INTEGRATED CIRCUITS
NE529
Voltage comparator
Product data
Supersedes data of 1994 Aug 31
File under Integrated Circuits, IC11 Handbook
2001 Aug 03
Philips
Semiconductors
Philips Semiconductors
Product data
Voltage comparator
NE529
DESCRIPTION
The NE529 is a high-speed analog voltage comparator which, for
the first time, mates state-of-the-art Schottky diode technology with
the conventional linear process. This allows simultaneous
fabrication of high-speed TTL gates with a precision linear amplifier
on a single monolithic chip.
PIN CONFIGURATIONS
D, N Packages
V
1 +
1
2
3
4
5
6
7
14
13
12
11
10
9
8
V
2 +
NC
INPUT A
STROBE A
NC
OUTPUT A
GND
OUTPUT B
FEATURES
INPUT B
NC
V
1 –
•
10 ns propagation delay
•
Complementary output gates
•
TTL or ECL compatible outputs
•
Wide common-mode and differential voltage range
•
Typical gain 5000
APPLICATIONS
NC
STROBE B
TOP VIEW
SL00267
Figure 1. Pin Configuration
•
A/D conversion
•
ECL-to-TTL interface
•
TTL-to-ECL interface
•
Memory sensing
•
Optical data coupling
BLOCK DIAGRAM
V
1 +
STROBE A
V
2 +
OUTPUT A
INPUT A
INPUT B
OUTPUT B
V
1 –
STROBE B
SL00269
Figure 2. Block Diagram
ORDERING INFORMATION
DESCRIPTION
14-Pin Plastic Dual In-Line Package (DIP)
14-Pin Small Outline (SO) Package
TEMPERATURE RANGE
0
°C
to +70
°C
0
°C
to +70
°C
ORDER CODE
NE529N
NE529D
DWG #
SOT27-1
SOT108-1
V2
+
V1 +
R1
20K
Q3
D1
D2
D3
R2
1.5K
R3
1.5K
Q4
Q5
Q12
750
R11
750
R12
Q13 Q14
6.13K
R9
Q10 Q11
D6
Q6
Q27
R4
V1 –
200
R5
300
R6
300
R7
100
R8
200
Q7
Q8
Q9
D7
D8
D9
STROBE B
D11
Q21
250
R26
R21
4K
R22
1.5K
R10
20K
D10
1K
R13
1K
R14
STROBE A
R15
4K
R16
1.5K
R17
55
Q17
Q18
R18
Q15
55
R23
Q23
Q24
R24
4K
Q22
Q25
R25
500
Q26
OUTPUT B
250
R19
Q26
Q19
R20
500
Q20
4K
OUTPUT A
D4
INPUT A
Q1
Q2
INPUT B
D5
GND
SL00273
Figure 3.
2001 Aug 03
2
853-0902 26834
Philips Semiconductors
Product data
Voltage comparator
NE529
ABSOLUTE MAXIMUM RATINGS
SYMBOL
V
1
+
V
1
-
V
2
+
V
OUT
V
IN
V
CM
P
D
Positive supply voltage
Negative supply voltage
Gate supply voltage
Output voltage
Differential input voltage
Input common mode voltage
Maximum power dissipation
1
T
amb
= 25
°C
(still-air)
N package
D package
Operating temperature range
Storage temperature range
Lead soldering temperature
(10 sec max)
PARAMETER
RATING
+15
–15
+7
+7
±5
±6
1420
1040
0 to +70
–65 to +150
+230
UNIT
V
V
V
V
V
V
mW
mW
°C
°C
°C
T
amb
T
stg
T
sld
NOTES:
1. Derate above 25
°C
at the following rates:
N package at 11.5 mW/°C
D package at 8.3 mW/°C
2001 Aug 03
3
Philips Semiconductors
Product data
Voltage comparator
NE529
DC ELECTRICAL CHARACTERISTICS
V
1
+ = +10 V; V
2
+ = +5.0 V; V
1
– = –10 V; unless otherwise specified.
SYMBOL
PARAMETER
TEST CONDITIONS
LIMITS
Min
Typ
Max
UNIT
Input characteristics
V
OS
I
BIAS
S
I
OS
V
CM
Input offset voltage @ 25
°C
Over temperature range
Input bias current @ 25
°C
Over temperature range
Input offset current @ 25
°C
Over temperature range
Common-mode voltage range
V
IN
= 0 V
–5
0
V
IN
= 0 V
2
5
6
10
20
50
5
15
mV
mV
µA
µA
µA
µA
V
Gate characteristics
V
OUT
Output voltage
“1” state
“0” state
Strobe inputs
“0” Input current
1
“1” Input current @ 25
°C
1
Over temperature range
“0” input voltage
“1” input voltage
I
SC
Short-circuit output current
V
2
+ = 4.75 V; I
SOURCE
= –1 mA
V
2
+ = 4.75 V; I
SINK
= 10 mA
V
2
+ = 5.25 V; V
STROBE
= 0.5 V
V
2
+ = 5.25 V; V
STROBE
= 2.7 V
V
2
+ = 5.25 V; V
STROBE
= 2.7 V
V
2
+ = 4.75 V
V
2
+ = 4.75 V
V
2
+ = 5.25 V; V
OUT
= 0 V
2.7
3.3
0.5
–2
100
200
0.8
2.0
–18
–70
V
V
mA
µA
µA
V
V
mA
Power supply requirements
Supply voltage
V
1
+
V
1
–
V
2
+
Supply current
I
1
+
I
1
–
I
2
+
NOTE:
1. See logic function table.
V
1
+ = 10 V; V
1
– = –10 V
V
2
+ = 5.25 V
Over temp.
Over temp.
Over temp.
5
–6
4.75
10
–10
5.25
V
V
V
5
5
10
20
mA
mA
mA
AC ELECTRICAL CHARACTERISTICS
T
amb
= 25
°C
(See AC test circuit).
SYMBOL
t
R
t
PLH
t
PHL
PARAMETER
Transient response
Propagation delay time
Low-to-high
High-to-low
Delay between output A and B
t
ON
t
OFF
Strobe delay time
turn-on time
turn-off time
TEST CONDITIONS
V
IN
=
±100
mV step
12
10
2
6
6
22
20
5
ns
ns
ns
ns
ns
LIMITS
Min
Typ
Max
UNIT
2001 Aug 03
4
Philips Semiconductors
Product data
Voltage comparator
NE529
TYPICAL PERFORMANCE CHARACTERISTICS
Input Currents vs Temperature
3.0
INOUR CURRENT — A
µ
2.5
SUPPLY CURRENT — mA
2.0
1.5
1.0
0
BIAS CURRENT
15
14
13
7
6
5
4
3
2
–50 –25
0
I
2 +
V
2 +
= 5.0V
I
1 –
V
1 –
= 10V
I
1 +
V
1 +
= 10V
POWER DISSIPATION — mW
Supply Currents vs Temperature
160
150
140
130
120
110
100
5
Power Dissipation
vs Supply Voltage
V
2 +
=
5.0V
TA = 25
o
C
0.3
0.2
0.1
0
–50
–25
0
25
50
75 100 125
TEMPERATURE —
o
C
OFFSET CURRENT
25
50
75
100
6
7
8
9
10
TEMPERATURE —
o
C
SUPPLY VOLTAGE (V
1 +
, V
1 –
) — VOLTS
Supply Current
vs Supply Voltage
8
OUTPUT
VOLTAGE — V
Output Propagation Delays
5
4
3
2
1
INPUT
VOLTAGE — mV
0
+100
0
–100
0
5
10
15
OVERDRIVE
20
25
30
INPUT A
OUTPUT B
INPUT
VOLTAGE — mV
OUTPUT A
OUTPUT
VOLTAGE — V
V
1 +
= 10V, V
1 –
= — 10V
V
2 +
= 5.0V
5
4
3
2
1
0
+100
0
–100
Response Time for
Various Input Overdrives
V
1 +
= 10V, V
1 –
= — 10V
V
2 +
= 5.0V
OVERDRIVE
+
5mV
+
10mV
7
SUPPLY CURRENT — mA
6
5
4
3
2
1
0
5
T
1 –
TA = 25
o
C
V
2 +
= 5.0V
OUTPUT A
+
50mV
+
25mV
+
15mV
T
2 +
T
1 +
OVERDRIVE
INPUT B
8
9
10
+
, V
–
) — VOLTS
SUPPLY VOLTAGE (V
1
1
6
7
0
5
10
15
20
25
30
TIME — ns
TIME — ns
SL00270
Figure 4. Typical Performance Characteristics
RESPONSE TIME TEST CIRCUIT
(V1 +)
+10
10µF
INPUT PROBE
500Ω
+
0.1
1
1K
13
0.1
14
11
CR1
9
C
L
R3
6
NOTES:
CR1 — CR4 = IN914
R1 selected for 15.1 divider
R2, 3 selected for 100mV at Pin 4
Input
PRR = 1MHz
P
w
= 50ns
T
r
= T
f
= 2ns
Amplitude = 3.00V
8
1K
(V1 –)
–10
0.1
Output
R
L
= 390Ω
C
L
= 25pF (including
stray capacitance
10
CR3
CR4
CR2
+
(V2 +)
+5
10µF
OUTPUT
PROBE
+5
5K
R1
INPUT
R2
51Ω
51Ω
+5
3
4
R
L
+5
SL00271
Figure 5. Response Time Test Circuit
2001 Aug 03
5
模拟与混合信号
