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NJM13700M

Operational Amplifier, 2 Func, 4000uV Offset-Max, BIPolar, PDSO16, DMP-16

器件类别:模拟混合信号IC    放大器电路   

厂商名称:New Japan Radio Co Ltd

器件标准:  

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器件参数
参数名称
属性值
是否无铅
不含铅
是否Rohs认证
符合
厂商名称
New Japan Radio Co Ltd
零件包装代码
SOIC
包装说明
SOP, SOP16,.25
针数
16
Reach Compliance Code
compliant
ECCN代码
EAR99
放大器类型
OPERATIONAL AMPLIFIER
架构
TRANSCONDUCTANCE
最大平均偏置电流 (IIB)
8 µA
25C 时的最大偏置电流 (IIB)
5 µA
最小共模抑制比
80 dB
标称共模抑制比
110 dB
频率补偿
YES
最大输入失调电压
4000 µV
JESD-30 代码
R-PDSO-G16
JESD-609代码
e6
长度
10 mm
低-失调
NO
负供电电压上限
-18 V
标称负供电电压 (Vsup)
-15 V
功能数量
2
端子数量
16
最高工作温度
85 °C
最低工作温度
-40 °C
封装主体材料
PLASTIC/EPOXY
封装代码
SOP
封装等效代码
SOP16,.25
封装形状
RECTANGULAR
封装形式
SMALL OUTLINE
峰值回流温度(摄氏度)
260
电源
+-15 V
认证状态
Not Qualified
座面最大高度
2 mm
标称压摆率
50 V/us
供电电压上限
18 V
标称供电电压 (Vsup)
15 V
表面贴装
YES
技术
BIPOLAR
温度等级
INDUSTRIAL
端子面层
Tin/Bismuth (Sn/Bi)
端子形式
GULL WING
端子节距
1.27 mm
端子位置
DUAL
处于峰值回流温度下的最长时间
NOT SPECIFIED
标称均一增益带宽
2000 kHz
宽度
5 mm
文档预览
NJM13600/13700
DUAL OPERATIONAL TRANSCONDUCTANCE AMPLIFIER
GENERAL DESCRIPTION
The NJM13600/13700 consist of two current controlled trans
conductance amplifiers each with differential inputs and a push
pull output. The two amplifiers share common supplies but
otherwise operate independently. Linearizing diodes are
provided at the inputs to reduce distortion and allow higher input
levels. The result is a 10 dB signal-to-noise improvement
referenced to 0.5 percent THD.Controlled impedance buffers
are provided which are especially designed to complement the
dynamic range of the amplifiers.
FEATURES
Package Outline
Bipolar Technology
PIN CONFIGURATION
PIN FUNCTION
1.
2.
3.
4.
5.
6.
7.
8.
AMP BIAS INPUT A
DIODE BIAS A
+INPUT
–INPUT
OUTPUT A
V
-
PACKAGE OUTLINE
NJM13600D
NJM13700D
NJM13600M
NJM13700M
DIP16,DMP16
9. BUFFER OUTPUT B
10. BUFFER INPUT B
11. V
+
12. OUTPUT B
13. -INPUT B
14. +INPUT B
15. DIODE BIAS B
16. AMP BIAS INPUT B
BUFFER INPUT A
BUFFER OUTPUT A
NJM13600D,NJM13600M
NJM13700D,NJM13700M
EQUIVALENT CIRCUIT
Ver.2006-04-06
-1-
NJM13600/13700
ABSOLUTE MAXIMUM RATINGS
( Ta=25˚C )
PARAMETER
Supply Voltage
Differential Input Voltage
Diode Bias Current
Amp Bias Current
Buffer Output Current
Power Dissipation
DC Input Voltage
Operating Temperature Range
Storage Temperature Range
SYMBOL
+ -
V /V
V
ID
I
D
I
ABC
I
O
P
D
V
IN
T
opr
T
stg
RATINGS
36 or ±18
±5
2
2
20
( DIP16 ) 570
( DMP16 ) 700 (note)
+
-
V ~V
-40~+85
-40~+125
UNIT
V
V
mA
mA
mA
mW
V
˚C
˚C
( note ) At on a ceramic PCB ( 10x20x0.635 mm )
ELECTRICAL CHARACTERISTICS
( V
+
/V
-
=±15V
,
Ta=25˚C,I
ABC
=500µA )
PARAMETER
Input Offset Voltage (V
O S
)
Input Offset Voltage
V
O S
Including Diodes
Input Offset Change
Input Bias Current
Input Bias Current
Forward Transconductance
gm Tracking
Peak Output Current
Peak Output Current
Peak Output Current
Peak Output Voltage Positive
Peak Output Voltage Negative
Operating Current
V
O S
Sensitivity Positive
V
O S
Sensitivity Negative
Input Offset Current
CMRR
Common Mode Range
Cross Talk
Differential Input Current
Leakage Current
Input Resistance
Open Loop Bandwidth
Slew Rate
Buffer Input Current
Peak Buffer Output Voltage
SYMBOL
TEST CONDITION
I
ABC
=5µA
V
IO
5µA
I
ABC
500µA
I
B
gm
I
OP
V
OP
(-20~+75˚C)
Diode Bias Current
,I
D
=500µA
(-20~+75˚C)
R
L
=0,I
ABC
=5µA
R
L
=0,I
ABC
=5µA
R
L
=0,I
ABC
=500µA
R
L
=0 (-20~+75˚C)
R
L
=∞,5µA
I
ABC
500µA
R
L
=∞,5µA
I
ABC
500µA
I
ABC
=500µA,
two circuit
+
∆V
O S
/∆V
-
∆V
O S
/∆V
MIN.
-
-
-
-
-
-
6700
5400
-
-
350
300
+12
-12
-
76.5
76.5
-
80
± 12
-
-
-
10
-
-
-
10
13600
TYP.
MAX.
0.4
5
0.3
5
0.5
5
0.1
-
0.4
5
1
8
9600 13000
-
-
0.3
-
5
-
500
650
-
-
+14.2
-14.4
2.6
94
94
0.1
110
± 13.5
-100
0.02
0.2
26
2
50
0.4
-
-
-
-
-
-
0.6
-
-
-
100
100
-
-
-
5
-
MIN.
-
-
-
-
-
-
6700
5400
-
-
350
300
+12
-12
-
76.5
76.5
-
80
± 12
-
-
-
10
-
-
-
10
I
CC
SVR
I
IO
CMR
V
ICM
CT
I
ID
I
L EAK
R
IN
SR
20Hz<f<20kHz ( note2 )
I
ABC
=0,Input=±4V
I
ABC
=0
(Refer to Test Circuit)
( note2 )
( note2 )
13700
TYP. MAX.
0.4
4
0.3
4
0.5
5
0.1
3
0.4
5
1
8
9600 13000
-
-
0.3
-
0
-
500
650
-
-
+14.
-
2
-14.4
-
2.6
-
94
-
94
-
0.1
0.6
110
-
±
-
13.5
-100
-
0.02
100
0.2
100
26
-
2
-
50
-
0.4
5
-
-
UNIT
mV
mV
mV
mV
µA
µA
µS
µS
dB
µA
µA
µA
V
V
mA
dB
dB
µA
dB
V
dB
nA
nA
kΩ
MHz
V/µs
µA
V
( note1 ) Open unless otherwise specified. The inputs to the buffers are grounded and outputs are open.
( note2 ) R
OUT
=5kΩ connected from the buffer output to V
-
and the input of buffer is connected to the transconductance amplifier output.
I
AB C
=500µA
-2-
Ver.2006-04-06
NJM13600/13700
TEST CIRCUIT
Differential Input Current
Leakage Current
TYPICAL APPLICATIONS
Ver.2006-04-06
-3-
NJM13600/13700
TYPICAL CHARACTERISTICS
-4-
Ver.2006-04-06
NJM13600/13700
TYPICAL CHARACTERISTICS
Ver.2006-04-06
-5-
查看更多>
参数对比
与NJM13700M相近的元器件有:NJM13600D、NJM13600M、NJM13700D。描述及对比如下:
型号 NJM13700M NJM13600D NJM13600M NJM13700D
描述 Operational Amplifier, 2 Func, 4000uV Offset-Max, BIPolar, PDSO16, DMP-16 Operational Amplifier, 2 Func, 5000uV Offset-Max, BIPolar, PDIP16, DIP-16 Operational Amplifier, 2 Func, 5000uV Offset-Max, BIPolar, PDSO16, DMP-16 Operational Amplifier, 2 Func, 4000uV Offset-Max, BIPolar, PDIP16, DIP-16
是否无铅 不含铅 不含铅 不含铅 不含铅
是否Rohs认证 符合 符合 符合 符合
厂商名称 New Japan Radio Co Ltd New Japan Radio Co Ltd New Japan Radio Co Ltd New Japan Radio Co Ltd
零件包装代码 SOIC DIP SOIC DIP
包装说明 SOP, SOP16,.25 DIP, DIP16,.3 SOP, SOP16,.25 DIP, DIP16,.3
针数 16 16 16 16
Reach Compliance Code compliant compliant compliant compliant
ECCN代码 EAR99 EAR99 EAR99 EAR99
放大器类型 OPERATIONAL AMPLIFIER OPERATIONAL AMPLIFIER OPERATIONAL AMPLIFIER OPERATIONAL AMPLIFIER
架构 TRANSCONDUCTANCE TRANSCONDUCTANCE TRANSCONDUCTANCE TRANSCONDUCTANCE
最大平均偏置电流 (IIB) 8 µA 8 µA 8 µA 8 µA
25C 时的最大偏置电流 (IIB) 5 µA 5 µA 5 µA 5 µA
最小共模抑制比 80 dB 80 dB 80 dB 80 dB
标称共模抑制比 110 dB 110 dB 110 dB 110 dB
频率补偿 YES YES YES YES
最大输入失调电压 4000 µV 5000 µV 5000 µV 4000 µV
JESD-30 代码 R-PDSO-G16 R-PDIP-T16 R-PDSO-G16 R-PDIP-T16
JESD-609代码 e6 e6 e6 e6
长度 10 mm 19 mm 10 mm 19 mm
低-失调 NO NO NO NO
负供电电压上限 -18 V -18 V -18 V -18 V
标称负供电电压 (Vsup) -15 V -15 V -15 V -15 V
功能数量 2 2 2 2
端子数量 16 16 16 16
最高工作温度 85 °C 85 °C 85 °C 85 °C
最低工作温度 -40 °C -40 °C -40 °C -40 °C
封装主体材料 PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY
封装代码 SOP DIP SOP DIP
封装等效代码 SOP16,.25 DIP16,.3 SOP16,.25 DIP16,.3
封装形状 RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR
封装形式 SMALL OUTLINE IN-LINE SMALL OUTLINE IN-LINE
峰值回流温度(摄氏度) 260 NOT SPECIFIED 260 NOT SPECIFIED
电源 +-15 V +-15 V +-15 V +-15 V
认证状态 Not Qualified Not Qualified Not Qualified Not Qualified
座面最大高度 2 mm 4.7 mm 2 mm 4.7 mm
标称压摆率 50 V/us 50 V/us 50 V/us 50 V/us
供电电压上限 18 V 18 V 18 V 18 V
标称供电电压 (Vsup) 15 V 15 V 15 V 15 V
表面贴装 YES NO YES NO
技术 BIPOLAR BIPOLAR BIPOLAR BIPOLAR
温度等级 INDUSTRIAL INDUSTRIAL INDUSTRIAL INDUSTRIAL
端子面层 Tin/Bismuth (Sn/Bi) Tin/Bismuth (Sn/Bi) Tin/Bismuth (Sn/Bi) Tin/Bismuth (Sn/Bi)
端子形式 GULL WING THROUGH-HOLE GULL WING THROUGH-HOLE
端子节距 1.27 mm 2.54 mm 1.27 mm 2.54 mm
端子位置 DUAL DUAL DUAL DUAL
处于峰值回流温度下的最长时间 NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED
标称均一增益带宽 2000 kHz 2000 kHz 2000 kHz 2000 kHz
宽度 5 mm 7.62 mm 5 mm 7.62 mm
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