T
J
= 25°C
EN Input Voltage “H”
EN Input Voltage “L”
V
EN
≤
V
IN
≤
5.5 V (Note 10)
f = 1 kHz, V
IN
= 2.5 V + 200 mVpp Modulation
I
OUT
= 150 mA
V
IN
= 5.5 V, I
OUT
= 1 mA,
f = 100 Hz to 1 MHz, C
OUT
= 1
mF
V
IN
= 5.5 V, V
EN
= 0 V (Note 10)
Temperature Increasing from T
J
= +25°C
(Note 10)
Temperature Falling from T
SD
(Note 10)
Test Conditions
Min
2.2
1.485
1.470
−
−20
−
150
−
−
−
1.2
−
−
−
−
−
−
−
Typ
−
1.5
1.5
0.05
−
−
−
225
0.5
0.1
−
−
10
57
90
100
175
25
Max
5.5
1.515
1.530
0.20
20
−
−
−
0.9
0.5
−
0.4
−
−
−
−
−
−
mV
rms
W
°C
°C
%/V
mV
mV
mA
mA
mA
mA
V
V
nA
dB
Unit
V
V
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
7. Performance guaranteed over the indicated operating temperature range by design and/or characterization production tested at
T
J
= T
A
= 25°C. Low duty cycle pulse techniques are used during testing to maintain the junction temperature as close to ambient as possible.
8. Not Characterized at V
IN
= 2.2 V, V
OUT
= 1.5 V, I
OUT
= 150 mA.
9. Respect SOA.
10. Guaranteed by design and characterization.
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4
NCV8170
ELECTRICAL CHARACTERISTICS − VOLTAGE VERSION 1.8 V
(−40°C
≤
T
J
≤
125°C; V
IN
= 2.8 V; I
OUT
= 1 mA, C
IN
= C
OUT
= 1.0
mF,
unless otherwise noted. Typical values are at T
A
= +25°C.) (Note 11)
Symbol
V
IN
V
OUT
Parameter
Operating Input Voltage
Output Voltage
T
A
= +25°C
−40°C
≤
T
J
≤
125°C
Line
Reg
Load
Reg
V
DO
I
OUT
I
SC
I
Q
I
STB
V
ENH
V
ENL
I
EN
PSRR
V
NOISE
R
LOW
T
SD
T
SDH
Line Regulation
Load Regulation
Dropout Voltage
Output Current
Short Circuit Current Limit
Quiescent Current
Standby Current
EN Pin Threshold Voltage
EN Pin Threshold Voltage
EN Pull Down Current
Power Supply Rejection Ratio
Output Noise Voltage
Active Output Discharge
Resistance (A option only)
Thermal Shutdown Temperature
Thermal Shutdown Hysteresis
2.8 V < V
IN
≤
5.5 V, I
OUT
= 1 mA
0 mA < I
OUT
≤
150 mA, V
IN
= 2.8 V
I
OUT
= 150 mA (Note 12)
(Note 13)
V
OUT
= 0 V
I
OUT
= 0 mA
V
EN
= 0 V, T
J
= 25°C
EN Input Voltage “H”
EN Input Voltage “L”
V
EN
≤
V
IN
≤
5.5 V (Note 14)
f = 1 kHz, V
IN
= 2.8 V + 200 mVpp Modulation
I
OUT
= 150 mA
V
IN
= 5.5 V, I
OUT
= 1 mA
f = 100 Hz to 1 MHz, C
OUT
= 1
mF
V
IN
= 5.5 V, V
EN
= 0 V (Note 14)
Temperature Increasing from T
J
= +25°C
(Note 14)
Temperature Falling from T
SD
(Note 14)
Test Conditions
Min
2.2
1.782
1.764
−
−20
−
150
−
−
−
1.2
−
−
−
−
−
−
−
Typ
−
1.8
1.8
0.05
1
350
−
225
0.5
0.1
−
−
10
57
95
100
175
25
Max
5.5
1.818
1.836
0.20
20
500
−
−
0.9
0.5
−
0.4
−
−
−
−
−
−
%/V
mV
mV
mA
mA
mA
mA
V
V
nA
dB
mV
rms
W
°C
°C
Unit
V
V
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
11. Performance guaranteed over the indicated operating temperature range by design and/or characterization production tested at
T
J
= T
A
= 25°C. Low duty cycle pulse techniques are used during testing to maintain the junction temperature as close to ambient as possible.
12. Characterized when V
OUT
falls 54 mV below the regulated voltage and only for devices with V
OUT
= 1.8 V.
13. Respect SOA.
14. Guaranteed by design and characterization.
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