NLB-300
0
Typical Applications
• Narrow and Broadband Commercial and
Military Radio Designs
• Linear and Saturated Amplifiers
Product Description
The NLB-300 cascadable broadband InGaP/GaAs MMIC
amplifier is a low-cost, high-performance solution for gen-
eral purpose RF and microwave amplification needs. This
50Ω gain block is based on a reliable HBT proprietary
MMIC design, providing unsurpassed performance for
small-signal applications. Designed with an external bias
resistor, the NLB-300 provides flexibility and stability. The
NLB-300 is packaged in a low-cost, surface-mount plastic
package, providing ease of assembly for high-volume
tape-and-reel requirements.
Symbol
CASCADABLE BROADBAND
GaAs MMIC AMPLIFIER DC TO 10GHz
• Gain Stage or Driver Amplifiers for
MWRadio/Optical Designs (PTP/PMP/
LMDS/UNII/VSAT/WLAN/Cellular/DWDM)
B
MILLIMETERS
Min.
Nom.
Max.
Min.
INCHES
Nom. Max.
D
4M
A
C
N5
1
2
3
4
5
A
B
C
D
E
F
G
H
J
K
L
M
N
0.535 REF.
2.39 2.54 2.69
0.436 0.510 0.586
2.19 2.34 2.49
1.91 2.16 2.41
1.32 1.52 1.72
0.10 0.15 0.20
0.535 0.660 0.785
0.05 0.10 0.15
0.65 0.75 0.85
0.85 0.95 1.05
4.53 4.68 4.83
4.73 4.88 5.03
0.021 REF.
0.094 0.100 0.106
0.017 0.020 0.023
0.086 0.092 0.098
0.075 0.085 0.095
0.052 0.060 0.068
0.004 0.006 0.008
0.021 0.026 0.031
0.002 0.004 0.006
0.025 0.029 0.033
0.033 0.037 0.041
0.178 0.184 0.190
0.186 0.192 0.198
E
6
0.08 S
Seating Plane
NOTE: All dimensions are in millimeters, and
the dimensions in inches are for reference only.
F
1J
G
2
H
Gauge Plane
S
0.1
L3
Kx3
Optimum Technology Matching® Applied
Si BJT
Si Bi-CMOS
InGaP/HBT
GaAs HBT
SiGe HBT
GaN HEMT
GaAs MESFET
Si CMOS
SiGe Bi-CMOS
Package Style: Micro-X, 4-Pin, Plastic
Features
• Reliable, Low-Cost HBT Design
• 13.0dB Gain, +11.1dBm P1dB@2GHz
• High P1dB of +14.1dBm@6.0GHz and
GND
4
MARKING - N3
+12.7dBm@10.0GHz
• Single Power Supply Operation
• 50Ω I/O Matched for High Freq. Use
RF IN 1
3 RF OUT
Ordering Information
2
GND
Cascadable Broadband GaAs MMIC Amplifier DC to
10GHz
NLB-300-T1 or -T3Tape & Reel, 1000 or 3000 Pieces (respectively)
NLB-300-E
Fully Assembled Evaluation Board
NBB-X-K1
Extended Frequency InGaP Amp Designer’s Tool Kit
RF Micro Devices, Inc.
Tel (336) 664 1233
7628 Thorndike Road
Fax (336) 664 0454
Greensboro, NC 27409, USA
http://www.rfmd.com
NLB-300
Functional Block Diagram
Rev A7 040409
4-131
NLB-300
Absolute Maximum Ratings
Parameter
RF Input Power
Power Dissipation
Device Current
Channel Temperature
Operating Temperature
Storage Temperature
Rating
+20
300
70
200
-45 to +85
-65 to +150
Unit
dBm
mW
mA
°C
°C
°C
Caution!
ESD sensitive device.
RF Micro Devices believes the furnished information is correct and accurate
at the time of this printing. However, RF Micro Devices reserves the right to
make changes to its products without notice. RF Micro Devices does not
assume responsibility for the use of the described product(s).
Exceeding any one or a combination of these limits may cause permanent damage.
Parameter
Overall
Small Signal Power Gain, S21
Specification
Min.
Typ.
Max.
12.0
13.0
10.7
8.9
8.9
8.5
±0.1
2.2:1
2.8:1
2.0:1
2.2:1
2.9:1
2.4:1
11.1
14.1
12.7
4.9
+28.6
+27.0
-16
3.8
-0.0015
Unit
dB
dB
dB
dB
dB
dB
Condition
V
D
=+3.8V, I
CC
=50mA, Z
0
=50Ω, T
A
=+25°C
f=0.1GHz to 1.0GHz
f=1.0GHz to 4.0GHz
f=4.0GHz to 6.0GHz
f=6.0GHz to 10.0GHz
f=10.0GHz to 12.0GHz
f=5.0GHz to 10.0GHz
f=0.1GHz to 4.0GHz
f=4.0GHz to 7.0GHz
f=7.0GHz to 12.0GHz
f=0.1GHz to 4.0GHz
f=4.0GHz to 7.0GHz
f=7.0GHz to 12.0GHz
f=2.0GHz
f=6.0GHz
f=10.0GHz
f=3.0GHz
f=2.0GHz
f=6.0GHz
f=0.1GHz to 20.0GHz
8.5
Gain Flatness, GF
Input VSWR
Output VSWR
Output Power @
-1dB Compression, P1dB
Noise Figure, NF
Third Order Intercept, IP3
Reverse Isolation, S12
Device Voltage, V
D
Gain Temperature Coefficient,
δG
T
/δT
dBm
dBm
dBm
dB
dBm
dB
V
dB/°C
3.6
4.2
MTTF versus Temperature
@ I
CC
=50mA
Case Temperature
Junction Temperature
MTTF
85
113
>1,000,000
147
°C
°C
hours
°C/W
Thermal Resistance
θ
JC
J
T
–
T
CASE
-------------------------- =
θ
JC
( °C ⁄
Watt
)
-
V
D
⋅
I
CC
4-132
Rev A7 040409
NLB-300
Pin
1
Function
RF IN
Description
RF input pin. This pin is NOT internally DC-blocked. A DC-blocking
capacitor, suitable for the frequency of operation, should be used in
most applications. DC coupling of the input is not allowed, because this
will override the internal feedback loop and cause temperature instabil-
ity.
Ground connection. For best performance, keep traces physically short
and connect immediately to ground plane.
RF output and bias pin. Biasing is accomplished with an external series
resistor and choke inductor to V
CC
. The resistor is selected to set the
DC current into this pin to a desired level. The resistor value is deter-
mined by the following equation:
Interface Schematic
2
3
GND
RF OUT
RF OUT
(
V
CC
–
V
DEVICE
)
-
R
= ------------------------------------------
I
CC
RF IN
4
GND
Care should also be taken in the resistor selection to ensure that the
current into the part never exceeds maximum datasheet operating cur-
rent over the planned operating temperature. This means that a resistor
between the supply and this pin is always required, even if a supply
near 5.0V is available, to provide DC feedback to prevent thermal run-
away. Because DC is present on this pin, a DC-blocking capacitor, suit-
able for the frequency of operation, should be used in most
applications. The supply side of the bias network should also be well
bypassed.
Same as pin 2.
Rev A7 040409
4-133
NLB-300
Typical Bias Configuration
Application notes related to biasing circuit, device footprint, and thermal considerations are available on request.
V
CC
R
CC
4
In
1
C block
2
3
L choke
(optional)
Out
C block
V
DEVICE
Recommended Bias Resistor Values
Supply Voltage, V
CC
(V)
Bias Resistor, R
CC
(Ω)
5
22
8
82
10
122
12
162
15
222
20
322
4-134
Rev A7 040409
NLB-300
Extended Frequency InGaP Amplifier Designer’s Tool Kit
NBB-X-K1
This tool kit was created to assist in the design-in of the RFMD NBB- and NLB-series InGap HBT gain block amplifiers.
Each tool kit contains the following.
•
•
•
•
5 each NBB-300, NBB-310 and NBB-400 Ceramic Micro-X Amplifiers
5 each NLB-300, NLB-310 and NLB-400 Plastic Micro-X Amplifiers
2 Broadband Evaluation Boards and High Frequency SMA Connectors
Broadband Bias Instructions and Specification Summary Index for ease of operation
Rev A7 040409
4-135
