• Pin 2 (Base) face the perforation side of the tape
Remark
To order evaluation samples, contact your nearby sales office.
The unit sample quantity is 50 pcs.
ABSOLUTE MAXIMUM RATINGS
(T
A
=+25ºC)
PARAMETER
Collector to Base Voltage
Collector to Emitter Voltage
Emitter to Base Voltage
Collector Current
Total Power Dissipation
Junction Temperature
Storage Temperature
SYMBOL
V
CBO
V
CEO
V
EBO
I
C
P
tot
Note
RATINGS
9.0
5.5
1.5
100
130
150
−65
to +150
UNIT
V
V
V
mA
mW
°C
°C
T
j
T
stg
Note
Mounted on 1.08 cm
2
×
1.0 mm (t) glass epoxy PCB
Caution
Observe precautions when handling because these devices are sensitive to electrostatic discharge.
California Eastern Laboratories
NE851M33
ELECTRICAL CHARACTERISTICS
(T
A
=+25ºC)
PARAMETER
DC Characteristics
Collector Cut-off Current
Emitter Cut-off Current
DC Current Gain
RF Characteristics
Gain Bandwidth Product (1)
Gain Bandwidth Product (2)
Insertion Power Gain (1)
Insertion Power Gain (2)
Noise Figure
Reverse Transfer Capacitance
f
T
f
T
|S
21e
|
2
|S
21e
|
2
NF
C
re
Note 2
V
CE
= 1 V, I
C
= 5 mA, f = 2 GHz
V
CE
= 1 V, I
C
= 15 mA, f = 2 GHz
V
CE
= 1 V, I
C
= 5 mA, f = 2 GHz
V
CE
= 1 V, I
C
= 15 mA, f = 2 GHz
V
CE
= 1 V, I
C
= 10 mA, f = 2 GHz,
Z
S
= Z
opt
V
CB
= 0.5 V, I
C
= 0 mA, f = 1 MHz
3.0
5.0
3.0
4.5
–
–
4.5
6.5
4.0
5.5
1.9
0.6
–
–
–
–
2.5
0.8
GHz
GHz
dB
dB
dB
pF
I
CBO
I
EBO
h
FE
Note 1
V
CB
= 5 V, I
E
= 0 mA
V
EB
= 1 V, I
C
= 0 mA
V
CE
= 1 V, I
C
= 5 mA
–
–
100
–
–
120
600
600
145
nA
nA
–
SYMBOL
TEST CONDITIONS
MIN.
TYP.
MAX.
UNIT
Notes 1.
Pulse measurement: PW
≤
350
μs,
Duty Cycle
≤
2%
2.
Collector to base capacitance when the emitter grounded
h
FE
CLASSIFICATION
RANK
Marking
h
FE
Value
FB
E7
100 to 145
NE851M33
TYPICAL CHARACTERISTICS
(T
A
=+25ºC, unless otherwise specified)
TOTAL POWER DISSIPATION
vs. AMBIENT TEMPERATURE
Reverse Transfer Capacitance C
re
(pF)
250
Total Power Dissipation P
tot
(mW)
200
150
100
50
Mounted on Glass Epoxy PCB
(1.08 cm
2
×
1.0 mm (t) )
REVERSE TRANSFER CAPACITANCE
vs. COLLECTOR TO BASE VOLTAGE
1.0
0.8
0.6
0.4
0.2
f = 1 MHz
130
0
25
50
75
100
125
150
0
2
4
6
8
10
Ambient Temperature T
A
(ºC)
Collector to Base Voltage V
CB
(V)
COLLECTOR CURRENT vs.
BASE TO EMITTER VOLTAGE
100
Collector Current I
C
(mA)
10
1
0.1
0.01
V
CE
= 1 V
Collector Current I
C
(mA)
100
10
1
0.1
0.01
COLLECTOR CURRENT vs.
BASE TO EMITTER VOLTAGE
V
CE
= 2 V
0.001
0.5
0.6
0.7
0.8
0.9
1.0
0.001
0.5
0.6
0.7
0.8
0.9
1.0
0.0001
0.4
0.0001
0.4
Base to Emitter Voltage V
BE
(V)
Base to Emitter Voltage V
BE
(V)
COLLECTOR CURRENT vs.
COLLECTOR TO EMITTER VOLTAGE
60
Collector Current I
C
(mA)
50
40
30
20
10
0
1
2
3
4
5
400
µ
A
360
µ
A
320
µ
A
280
µ
A
240
µ
A
200
µ
A
160
µ
A
120
µ
A
80
µ
A
I
B
= 40
µ
A
6
7
Collector to Emitter Voltage V
CE
(V)
Remark
The graphs indicate nominal characteristics.
NE851M33
TYPICAL CHARACTERISTICS
(T
A
=+25ºC, unless otherwise specified)
DC CURRENT GAIN vs.
COLLECTOR CURRENT
1,000
V
CE
= 1 V
1,000
DC CURRENT GAIN vs.
COLLECTOR CURRENT
V
CE
= 2 V
DC Current Gain h
FE
DC Current Gain h
FE
100
100
10
0.1
1
10
100
10
0.1
1
10
100
Collector Current I
C
(mA)
Collector Current I
C
(mA)
Remark
The graphs indicate nominal characteristics.
NE851M33
PACKAGE DIMENSIONS
3-PIN SUPER LEAD-LESS MINIMOLD (M33)
(UNIT: mm)
0.64±0.05
0.44±0.05
(Bottom View)
0.285
0.84±0.05
2
0.57
3
0.125
E7
1. Emitter
2. Base
3. Collector
0.125
0.15
0.15
0.4
0.11
NE package code: M33
SOT number: –
PIN CONNECTIONS
Life Support Applications
These NEC products are not intended for use in life support devices, appliances, or systems where the malfunction of these products can reasonably
be expected to result in personal injury. The customers of CEL using or selling these products for use in such applications do so at their own risk and
agree to fully indemnify CEL for all damages resulting from such improper use or sale.
0.15
1
06/07/2004
A Business Partner of NEC Compound Semiconductor Devices, Ltd.
stm32/stm8
