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NL27WZ02MU2TCG

Dual 2-Input NOR Gate, 3000-REEL

器件类别:逻辑    逻辑   

厂商名称:ON Semiconductor(安森美)

厂商官网:http://www.onsemi.cn

器件标准:  

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器件参数
参数名称
属性值
Brand Name
ON Semiconductor
是否无铅
不含铅
厂商名称
ON Semiconductor(安森美)
包装说明
VSON, SOLCC8,.04,16
制造商包装代码
517BY
Reach Compliance Code
compliant
Factory Lead Time
43 weeks 1 day
系列
LVC/LCX/Z
JESD-30 代码
R-PDSO-N8
长度
1.6 mm
负载电容(CL)
50 pF
逻辑集成电路类型
NOR GATE
最大I(ol)
0.024 A
湿度敏感等级
1
功能数量
2
输入次数
2
端子数量
8
最高工作温度
125 °C
最低工作温度
-55 °C
封装主体材料
PLASTIC/EPOXY
封装代码
VSON
封装等效代码
SOLCC8,.04,16
封装形状
RECTANGULAR
封装形式
SMALL OUTLINE, VERY THIN PROFILE
包装方法
TR
最大电源电流(ICC)
0.01 mA
Prop。Delay @ Nom-Sup
5.2 ns
传播延迟(tpd)
9.7 ns
施密特触发器
NO
座面最大高度
0.55 mm
最大供电电压 (Vsup)
5.5 V
最小供电电压 (Vsup)
1.65 V
标称供电电压 (Vsup)
3.3 V
表面贴装
YES
技术
CMOS
温度等级
MILITARY
端子形式
NO LEAD
端子节距
0.4 mm
端子位置
DUAL
宽度
1 mm
文档预览
Dual 2-Input NOR Gate
NL27WZ02
The NL27WZ02 is a high performance dual 2−input NOR Gate
operating from a 1.65 V to 5.5 V supply.
Features
Designed for 1.65 V to 5.5 V V
CC
Operation
2.5 ns t
PD
at V
CC
= 5 V (typ)
Inputs/Outputs Overvoltage Tolerant up to 5.5 V
I
OFF
Supports Partial Power Down Protection
Source/Sink 24 mA at 3.0 V
Available in US8, UDFN8 and UQFN8 Packages
Chip Complexity < 100 FETs
NLV Prefix for Automotive and Other Applications Requiring
Unique Site and Control Change Requirements; AEC−Q100
Qualified and PPAP Capable
These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
www.onsemi.com
MARKING
DIAGRAMS
US8
US SUFFIX
CASE 493
XXXX
ALYW
Commercial
UDFN8, 1.95x1.0
MU1 SUFFIX
CASE 517CA
XM
1
A1
B1
A2
B2
≥1
≥1
Y1
Y2
UDFN8, 1.6x1.0
MU2 SUFFIX
CASE 517BY
XM
1
Figure 1. Logic Symbol
UDFN8, 1.45x1.0
MU3 SUFFIX
CASE 517BZ
XM
1
1
XX MG
1
8
UQFN8, 1.6x1.6
MQ1 SUFFIX
CASE 523AN
UQFN8, 1.4x1.2
MQ2 SUFFIX
CASE 523AS
XM
1
X, XX, XXXX
A
L
Y
W
M
G
= Specific Device Code
= Assembly Location
= Lot Code
= Year Code
= Week Code
= Date Code
= Pb−Free Package
ORDERING INFORMATION
See detailed ordering, marking and shipping information in the
package dimensions section on page 6 of this data sheet.
©
Semiconductor Components Industries, LLC, 2011
October, 2020
Rev. 15
1
Publication Order Number:
NL27WZ02/D
NL27WZ02
A1
7
B1
6
Y2
5
A1
1
8
V
CC
A1
1
8
V
CC
B1
2
7
Y1
B1
2
7
Y1
V
CC
8
GND
4
Y2
3
6
B2
Y2
3
6
B2
1
Y1
2
B2
UQFN8
3
A2
GND
4
5
A2
GND
4
5
A2
US8
UDFN8
Figure 2. Pinout
PIN ASSIGNMENT
(US8 / UDFN8)
Pin
1
2
3
4
5
6
7
8
Function
A1
B1
Y2
GND
A2
B2
Y1
V
CC
PIN ASSIGNMENT
(UQFN8)
Pin
1
2
3
4
5
6
7
8
Function
Y1
B2
A2
GND
Y2
B1
A1
V
CC
A
L
L
H
H
FUNCTION TABLE
Inputs
B
L
H
L
H
Output
Y
H
L
L
L
H = HIGH Logic Level
L = LOW Logic Level
www.onsemi.com
2
NL27WZ02
MAXIMUM RATINGS
Symbol
V
CC
V
IN
DC Supply Voltage
DC Input Voltage
DC Output Voltage
Active−Mode (High or Low State)
Tri−State Mode (Note 1)
Power−Down Mode (V
CC
= 0 V)
V
IN
< GND
V
OUT
< GND
Characteristics
Value
−0.5
to +6.5
−0.5
to +6.5
−0.5
to V
CC
+ 0.5
−0.5
to +6.5
−0.5
to +6.5
−50
−50
±50
±100
−65
to +150
260
+150
US8
UQFN8
UDFN8
US8
UQFN8
UDFN8
250
210
231
500
595
541
Level 1
Oxygen Index: 28 to 34
Human Body Model
Charged Device Model
UL 94 V−0 @ 0.125 in
2000
1000
$100
Unit
V
V
V
I
IK
I
OK
I
OUT
I
CC
or I
GND
T
STG
T
L
T
J
q
JA
DC Input Diode Current
DC Output Diode Current
DC Output Source/Sink Current
DC Supply Current per Supply Pin or Ground Pin
Storage Temperature Range
Lead Temperature, 1 mm from Case for 10 secs
Junction Temperature Under Bias
Thermal Resistance (Note 2)
mA
mA
mA
mA
°C
°C
°C
°C/W
P
D
Power Dissipation in Still Air
mW
MSL
F
R
V
ESD
I
Latchup
Moisture Sensitivity
Flammability Rating
ESD Withstand Voltage (Note 3)
Latchup Performance (Note 4)
V
mA
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality
should not be assumed, damage may occur and reliability may be affected.
1. Applicable to devices with outputs that may be tri−stated.
2. Measured with minimum pad spacing on an FR4 board, using 10mm−by−1inch, 2 ounce copper trace no air flow per JESD51−7.
3. HBM tested to ANSI/ESDA/JEDEC JS−001−2017. CDM tested to EIA/JESD22−C101−F. JEDEC recommends that ESD qualification to
EIA/JESD22−A115−A (Machine Model) be discontinued per JEDEC/JEP172A.
4. Tested to EIA/JESD78 Class II.
RECOMMENDED OPERATING CONDITIONS
Symbol
V
CC
V
IN
V
OUT
Positive DC Supply Voltage
DC Input Voltage
DC Output Voltage
Active−Mode (High or Low State)
Tri−State Mode (Note 1)
Power−Down Mode (V
CC
= 0 V)
Characteristics
Min
1.65
0
0
0
0
−55
V
CC
= 1.65 V to 1.95 V
V
CC
= 2.3 V to 2.7 V
V
CC
= 3.0 V to 3.6 V
V
CC
= 4.5 V to 5.5 V
0
0
0
0
Max
5.5
5.5
V
CC
5.5
5.5
+125
20
20
10
5
°C
ns/V
Unit
V
V
T
A
t
r
, t
f
Operating Temperature Range
Input Rise and Fall Time
Functional operation above the stresses listed in the Recommended Operating Ranges is not implied. Extended exposure to stresses beyond
the Recommended Operating Ranges limits may affect device reliability.
www.onsemi.com
3
NL27WZ02
DC ELECTRICAL CHARACTERISTICS
Symbol
V
IH
V
IL
V
OH
Parameter
High−Level Input
Voltage
Low−Level Input
Voltage
High−Level Output
Voltage
V
IN
= V
IH
or V
IL
I
OH
=
−100
mA
I
OH
=
−4
mA
I
OH
=
−8
mA
I
OH
=
−12
mA
I
OH
=
−16
mA
I
OH
=
−24
mA
I
OH
=
−32
mA
V
IN
= V
IH
or V
IL
I
OL
= 100
mA
I
OL
= 4 mA
I
OL
= 8 mA
I
OL
= 12 mA
I
OL
= 16 mA
I
OL
= 24 mA
I
OL
= 32 mA
V
IN
= 5.5 V or GND
V
IN
= 5.5 V or
V
OUT
= 5.5 V
V
IN
= V
CC
or GND
Condition
V
CC
(V)
1.65 to 1.95
2.3 to 5.5
1.65 to 1.95
2.3 to 5.5
1.65 to 5.5
1.65
2.3
2.7
3.0
3.0
4.5
1.65 to 5.5
1.65
2.3
2.7
3.0
3.0
4.5
1.65 to 5.5
0
5.5
T
A
= 255C
Min
0.65 V
CC
0.70 V
CC
V
CC
0.1
1.29
1.9
2.2
2.4
2.3
3.8
Typ
V
CC
1.4
2.1
2.4
2.7
2.5
4.0
0.08
0.2
0.22
0.28
0.38
0.42
Max
0.35 V
CC
0.30 V
CC
0.1
0.24
0.3
0.4
0.4
0.55
0.55
±0.1
1.0
1.0
−555C
3
T
A
3
1255C
Min
0.65 V
CC
0.70 V
CC
V
CC
0.1
1.29
1.9
2.2
2.4
2.3
3.8
Max
0.35 V
CC
0.30 V
CC
0.1
0.24
0.3
0.4
0.4
0.55
0.55
±1.0
10
10
V
V
Units
V
V
OL
Low−Level Output
Voltage
V
I
IN
I
OFF
I
CC
Input Leakage Current
Power Off Leakage
Current
Quiescent Supply
Current
mA
mA
mA
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
Î Î Î Î Î
Î
Î Î Î Î Î
ÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Î
Î
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Î Î Î Î Î
ÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎ
Î Î Î Î Î
Î
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Î
Î
Î Î Î Î Î Î
Î Î Î Î
Î
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Î
Î
Î Î Î Î Î
Î
Î Î Î Î Î Î
Î
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Î
Î
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Î Î Î Î Î
ÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎ
Î Î Î Î Î
Î
Î
Î
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Î
Î
Î
Î
Î Î Î
ÎÎÎ Î Î Î Î Î
Î
Î
Î
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎ Î Î Î
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎ ÎÎÎÎÎÎÎ
Î Î Î Î
Î
Î
Î
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Î
Î
Î
Î
Î
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
AC ELECTRICAL CHARACTERISTICS
Symbol
t
PLH
,
t
PHL
Parameter
T
A
= 25°C
Typ
7.4
3.3
2.6
1.9
3.2
2.5
T
A
=
−55
to 125°C
Min
Max
9.7
5.8
4.3
3.3
5.2
4.0
V
CC
(V)
Test Conditions
Min
Max
9.5
5.4
3.9
3.1
4.8
3.7
Units
ns
Propagation Delay,
(A or B) to Y
1.65 to 1.95
2.3 to 2.7
3.0 to 3.6
4.5 to 5.5
3.0 to 3.6
4.5 to 5.5
C
L
= 15 pF
R
L
= 1 MW
R
1
= Open
C
L
= 50 pF,
R
L
= 500
W,
R
1
= Open
CAPACITIVE CHARACTERISTICS
Symbol
C
IN
C
OUT
C
PD
Parameter
Input Capacitance
Output Capacitance
Condition
V
CC
= 5.5 V, V
IN
= 0 V or V
CC
V
CC
= 5.5 V, V
IN
= 0 V or V
CC
10 MHz, V
CC
= 3.3 V, V
IN
= 0 V or V
CC
10 MHz, V
CC
= 5.5 V, V
IN
= 0 V or V
CC
Typical
2.5
2.5
9
11
Units
pF
pF
pF
Power Dissipation Capacitance
(Note 5)
5. C
PD
is defined as the value of the internal equivalent capacitance which is calculated from the operating current consumption without load.
Average operating current can be obtained by the equation: I
CC(OPR
)
= C
PD

V
CC

f
in
+ I
CC
. C
PD
is used to determine the no−load dynamic
power consumption; P
D
= C
PD

V
CC2

f
in
+ I
CC

V
CC
.
www.onsemi.com
4
NL27WZ02
OPEN
2 x V
CC
R
1
DUT
R
T
R
L
C
L
*
OUTPUT
GND
t
PLH
/ t
PHL
t
PLZ
/ t
PZL
t
PHZ
/ t
PZH
X = Don’t Care
Test
Switch
Position
Open
2 x V
CC
GND
C
L
, pF
R
L
,
W
R
1
,
W
See AC Characteristics Table
50
50
500
500
500
500
C
L
includes probe and jig capacitance
R
T
is Z
OUT
of pulse generator (typically 50
W)
f = 1 MHz
Figure 3. Test Circuit
t
r
= 3 ns
90%
INPUT
10%
t
PHL
OUTPUT
V
mo
V
mi
90%
V
mi
10%
t
PLH
V
mo
V
OL
t
PLH
OUTPUT
V
mo
t
PHL
V
mo
V
OL
V
OH
OUTPUT
t
PZH
t
PHZ
GND
t
PZL
V
OH
OUTPUT
V
mo
V
OL
+ V
Y
V
OL
V
OH
V
OH
V
Y
t
PLZ
t
f
= 3 ns
V
CC
V
CC
INPUT
V
mi
V
mi
GND
~V
CC
V
mo
~0 V
Figure 4. Switching Waveforms
V
mo
, V
V
CC
, V
1.65 to 1.95
2.3 to 2.7
3.0 to 3.6
4.5 to 5.5
V
mi
, V
V
CC
/2
V
CC
/2
V
CC
/2
V
CC
/2
t
PLH
, t
PHL
V
CC
/2
V
CC
/2
V
CC
/2
V
CC
/2
t
PZL
, t
PLZ
, t
PZH
, t
PHZ
V
CC
/2
V
CC
/2
V
CC
/2
V
CC
/2
V
Y
, V
0.15
0.15
0.3
0.3
www.onsemi.com
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参数对比
与NL27WZ02MU2TCG相近的元器件有:NL27WZ02MU1TWG、NL27WZ02MU1TCG、NL27WZ02MU3TCG。描述及对比如下:
型号 NL27WZ02MU2TCG NL27WZ02MU1TWG NL27WZ02MU1TCG NL27WZ02MU3TCG
描述 Dual 2-Input NOR Gate, 3000-REEL Dual 2-Input NOR Gate, 3000-REEL Dual 2-Input NOR Gate, 3000-REEL Dual 2-Input NOR Gate, 3000-REEL
Brand Name ON Semiconductor ON Semiconductor ON Semiconductor ON Semiconductor
是否无铅 不含铅 不含铅 不含铅 不含铅
厂商名称 ON Semiconductor(安森美) ON Semiconductor(安森美) ON Semiconductor(安森美) ON Semiconductor(安森美)
包装说明 VSON, SOLCC8,.04,16 VSON, SOLCC8,.04,20 VSON, SOLCC8,.04,20 VSON, SOLCC8,.04,14
制造商包装代码 517BY 517CA 517CA 517BZ
Reach Compliance Code compliant compliant compliant compliant
Factory Lead Time 43 weeks 1 day 43 weeks 1 day 43 weeks 1 day 43 weeks 1 day
系列 LVC/LCX/Z LVC/LCX/Z LVC/LCX/Z LVC/LCX/Z
JESD-30 代码 R-PDSO-N8 R-PDSO-N8 R-PDSO-N8 R-PDSO-N8
长度 1.6 mm 1.95 mm 1.95 mm 1.45 mm
负载电容(CL) 50 pF 50 pF 50 pF 50 pF
逻辑集成电路类型 NOR GATE NOR GATE NOR GATE NOR GATE
最大I(ol) 0.024 A 0.024 A 0.024 A 0.024 A
功能数量 2 2 2 2
输入次数 2 2 2 2
端子数量 8 8 8 8
最高工作温度 125 °C 125 °C 125 °C 125 °C
最低工作温度 -55 °C -55 °C -55 °C -55 °C
封装主体材料 PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY
封装代码 VSON VSON VSON VSON
封装等效代码 SOLCC8,.04,16 SOLCC8,.04,20 SOLCC8,.04,20 SOLCC8,.04,14
封装形状 RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR
封装形式 SMALL OUTLINE, VERY THIN PROFILE SMALL OUTLINE, VERY THIN PROFILE SMALL OUTLINE, VERY THIN PROFILE SMALL OUTLINE, VERY THIN PROFILE
包装方法 TR TR TR TR
最大电源电流(ICC) 0.01 mA 0.01 mA 0.01 mA 0.01 mA
Prop。Delay @ Nom-Sup 5.2 ns 5.2 ns 5.2 ns 5.2 ns
传播延迟(tpd) 9.7 ns 9.7 ns 9.7 ns 9.7 ns
施密特触发器 NO NO NO NO
座面最大高度 0.55 mm 0.55 mm 0.55 mm 0.55 mm
最大供电电压 (Vsup) 5.5 V 5.5 V 5.5 V 5.5 V
最小供电电压 (Vsup) 1.65 V 1.65 V 1.65 V 1.65 V
标称供电电压 (Vsup) 3.3 V 3.3 V 3.3 V 3.3 V
表面贴装 YES YES YES YES
技术 CMOS CMOS CMOS CMOS
温度等级 MILITARY MILITARY MILITARY MILITARY
端子形式 NO LEAD NO LEAD NO LEAD NO LEAD
端子节距 0.4 mm 0.5 mm 0.5 mm 0.35 mm
端子位置 DUAL DUAL DUAL DUAL
宽度 1 mm 1 mm 1 mm 1 mm
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