NJG1107KB2
1.5/1.9GHz LNA GaAs MMIC
nGENERAL
DESCRIPTION
NJG1107KB2 is a Low Noise Amplifier GaAs MMIC
designed for 1.5GHz and 1.9GHz band digital cellular phone
and Japanese PHS handsets. This amplifier provides low
noise figure, high gain and high IP3 operated by single low
positive power supply.
This amplifier
includes internal self-bias circuit and input
DC blocking capacitor.
An ultra small and thin package of
FLP6 is adopted.
nFEATURES
lLow
voltage operation
lLow
current consumption
lHigh
small signal gain
lLow
noise figure
lHigh
Input IP3
lUltra
small & ultra thin package
nPACKAGE
OUTLINE
NJG1107KB2
+2.7V typ.
3.0mA typ.
17dB typ. @f=1.49GHz
15dB typ. @f=1.96GHz
1.2dB typ. @f=1.49GHz
1.2dB typ. @f=1.96GHz
-4.0dBm typ. @f=1.4900+1.4901GHz
-2.0dBm typ. @f=1.9600+1.9601GHz
FLP6-B2 (Mount Size: 2.1x2.0x0.75mm)
l
This amplifier can be tuned into various frequency range.(Best for 1.5GHz or 1.9GHz Band)
nPIN
CONFIGURATION
KB2 Type
(Top View)
4
3
5
AMP
2
PIN Connection
1.RFout
2.GND
3.EXTCAP
4.GND
5.GND
6.RFin
6
1
Orientation Mark
Note: Specifications and description listed in this catalog are subject to change without prior notice.
-1-
NJG1107KB2
nABSOLUTE
MAXIMUM RATINGS
PARAMETER
Drain Voltage
Input Power
Power Dissipation
Operating Temp.
Storage Temp.
SYMBOL
V
DD
Pin
P
D
T
opr
T
stg
CONDITIONS
V
DD
=2.7V
(T
a
=+25°C, Z
s
=Z
l
=50Ω)
RATINGS
UNIT
6.0
+15
450
-40~+85
-55~+125
V
dBm
mW
°C
°C
nELECTRICAL
CHARACTERISTICS 1 (1.5GHz Band)
(V
DD
=2.7V, f=1.49GHz, T
a
=+25°C, Z
s
=Z
l
=50Ω, TEST CIRCUIT1)
PARAMETER
SYMBOL
CONDITIONS
MIN
TYP
MAX
UNIT
Operating Frequency
Drain Voltage
Operating Current
Small Signal Gain
Gain Flatness
Noise Figure
Pout at 1dB Gain
Compression point
Input 3rd Order
Intercept Point
RF Input Port
VSWR
RF Output Port
VSWR
freq1
V
DD
I
DD
Gain
G
flat
NF
P
-1dB
IIP3
VSWR
i
VSWR
o
f=1.49+1.4901GHz
RFin=-35dBm
RF OFF
f=1.47~1.51GHz
1.47
2.5
-
15.0
-
-
-6.0
-6.0
-
1.49
2.7
3.0
17.0
0.5
1.2
-2.0
-4.0
1.6
1.6
1.51
5.5
3.8
19.0
1.0
1.4
-
-
2.2
2.2
GHz
V
mA
dB
dB
dB
dBm
dBm
nELECTRICAL
CHARACTERISTICS 2 (1.9GHz Band)
(V
DD
=2.7V, f=1.96GHz, T
a
=+25°C, Z
s
=Z
l
=50Ω, TEST CIRCUIT1)
PARAMETER
SYMBOL
CONDITIONS
MIN
TYP
MAX
UNIT
Operating Frequency
freq2
1.89
1.96
1.99
GHz
Drain Voltage
V
DD
2.5
2.7
5.5
V
Operating Current
I
DD
RF OFF
-
3.0
3.8
mA
Small Signal Gain
Gain
13.0
15.0
17.0
dB
Gain Flatness
G
flat
f=1.89~1.99GHz
-
0.5
1.0
dB
Noise Figure
NF
-
1.2
1.4
dB
Pout at 1dB Gain
P
-1dB
-3.0
+1.0
-
dBm
Compression point
Input 3rd order
f=1.96+1.9601GHz
IIP3
-6.0
-2.0
-
dBm
Intercept Point
RFin=-30dBm
RF Input Port
VSWR
i
-
1.6
2.2
VSWR
RF Output Port
VSWR
o
-
1.6
2.2
VSWR
-2-
NJG1107KB2
nELECTRICAL
CHARACTERISTICS 3 (1.8GHz Band)
(V
DD
=2.7V, f=1.76GHz, T
a
=+25°C, Z
s
=Z
l
=50Ω, TEST CIRCUIT1)
PARAMETER
SYMBOL
CONDITIONS
MIN
TYP
MAX
UNIT
Operating Frequency
Drain Voltage
Operating Current
Small Signal Gain
Gain Flatness
Noise Figure
Pout at 1dB
Compression point
Input 3rd order
Intercept Point
RF Input Port
VSWR
RF Output Port
VSWR
freq3
V
DD
I
DD
Gain
G
flat
NF
P
-1dB
IIP3
VSWR
i
VSWR
o
f=1.76+1.7601GHz
RFin=-35dBm
RF OFF
f=1.75~1.78GHz
1.75
2.5
-
-
-
-
-
-
-
-
1.76
2.7
3.0
16.0
0.5
1.2
1.1
-2.0
1.6
1.6
1.78
5.5
3.8
-
-
-
-
-
-
-
GHz
V
mA
dB
dB
dB
dBm
dBm
-
-
nELECTRICAL
CHARACTERISTICS 4 (1.5GHz Band ,Low Gain Version)
(V
DD
=2.7V, f=1.49GHz, T
a
=+25°C, Z
s
=Z
l
=50Ω, TEST CIRCUIT2)
PARAMETER
SYMBOL
CONDITIONS
MIN
TYP
MAX
UNIT
Operating Frequency
freq4
1.47
1.49
1.51
GHz
Drain Voltage
V
DD
2.5
2.7
5.5
V
Operating Current
Small Signal Gain
Gain Flatness
Noise Figure
Pout at 1dB
Compression point
Input 3rd order
Intercept Point
RF Input Port
VSWR
RF Output Port
VSWR
I
DD
Gain
G
flat
NF
P
-1dB
IIP3
VSWR
i
VSWR
o
f=1.49+1.4901GHz
RFin=-35dBm
RF OFF
f=1.47~1.51GHz
-
-
-
-
-
-
-
-
3.0
14.0
0.5
1.2
0.0
-3.0
1.6
1.6
3.8
-
-
-
-
-
-
-
mA
dB
dB
dB
dBm
dBm
-3-
NJG1107KB2
nPIN
CONFIGURATION
Pin
1
Function
RFout
Description
RF output and voltage supply pin. External matching circuits and a bypass capacitor
is required. L3 is a RF choke inductor and C1 is a DC blocking capacitor. These
elements are used as output matching circuit. C2 is a bypass capacitor. (Please refer
to “TEST CIRCUIT”)
Ground pin. To keep good RF grounding performance, please use multiple via holes
to connect with ground plane and this pin.
An external bypass capacitor is required. (Please refer to “TEST CIRCUIT”)
RF input pin. A DC blocking capacitor is not required. An external matching circuit is
required. (Please refer to “TEST CIRCUIT”)
2,4,5 GND
3
6
EXTCAP
RFin
-4-
NJG1107KB2
nTYPICAL
CHARACTERISTICS (1.5GHz Band)
NF,Gain vs. frequency
(V =2.7V,I =3mA)
2.6
DD
DD
S21,S11,S22,S12 vs. frequency
(V =2.7V,I =3mA)
20
25
20
DD
DD
50
40
30
20
10
S21
2.2
16
S21,S11,S22 (dB)
15
10
5
0
-5
-10
S22
S12
S11
Gain (dB)
NF (dB)
1.8
12
0
-10
-20
-30
-40
-50
1.4
8
1
4
-15
-20
0.6
1.4
1.44
1.48
1.52
frequency (GHz)
1.56
1.6
0
-25
0.5
1
1.5
frequency (GHz)
2
2.5
Pout vs. Pin
(V =2.7V,f=1.49GHz)
DD
Pout, IM3 vs. Pin
(V
10
5
10
0
-10
Pout,IM3 (dBm)
-20
-30
-40
IM3
-50
-60
-70
-80
-40
IIP3
-3.15dBm
DD
=2.7V,I =3mA,f=1.49+1.4901GHz)
DD
10
Pout
0
Pout (dBm)
P-1dB
+1.17dBm
0
-5
-10
-10
-15
-20
-20
-25
-30
-40
-30
-20
Pin (dBm)
-10
0
-30
-30
-20
Pin (dBm)
-10
0
Gain vs. V
19
DD
NF, I
(f=1.49GHz)
1.3
DD
vs. V
DD
(f=1.49GHz)
3.4
18.5
1.2
3.3
18
Gain (dB)
I
DD
(mA)
NF (dB)
1.1
3.2
17.5
1
17
0.9
3.1
16.5
3
16
2.5
0.8
3
3.5
4
V
DD
(V)
4.5
5
5.5
2.5
3
3.5
4
V
DD
(V)
4.5
5
5.5
2.9
-5-
S12 (dB)
