DATA SHEET
LDMOS FIELD EFFECT TRANSISTOR
NE55410GR
The NE55410GR is an N-channel enhancement-mode LDMOS FET designed for driver 0.1 to 2.6 GHz PA, such
as, cellular base station amplifier, analog/digital TV-transmitters, and the other PA’s. This product has two different
FET's on one die manufactured using our NEWMOS technology (our WSi gate lateral MOS FET), and its nitride
surface passivation and quadruple layer aluminum silicon metalization offer a high degree of reliability.
FEATURES
• Over 25 dB gain available by connecting two FET’s in series
: G
L (Q1)
= 13.5 dB TYP. (V
DS
= 28 V, I
Dset (Q1)
= 20 mA, f = 2 140 MHz)
: G
L (Q2)
= 11.0 dB TYP. (V
DS
= 28 V, I
Dset (Q2)
= 100 mA, f = 2 140 MHz)
• High 1 dB compression output power : P
O (1 dB) (Q1)
= 35.4 dBm TYP. (V
DS
= 28 V, I
Dset (Q1)
= 20 mA, f = 2 140 MHz)
• High drain efficiency
• Low intermodulation distortion
<R>
• Single Supply (V
DS
: 3 V
<
V
DS
≤
32 V)
• Excellent Thermal Stability
• Integrated ESD protection
• Surface mount type and Super low cost plastic package : 16-pin plastic HTSSOP
• Excellent stability against HCI (Hot Carrier Injection)
<R>
DI
Document No. PU10542EJ03V0DS (3rd edition)
Date Published January 2007 NS CP(N)
SC
• UHF-band TV transmitter PA
APPLICATION
• Digital cellular base station PA : W-CDMA/GSM/D-AMPS/N-CDMA/PCS etc.
Caution Observe precautions when handling because these devices are sensitive to electrostatic discharge.
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
The revised points can be easily searched by copying an "<R>" in the PDF file and specifying it in the "Find what:" field.
O
NT
: P
O (1 dB) (Q2)
= 40.4 dBm TYP. (V
DS
= 28 V, I
Dset (Q2)
= 100 mA, f = 2 140 MHz)
:
η
d (Q1)
= 52% TYP. (V
DS
= 28 V, I
Dset (Q1)
= 20 mA, f = 2 140 MHz)
: IM
3 (Q1)
=
−40
dBc TYP. (V
DS
= 28 V, I
Dset (Q1+Q2)
= 120 mA,
f = 2 132.5/2 147.5 MHz, P
out
= 33 dBm (2 tones) )
:
η
d (Q2)
= 46% TYP. (V
DS
= 28 V, I
Dset (Q2)
= 100 mA, f = 2 140 MHz)
The mark <R> shows major revised points.
IN
• Two different FET’s (Q1 : P
out
= 2 W, Q2 : P
out
= 10 W) in one package
UE
DESCRIPTION
D
N-CHANNEL SILICON POWER LDMOS FET
FOR 2 W + 10 W VHF to L-BAND SINGLE-END POWER AMPLIFIER
NE55410GR
ORDERING INFORMATION
Part Number
NE55410GR
Order Number
NE55410GR-T3-AZ
Package
16-pin plastic HTSSOP
(Pb-Free)
Note
Marking
55410
Supplying Form
•
Embossed tape 12 mm wide
•
Pin 1 and 8 indicates pull-out direction of tape
•
Qty 1 kpcs/reel
Note
With regards to terminal solder (the solder contains lead) plated products (conventionally plated), contact
your nearby sales office.
Remark
To order evaluation samples, contact your nearby sales office.
Part number for sample order: NE55410GR
PIN CONNECTIONS AND INTERNAL BLOCK DIAGRAM
(Top View)
S
9
10
11
12
13
14
15
16
S
S
Q2
S
S
S
S
Q1
S
8
7
6
5
4
3
2
1
Pin No.
1
2
3
4
5
6
7
8
IN
Drain (Q2)
Drain (Q2)
Drain (Q2)
Drain (Q2)
Source
Gate (Q1)
Source
Test Conditions
f = 2.14 GHz, V
DS
= 28 V
f = 2.14 GHz, V
DS
= 28 V
Data Sheet PU10542EJ03V0DS
NT
S
Symbol
V
DS
V
GS
I
D (Q1)
I
D (Q2)
P
tot
P
in (Q1)
P
in (Q2)
T
ch
T
stg
S
S
Remark
All the terminals of a Q2 connected to a
circuit. Backside : Source (S)
Parameter
Drain to Source Voltage
Gate to Source Voltage
Drain Current (Q1)
Drain Current (Q2)
O
ABSOLUTE MAXIMUM RATINGS (T
A
= +25°C, unless otherwise specified)
Ratings
65
±7
0.25
1.0
40
0.3
1.5
150
−65
to +150
Unit
V
V
A
A
W
W
W
°C
°C
DI
SC
Total Device Dissipation (T
case
= 25°C)
Input Power (Q1)
Input Power (Q2)
Channel Temperature
Storage Temperature
2
UE
Pin Name
Source
Pin No.
9
10
11
12
13
14
15
16
D
Pin Name
Source
Gate (Q1)
Source
Drain (Q1)
Source
Gate (Q2)
Gate (Q2)
Source
NE55410GR
THERMAL RESISTANCE (T
A
= +25°C)
Parameter
Channel to Case Resistance
Symbol
R
th (ch-c)
Test Conditions
MIN.
−
TYP.
2.5
MAX.
3.0
Unit
°C/W
RECOMMENDED OPERATING CONDITIONS (T
A
= +25°C)
Parameter
Symbol
V
DS
V
GS
P
in (Q1)
P
in (Q2)
Note
MIN.
−
2.7
−
−
−
−
TYP.
28
3.3
15
20
−
−
MAX.
32
3.7
23
30
Unit
V
V
<R>
Drain to Source Voltage
Gate to Source Voltage
Input Power (Q1), CW
Input Power (Q2), CW
<R>
<R>
<R>
Average Output Power (Q1), CW
Average Output Power (Q2), CW
P
O (ave.) (Q1)
P
O (ave.) (Q2)
24
30
Note
Note
When mounting on the PWB that our company recommends.
ELECTRICAL CHARACTERISTICS (T
A
= +25°C)
Parameter
Q1
Gate to Source Leak Current
Drain to Source Leakage Current
Gate Threshold Voltage
Transconductance
Drain to Source Breakdown Voltage
Q2
I
GSS (Q1)
I
DSS (Q1)
V
th (Q1)
g
m (Q1)
Symbol
IN
Test Conditions
MIN.
−
−
2.2
−
65
−
−
2.0
−
65
UE
dBm
dBm
dBm
dBm
TYP.
MAX.
Unit
−
−
2.8
0.09
75
1
1
3.4
−
−
NT
V
GSS
= 5V
V
DSS
= 65 V
V
DS
= 10 V, I
DS
= 1 mA
V
DS
= 28 V, I
DS
= 20 mA
BV
DSS (Q1)
I
DSS
= 10
μ
A
I
GSS (Q2)
I
DSS (Q2)
V
th (Q2)
g
m (Q2)
V
GSS
= 5V
V
DSS
= 65 V
V
DS
= 10 V, I
DS
= 1 mA
V
DS
= 28 V, I
DS
= 100 mA
BV
DSS (Q2)
I
DSS
= 10
μ
A
Data Sheet PU10542EJ03V0DS
O
Gate to Source Leak Current
Drain to Source Leakage Current
Gate Threshold Voltage
Transconductance
SC
Drain to Source Breakdown Voltage
DI
D
μ
A
mA
V
S
V
−
−
2.6
0.45
75
1
1
3.2
−
−
μ
A
mA
V
S
V
3
NE55410GR
<R>
RF CHARACTERISTICS (T
A
= +25°C)
Parameter
Q1
Gain 1 dB Compression Output Power
Drain Efficiency
Linear Gain
Q2
Gain 1 dB Compression Output Power
Drain Efficiency
Linear Gain
Gain 1 dB Compression Output Power
Drain Efficiency
Linear Gain
Q1 + Q2
Gain 1 dB Compression Output Power
Drain Efficiency
Linear Gain
Gain 1 dB Compression Output Power
Drain Efficiency
Output Power
Linear Gain
P
O (1 dB)
P
O (1 dB)
f = 2 140 MHz, V
DS
= 28 V,
I
Dset
= 100 mA
−
P
O (1 dB)
f = 2 140 MHz, V
DS
= 28 V,
I
Dset
= 20 mA
−
−
12
35.4
52
−
−
dBm
%
Symbol
Test Conditions
MIN.
TYP.
MAX.
Unit
G
L
Note1
η
d
G
L
Note2
UE
−
46
−
9.5
−
11
−
40.5
49
−
−
−
−
14
−
−
41.5
55
30
40.0
42
40
25
−40
21
−
−
−
−
−
−
−
−
−
−
−
−
34
39
24
−
−
P
O (1 dB)
f = 1 840 MHz, V
DS
= 28 V,
I
Dset
= 100 mA
η
d
G
L
Note2
f = 880 MHz, V
DS
= 28 V,
I
Dset
= 120 mA (Q1 + Q2)
IN
η
d
G
L
Note3
NT
η
d
I
Dset
= 120 mA (Q1 + Q2)
P
out
G
L
Note4
P
O (1 dB)
f = 2 140 MHz, V
DS
= 28 V,
3rd Order Intermodulation Distortion
Drain Efficiency
IM
3
f = 2 132.5/2 147.5 MHz, V
DS
= 28 V,
η
d
2 carrier W-CDMA 3GPP, Test Model1,
64DPCH, 67% Clipping,
I
Dset
= 120 mA (Q1 + Q2),
Notes 1.
P
in
= 15 dBm
2.
P
in
= 20 dBm
3.
P
in
= 5 dBm
4.
P
in
= 10 dBm
DI
SC
4
O
Ave P
out
= 33 dBm
Data Sheet PU10542EJ03V0DS
D
13.5
−
dB
40.4
−
dBm
%
dB
dBm
%
dB
dBm
%
dB
dBm
%
dB
dB
dBc
%
η
d
NE55410GR
TYPICAL CHARACTERISTICS (T
A
= +25°C, V
DS
= 28 V, I
Dset
= 120 mA, unless otherwise specified)
3rd/5th Order Intermodulation Distortion IM
3
/IM
5
(dBc)
GAIN, DRAIN EFFICIENCY,
vs. OUTPUT POWER
f = 840 MHz
860 MHz
34
880 MHz
900 MHz
920 MHz
32
Gain G (dB)
IM
3
/IM
5
vs. 2 TONES OUTPUT POWER
–10
Lower
Upper
36
80
70
Drain Efficiency
η
d
(%)
–20
–30
–40
–50
–60
60
G
50
40
30
28
26
24
22
20
20
25
30
35
40
30
20
10
0
45
UE
IM
5
–70
15
20
25
30
35
40
2 tones Output Power P
out
(dBm)
η
d
Output Power P
out
(dBm)
30
28
26
Gain G (dB)
60
50
40
30
20
10
24
22
20
18
16
14
20
25
30
η
d
Output Power P
out
(dBm)
3rd/5th Order Intermodulation Distortion IM
3
/IM
5
(dBc)
SC
IM
3
/IM
5
, DRAIN EFFICIENCY,
vs. 2 TONES OUTPUT POWER
–20
O
–25
Lower
Upper
–35
IM
3
70
60
50
40
–40
IM
5
–45
DI
–50
–55
–60
η
d
30
20
10
0
45
–65
–70
15
20
25
30
35
40
2 tones Output Power P
out
(dBm)
Remark
The graphs indicate nominal characteristics.
Data Sheet PU10542EJ03V0DS
Drain Efficiency
η
d
(%)
–30
NT
f = 2.09 GHz
2.11 GHz
2.14 GHz
2.17 GHz
2.19 GHz
35
40
0
45
100
90
80
W-CDMA 3GPP, Test Model 1,
64 DPCH, 67% Clipping,
Center Frequency 2.14GHz,
15 MHz spacing
G
Drain Efficiency
η
d
(%)
IN
80
70
GAIN, DRAIN EFFICIENCY,
vs. OUTPUT POWER
D
IM
3
CW, f = 960 MHz,
1 MHz Spacing
45
5
