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NGTD14T65F2SWK

IGBT TRENCH FIELD STOP 650V DIE

器件类别:半导体    分立半导体   

厂商名称:ON Semiconductor(安森美)

厂商官网:http://www.onsemi.cn

器件标准:

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器件参数
参数名称
属性值
IGBT 类型
沟槽型场截止
电压 - 集射极击穿(最大值)
650V
脉冲电流 - 集电极 (Icm)
120A
不同 Vge,Ic 时的 Vce(on)
2V @ 15V,35A
输入类型
标准
工作温度
-55°C ~ 175°C(TJ)
安装类型
表面贴装
封装/外壳
模具
供应商器件封装
模具
文档预览
NGTD14T65F2
IGBT Die
Trench Field Stop II IGBT Die for motor drive and inverter
applications.
Features
Extremely Efficient Trench with Field Stop Technology
Low V
CE(sat)
Loss Reduces System Power Dissipation
Typical Applications
www.onsemi.com
Industrial Motor Drives
Solar Inverters
UPS Systems
Welding
Parameter
Symbol
V
CE
I
C
I
C, pulse
V
GE
T
J
T
SC
Value
650
(Note 1)
120
±20
−55 to +175
10
Unit
V
A
A
V
°C
ms
V
RCE
= 650 V
I
C
= Limited by T
J(max)
MAXIMUM RATINGS
Collector−Emitter Voltage, T
J
= 25°C
DC Collector Current, limited by
T
J(max)
Pulsed Collector Current (Note 2)
Gate−Emitter Voltage
Maximum Junction Temperature
Short Circuit Withstand Time,
V
GE
= 15 V, V
CE
= 500V, T
J
150°C
IGBT DIE
C
G
E
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
1. Depending on thermal properties of assembly.
2. T
pulse
limited by T
jmax
, 10
ms
pulse, V
GE
= 15 V.
DIE OUTLINE
MECHANICAL DATA
Parameter
Die Size
Emitter Pad Size
Gate Pad Size
Die Thickness
Wafer Size
Top Metal
Back Metal
Max possible chips per wafer
Passivation frontside
Reject ink dot size
Recommended storage environment:
In original container, in dry nitrogen,
or temperature of 18−28°C,
30−65%RH
Value
3550 x 3550
See die layout
410 x 670
3
150
4
mm
AISI
2
mm
TiNiAg
996
Oxide−Nitride
25 mils
Type: Die on tape in ring−pack
Storage time: < 3 months
Unit
mm
2
mm
2
mm
2
mils
mm
ORDERING INFORMATION
Device
NGTD14T65F2WP
NGTD14T65F2SWK
Inking?
Yes
Yes
Shipping
Bare Wafer on Tape
Sawn Wafer on Tape
©
Semiconductor Components Industries, LLC, 2016
1
August, 2016 − Rev. 1
Publication Order Number:
NGTD14T65F2WP/D
NGTD14T65F2
ELECTRICAL CHARACTERISTICS
(T
J
= 25°C, unless otherwise specified)
Parameter
STATIC CHARACTERISTICS
Collector−Emitter Breakdown Voltage
Collector−Emitter Saturation Voltage
Gate−Emitter Threshold Voltage
Collector−Emitter Cutoff Current
Gate Leakage Current
DYNAMIC CHARACTERISTICS
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
V
CE
= 20 V, V
GE
= 0 V, f = 1
MHz
C
ies
C
oes
C
res
3115
149
88
pF
pF
pF
V
GE
= 0 V, I
C
= 500
mA
V
GE
= 15 V, I
C
= 35 A
V
GE
= V
CE
, I
C
= 150
mA
V
GE
= 0 V, V
CE
= 650 V
V
GE
= 20 V, V
CE
= 0 V
V
(BR)CES
V
CE(sat)
V
GE(TH)
I
CES
I
GES
4.5
650
1.7
5.5
2.0
6.5
0.5
200
V
V
V
mA
nA
Test Conditions
Symbol
Min
Typ
Max
Units
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
DIE LAYOUT
E
G
E
E = Emitter pad
G = Gate pad
All dimensions in
mm
www.onsemi.com
2
NGTD14T65F2
Further Electrical Characteristic
Switching characteristics and thermal properties are depending strongly on module design and mounting technology and can
therefore not be specified for a bare die.
ON Semiconductor and
are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.
ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent
coverage may be accessed at
www.onsemi.com/site/pdf/Patent−Marking.pdf.
ON Semiconductor reserves the right to make changes without further notice to any products herein.
ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards,
regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or
specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer
application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not
designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification
in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized
application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and
expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such
claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This
literature is subject to all applicable copyright laws and is not for resale in any manner.
PUBLICATION ORDERING INFORMATION
LITERATURE FULFILLMENT:
Literature Distribution Center for ON Semiconductor
19521 E. 32nd Pkwy, Aurora, Colorado 80011 USA
Phone:
303−675−2175 or 800−344−3860 Toll Free USA/Canada
Fax:
303−675−2176 or 800−344−3867 Toll Free USA/Canada
Email:
orderlit@onsemi.com
N. American Technical Support:
800−282−9855 Toll Free
USA/Canada
Europe, Middle East and Africa Technical Support:
Phone: 421 33 790 2910
Japan Customer Focus Center
Phone: 81−3−5817−1050
ON Semiconductor Website: www.onsemi.com
Order Literature:
http://www.onsemi.com/orderlit
For additional information, please contact your local
Sales Representative
www.onsemi.com
3
NGTD14T65F2WP/D
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参数对比
与NGTD14T65F2SWK相近的元器件有:NGTD14T65F2WP。描述及对比如下:
型号 NGTD14T65F2SWK NGTD14T65F2WP
描述 IGBT TRENCH FIELD STOP 650V DIE IGBT TRENCH FIELD STOP 650V DIE
IGBT 类型 沟槽型场截止 沟槽型场截止
电压 - 集射极击穿(最大值) 650V 650V
脉冲电流 - 集电极 (Icm) 120A 120A
不同 Vge,Ic 时的 Vce(on) 2V @ 15V,35A 2V @ 15V,35A
输入类型 标准 标准
工作温度 -55°C ~ 175°C(TJ) -55°C ~ 175°C(TJ)
安装类型 表面贴装 表面贴装
封装/外壳 模具 模具
供应商器件封装 模具 模具
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