SMD Type
N-Channel
MOSFET
NDT15N10
TO-252
+0.15
1.50
-0.15
MOSFET
Unit: mm
■
Features
●
R
DS(ON)
= 80mΩ @V
GS
= 10V,I
D
=8A
●
Low gate charge (Typ=24nC)
+0.2
9.70
-0.2
+0.15
6.50
-0.15
+0.2
5.30
-0.2
+0.1
2.30
-0.1
0.50
+0.8
-0.7
●
High switching speed
+0.1
0.80
-0.1
+0.15
0.50
-0.15
0.127
max
2.3
4 .60
+0.15
-0.15
+
0.60
- 0.1
0.1
+0.28
1.50
-0.1
+0.25
2.65
-0.1
+0.15
5.55
-0.15
●
Low C
RSS
(Typ=23pF)
1. Gate
2. Drain
3. Source
■
Absolute Maximum Ratings Ta = 25℃
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Current
Power Dissipation
T
C
=25℃
T
C
=70℃
T
C
=25℃,T
J
=150℃
T
C
=70℃,T
J
=150℃
Symbol
V
DS
V
GS
I
D
I
DM
P
D
R
thJC
T
J
T
stg
Rating
100
±20
14.7
13.6
59
34.7
22.2
3.6
150
-55 to 150
W
℃/W
℃
A
Unit
V
Thermal Resistance.Junction- to-Case (Note.1)
Junction Temperature
Storage Temperature Range
Note.1: The device mounted on 1in
2
FR4 board with 2 oz copper.
3
.8
0
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1
SMD Type
N-Channel
MOSFET
NDT15N10
■
Electrical Characteristics Ta = 25℃
Parameter
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Body Leakage Current
Gate Threshold Voltage
Static Drain-Source On-Resistance (Note.1)
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate-Resistance
Total Gate Charge
Gate Source Charge
Gate Drain Charge
Turn-On DelayTime
Turn-On Rise Time
Turn-Off DelayTime
Turn-Off Fall Time
Diode Forward Voltage
Symbol
V
DSS
I
DSS
I
GSS
V
GS(th)
R
DS(O
n
)
C
iss
C
oss
C
rss
Rg
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
V
SD
I
S
=8A,V
GS
=0V
V
GS
=10V, V
DS
=50V, R
L
=5Ω,R
GEN
=1Ω
V
GS
=0, V
DS
=0, f=1MHz
V
GS
=10V, V
DS
=80V, I
D
=10A
V
GS
=4.5V, V
DS
=80V, I
D
=10A
V
GS
=0V, V
DS
=15V, f=1MHz
Test Conditions
I
D
=250μA, V
GS
=0V
V
DS
=80V, V
GS
=0V
V
DS
=0V, V
GS
=±20V
V
DS
=V
GS
, I
D
=250μA
V
GS
=10V, I
D
=8A
MOSFET
Min
100
Typ
Max
1
±100
Unit
V
μA
nA
V
mΩ
pF
Ω
1
80
890
58
23
0.9
24
13
4.6
7.6
14
33
39
5
0.9
3
100
nC
ns
1.2
V
Note.1:Pulse test: pulse width≤300us, duty cycle≤2%, Guaranteed by design, not subject to production testing.
2
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SMD Type
N-Channel
MOSFET
NDT15N10
■
Typical Characterisitics
Drain Current vs. Drain-Source
Breakdown Voltage
MOSFET
300
250
200
150
100
50
0
Drain Current vs. Gate Threshold Voltage
300
V
DS
=V
GS
250
200
150
100
50
0
0
0
30
90
120
60
Drain-Source Breakdown Voltage, BV
DSS
(V)
0.4
0.8 1.2
2.0 2.4
1.6
Gate Threshold Voltage, V
TH
(V)
Drain-Source On-State Resistance
Characteristics
10
8
6
4
2
0
0
0.1
0.2 0.3
0.4 0.5
Drain to Source Voltage, V
DS
(V)
0.6
V
GS
=10V
Drain Current, I
D
(A)
Drain Current vs. Source to Drain Voltage
10
8
6
4
Drain Current, I
D
(A)
2
0
0
0.2
0.4
0.6
0.8
1.0
Source to Drain Voltage, V
SD
(V)
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