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NLU1G07BMX1TCG

Buffers u0026 Line Drivers SGL N-IVT BUFR OD

器件类别:逻辑    逻辑   

厂商名称:ON Semiconductor(安森美)

厂商官网:http://www.onsemi.cn

器件标准:

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器件参数
参数名称
属性值
是否无铅
不含铅
是否Rohs认证
符合
厂商名称
ON Semiconductor(安森美)
零件包装代码
SOIC
包装说明
VSON, SOLCC6,.04,16
针数
6
Reach Compliance Code
unknown
系列
1G
JESD-30 代码
R-PDSO-N6
JESD-609代码
e4
长度
1.2 mm
负载电容(CL)
50 pF
逻辑集成电路类型
BUFFER
最大I(ol)
0.004 A
湿度敏感等级
1
功能数量
1
输入次数
1
端子数量
6
最高工作温度
125 °C
最低工作温度
-55 °C
输出特性
OPEN-DRAIN
封装主体材料
PLASTIC/EPOXY
封装代码
VSON
封装等效代码
SOLCC6,.04,16
封装形状
RECTANGULAR
封装形式
SMALL OUTLINE, VERY THIN PROFILE
包装方法
TAPE AND REEL
峰值回流温度(摄氏度)
NOT SPECIFIED
电源
1.8/5 V
Prop。Delay @ Nom-Sup
14.5 ns
传播延迟(tpd)
14.5 ns
认证状态
Not Qualified
施密特触发器
NO
座面最大高度
0.4 mm
最大供电电压 (Vsup)
5.5 V
最小供电电压 (Vsup)
1.65 V
标称供电电压 (Vsup)
5 V
表面贴装
YES
技术
CMOS
温度等级
MILITARY
端子面层
Nickel/Palladium/Gold (Ni/Pd/Au)
端子形式
NO LEAD
端子节距
0.4 mm
端子位置
DUAL
处于峰值回流温度下的最长时间
NOT SPECIFIED
宽度
1 mm
文档预览
NLU1G07
Single Non-Inverting Buffer
with Open Drain Output
The NLU1G07 MiniGatet is an advanced high−speed CMOS
non−inverting buffer with open drain output in ultra−small footprint.
The NLU1G07 input and output structures provide protection when
voltages up to 7.0 V are applied, regardless of the supply voltage.
Features
http://onsemi.com
MARKING
DIAGRAMS
UDFN6
MU SUFFIX
CASE 517AA
JM
High Speed: t
PD
= 3.8 ns (Typ) @ V
CC
= 5.0 V
Low Power Dissipation: I
CC
= 1
mA
(Max) at T
A
= 25°C
Power Down Protection Provided on inputs
Balanced Propagation Delays
Overvoltage Tolerant (OVT) Input and Output Pins
Ultra−Small Packages
These are Pb−Free Devices
1
1
NC
1
OVT
IN A
2
5
NC
6
V
CC
1
ULLGA6
1.0 x 1.0
CASE 613AD
JM
ULLGA6
1.2 x 1.0
CASE 613AE
JM
GND
3
4
OUT Y
1
ULLGA6
1.45 x 1.0
CASE 613AF
JM
Figure 1. Pinout
(Top View)
1
IN A
1
OUT Y
1
J
M
UDFN6
1.0 x 1.0
CASE 517BX
XM
UDFN6
1.45 x 1.0
CASE 517AQ
XM
Figure 2. Logic Symbol
PIN ASSIGNMENT
1
2
3
4
5
6
NC
IN A
GND
OUT Y
NC
V
CC
= Device Marking
= Date Code
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 4 of this data sheet.
FUNCTION TABLE
A
L
H
Y
L
Z
©
Semiconductor Components Industries, LLC, 2012
July, 2012
Rev. 3
1
Publication Order Number:
NLU1G07/D
NLU1G07
MAXIMUM RATINGS
Symbol
V
CC
V
IN
V
OUT
I
IK
I
OK
I
O
I
CC
I
GND
T
STG
T
L
T
J
MSL
F
R
V
ESD
DC Supply Voltage
DC Input Voltage
DC Output Voltage
DC Input Diode Current
DC Output Diode Current
DC Output Source/Sink Current
DC Supply Current Per Supply Pin
DC Ground Current per Ground Pin
Storage Temperature Range
Lead Temperature, 1 mm from Case for 10 Seconds
Junction Temperature Under Bias
Moisture Sensitivity
Flammability Rating
ESD Withstand Voltage
Oxygen Index: 28 to 34
Human Body Model (Note 2)
Machine Model (Note 3)
Charged Device Model (Note 4)
V
IN
< GND
V
OUT
< GND
Parameter
Value
−0.5
to +7.0
−0.5
to +7.0
−0.5
to +7.0
−20
±20
±12.5
±25
±25
−65
to +150
260
150
Level 1
UL 94 V−0 @ 0.125 in
> 2000
> 200
N/A
±500
V
Unit
V
V
V
mA
mA
mA
mA
mA
°C
°C
°C
I
LATCHUP
Latchup Performance Above V
CC
and Below GND at 125°C (Note 5)
mA
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the
Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect
device reliability.
1. Measured with minimum pad spacing on an FR4 board, using 10 mm−by−1 inch, 2 ounce copper trace no air flow.
2. Tested to EIA / JESD22−A114−A.
3. Tested to EIA / JESD22−A115−A.
4. Tested to JESD22−C101−A.
5. Tested to EIA / JESD78.
RECOMMENDED OPERATING CONDITIONS
Symbol
V
CC
V
IN
V
OUT
T
A
Dt/DV
Positive DC Supply Voltage
Digital Input Voltage
Output Voltage
Operating Free−Air Temperature
Input Transition Rise or Fall Rate
V
CC
= 3.3 V
±
0.3 V
V
CC
= 5.0 V
±
0.5 V
Parameter
Min
1.65
0
0
−55
0
0
Max
5.5
5.5
5.5
+125
100
20
Unit
V
V
V
°C
ns/V
http://onsemi.com
2
NLU1G07
DC ELECTRICAL CHARACTERISTICS
V
CC
(V)
1.65
2.3 to
5.5
V
IL
Low−Level Input
Voltage
1.65
2.3 to
5.5
V
OL
Low−Level
Output Voltage
V
IN
= V
IH
or V
IL
I
OL
= 50
mA
V
IN
= V
IH
or V
IL
I
OL
= 4 mA
I
OL
= 8 mA
I
LKG
I
IN
I
OFF
I
CC
Z−State Output
Leakage Current
Input Leakage
Current
Power off Input
Leakage Current
Quiescent Supply
Current
V
IN
= V
IH
, V
OUT
= V
CC
or GND
0 = V
IN
= 5.5 V
0
v
V
IN
,
V
OUT
= 5.5 V
0
v
V
IN
v
V
CC
2.0
3.0
4.5
3.0
4.5
5.5
0 to
5.5
0.0
5.5
0
0
0
T
A
= 25
5C
Min
0.75 x
V
CC
0.70 x
V
CC
0.25 x
V
CC
0.30 x
V
CC
0.1
0.1
0.1
0.36
0.36
±0.25
±0.1
0.25
1.0
Typ
Max
T
A
=
+855C
Min
0.75 x
V
CC
0.70 x
V
CC
0.25 x
V
CC
0.30 x
V
CC
0.1
0.1
0.1
0.44
0.44
±2.5
±1.0
2.5
20
0.25 x
V
CC
0.30 x
V
CC
0.1
0.1
0.1
0.52
0.52
±5.0
±1.0
5
40
mA
mA
mA
mA
V
V
Max
T
A
=
−555C
to +1255C
Min
Max
Unit
V
Symbol
V
IH
Parameter
Low−Level Input
Voltage
Conditions
AC ELECTRICAL CHARACTERISTICS
(Input t
r
= t
f
= 3.0 ns)
V
CC
(V)
3.0 to
3.6
T
A
= 25
5C
Test Condition
R
L
= R
1
= 50
W,
C
L
= 15 pF
R
L
= R
1
= 50
W,
C
L
= 50 pF
4.5 to
5.5
R
L
= R
1
= 50
W,
C
L
= 15 pF
R
L
= R
1
= 50
W,
C
L
= 50 pF
t
PLZ
Output Disable
Time
3.0 to
3.6
4.5 to
5.5
C
IN
C
PD
Input Capacitance
Power Dissipation
Capacitance
(Note 6)
5.0
R
L
= R
1
= 50
W,
C
L
= 50 pF
R
L
= R
1
= 50
W,
C
L
= 50 pF
Min
Typ
5.0
7.5
3.8
5.3
7.5
5.3
4
18
Max
7.1
10.6
5.5
7.5
10.6
7.5
10
T
A
=
+855C
Min
Max
8.5
12.0
6.5
8.5
12.0
8.5
10
T
A
=
−555C
to +1255C
Min
Max
10.0
14.5
8.0
10.0
14.5
10.0
10.0
pF
pF
ns
Unit
ns
Symbol
t
PZL
Parameter
Output Enable
Time, Input A to
Output Y
6. C
PD
is defined as the value of the internal equivalent capacitance which is calculated from the dynamic operating current consumption without
load. Average operating current can be obtained by the equation I
CC(OPR)
= C
PD
V
CC
f
in
+ I
CC
. C
PD
is used to determine the no−load
dynamic power consumption: P
D
= C
PD
V
CC2
f
in
+ I
CC
V
CC.
http://onsemi.com
3
NLU1G07
V
CC
A
50%
t
PZL
Y
50% V
CC
t
PLZ
V
CC
GND
HIGH
IMPEDANCE
V
OL
)
0.3 V
*Includes jig and probe capacitance.
R
L
= R
1
= 500
W
A
C
L
*
R
L
2
R
1
Figure 3. Switching Waveforms
Figure 4. Test Circuit
V
CC
OVT
1.5 V to 7 V
R
L
A
Figure 5. Output Voltage Mismatch Application
ORDERING INFORMATION
Device
NLU1G07MUTCG
NLU1G07AMX1TCG
NLU1G07BMX1TCG
NLU1G07CMX1TCG
NLU1G07AMUTCG
NLU1G07CMUTCG
Package
UDFN6, 1.2 x 1.0, 0.4P
(Pb−Free)
ULLGA6, 1.45 x 1.0, 0.5P
(Pb−Free)
ULLGA6, 1.2 x 1.0, 0.4P
(Pb−Free)
ULLGA6, 1.0 x 1.0, 0.35P
(Pb−Free)
UDFN6, 1.45 x 1.0, 0.5P
(Pb−Free)
UDFN6, 1.0 x 1.0, 0.35P
(Pb−Free)
Shipping
3000 / Tape & Reel
3000 / Tape & Reel
3000 / Tape & Reel
3000 / Tape & Reel
3000 / Tape & Reel
3000 / Tape & Reel
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
http://onsemi.com
4
NLU1G07
PACKAGE DIMENSIONS
UDFN6 1.45x1.0, 0.5P
CASE 517AQ
ISSUE O
D
A
B
L1
PIN ONE
REFERENCE
L
L
E
OPTIONAL
CONSTRUCTIONS
DETAIL A
NOTES:
1. DIMENSIONING AND TOLERANCING PER
ASME Y14.5M, 1994.
2. CONTROLLING DIMENSION: MILLIMETERS.
3. DIMENSION b APPLIES TO PLATED TERMINAL
AND IS MEASURED BETWEEN 0.15 AND
0.30 mm FROM THE TERMINAL TIP.
DIM
A
A1
A2
b
D
E
e
L
L1
MILLIMETERS
MIN
MAX
0.45
0.55
0.00
0.05
0.07 REF
0.20
0.30
1.45 BSC
1.00 BSC
0.50 BSC
0.30
0.40
−−−
0.15
0.10 C
0.10 C
DETAIL B
0.05 C
6X
A
A1
SIDE VIEW
e
1
3
OPTIONAL
CONSTRUCTIONS
0.05 C
A2
C
SEATING
PLANE
6X
L
DETAIL A
6
4
6X
b
0.10 C A B
0.05 C
NOTE 3
BOTTOM VIEW
http://onsemi.com
5
ÉÉ
ÉÉ
ÉÉÉ
ÉÉÉ
TOP VIEW
EXPOSED Cu
MOLD CMPD
DETAIL B
MOUNTING FOOTPRINT
PACKAGE
OUTLINE
0.30
6X
1.24
0.53
6X
1
0.50
PITCH
DIMENSIONS: MILLIMETERS
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
查看更多>
参数对比
与NLU1G07BMX1TCG相近的元器件有:NLU1G07CMX1TCG。描述及对比如下:
型号 NLU1G07BMX1TCG NLU1G07CMX1TCG
描述 Buffers u0026 Line Drivers SGL N-IVT BUFR OD Buffers u0026 Line Drivers SGL N-IVT BUFR OD
是否无铅 不含铅 不含铅
是否Rohs认证 符合 符合
厂商名称 ON Semiconductor(安森美) ON Semiconductor(安森美)
零件包装代码 SOIC SOIC
包装说明 VSON, SOLCC6,.04,16 VSON, SOLCC6,.04,14
针数 6 6
Reach Compliance Code unknown unknown
系列 1G 1G
JESD-30 代码 R-PDSO-N6 S-PDSO-N6
JESD-609代码 e4 e4
长度 1.2 mm 1 mm
负载电容(CL) 50 pF 50 pF
逻辑集成电路类型 BUFFER BUFFER
最大I(ol) 0.004 A 0.004 A
湿度敏感等级 1 1
功能数量 1 1
输入次数 1 1
端子数量 6 6
最高工作温度 125 °C 125 °C
最低工作温度 -55 °C -55 °C
输出特性 OPEN-DRAIN OPEN-DRAIN
封装主体材料 PLASTIC/EPOXY PLASTIC/EPOXY
封装代码 VSON VSON
封装等效代码 SOLCC6,.04,16 SOLCC6,.04,14
封装形状 RECTANGULAR SQUARE
封装形式 SMALL OUTLINE, VERY THIN PROFILE SMALL OUTLINE, VERY THIN PROFILE
包装方法 TAPE AND REEL TAPE AND REEL
峰值回流温度(摄氏度) NOT SPECIFIED NOT SPECIFIED
电源 1.8/5 V 1.8/5 V
Prop。Delay @ Nom-Sup 14.5 ns 14.5 ns
传播延迟(tpd) 14.5 ns 14.5 ns
认证状态 Not Qualified Not Qualified
施密特触发器 NO NO
座面最大高度 0.4 mm 0.4 mm
最大供电电压 (Vsup) 5.5 V 5.5 V
最小供电电压 (Vsup) 1.65 V 1.65 V
标称供电电压 (Vsup) 5 V 5 V
表面贴装 YES YES
技术 CMOS CMOS
温度等级 MILITARY MILITARY
端子面层 Nickel/Palladium/Gold (Ni/Pd/Au) Nickel/Palladium/Gold (Ni/Pd/Au)
端子形式 NO LEAD NO LEAD
端子节距 0.4 mm 0.35 mm
端子位置 DUAL DUAL
处于峰值回流温度下的最长时间 NOT SPECIFIED NOT SPECIFIED
宽度 1 mm 1 mm
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