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NJG1309VB2-TE1

RF Amplifier Transmitting

器件类别:热门应用    无线/射频/通信   

厂商名称:New JRC

厂商官网:https://www.njr.com

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器件参数
参数名称
属性值
Product Attribute
Attribute Value
制造商
Manufacturer
New JRC
产品种类
Product Category
RF Amplifier
RoHS
Details
Operating Frequency
1.9 GHz
Gain
37 dB
最小工作温度
Minimum Operating Temperature
- 40 C
最大工作温度
Maximum Operating Temperature
+ 85 C
安装风格
Mounting Style
SMD/SMT
封装 / 箱体
Package / Case
SSOP-20-B2
系列
Packaging
Cut Tape
系列
Packaging
MouseReel
系列
Packaging
Reel
Pd-功率耗散
Pd - Power Dissipation
600 mW
工厂包装数量
Factory Pack Quantity
2000
文档预览
NJG1309VB2
TRANSMITTING POWER AMPLIFIER
GaAs MMIC
nGENERAL
DESCRIPTION
NJG1309VB2 is a positive voltage supply type GaAs power
amplifier MMIC designed for Digital Cordless Phone.
Gate bias and Gain control bias terminals are supplied
by positive voltage.
These terminals have high-impedance characteristics.
NJG1309VB2 can reduce power
consumption at receiving mode by “Standby Function”.
nPACKAGE
OUTLINE
NJG1309VB2
nFEATURES
lOperating
frequency range
lPositive
voltage supply
lLow
current consumption
lHigh
gain
lGain
control range
lPackage
f=1.9GHz typ.
V
DD2,3
=+3.0V typ. +V
GG
=+1.0V typ.
150mA typ. @21dBm output power
37dB typ. @21dBm output power
26dB typ. @21dBm output power
SSOP20-B2 (Pin pitch 0.5mm)
nPIN
CONFIGURATION
V Type
(Top View)
1
2
3
4
5
6
7
8
9
10
DC/DC
Converter
CR
Oscillator
20
19
18
17
16
15
14
13
12
11
Pin Connection
1.V
STB
2.+V
GG
3.-V
GG1
4.GND
5.RF
in
6.GND
7.GND
8.-V
GG2
9.GND
10.GND
11.RF
out
12.GND
13.V
DD3
14.GND
15V
DD2
16.GND
17.GND
18.-V
CONT
19.+V
CONT
20.V
DD1
-1-
NJG1309VB2
n
ABSOLUTE MAXIMUM RATINGS
(Z
s
=Z
l
=50Ω, T
a
=25°C)
PARAMETER
Drain Voltage 1
Drain Voltage 2
Gate Voltage
Gain Control Voltage
Standby Voltage
Input Power
Power Dissipation
Operating Temperature
Storage Temperature
SYMBOL
V
DD1
V
DD2,3
+V
GG
+V
CONT
V
STB
P
in
P
D
T
opr
T
stg
V
DD2,3
=3.0V, +V
GG
=1.0V
At on PCB board
+V
GG
=1.0V
+V
GG
=1.0V
V
DD2,3
=3.0V
V
DD2,3
=3.0V
CONDITIONS
RATINGS
5.5
6.0
-0.5~V
DD1
+0.5
-0.5~V
DD1
+0.5
-0.5~V
DD1
+0.5
3.0
600
-40~+85
-55~+150
UNITS
V
V
V
V
V
dBm
mW
°C
°C
n
ELECTRICAL CHARACTERISTICS 1
(V
DD1
=3V,V
STB
=2.7V, +V
CONT
=0V, f=1.9GHz, Z
s
=Z
l
=50Ω, T
a
=25°C)
PARAMETER
perating Frequency
Drain Voltage 1
Drain Voltage 2
Standby Terminal
Input Voltage (H)
Standby Terminal
Input Voltage (L)
Gain Control Voltage
Gate Voltage
Idle Current *1
Operating Current *1
V
DD1
Terminal Current(H)
V
DD1
Terminal Current(L)
V
GG1
Terminal Current
+V
CONT
Terminal Current
SYMBOL
freq
V
DD1
V
DD2,3
V
STB
(H)
V
STB
(L)
+V
CONT
+V
GG
I
idle
I
DD2,3
I
DD1
(H)
I
DD1
(L)
I
GG
I
CONT
V
DD2,3
=3.0V, I
idle
=130mA
V
DD2,3
=3.0V, RF OFF
V
DD2,3
=3.0V,I
idle
=130mA
P
out
=21dBm
V
DD2,3
=3V,P
out
=21dBm
V
STB
=0V,V
DD2,3
=0V
+V
GG
=2.0V
+V
CONT
=2.0V
CONDITIONS
V
DD2,3
=3.0V
MIN
1.85
2.7
2.9
2.4
0.0
0.0
0.6
125
-
-
-
-
-
TYP
1.90
3.0
3.0
2.7
0.0
-
1.0
130
150
0.9
0.5
5
5
MAX
1.95
5.2
5.2
3.0
0.6
2.0
1.4
135
165
1.25
1.0
10
10
UNITS
GHz
V
V
V
V
V
V
mA
mA
mA
uA
uA
uA
- 2-
NJG1309VB2
nELECTRICAL
CHARACTERISTICS 1
(V
DD1
=3V, V
STB
=2.7V, +V
CONT
=0V, f=1.9GHz, Z
s
=Z
l
=50Ω, T
a
=25°C)
PARAMETER
V
STB
Terminal Current
-V
GG
,-V
CONT
Rise Time*2
-V
GG
,-V
CONT
Fall Time*2
+V
GG
Terminal Input
Resistance
+V
CONT
Terminal Input
Resistance
Power Gain
Gain Flatness
SYMBOL
I
STB
TRDD
T
STB
R1
R2
Gain
G
flat
V
DD2,3
=3.0V, I
idle
=130mA
P
out
=21dBm
V
DD2,3
=3.0V, I
idle
=130mA
P
out
=21dBm
V
DD2,3
=3.0V, I
idle
=130mA
Gain Control Range
Pout at 1dB Gain
Compression point
Harmonics
G
cont
P
out
=21dBm
+V
CONT
=0.0 to 2.0V
P
-1dB
P
hm
V
DD2,3
=3.0V, I
idle
=130mA
V
DD2,3
=3.0V, I
idle
=130mA
P
out
=21dBm
V
DD2,3
=3.0V, I
idle
=130mA
Load VSWR tolerance
-
P
out
=21dBm,
Load VSWR=1:4 All Phase
-
-
21
-40
-
-30
dBm
dBc
21
26
31
dB
0.01uF Load Capacitance
CONDITIONS
MIN
-
-
-
300
300
34
-
TYP
0.5
-
-
500
500
37
1.0
MAX
1.0
400
20
700
700
40
1.5
UNIT
uA
uSEC
mSEC
kΩ
kΩ
dB
dB
Parasitic oscillation
for fundamental signal
level:
-60dBc
-
*1: Total current of V
DD2
terminal and V
DD3
terminal.
*2: Timing chart of input terminal voltage is mentioned in the separate sheet of paper.
-3-
NJG1309VB2
nELECTRICAL
CHARACTERISTICS 2
(V
DD1
=3V, V
STB
=2.7V, +V
CONT
=0V, f=1.765GHz, Z
s
=Z
l
=50Ω, T
a
=25°C)
PARAMETER
Operating frequency
Drain Voltage 1
Drain Voltage 2
Standby Terminal
Input Voltage (H)
Standby Terminal
Input Voltage (L)
Gain Control Voltage
Gate Voltage
Idle Current *1
Operating Current *1
V
DD1
Terminal Current(H)
V
DD1
Terminal Current(L)
V
GG
Terminal Current
+V
CONT
Terminal Current
V
STB
Terminal Current
-V
GG
,-V
CONT
Rise Time*2
-V
GG
,-V
CONT
Fall Time*2
+V
GG
Terminal Input
Resistance
+V
CONT
Terminal Input
Resistance
Power Gain
Gain Flatness
SYMBOL
freq
V
DD1
V
DD2,3
V
STB
(H)
V
STB
(L)
+V
CONT
+V
GG
I
idle
I
DD2,3
I
DD1
(H)
I
DD1
(L)
I
GG
I
CONT
I
STB
TRDD
T
STB
R1
R2
Gain
G
flat
V
DD2,3
=3.0V, I
idle
=130mA
P
out
=21dBm
V
DD2,3
=3.0V, I
idle
=130mA
P
out
=21dBm
V
DD2,3
=3.0V, I
idle
=130mA
Gain Control Range
Output Power at
1dB Compression point
Harmonics
G
cont
P
out
=21dBm
+V
CONT
=0.0 to 2.0V
P
-1dB
P
hm
V
DD2,3
=3.0V, I
idle
=130mA
V
DD2,3
=3.0V, I
idle
=130mA
P
out
=21dBm
-
-
20
-40
-
-
dBm
dBc
-
25
-
dB
0.01uF Load Capacitance
V
DD2,3
=3.0V, I
idle
=130mA
V
DD2,3
=3.0V, RF OFF
V
DD2,3
=3.0V,I
idle
=130mA
P
out
=21dBm
V
DD2,3
=3V,P
out
=21dBm
V
STB
=0V,V
DD2,3
=0V
+V
GG
=2.0V
+V
CONT
=2.0V
CONDITIONS
V
DD2,3
=3.0V
MIN
1.750
2.7
2.9
2.4
0.0
0.0
0.6
125
-
-
-
-
-
-
-
-
300
300
-
-
TYP
1.765
3.0
3.0
2.7
0.0
-
1.0
130
155
0.9
0.5
5
5
0.5
-
-
500
500
36
0.5
MAX
1.780
5.2
5.2
3.0
0.6
2.0
1.4
135
-
-
-
-
-
-
400
20
700
700
-
-
UNITS
GHz
V
V
V
V
V
V
mA
mA
mA
uA
uA
uA
uA
uSEC
mSEC
kΩ
kΩ
dB
dB
-4-
NJG1309VB2
nELECTRICAL
CHARACTERISTICS 2
(V
DD1
=3V, V
STB
=2.7V, +V
CONT
=0V, f=1.765GHz, Z
s
=Z
l
=50Ω, T
a
=25°C)
PARAMETER
Load VSWR tolerance
SYMBOL
-
CONDITIONS
V
DD2,3
=3.0V, I
idle
=130mA
P
out
=21dBm,
Load VSWR=1:4 All Phase
MIN
TYP
MAX
UNITS
-
Parasitic oscillation
for fundamental signal
level:
-60dBc
*1:Total current of V
DD2
terminal and V
DD3
terminal.
*2:Timing chart of input terminal voltage is mentioned in the separate sheet of paper.
-5-
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