SILICON POWER MOS FET
NE5511279A
7.5 V OPERATION SILICON RF POWER LD-MOS FET
FOR UHF-BAND 10 W TRANSMISSION AMPLIFIERS
DESCRIPTION
The NE5511279A is an N-channel silicon power laterally diffused MOS FET specially designed as the
transmission power amplifier for 7.5 V Radio Systems. Dies are manufactured using our NEWMOS1 technology
efficiency at 900 MHz under the 7.5 V supply voltage.
and housed in a surface mount package. This device can deliver 40.0 dBm output power with 48% power added
FEATURES
• High output power
• High power added efficiency
• High linear gain
• Surface mount package
• Single supply
APPLICATIONS
• 460 MHz Radio Systems
• 900 MHz Radio Systems
ORDERING INFORMATION
Part Number
NE5511279A-T1
CO
Package
79A
NE5511279A-T1A
DI
S
Remark
To order evaluation samples, contact your nearby sales office.
Part number for sample order: NE5511279A-A
Caution
:
Observe precautions when handling because these devices are sensitive to electrostatic discharge
Document No. PU10322EJ01V0DS (1st edition)
Date Published June 2003 CP(K)
NT
IN
U
: 5.7
5.7
1.1 mm MAX.
: V
DS
= 2.8 to 8.0 V
Marking
W3
Supplying Form
• 12 mm wide embossed taping
• Qty 1 kpcs/reel
• 12 mm wide embossed taping
• Qty 5 kpcs/reel
: P
out
= 40.0 dBm TYP. (f = 900 MHz, V
DS
= 7.5 V, P
in
= 27 dBm, I
Dset
= 400 mA)
: P
out
= 40.5 dBm TYP. (f = 460 MHz, V
DS
= 7.5 V, P
in
= 25 dBm, I
Dset
= 400 mA)
:
add
= 48% TYP. (f = 900 MHz, V
DS
= 7.5 V, P
in
= 27 dBm, I
Dset
= 400 mA)
:
add
= 50% TYP. (f = 460 MHz, V
DS
= 7.5 V, P
in
= 25 dBm, I
Dset
= 400 mA)
: G
L
= 15.0 dB TYP. (f = 900 MHz, V
DS
= 7.5 , P
in
= 5 dBm V, I
Dset
= 400 mA)
: G
L
= 18.5 dB TYP. (f = 460 MHz, V
DS
= 7.5 V, P
in
= 5 dBm, I
Dset
= 400 mA)
• Gate pin face the perforation side of the tape
• Gate pin face the perforation side of the tape
ED
NE5511279A
ABSOLUTE MAXIMUM RATINGS (T
A
= +25C)
Operation in excess of any one of these parameters may result in permanent damage.
Parameter
Drain to Source Voltage
Gate to Source Voltage
Drain Current
Total Power Dissipation
Channel Temperature
Storage Temperature
Symbol
V
DS
Note
Ratings
20
6.0
3.0
20
125
55
to +125
Unit
V
V
A
V
GS
I
D
P
tot
T
ch
T
stg
W
C
C
Note
V
DS
will be used under 12 V on RF operation.
RECOMMENDED OPERATING CONDITIONS
Parameter
Drain to Source Voltage
Gate to Source Voltage
Drain Current
Input Power
Symbol
V
DS
NT
IN
U
Test Conditions
MIN.
TYP.
7.5
2.0
2.5
27
V
GS
I
D
0
Duty Cycle
50%, T
on
1 s
f = 900 MHz, V
DS
= 7.5 V
P
in
Data Sheet PU10322EJ01V0DS
DI
S
2
CO
ED
MAX.
8.0
3.0
3.0
30
Unit
V
V
A
dBm
NE5511279A
ELECTRICAL CHARACTERISTICS
(T
A
= +25C, unless otherwise specified, using our standard test fixture)
Parameter
Gate to Source Leak Current
Drain to Source Leakage Current
(Zero Gate Voltage Drain Current)
Gate Threshold Voltage
Thermal Resistance
Transconductance
Drain to Source Breakdown Voltage
Output Power
Drain Current
Power Added Efficiency
Linear Gain
Output Power
Drain Current
Power Added Efficiency
Linear Gain
Symbol
I
GSS
I
DSS
V
th
R
th
g
m
BV
DSS
P
out
I
D
V
GS
= 6.0 V
V
DS
= 8.5 V
V
DS
= 4.8 V, I
DS
= 1.5 mA
Channel to Case
V
DS
= 3.5 V, I
DS
= 900 mA
I
DSS
= 15
A
f = 900 MHz, V
DS
= 7.5 V,
P
in
= 27 dBm,
Test Conditions
MIN.
1.0
TYP.
1.5
5
MAX.
100
100
2.0
Unit
nA
nA
V
NT
IN
U
add
I
Dset
= 400 mA (RF OFF)
42
48
G
L
Note
P
out
I
D
f = 460 MHz, V
DS
= 7.5 V,
P
in
= 25 dBm,
add
I
Dset
= 400 mA (RF OFF)
G
L
Note
Note
P
in
= 5 dBm
DC performance is 100% testing. RF performance is testing several samples per wafer.
Wafer rejection criteria for standard devices is 1 reject for several samples.
DI
S
CO
Data Sheet PU10322EJ01V0DS
ED
C/W
S
V
2.3
24
20
38.5
40.0
2.5
dBm
A
%
dB
dBm
A
%
dB
15.0
40.5
2.75
50
18.5
3
NE5511279A
TYPICAL CHARACTERISTICS (T
A
= +25C, V
DS
= 7.5 V, I
Dset
= 400 mA)
Remark
The graphs indicate nominal characteristics.
S-PARAMETERS
DI
S
4
Data Sheet PU10322EJ01V0DS
CO
NT
IN
U
ED
NE5511279A
PACKAGE DIMENSIONS
79A (UNIT: mm)
79A PACKAGE RECOMMENDED P.C.B. LAYOUT (UNIT: mm)
DI
S
CO
NT
IN
U
Data Sheet PU10322EJ01V0DS
ED
5
WindowsCE
