V-Chip Memory Back-Up Capacitors
FEATURES
• DOUBLE LAYER CONSTRUCTION
• POWER BACK-UP FOR CMOS DEVICES
• SURFACE MOUNTABLE V-CHIP STYLE
• LEAD-FREE FINISH
CHARACTERISTICS
Rated Voltage Range
Rated Capacitance Range
Operating Temp. Range
Capacitance Tolerance
Load Life Test
+70°C 1,000 hours
Temperature Cycling
(5 cycles, -25 ~ +70°C
3.5 & 5.5VDC
0.047F ~ 1.0F (47,000μF ~ 1,000,000μF)
-25°C ~ +70°C
+80%/-20% (Z)
Δ
Capacitance Change
Maximum ESR
Current at 30 minutes
Δ
Capacitance Change
Maximum ESR
Current at 30 minutes
Δ
Capacitance Change
Maximum ESR
Current at 30 minutes
*For high temperature +85°C,
high temperature reflow parts
see the NEXCW series
NEXC Series
Humidity Resistance
(240 hours @ 40°C/90% RH)
Less than ±30% of initial measured value
Less than 200% of the specified maximum value
Less than 200% of the specified maximum value
Within +80%/-20% of specified value
Less than specified maximum value
Less than specified maximum value
Less than ±20% of initial measured value
Less than 120% of the specified maximum value
Less than 120% of the specified maximum value
STANDARD VALUES AND SPECIFICATIONS
NIC P/N
NEXC104Z3.5V10.5X5.5TRF
NEXC224Z3.5V10.5X5.5TRF
NEXC474Z3.5V10.5X8.5TRF
NEXC473Z5.5V10.5X5.5TRF
NEXC104Z5.5V10.5X5.5TRF
NEXC224Z5.5V10.5X8.5TRF
NEXC474Z5.5V16X9.5TRF
NEXC105Z5.5V21X10.5TRF
Capacitance
Value (F)
Discharge
0.1
0.22
0.47
0.047
0.1
0.22
0.47
1.0
Working
Voltage
(VDC)
3.5
3.5
3.5
5.5
5.5
5,5
5.5
5.5
Holding
Voltage
(VDC min.)
-
-
-
4.2
4.2
4.2
4.2
4.2
Max. Current
@ 30 minutes
(mA)
0.090
0.200
0.420
0.071
0.150
0.330
0.710
1.500
Max. ESR
@ 1KHz
(Ω)
50
25
25
50
25
25
13
7
CASE DIMENSIONS (mm)
Case Size
10.5 x 5.5
10.5 x 8.5
16 x 9.5
21 x 10.5
Dφ ± 0.5
10.5
10.5
16.0
21.0
L max.
5.5
8.5
9.5
10.5
A/B ±0.2
10.8
10.8
16.3
21.6
I
3.6 ±0.5
3.6 ±0.5
6.8 ±1.0
7.0 ±1.0
W
1.2
1.2
1.2
1.4
P
5.0
5.0
5.0
10.0
+
Dφ
0.3mm max.
I
I
I
-
A
w
L
P
B
WASHING is NOT RECOMMENDED. Additional precautions can be found at
www.niccomp.com/precautions
If in doubt or uncertainty, please review your specific application - process details
with NIC’s technical support personnel:
tpmg@niccomp.com
PRECAUTIONS
NIC COMPONENTS CORP.
www.niccomp.com
www.lowESR.com
www.RFpassives.com
www.SMTmagnetics.com
SPECIFICATIONS ARE SUBJECT TO CHANGE
1
V-Chip Memory Back-Up Capacitors
LAND PATTERN DIMENSIONS (mm)
Case
Diameter
10.5
16.0
21.0
R
5.0
5.0
10.0
S
4.6
10.0
10.5
T
2.5
2.5
3.5
T
COMPONENT OUTLINE
NEXC Series
S
R
S
STANDARD RECOMMENDED REFLOW PROFILE
Temperature - Deg. C
250
200
150
100
50
25
Pre-heat
160°C 120 sec. max.
Time above 200°C
30 sec. max.
Cool Down
Peak Temperature
(235°C for 10 sec.)
0
Time
1. The temperatures shown are the surface temperature values on the top of the can and on the capacitor terminals.
2. 2x reflow process maximum. Capacitor should be allowed to return to room temperature before second reflow process.
2
NIC COMPONENTS CORP.
www.niccomp.com
www.lowESR.com
www.RFpassives.com
www.SMTmagnetics.com
SPECIFICATIONS ARE SUBJECT TO CHANGE
V-Chip Memory Back-Up Capacitors
CARRIER TAPE DIMENSIONS (mm)
Case Size
10.5 x 5.5
10.5 x 8.5
16 x 9.5
21 x 10.5
A
11.4
11.4
18.0
23.0
B
13.0
13.0
20.0
25.0
D
1.55
1.55
1.55
1.55
E
1.75
1.75
1.75
1.75
F
11.5
11.5
14.2
20.2
G
-
-
28.4
40.4
P
4.0
4.0
4.0
4.0
P
1
16.0
16.0
24.0
32.0
T
1
0.4
0.4
0.5
0.5
T
2
6.0
8.4
10.0
12.0
W
24.0
24.0
32.0
44.0
NEXC Series
Quantity/Reel
1,000
500
200
150
P
1.5∅ +0.1/-
D
-
1.75
±
E
F
T
1
W
B
+
A
P
1
Feeding
T
2
REEL DIMENSIONS (mm)
Case Size
10.5 x 5.5
10.5 x 8.5
16 x 9.5
21 x 10.5
A ± 2.0
380
380
330
370
B ± 1.0
80.0
100.0
100.0
100.0
C ± 0.5
13.0
13.0
13.0
13.0
D ± 0.8
21.0
21.0
21.0
21.0
E ± 0.5
2.0
2.0
2.0
2.0
W
25.5
25.5
33.5
45.5
t
3.0
2.8
2.8
2.8
t
C
E
A
B
W
NIC COMPONENTS CORP.
www.niccomp.com
www.lowESR.com
www.RFpassives.com
www.SMTmagnetics.com
SPECIFICATIONS ARE SUBJECT TO CHANGE
3
