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NJG1106KB2-TE1

RF Amplifier 800 MHz Low Noise

器件类别:热门应用    无线/射频/通信   

厂商名称:NJR

器件标准:

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器件参数
参数名称
属性值
Product Attribute
Attribute Value
制造商
Manufacturer
NJR
产品种类
Product Category
RF Amplifier
RoHS
Details
安装风格
Mounting Style
SMD/SMT
封装 / 箱体
Package / Case
FLP-6-B2
类型
Type
General Purpose Amplifier
Operating Frequency
1 GHz
Gain
17 dB
NF - Noise Figure
1.3 dB
测试频率
Test Frequency
820 MHz
OIP3 - Third Order Intercept
13 dBm
工作电源电流
Operating Supply Current
3.4 mA
最小工作温度
Minimum Operating Temperature
- 40 C
最大工作温度
Maximum Operating Temperature
+ 85 C
系列
Packaging
Reel
Number of Channels
1 Channel
Pd-功率耗散
Pd - Power Dissipation
450 mW
工厂包装数量
Factory Pack Quantity
3000
电源电压-最大
Supply Voltage - Max
5.5 V
电源电压-最小
Supply Voltage - Min
2.5 V
文档预览
NJG1106KB2
800MHz BAND LOW NOISE AMPLIFIER GaAs MMIC
nGENERAL
DESCRIPTION
NJG1106KB2 is a low noise amplifier GaAs MMIC
designed for 800MHz band cellular phone handsets.
This amplifier provides low noise figure of 1.3dB and
low current consumption of 3mA at low supply voltage
of 2.7V.
NJG1106KB2 includes internal self-bias circuit and
input DC blocking capacitor in a ultra small and ultra
thin package of FLP6-B2.
nFEATURES
lLow
voltage operation
lLow
current consumption
lSmall
signal gain
lLow
noise figure
lHigh
Input IP3
lHigh
Output IP3
lUltra
small & ultra thin package
nPIN
CONFIGURATION
KB2 Type
(Top View)
PIN CONNECTION
nPACKAGE
OUTLINE
NJG1106KB2
+2.7V typ.
2.5mA typ.
17dB typ. @f=820MHz
1.3dB typ. @f=820MHz
-4dBm typ. @f=820.0+820.1MHz
+13dBm typ. @f=820+820.1MHz
FLP6-B2 (Mount Size: 2.1x2.0x0.75mm)
4
3
5
AMP
2
1.RF
out
2.GND
3.EXTCAP
4.GND
5.GND
6.RF
in
6
1
Package orientation mark
Note: Specifications and description listed in this catalog are subject to change without prior notice.
-1
-
NJG1106KB2
nABSOLUTE
MAXIMUM RATINGS
PARAMETER
Drain Voltage
Input Power
Power Dissipation
Operating Temp.
Storage Temp.
SYMBOL
V
DD
Pin
P
D
T
opr
T
stg
V
DD
=2.7V
Tj=125°C, mount on PCB
FR4 20X20X0.2mm
CONDITIONS
(T
a
=+25°C, Z
s
=Z
l
=50Ω)
RATINGS
UNITS
6.0
+15
450
-40 ~ +85
-55 ~ +125
V
dBm
mW
°C
°C
nELECTRICAL
CHARACTERISTICS
PARAMETER
Operating frequency
Drain voltage
Operating current
Small signal gain
Gain flatness
Noise figure
Pout at 1dB gain
compression point
Input 3rd order
Intercept point
Output 3rd order
Intercept point
RF Input port
VSWR
RF Output port
VSWR
SYMBOL
freq
V
DD
I
DD
Gain
G
flat
NF
P
-1dB
IIP3
OIP3
VSWR
i
VSWR
o
V
DD
=2.7V, f=820MHz
f=820.0+820.1MHz
f=820.0+820.1MHz
V
DD
=2.7V, f=820MHz
V
DD
=2.7V, f=820MHz
f=810~885MHz
RF OFF
(V
DD
=2.7V, f=820MHz, T
a
=+25°C, Z
s
=Z
l
=50Ω)
CONDITIONS
MIN
TYP
MAX
UNITS
800
2.5
-
15.0
-
-
-4.0
-8.0
+9.0
-
-
820
2.7
2.5
17.0
0.5
1.3
0.0
-4.0
+13.0
1.5
1.5
1000
5.5
3.4
19.0
1.0
1.5
-
-
-
2.0
2.0
MHz
V
mA
dB
dB
dB
dBm
dBm
dBm
-2-
NJG1106KB2
nTERMINAL
INFORMATION
Pin
1
Function
RFout
Description
RF output and voltage supply pin. External matching circuits and a bypass
capacitor is required. L4 is a RF choke inductor and C1 is a DC blocking
capacitor. These elements are used as output matching circuit. C2 is a bypass
capacitor. (Please refer to “RECOMMENDED CIRCUIT”)
Ground pin. To keep good RF grounding performance, please use multiple via
holes to connect with ground plane and this pin.
An external bypass capacitor is required. (Please refer to “RECOMMENDED
CIRCUIT”)
RF input pin. A DC blocking capacitor is not required. An external matching circuit
is required. (Please refer to “RECOMMENDED CIRCUIT”)
2,4,5 GND
3
6
EXTCAP
RFin
-3-
NJG1106KB2
nTYPICAL
CHARACTERISTICS
NJG1106KB2 S21,NF vs. freq
VDD=2.7V, IDD=2.9mA, Ta=25
o
C
20
Gain
NJG1106KB2 S11,S21,S12,S22 vs. freq
VDD=2.7V, IDD=2.9mA, Ta=25 C
3.0
25
20
S21
o
50
40
30
20
S12 (dB)
10
0
S11
S22
S11, S21, S22 (dB)
15
2.5
15
10
5
0
-5
-10
-15
S12
Gain (dB)
10
2.0
NF (dB)
-10
-20
-30
-40
5
NF
1.5
-20
0
700
750
800
850
900
950
1.0
1000
-25
0
500
1000
1500
-50
2000
freq (MHz)
NJG1106KB2 Pout,Gain vs. Pin
VDD=2.7V, IDD=2.9mA, Freq=820MHz, Ta=25 C
5
Gain
o
freq (MHz)
NJG1106KB2 Pout,IM3 vs. Pin
o
VDD=2.7V, IDD=2.9mA, Freq=820+820.1MHz, Ta=25 C
20
0
Pout
20
0
P-1dB=-0.5dBm
Pout (dBm)
Pout (dBm)
-5
-10
-15
-20
-25
-45
15
-20
-40
-60
OIP3=+13.7dBm
IIP3=-4.1dBm
Pout
10
Gain (dB)
-80
5.0
-40
-35
-30
-25
-20
-15
-10
-5
-100
-45
IM3
-40
-35
-30
-25
-20
-15
-10
-5
Pin (dBm)
Pin (dBm)
Equations of OIP3 and IIP3
3 × Pout - IM3
OIP3 =
2
IIP3 = OIP3 - Gain @ Pin=-40dBm
-4-
NJG1106KB2
nTYPICAL
CHARACTERISTICS
NJG1106KB2 Gain,NF vs. VDD
Freq=820MHz,Ta=25
o
C
18.0
2.0
3.2
NJG1106KB2 IDD vs. VDD
Freq=820MHz,Ta=25 C
o
17.8
Gain
1.8
3.1
Gain (dB)
IDD (mA)
NF (dB)
17.6
1.6
3.0
17.4
NF
1.4
2.9
17.2
1.2
2.8
17.0
2.0
2.5
3.0
3.5
4.0
4.5
5.0
5.5
1.0
6.0
2.7
2.0
2.5
3.0
3.5
4.0
4.5
5.0
5.5
6.0
VDD (V)
VDD (V)
NJG1106KB2 OIP3,IIP3 vs. VDD
Freq=820+820.1MHz, Ta=25 C
20
IIP3
o
NJG1106KB2 OIP3,IIP3 vs. Freq
VDD=2.7V, IDD=3mA, Freq=820+820.1MHz, Ta=25
o
C
0
20
0
18
-2
18
-2
OIP3 (dBm)
IIP3 (dBm)
OIP3(dBm)
16
OIP3
-4
16
IIP3
-4
14
-6
14
OIP3
-6
12
-8
12
-8
10
2.0
2.5
3.0
3.5
4.0
4.5
5.0
5.5
-10
6.0
10
800
820
840
860
880
-10
900
VDD (V)
freq (MHz)
Equations of OIP3 and IIP3
3 × Pout - IM3
OIP3 =
2
IIP3 = OIP3 - Gain @ Pin=-40dBm
-5-
IIP3 (dBm)
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