Data Sheet
NE3520S03
N-Channel GaAs HJ-FET, K Band Low Noise and High-Gain
FEATURES
•
Low noise figure and high associated gain:
NF = 0.65 dB TYP., G
a
= 13.5 dB TYP. @ f = 20 GHz, V
DS
= 2 V, I
D
= 10 mA
•
K band Micro-X plastic (S03) package
R09DS0029EJ0100
Rev.1.00
Oct 18, 2011
APPLICATIONS
•
20 GHz band DBS LNB
•
Other K band communication system
ORDERING INFORMATION
Part Number
NE3520S03-T1C
Order Number
NE3520S03-T1C-A
Package
S03 package
(Pb-Free)
Quantity
2 kpcs/reel
Marking
J
Supplying Form
•
Embossed tape 8 mm wide
•
Pin 4 (Gate) face the
perforation side of the tape
NE3520S03-T1D
NE3520S03-T1D-A
10 kpcs/reel
Remark
To order evaluation samples, please contact your nearby sales office.
Part number for sample order: NE3520S03
ABSOLUTE MAXIMUM RATINGS (T
A
= +25°C, unless otherwise specified)
Parameter
Drain to Source Voltage
Gate to Source Voltage
Drain Current
Gate Current
Total Power Dissipation
Channel Temperature
Note
Symbol
V
DS
V
GS
I
D
I
G
P
tot
T
ch
Ratings
4.0
–3.0
I
DSS
100
165
+125
Unit
V
V
mA
μA
mW
°C
°C
Storage Temperature
T
stg
–65 to +125
2
Note: Mounted on 1.08 cm
×
1.0 mm (t) glass epoxy PWB
CAUTION
Observe precautions when handling because these devices are sensitive to electrostatic discharge.
R09DS0029EJ0100 Rev.1.00
Oct 18, 2011
Page 1 of 8
NE3520S03
RECOMMENDED OPERATING RANGE (T
A
= +25°C, unless otherwise specified)
Parameter
Drain to Source Voltage
Drain Current
Input Power
Symbol
V
DS
I
D
P
in
MIN.
+1
5
–
TYP.
+2
10
–
MAX.
+3
15
0
Unit
V
mA
dBm
ELECTRICAL CHARACTERISTICS (T
A
= +25°C, unless otherwise specified)
Parameter
Gate to Source Leak Current
Saturated Drain Current
Gate to Source Cut-off Voltage
Transconductance
Noise Figure
Associated Gain
Symbol
I
GSO
I
DSS
V
GS (off)
gm
NF
G
a
Test Conditions
V
GS
= –3.0 V
V
DS
= 2 V, V
GS
= 0 V
V
DS
= 2 V, I
D
= 100
μA
V
DS
= 2 V, I
D
= 10 mA
V
DS
= 2 V, I
D
= 10 mA, f = 20 GHz
MIN.
–
25
–0.2
50
–
11.5
TYP.
0.5
40
–0.7
65
0.65
13.5
MAX.
10
70
–1.3
–
0.90
–
Unit
μA
mA
V
mS
dB
dB
R09DS0029EJ0100 Rev.1.00
Oct 18, 2011
Page 2 of 8
NE3520S03
TYPICAL CHARACTERISTICS (T
A
= +25°C, unless otherwise specified)
TOTAL POWER DISSIPATION
vs. AMBIENT TEMPERATURE
250
Total Power Dissipation P
tot
(mW)
Mounted on Glass Epoxy PCB
(1.08 cm
2
×
1.0 mm (t) )
200
150
100
50
0
50
100
150
200
250
Ambient Temperature T
A
(°C)
DRAIN CURRENT vs.
DRAIN TO SOURCE VOLTAGE
80
70
80
70
DRAIN CURRENT vs.
GATE TO SOURCE VOLTAGE
V
DS
= 2 V
Drain Current I
D
(mA)
50
40
30
20
10
0
0.0
1.0
2.0
Drain Current I
D
(mA)
60
V
GS
= 0 V
–0.1
V
–0.2
V
–0.3
V
–0.4
V
–0.5
V
3.0
4.0
60
50
40
30
20
10
0
–0.8
–0.6
–0.4
–0.2
0
Drain to Source Voltage V
DS
(V)
Gate to Source Voltage V
GS
(V)
MINIMUM NOISE FIGURE,
ASSOCIATED GAIN vs. FREQUENCY
1.2
20
MINIMUM NOISE FIGURE,
ASSOCIATED GAIN vs. DRAIN CURRENT
1.5
16
f = 20 GHz
V
DS
= 2 V
G
a
15
14
19
18
Minimum Noise Figure NF
min
(dB)
1.1
1.0
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
10
Minimum Noise Figure NF
min
(dB)
V
DS
= 2 V
I
D
= 10 mA
1.4
1.3
1.2
1.1
1.0
0.9
0.8
0.7
0.6
0.5
0
17
16
13
12
15
G
a
11
NF
min
14
13
12
10
9
8
7
6
25
NF
min
15
20
25
11
10
5
10
15
20
Frequency f (GHz)
Drain Current I
D
(mA)
Remark
The graphs indicate nominal characteristics.
R09DS0029EJ0100 Rev.1.00
Oct 18, 2011
Page 3 of 8
Associated Gain G
a
(dB)
Associated Gain G
a
(dB)
NE3520S03
S-PARAMETERS
S-parameters/Noise-parameters are provided on our web site in a form (S2P) that enables direct import to a microwave
circuit simulator without keyboard input.
Click here to download S-parameters.
[RF and Microwave]
→
[Device Parameters]
URL http://www2.renesas.com/microwave/
R09DS0029EJ0100 Rev.1.00
Oct 18, 2011
Page 4 of 8
NE3520S03
RF MEASURING LAYOUT PATTERN (REFERENCE ONLY) (UNIT: mm)
2.80
2.60
2.06
0.64
S–S2.2mm
0.74
0.54
1.60
Reference Plane
(Calibration Plane)
1.7
1.7
13.0
Reference Plane
(Calibration Plane)
6.0
2.2
φ
0.3 TH
RT/duroid 5880/ROGERS
t = 0.254 mm
εr
= 2.20
tan delta = 0.0009 @10 GHz
Au-flash plate
R09DS0029EJ0100 Rev.1.00
Oct 18, 2011
Page 5 of 8
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