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NE5532D8

DUAL OP-AMP, 5000uV OFFSET-MAX, 10MHz BAND WIDTH, PDSO8, PLASTIC, SOP-8

器件类别:模拟混合信号IC    放大器电路   

厂商名称:Rochester Electronics

厂商官网:https://www.rocelec.com/

器件标准:  

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器件参数
参数名称
属性值
是否无铅
不含铅
厂商名称
Rochester Electronics
零件包装代码
SOIC
包装说明
PLASTIC, SOP-8
针数
8
Reach Compliance Code
unknown
放大器类型
OPERATIONAL AMPLIFIER
最大平均偏置电流 (IIB)
1 µA
标称共模抑制比
100 dB
最大输入失调电压
5000 µV
JESD-30 代码
R-PDSO-G8
JESD-609代码
e0
长度
4.9 mm
湿度敏感等级
NOT SPECIFIED
负供电电压上限
-22 V
标称负供电电压 (Vsup)
-15 V
功能数量
2
端子数量
8
最高工作温度
70 °C
最低工作温度
封装主体材料
PLASTIC/EPOXY
封装代码
SOP
封装形状
RECTANGULAR
封装形式
SMALL OUTLINE
峰值回流温度(摄氏度)
240
认证状态
COMMERCIAL
座面最大高度
1.75 mm
标称压摆率
9 V/us
供电电压上限
22 V
标称供电电压 (Vsup)
15 V
表面贴装
YES
技术
BIPOLAR
温度等级
COMMERCIAL
端子面层
TIN LEAD
端子形式
GULL WING
端子节距
1.27 mm
端子位置
DUAL
处于峰值回流温度下的最长时间
30
标称均一增益带宽
10000 kHz
宽度
3.9 mm
文档预览
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NE5532, SA5532, SE5532,
NE5532A, SE5532A
Internally Compensated
Dual Low Noise
Operational Amplifier
The 5532 is a dual high-performance low noise operational
amplifier. Compared to most of the standard operational amplifiers,
such as the 1458, it shows better noise performance, improved output
drive capability and considerably higher small-signal and power
bandwidths.
This makes the device especially suitable for application in
high-quality and professional audio equipment, instrumentation and
control circuits, and telephone channel amplifiers. The op amp is
internally compensated for gains equal to one. If very low noise is of
prime importance, it is recommended that the 5532A version be used
because it has guaranteed noise voltage specifications.
Features
http://onsemi.com
SOIC−8
D SUFFIX
CASE 751
8
1
8
1
PDIP−8
N SUFFIX
CASE 626
Small-Signal Bandwidth: 10 MHz
Output Drive Capability: 600
W,
10 V
RMS
Input Noise Voltage:
5.0 nV Hz
(Typical)
DC Voltage Gain: 50000
AC Voltage Gain: 2200 at 10 kHz
Power Bandwidth: 140 kHz
Slew Rate: 9.0 V/ms
Large Supply Voltage Range:
"3.0
to
"20
V
Compensated for Unity Gain
Pb−Free Packages are Available
16
1
SOIC−16 WB
D SUFFIX
CASE 751G
PIN CONNECTIONS
N, D8 Packages
OUT
A
−IN
A
+IN
A
V-
1
2
3
4
A
B
8 V+
7 OUT
B
6
−IN
B
5 +IN
B
Top View
D Package*
−IN
A
+IN
A
NC
V−
NC
NC
+IN
B
−IN
B
1
2
3
4
5
6
7
8
16
15
14
13
12
11
10
9
NC
NC
NC
OUT
A
V+
OUT
B
NC
NC
Top View
*SOL and non-standard pinout.
DEVICE MARKING INFORMATION
See general marking information in the device marking
section on page 6 of this data sheet.
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 7 of this data sheet.
©
Semiconductor Components Industries, LLC, 2006
March, 2006
Rev. 1
1
Publication Order Number:
NE5532/D
NE5532, SA5532, SE5532, NE5532A, SE5532A
+
_
Figure 1. Equivalent Schematic (Each Amplifier)
MAXIMUM RATINGS
Rating
Supply Voltage
Input Voltage
Differential Input Voltage (Note 1)
Operating Temperature Range
NE5532/A
SA5532
SE5532/A
Storage Temperature
Junction Temperature
Maximum Power Dissipation, T
amb
= 25°C (Still-Air)
8 D8 Package
8 N Package
16 D Packagee
Thermal Resistance, Junction−to−Ambient
8 D8 Package
8 N Package
16 D Packagee
Lead Soldering Temperature (10 sec max)
Symbol
V
S
V
IN
V
DIFF
T
amb
Value
"22
"V
SUPPLY
"0.5
0 to 70
−40
to +85
−55
to +125
−65
to +150
150
780
1200
1200
182
130
140
230
Unit
V
V
V
°C
T
stg
T
j
P
D
°C
°C
mW
R
qJA
°C/W
T
sld
°C
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the
Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect
device reliability.
1. Diodes protect the inputs against overvoltage. Therefore, unless current-limiting resistors are used, large currents will flow if the differential input
voltage exceeds 0.6 V. Maximum current should be limited to
"10
mA.
http://onsemi.com
2
NE5532, SA5532, SE5532, NE5532A, SE5532A
DC ELECTRICAL CHARACTERISTICS
(T
amb
= 25°C; V
S
=
"15
V, unless otherwise noted.) (Notes 2, 3 and 4)
SE5532/A
Characteristic
Offset Voltage
Symbol
V
OS
DV
OS
/DT
Offset Current
I
OS
DI
OS
/DT
Input Current
I
B
DI
B
/DT
Supply Current
I
CC
Common-Mode Input Range
Common-Mode Rejection Ratio
Power Supply Rejection Ratio
Large-Signal Voltage Gain
V
CM
CMRR
PSRR
A
VOL
Test Conditions
Overtemperature
Overtemperature
Overtemperature
Overtemperature
R
L
w
2.0 kW; V
O
=
"10
V
Overtemperature
R
L
w
600
W;
V
O
=
"10
V
Overtemperature
Output Swing
V
OUT
R
L
w
600
W
Overtemperature
R
L
w
600
W;
V
S
=
"18
V
Overtemperature
R
L
w
2.0 kW
Overtemperature
Input Resistance
Output Short Circuit Current
R
IN
I
SC
Min
"12
80
50
25
40
20
"12
"10
"15
"12
"13
"12
30
10
Typ
0.5
5.0
200
200
5.0
8.0
"13
100
10
100
50
"13
"12
"16
"14
"13.5
"12.5
300
38
Max
2.0
3.0
100
200
400
700
10.5
13
50
60
NE5532/A, SA5532
Min
"12
70
25
15
15
10
"12
"10
"15
"12
"13
"10
30
10
Typ
0.5
5.0
10
200
200
5.0
8.0
"13
100
10
100
50
"13
"12
"16
"14
"13.5
"12.5
300
38
Max
4.0
5.0
150
200
800
1000
16
100
60
kW
mA
V
V
dB
mV/V
V/mV
Unit
mV
mV
mV/°C
nA
nA
pA/°C
nA
nA
nA/°C
mA
2. Diodes protect the inputs against overvoltage. Therefore, unless current-limiting resistors are used, large currents will flow if the differential input
voltage exceeds 0.6 V. Maximum current should be limited to
"10
mA.
3. For operation at elevated temperature, derate packages based on the package thermal resistance.
4. Output may be shorted to ground at V
S
=
"15
V, T
amb
= 25°C. Temperature and/or supply voltages must be limited to ensure dissipation rating
is not exceeded.
http://onsemi.com
3
NE5532, SA5532, SE5532, NE5532A, SE5532A
AC ELECTRICAL CHARACTERISTICS
(
T
amb
= 25°C; V
S
=
"15
V, unless otherwise noted.)
NE/SE5532/A, SA5532
Characteristic
Output Resistance
Overshoot
Symbol
R
OUT
Test Conditions
A
V
= 30 dB Closed-loop
f = 10 kHz, R
L
= 600
W
Voltage-Follower
V
IN
= 100 mV
P-P
C
L
= 100 pF; R
L
= 600
W
Gain
Gain Bandwidth Product
Slew Rate
Power Bandwidth
A
V
GBW
SR
f = 10 kHz
C
L
= 100 pF; R
L
= 600
W
V
OUT
=
"10
V
V
OUT
=
"14
V;
R
L
= 600
W
V
CC
=
"18
V
2.2
10
9.0
140
100
V/mV
MHz
V/ms
kHz
10
Min
Typ
0.3
Max
Unit
W
%
ELECTRICAL CHARACTERISTICS
(
T
amb
= 25°C; V
S
=
"15
V, unless otherwise noted.)
NE/SE5532
Characteristic
Input Noise Voltage
Symbol
V
NOISE
I
NOISE
Test Conditions
f
O
= 30 Hz
f
O
= 1.0 kHz
Input Noise Current
f
O
= 30 Hz
f
O
= 1.0 kHz
Channel Separation
f = 1.0 kHz; R
S
= 5.0 kW
Min
Typ
8.0
5.0
2.7
0.7
110
Max
NE/SA/SE5532A
Min
Typ
8.0
5.0
2.7
0.7
110
Max
12
6.0
dB
pA/√Hz
Unit
nV/√Hz
http://onsemi.com
4
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