SEMICONDUCTOR
NKET800 Series
Phase Control Thyristor, 800A
(
Super MAGN- A
-
PAK Power Modules
)
RoHS
RoHS
N
ell
High Power Products
58
4-
2-
M
12
Super MAGN-A-PAK
132
150
FEATURES
•
High voltage
•
Electrically isolated by DBC ceramic
(
AI
2
O
3
)
• 3500
V
RMS
isolating voltage
•
Industrial standard package
•
High surge capability
•
Glass passivated chips
•
Modules uses high voltage power thyristor in
basic configurations
•
Simple mounting
•
UL approved file E320098
•
Compliant to RoHS
•
Designed and qualified for multiple level
120
180
APPLICATIONS
•
DC motor control and drives
•
Battery charges
•
Welders
•
Power converters
•
Lighting control
•
Heat and temperature control
1
3
K
G
PRODUCT SUMMARY
I
T(AV)
800 A
MAJOR RATINGS AND CHARACTERISTICS
SYMBOL
I
T(AV)
I
T(RMS)
I
TSM
I
2
t
t
I
2
√
V
DRM
/ V
RRM
TJ
Range
Range
CHARACTERISTICS
85 ° C
85 ° C
50 Hz
60 Hz
50 Hz
60 Hz
VALUES
800
1256
16000
16800
1280
1166
12800
400 to 1600
-40 to 125
kA
2
s
kA
2
√s
V
° C
A
UNITS
A
Page 1 of 4
15
78
76
8.
5
SEMICONDUCTOR
NKET800 Series
RoHS
RoHS
N
ell
High Power Products
ELECTRICAL SPECIFICATIONS
VOLTAGE RATINGS
TYPE
NUMBER
VOLTAGE
CODE
04
08
NKET800
12
14
16
V
RRM
/V
DRM
,
MAXIMUM REPETITIVE
PEAK REVERSE VOLTAGE
V
400
800
1200
1400
1600
V
RSM
/V
DSM
,
MAXIMUM NON
-
REPETITIVE
PEAK REVERSE VOLTAGE
V
500
900
1300
1500
1700
40
I
RRM
/I
DRM
AT
125 °
C
mA
FORWARD CONDUCTION
PARAMETER
Maximum average on-state current
at case temperature
Maximum RMS on-state current
Maximum peak, one-cycle, on-state
non-repetitive surge current
SYMBOL
I
T(AV)
I
T(RMS)
I
TSM
TEST CONDITIONS
180° conduction, half sine wave ,50Hz
180° conduction, half sine wave ,50Hz ,T
J
= 85
°
C
t = 10 ms
t = 8.3 ms
t = 10 ms
Maximum I
2
t for fusing
I
2t
t = 8.3 ms
t = 10 ms
t = 8.3 ms
Maximum I
2
√
for fusing
t
Maximum on-state voltage drop
Maximum holding current
Maximum latching current
2
t
I
√
VALUES
800
85
1256
16000
UNITS
A
°C
A
No voltage
reapplied
16800
Sine half wave,
initial T
J
=
T
J
maximum
1280
1166
896
815
12800
2.0
40~200
mA
400
kA
2
√s
V
kA
2
s
100%V
RRM
reapplied
t = 0.1 ms to 10 ms, no voltage reapplied
I
TM
= 1500A, T
J
= 25 ° C, 180° conduction
Anode supply = 12 V initial I
T
= 30 A, T
J
= 25 ° C
Anode supply = 12 V resistive load = 1
Gate pulse: 10 V, 100 s, T
J
= 25 ° C
V
TM
I
H
I
L
BLOCKING
PARAMETER
Maximum peak reverse and
off-state leakage current
RMS isolation Voltage
Critical rate of rise of
off-state voltage
SYMBOL
I
RRM
,
I
DRM
V
ISO
dV/dt
T
J
= 125 ° C
50 Hz, circuit to base,
all terminals shorted
T
J
= T
J
maximum,
exponential to 67 % rated V
DRM
TEST CONDITIONS
VALUES
40
2500 (1min)
3500 (1s)
500
UNITS
mA
V
V/ s
Page 2 of 4
SEMICONDUCTOR
NKET800 Series
RoHS
RoHS
N
ell
High Power Products
TRIGGERING
PARAMETER
Maximum peak gate power
Maximum average gate power
Maximum peak gate current
Maximum peak negative
gate voltage
Maximum required DC
gate voltage to trigger
Maximum required DC
gate current to trigger
Maximum gate voltage
that will not trigger
Maximum gate current
that will not trigger
Maximum rate of rise of
turned-on current
SYMBOL
P
GM
P
G(AV)
I
GM
- V
GT
V
GT
T
J
= 25 ° C
I
GT
V
GD
T
J
= T
J
maximum, 66.7% V
DRM
applied
I
GD
dI/dt
T
J
= 25ºC
,I
GM
= 1.5A ,t
r
≤
0.5 µs
10
150
mA
A/ s
Anode supply = 12 V,
resistive load; R
a
= 1
30~200
mA
V
t
p
≤
5 ms, T
J
= T
J
maximum
TEST CONDITIONS
t
p
≤
5 ms, T
J
= T
J
maximum
f = 50 Hz, T
J
= T
J
maximum
VALUES
10
3
3
10
V
0.7~2.0
UNITS
W
A
0.25
THERMAL AND MECHANICAL SPECIFICATIONS
PARAMETER
Maximum junction operating
temperature range
Maximum storage
temperature range
Maximum thermal resistance,
junction to ca se per junction
Maximum thermal resistance,
case to heatsink per module
SYMBOL
TJ
T
Stg
R
thJC
R
thCS
DC operation
Mounting surface, smooth , flat and greased
A mounting compound is recommended and the
torque should be rechecked after a period of
3 hours to allow for the spread of the compound.
Lubricated threads.
TEST CONDITIONS
VALUES
- 40 to 125
°C
- 40 to 125
0.054
° C/W
0.009
UNITS
Mounting
torque ± 10 %
IAP to heatsink ,M8
busbar to IAP ,M8
6 to 14
N.m
Approximate weight
3500
123.4
g
oz.
Case style
Super MAGN-A-PARK
ORDERING INFORMATION TABLE
Device code
800
1
2
3
-
-
-
Module type
Current rating
:
I
T
(
AV
)
Voltage code x
100 =
V
RRM
SEMICONDUCTOR
NKET800 Series
RoHS
RoHS
N
ell
High Power Products
On-state current vs voltage characteristic
Transient thermal impedance(junction-case)
Transient thermal impedance (° C/W)
On-state peak voltage (V)
On-state current (A)
Power consumption vs. average current
Time (s)
Case temperature vs. on-state average current
Maximum power consumption (W)
180°
120°
60°
30°
ase temperature (° C)
90°
30°
60°
90°
180°
120°
30°
90°
180°
On-state average current (A)
On-state average current (A)
On-state surge current vs cycles
I
2
t Characteristic
On-state surge current (KA)
I
2
t ( 10
³A²S
)
Cycles @50Hz
Timet (ms)
