To our customers,
Old Company Name in Catalogs and Other Documents
On April 1
st
, 2010, NEC Electronics Corporation merged with Renesas Technology
Corporation, and Renesas
Electronics Corporation
took over all the business of both
companies.
Therefore, although the old company name remains in this document, it is a valid
Renesas
Electronics document. We appreciate your understanding.
Renesas Electronics website: http://www.renesas.com
April 1
st
, 2010
Renesas Electronics Corporation
Issued by:
Renesas Electronics Corporation
(http://www.renesas.com)
Send any inquiries to http://www.renesas.com/inquiry.
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1.
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“Standard”:
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(Note 1) “Renesas Electronics” as used in this document means Renesas Electronics Corporation and also includes its majority-
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(Note 2) “Renesas Electronics product(s)” means any product developed or manufactured by or for Renesas Electronics.
DATA SHEET
PHOTO DIODE
NDL5421P Series
1 000 to 1 600 nm OPTICAL FIBER COMMUNICATIONS
φ
50
µ
m InGaAs PIN PHOTO DIODE MODULE
DESCRIPTION
NDL5421P Series is an InGaAs PIN photo diode module with multimode fiber. It is designed for 2.5Gb/s optical
fiber communication systems and covers the wavelength range between 1 000 and 1 600 nm with high efficiency.
FEATURES
• Small dark current
• High quantum efficiency
• Detecting area size
• Low operating voltage
• Low terminal capacitance
• High speed response
I
D
= 0.1 nA
η
= 86 % @
λ
= 1 300 nm
η
= 75 % @
λ
= 1 550 nm
φ
50
µ
m
V
R
= 5 V
f
C
= 2.5 GHz min.
C
t
= 0.7 pF @ f = 1.0 MHz, V
R
= 5 V
d
• Coaxial module with multimode fiber (GI-50/125) or optional siglemode fiber (SM-9/125)
Pr
od
uc
t
NDL5421P2
Optical Fiber:
GI-50/125
Length: 1 m MIN.
Shrunk tube
NDL5421P
Optical Fiber:
GI-50/125
Length: 1 m MIN.
nt
in
ue
PACKAGE DIMENSIONS
in millimeters
•
NDL5421P1
Optical Fiber:
GI-50/125
Length: 1 m MIN.
Shrunk tube
Shrunk tube
30.0 MAX.
co
φ
6.0
+0.0
–0.1
12.5 MIN. 4.0±0.1
6.9±0.3
6.9±0.3
is
12.5 MIN.
3.9±0.5
φ
6.0
+0.0
–0.1
φ
6.0
+0.0
–0.1
φ
0.45
2–
φ
2.2
2.5±0.1
0.5±0.1
D
2–
φ
2.5
2
3
1
12.5 MIN.
30.0 MAX.
φ
2.0
12.0±0.1
16.0±0.2
φ
2.5
30.0 MAX.
φ
2.5
14.0±0.1
φ
2.5
φ
2.0
φ
2.0
18.0±0.1
PIN CONNECTIONS
1 Anode (Negative)
2 Cathode (Positive)
3 Case
3
2
1
The information in this document is subject to change without notice.
Document No. P10262EJ2V0DS00 (2nd edition)
Date Published June 1996 P
Printed in Japan
The mark
•
shows major revised points.
4.0±0.3
2
1
3.0±0.3
7.0±0.3
1.5
6.0
+0.0
–0.1
3
2
3
1
7.0±0.15
©
1995
NDL5421P Series
•
ORDERING INFORMATION
Part Number
NDL5421P
NDL5421PC
NDL5421PD
NDL5421PS
NDL5421PSC
NDL5421PSD
NDL5421P1
NDL5421P1C
NDL5421P1D
NDL5421P1S
NDL5421P1SC
NDL5421P1SD
NDL5421P2
NDL5421P2C
NDL5421P2D
NDL5421P2S
NDL5421P2SC
NDL5421P2SD
Available Connector
Without Connector
With FC-PC Connector
With SC-PC Connector
Without Connector
With FC-PC Connector
With SC-PC Connector
Without Connector
With FC-PC Connector
With SC-PC Connector
Without Connector
With FC-PC Connector
With SC-PC Connector
Without Connector
With FC-PC Connector
With SC-PC Connector
Without Connector
With FC-PC Connector
With SC-PC Connector
SM-9/125
GI-50/125
SM-9/125
GI-50/125
Flat Mount Flange
SM-9/125
GI-50/125
Description
No Flange
Vertical Flange
ABSOLUTE MAXIMUM RATINGS (T
C
= 25
°
C, unless otherwise specified)
Parameter
Reverse Voltage
Forward Current
Optical Input Power
Operating Case Temperature
Storage Temperature
Symbol
V
R
I
F
Ratings
20
10
8
Unit
V
mA
mW
°C
°C
co
ELECTRO-OPTICAL CHARACTERISTICS (T
C
= 25
°
C, unless otherwise specified)
is
Parameter
nt
in
ue
P
in
T
C
−40
to +85
−40
to +85
T
stg
Symbol
I
D
C
t
V
R
= 5 V
V
R
= 5 V, f = 1.0 MHz
λ
= 1 300 nm
λ
= 1 550 nm
Conditions
d
MIN.
TYP.
0.1
0.7
75
64
0.78
0.80
2.5
86
75
0.89
0.94
GHz
A/W
MAX.
1.0
0.9
Unit
nA
pF
%
λ
= 1 300 nm
λ
= 1 550 nm
V
R
= 5 V, R
L
= 50
Ω, λ
= 1 300 nm
D
Dark Current
Terminal Capacitance
Quantum Efficiency
η
Responsivity
S
Cut-off Frequency
f
C
2
Pr
od
uc
t
NDL5421P Series
TYPICAL CHARACTERISTICS (T
C
= 25
°
C, unless otherwise specified)
TEMPERATURE DEPENDENCE
OF RESPONSIVITY
10
λ
= 1 300 nm
•
100
80
60
40
20
0
0.9
Responsivity (Relative Value)
∆
S/S (%)
WAVELENGTH DEPENDENCE
OF QUANTUM EFFICIENCY
Quantum Efficiency
η
(%)
0
1.0
1.1
1.2 1.3 1.4 1.5
Wavelength
λ
(
µ
m)
1.6
1.7
REVERSE VOLTAGE DEPENDENCE
OF DARK CURRENT
10
Dark Current I
D
(nA)
1.0
50 ˚C
d
T
C
= 75 ˚C
nt
in
ue
Dark Current I
D
(nA)
25 ˚C
0.1
0 ˚C
0.01
co
–25 ˚C
Terminal Capacitance C
t
(pF)
is
D
0.001
0
10
Reverse Voltage V
R
(V)
20
0.3
0.1
0.3
1
3
Reverse Voltage V
R
(V)
10
Pr
od
uc
t
–10
–60
–40
40
60
–20
0
20
Case Temperature T
C
(˚C)
80
100
10
1
TEMPERATURE DEPENDENCE
OF DARK CURRENT
V
R
= 5 V
10
0
10
–1
10
–2
10
–3
–60
–40 –20
0
60
20 40
Case Temperature T
C
(˚C)
80
100
REVERSE VOLTAGE DEPENDENCE
OF TERMINAL CAPACITANCE
2
f = 1.0 MHz
1
0.5
3
