DATA SHEET
PHOTO DIODE
NDL5531P Series
1 000 to 1 600 nm OPTICAL FIBER COMMUNICATIONS
φ
30
µ
m InGaAs AVALANCHE PHOTO DIODE MODULE
DESCRIPTION
NDL5531P Series is an InGaAs avalanche photo diode module with single mode fiber. It is designed for detectors
of long wavelength transmission systems. The series covers the wavelength range between 1 000 and 1 600 nm.
FEATURES
•
•
•
Small dark current
Small terminal capacitance
High quantum efficiency
High speed response
Detecting area size
I
D
= 5 nA
C
t
= 0.35 pF @ 0.9 V
(BR)R
η
= 90 % @
λ
= 1 300 nm, M = 1
η
= 77 % @
λ
= 1 550 nm, M = 1
f
C
= 2.5 G H z @ M = 10
•
•
•
φ
3 0
µ
m
Coaxial module with single mode fiber (SM-9/125)
PACKAGE DIMENSIONS
in millimeters
•
NDL5531P2
Optical Fiber:
SM-9/125
Length: 1 m MIN.
NDL5531P
Optical Fiber:
SM-9/125
Length: 1 m MIN.
Shrunk tube
NDL5531P1
Optical Fiber:
SM-9/125
Length: 1 m MIN.
Shrunk tube
Shrunk tube
30.0 MAX.
φ
6.0
+0.0
–0.1
12.5 MIN. 4.0±0.1
6.9±0.3
6.9±0.3
12.5 MIN.
3.9±0.5
φ
6.0
+0.0
–0.1
φ
6.0
+0.0
–0.1
φ
0.45
2–
φ
2.2
2.5±0.1
0.5±0.1
2–
φ
2.5
2
3
1
φ
2.0
12.5 MIN.
30.0 MAX.
12.0±0.1
16.0±0.2
φ
2.5
30.0 MAX.
φ
2.5
14.0±0.1
φ
2.5
φ
2.0
φ
2.0
18.0±0.1
PIN CONNECTIONS
1 Anode (Negative)
2 Cathode (Positive)
3 Case
3
2
1
The information in this document is subject to change without notice.
Document No. P11352EJ2V0DS00 (2nd edition)
Date Published July 1996 P
Printed in Japan
The mark
•
shows major revised points.
4.0±0.3
2
1
3.0±0.3
7.0±0.3
1.5
6.0
+0.0
–0.1
3
2
3
1
©
7.0±0.15
1996
NDL5531P Series
•
ORDERING INFORMATION
Part Number
NDL5531P
NDL5531PC
NDL5531PD
NDL5531P1
NDL5531P1C
NDL5531P1D
NDL5531P2
NDL5531P2C
NDL5531P2D
Available Connector
Without Connector
With FC-PC Connector
With SC-PC Connector
Without Connector
With FC-PC Connector
With SC-PC Connector
Without Connector
With FC-PC Connector
With SC-PC Connector
Vertical Flange
Flat Mount Flange
Description
No Flange
ABSOLUTE MAXIMUM RATINGS (T
C
= 25
°
C, unless otherwise specified)
Parameter
Forward Current
Reverse Current
Operating Case Temperature
Storage Temperature
Symbol
I
F
I
R
T
C
T
stg
Ratings
10
0.5
−40
to +85
−40
to +85
Unit
mA
mA
°C
°C
ELECTRO-OPTICAL CHARACTERISTICS (T
C
= 25
°
C)
Parameter
Reverse Breakdown Voltage
Temperature Coefficient of
Reverse Breakdown Voltage
Dark Current
Multiplied Dark Current
Terminal Capacitance
Cut-off Frequency
Quantum Efficiency
Symbol
V
(BR)R
δ
*1
V
R
= V
(BR)R
×
0.9
M = 2 to 10
V
R
= V
(BR)R
×
0.9, f = 1 MHz
M = 10
λ
= 1 300 nm, M = 1
λ
= 1 550 nm, M = 1
Responsivity
S
λ
= 1 300 nm, M = 1
λ
= 1 550 nm, M = 1
Multiplication Factor
M
λ
= 1 300 nm, I
po
= 1.0
µ
A
V
R
= V (@ I
D
= 1
µ
A )
Excess Noise Factor
*2
Conditions
I
D
= 100
µ
A
MIN.
50
TYP.
70
0.2
MAX.
100
Unit
V
%/°C
I
D
I
DM
C
t
f
C
5
1
0.35
2.5
76
65
0.80
0.81
30
90
77
0.94
0.96
40
25
5
0.60
nA
nA
pF
GHz
%
η
A/W
x
F
λ
= 1 300 nm, 1 550 nm, I
po
= 1.0
µ
A
M = 10, f = 35 MHz, B = 1 MHz
0.7
5
*1
δ
=
V
(BR)R
<
25
°C
+
∆
T
°C > −V
(BR)R
<
25
°C >
∆
T
°C ⋅
V
(BR)R
<
25
°C >
X
*2
F = M
2
NDL5531P Series
TYPICAL CHARACTERISTICS (T
C
= 25
°
C, unless otherwise specified)
Responsivity (Relative Value)
∆
S/S (%)
•
WAVELENGTH DEPENDENCE
OF QUANTUM EFFICIENCY
100
Quantum Efficiency
η
(%)
TEMPERATURE DEPENDENCE OF
RESPONSIVITY
10
λ
= 1 300 nm
80
60
40
20
0
0.9
0
1.0
1.1
1.2
1.3
1.4
1.5
1.6
1.7
–10
–60 –40
Wavelength
λ
(
µ
m)
–20
20
0
40 60
80 100
Case Temperature T
C
(˚C)
DARK CURRENT and PHOTO
CURRENT vs. REVERSE VOLTAGE
10
–3
λ
= 1 300 nm
I
po
= 1.0
µ
A
Dark Current I
D
(A)
DARK CURRENT vs.
REVERSE VOLTAGE
10
–6
10
–7
T
C
= 85 ˚C
T
C
= 65 ˚C
10
–4
10
–8
10
Dark Current, Photo Current I
D
, lph (A)
–5
Iph
10
–9
T
C
= 25 ˚C
T
C
= –20 ˚C
–10
10
10
–6
0
20
40
60
80
Reverse Voltage V
R
(V)
100
10
–7
MULTIPLICATION FACTOR vs.
REVERSE VOLTAGE
10
3
Multiplication Factor M
T
C
= 65 ˚C
10
–8
10
2
T
C
= –20 ˚C
10
–9
I
D
10
1
T
C
= 25 ˚C
T
C
= 85 ˚C
10
–10
10
0
0
20
40
60
80
Reverse Voltage V
R
(V)
100
0
20
40
60
80
Reverse Voltage V
R
(V)
100
3
NDL5531P Series
TEMPERATURE DEPENDENCE OF DARK
CURRENT vs. MULTIPLIED DARK CURRENT
10
–6
10
–7
10
–8
Dark Current, Multiplied Dark Current I
D
, I
DM
(A)
TERMINAL CAPACITANCE vs.
REVERSE VOLTAGE
Terminal Capacitance C
t
(pF)
λ
= 1 300 nm
I
D
@ V
R
= 0.9 V
(BR)R
I
DM
2
1
0.5
10
–9
10
–10
10
–11
–60 –40
0.2
0.1
–20 0
20
40
60
Case Temperature T
C
(˚C)
80 100
1
2
5
10
20
Reverse Voltage V
R
(V)
50
100
CUT-OFF FREQUENCY vs.
MULTIPLICATION FACTOR
100
Cut-off Frequency f
C
(GHz)
FREQUENCY RESPONSE
9
6
Response (dB)
λ
= 1 300 nm
G
×
B
=
50 GHz
λ
= 1 300 nm
R
L
= 50
Ω
M = 10
10
3
0
–3
–6
–9
1
0.1
1
10
Multiplication Factor M
100
0
1.0
2.0
3.0
4.0
Frequency f (GHz)
5.0
EXCESS NOISE FACTOR vs.
MULTIPLICATION FACTOR
100
Excess Noise Factor F
50
20
10
5
2
1
1
1 300 nm ( ), 1 550 nm ( )
f = 35 MHz, B = 1 MHz
0.5
0.4
2
5
10
20
Multiplication Factor M
50
100
4
NDL5531P Series
HANDLING PRECAUTION for PD/APD MODULE
The NEC PD/APD module has heat shrink tubing to protect the ferrule edge (*1) and the junction between the
ferrule and the module body (*2). In order to avoid breaking the fiber and/or optical coupling degradation, NEC
recommends the following handling precautions.
1. Do not make the fiber bend radius less than 30 mm (*3).
2. Do not bend the fiber within the 18 mm section from the module body (*4).
3. Do not stress the ferrule with a lateral force exceeding 500 g (*5).
30
fiber
m
m
m
in
(*3
)
(*1)
18 mm min. (*4)
ferrule (*5)
(*2)
module body
5
