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NE72218-T2

C to X BAND AMPLIFIER C to X BAND OSC N-CHANNEL GaAs MES FET

厂商名称:NEC ( Renesas )

厂商官网:https://www2.renesas.cn/zh-cn/

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DATA SHEET
GaAs MES FET
NE72218
C to X BAND AMPLIFIER
C to X BAND OSC
N-CHANNEL GaAs MES FET
FEATURES
• High power gain in C to X band: G
S
= 4.5 dB TYP. @ f = 12 GHz
• Gate length
• Gate width
• 4-pin super minimold package
• Tape & reel packaging only available
: L
g
= 0.8
µ
m
: W
g
= 400
µ
m
ORDERING INFORMATION
Part Number
NE72218-T1
Package
4-pin super minimold
Supplying Form
8 mm wide embossed taping
Pin 3 (Source), Pin 4 (Drain) face the perforation side of the tape
Qty 3 kpcs/reel
8 mm wide embossed taping
Pin 1 (Source), Pin 2 (Gate) face the perforation side of the tape
Qty 3 kpcs/reel
NE72218-T2
Remark
To order evaluation samples, consult your NEC sales representative (Part number for sample order:
NE72218).
ABSOLUTE MAXIMUM RATINGS (T
A
= +25
°
C)
Parameter
Drain to Source Voltage
Gate to Source Voltage
Drain Current
Total Power Dissipation
Channel Temperature
Storage Temperature
Symbol
V
DS
V
GS
I
D
P
tot
T
ch
T
stg
Ratings
5.0
−5.0
I
DSS
250
125
−65
to +125
Unit
V
V
mA
mW
°C
°C
Because this product uses high-frequency technology, avoid excessive static electricity, etc.
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for
availability and additional information.
Document No. P12750EJ3V0DS00 (3rd edition)
Date Published August 2000 NS CP(K)
Printed in Japan
The mark
shows major revised points.
©
1997, 2000
NE72218
ELECTRICAL CHARACTERISTICS (T
A
= +25
°
C)
Parameter
Gate to Source Leak Current
Saturated Drain Current
Gate to Source Cutoff Voltage
Transconductance
Phase Noise
Symbol
I
GSO
I
DSS
V
GS (off)
g
m
PN
V
GS
=
−5
V
V
DS
= 3 V, V
GS
= 0 V
V
DS
= 3 V, I
D
= 100
µ
A
V
DS
= 3 V, I
D
= 30 mA
V
DS
= 3 V, I
D
= 30 mA, f = 11 GHz,
100 kHz offset
V
DS
= 3 V, I
D
= 30 mA, f = 11 GHz,
10 kHz offset
Power Gain
Output Power at 1 dB Gain
Compression Point
G
S
P
O (1 dB)
V
DS
= 3 V, I
D
= 30 mA, f = 12 GHz
V
DS
= 3 V, I
D
= 30 mA, f = 12 GHz
Test Conditions
MIN.
30
−0.5
20
TYP.
1.0
60
−2.0
45
−110
−90
4.5
15.0
MAX.
10
120
−4.0
Unit
µ
A
mA
V
mS
dBc/Hz
dBc/Hz
dB
dBm
I
DSS
CLASSIFICATION
Rank
57
58
59
I
DSS
(mA)
30 to 120
65 to 120
30 to 75
Marking
V57
V58
V59
2
Data Sheet P12750EJ3V0DS00
NE72218
TYPICAL CHARACTERISTICS (Unless otherwise specified, T
A
= +25
°
C)
TOTAL POWER DISSIPATION vs.
AMBIENT TEMPERATURE
500
100
DRAIN CURRENT vs.
DRAIN TO SOURCE VOLTAGE
Total Power Dissipation P
tot
(mW)
Drain Current I
D
(mA)
400
80
V
GS
= 0 V
300
60
200
40
–0.5 V
100
20
–1.0 V
0
50
100
150
200
250
0
1
2
3
4
5
Ambient Temperature T
A
(˚C)
Drain to Sourcr Voltage V
DS
(V)
DRAIN CURRENT vs.
GATE TO SOURCE VOLTAGE
V
DS
= 3 V
80
Drain Current I
D
(mA)
60
40
20
0
–4.0
–2.0
Gate to Source Voltage V
GS
(V)
0
Remark
The graphs indicate nominal characteristics.
Data Sheet P12750EJ3V0DS00
3
NE72218
S-PARAMETERS
MAG. AND ANG.
V
DS
= 3 V, I
D
= 10 mA
Frequency
MHz
2000
2500
3000
3500
4000
4500
5000
5500
6000
6500
7000
7500
8000
8500
9000
9500
10000
10500
11000
11500
12000
12500
13000
13500
14000
14500
15000
15500
16000
16500
17000
17500
18000
MAG.
0.896
0.849
0.801
0.741
0.687
0.630
0.578
0.534
0.498
0.466
0.437
0.411
0.395
0.395
0.408
0.435
0.477
0.525
0.572
0.621
0.656
0.694
0.720
0.744
0.772
0.803
0.819
0.837
0.843
0.848
0.844
0.847
0.854
S
11
ANG.
−41.7
−51.7
−62.1
−72.5
−83.1
−93.3
−103.7
−114.6
−126.0
−138.0
−151.0
−164.5
−177.9
167.8
152.7
138.7
125.5
113.8
103.8
95.4
88.0
80.8
73.7
66.6
59.8
52.6
47.0
42.5
39.1
36.8
35.4
33.2
30.9
MAG.
2.732
2.662
2.623
2.556
2.484
2.413
2.337
2.261
2.186
2.120
2.050
1.984
1.923
1.877
1.822
1.763
1.700
1.625
1.538
1.450
1.354
1.263
1.165
1.070
0.969
0.869
0.776
0.696
0.623
0.557
0.495
0.444
0.399
S
21
ANG.
135.1
124.7
114.4
104.6
95.1
86.0
76.9
68.2
59.7
51.5
43.3
35.1
27.3
19.2
10.8
2.1
−6.6
−15.2
−24.0
−32.9
−41.2
−49.5
−58.1
−66.2
−74.2
−82.2
−88.5
−94.5
−99.9
−104.9
−109.7
−113.8
−117.7
MAG.
0.067
0.079
0.091
0.098
0.105
0.109
0.114
0.115
0.117
0.122
0.125
0.130
0.135
0.148
0.160
0.175
0.190
0.203
0.216
0.228
0.237
0.244
0.248
0.248
0.247
0.243
0.235
0.227
0.222
0.217
0.211
0.205
0.195
S
12
ANG.
62.7
58.1
52.2
47.3
43.8
39.9
37.7
35.3
35.0
34.2
33.5
32.8
34.4
33.4
31.6
29.8
26.4
22.3
17.9
12.5
6.5
0.2
−5.9
−12.0
−18.2
−24.5
−29.5
−34.5
−39.0
−43.0
−47.9
−51.7
−55.5
MAG.
0.709
0.683
0.657
0.625
0.594
0.570
0.549
0.530
0.512
0.499
0.476
0.450
0.423
0.402
0.381
0.377
0.389
0.410
0.436
0.457
0.472
0.484
0.504
0.543
0.586
0.645
0.691
0.734
0.767
0.784
0.797
0.802
0.804
S
22
ANG.
−27.8
−34.1
−40.7
−46.9
−53.1
−59.3
−65.7
−71.7
−77.3
−81.8
−86.6
−91.7
−97.5
−106.7
−118.5
−131.9
−146.7
−160.7
−174.4
172.5
160.0
146.1
131.8
118.3
106.3
97.0
89.8
84.4
78.9
73.2
66.3
58.7
52.2
4
Data Sheet P12750EJ3V0DS00
NE72218
AMPLIFER PARAMETERS
V
DS
= 3 V, I
D
= 10 mA
S
21
2
dB
8.73
8.50
8.38
8.15
7.90
7.65
7.37
7.09
6.79
6.53
6.23
5.95
5.68
5.47
5.21
4.93
4.61
4.22
3.74
3.23
2.63
2.03
1.33
0.59
−0.28
−1.22
−2.21
−3.15
−4.11
−5.09
−6.12
−7.05
−7.98
S
12
2
dB
−23.44
−22.04
−20.86
−20.17
−19.54
−19.22
−18.90
−18.81
−18.66
−18.30
−18.03
−17.73
−17.42
−16.60
−15.90
−15.16
−14.44
−13.87
−13.31
−12.86
−12.50
−12.27
−12.09
−12.10
−12.14
−12.28
−12.59
−12.88
−13.08
−13.29
−13.51
−13.77
−14.20
0.39
0.48
0.55
0.66
0.75
0.85
0.93
1.03
1.10
1.13
1.20
1.26
1.32
1.26
1.21
1.14
1.04
0.95
0.88
0.81
0.78
0.76
0.77
0.77
0.76
0.72
0.71
0.67
0.65
0.65
0.68
0.75
0.82
Frequency
MHz
2000
2500
3000
3500
4000
4500
5000
5500
6000
6500
7000
7500
8000
8500
9000
9500
10000
10500
11000
11500
12000
12500
13000
13500
14000
14500
15000
15500
16000
16500
17000
17500
18000
GUmax
dB
18.83
16.76
15.28
13.77
12.57
11.55
10.70
9.97
9.35
8.83
8.27
7.74
7.27
6.97
6.68
6.50
6.44
6.41
6.38
6.36
6.17
6.04
5.76
5.60
5.48
5.60
5.44
5.45
5.14
4.58
3.67
2.90
2.21
GAmax
dB
K
Delay
ns
0.058
0.058
0.057
0.055
0.053
0.051
0.050
0.048
0.047
0.045
0.045
0.046
0.043
0.045
0.047
0.049
0.048
0.048
0.049
0.049
0.046
0.046
0.048
0.045
0.044
0.044
0.035
0.033
0.030
0.028
0.026
0.023
0.022
Mason’s U
dB
23.662
23.219
22.068
20.102
19.595
18.153
17.841
16.857
16.530
16.398
15.252
13.995
12.822
12.769
12.379
12.271
12.698
13.096
13.357
13.657
13.187
12.458
10.685
9.478
8.699
8.737
8.174
8.590
8.343
7.597
6.421
4.782
3.605
G1
dB
7.06
5.53
4.45
3.47
2.77
2.19
1.76
1.46
1.24
1.06
0.92
0.80
0.74
0.74
0.79
0.91
1.12
1.40
1.72
2.12
2.44
2.85
3.17
3.50
3.93
4.49
4.82
5.24
5.39
5.52
5.40
5.48
5.67
G2
dB
3.04
2.73
2.45
2.15
1.89
1.71
1.56
1.43
1.32
1.25
1.11
0.98
0.86
0.77
0.68
0.66
0.71
0.80
0.92
1.02
1.10
1.16
1.27
1.52
1.83
2.33
2.82
3.36
3.86
4.15
4.38
4.47
4.52
11.96
10.83
10.19
9.42
8.74
8.19
7.99
7.78
7.81
8.34
Data Sheet P12750EJ3V0DS00
5
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参数对比
与NE72218-T2相近的元器件有:NE72218-T1。描述及对比如下:
型号 NE72218-T2 NE72218-T1
描述 C to X BAND AMPLIFIER C to X BAND OSC N-CHANNEL GaAs MES FET C to X BAND AMPLIFIER C to X BAND OSC N-CHANNEL GaAs MES FET
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