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NM29A040 080 4-Mbit 8-Mbit CMOS Serial FLASH E

PROM

February 1996

NM29A040 080

4-Mbit 8-Mbit CMOS Serial FLASH E

PROM

General Description

The NM29A040 080 are 4-Mbit and 8-Mbit Flash memories

designed with a MICROWIRE

serial interface All of the

features of the device are designed to provide the most cost

effective solution for applications requiring low bandwidth

file storage Examples of these applications include digital

answering machines and personal digital recorders (digital

audio) or FAX and digital scanners (digital imaging) The

Serial Flash requires only a single 5V power supply has a

small erase block size (4 kbytes) and a low EMI serial inter-

face

The NM29A040 080 have been designed to work seam-

lessly with National’s CompactRISC

family (e g

NSAM266) of processors In this manner National is able to

provide the complete system solution to digital audio re-

cording (processor CODEC Flash memory software) or

digital imaging

Features

Single 5V

10% power supply

4 kbyte erase block

Organized as 128 (256) Blocks per 4-Mbit (8-Mbit)

Device

128 pages per block

32 bytes per page (256 bits)

MICROWIRE

compatible interface

Low operating current (typical)

5 mA read current

15 mA write current

10 mA erase current

standby current

100k write erase cycle endurance

Offered in PLCC and SOIC packages

Block Diagram

TL D 12475 – 1

TRI-STATE is a registered trademark of National Semiconductor Corporation

MICROWIRE

SpeechPro

CompactRISC

and CompactSPEECH

are trademarks of National Semiconductor Corporation

1996 National Semiconductor Corporation

TL D 12475

RRD-B30M36 Printed in U S A

http

www national com

Connection Diagrams

Plastic Chip Carrier (V)

Ordering Information

Commercial Temperature Range (0 C to

70 C)

Order Number

NM29A040V

NM29A040M

NM29A080V

NM29A080M

Extended Temp Range (

40 C to

85 C)

Order Number

NM29A040EV

NM29A040EM

NM29A080EV

NM29A080EM

TL D 12475– 2

NM29A040V

NS Package Number V28A

Pin Functions

SERIAL DATA INPUT DI

The DI pin is used for transferring in commands and data

Data is latched on the rising edge of SK

SERIAL DATA OUT DO

The DO pin is used for transferring out status and data Data

output will change following the falling edge of SK

CHIP SELECT CS

This signal indicates which device is selected When this

signal is inactive the device ignores SK This signal can be

tied to ground when there is only one Serial Flash device

The CS pin may be pulled high to reset command input

SERIAL DATA CLOCK SK

This is the standard synchronous MICROWIRE clock which

determines the rate of data transfer On each toggle one

data bit is shifted into or out of the Serial Flash

Small Outline Package (M)

TL D 12475– 3

NM29A040M

NM29A080M

NS Package Number MA28A

Pin Assignments

Serial Data Output

Serial Data Input

Serial Data Clock

Chip Select

TL D 12475 – 22

No Connection

NM29A080V

NS Package Number VA32A

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www national com

System Concepts

The NM29A040 080 are 4-Mbit and 8-Mbit NAND Flash de-

signed to provide the most cost effective solution for file

storage applications These applications include digital au-

dio recording digital image storage and data logging appli-

cations

For digital audio storage the NM29A040 080 have been

matched with National’s NSAM266 voice processor Appli-

cations that can benefit from this combination include digital

answering machines personal digital recorders pagers and

voicemail systems When combined with National Semicon-

ductor’s CompactSPEECH

embedded software and the

NSAM266 processor customers can quickly bring to market

systems capable of recording up to 15 minutes of audio on

a single 4 Mb device Multiple NM29A040 080’s can be

used to extend the record time up to 2 hours

Digital imaging applications include FAX machines hand-

held scanners and digital cameras Combining the

NM29A040 080 with the CompactRISC family of embedded

processors can enable complete solutions for image stor-

age

Data logging applications can take advantage of the

NM29A040 080’s simple interface and nonvolatility to allow

simple 8-bit microcontroller based systems to have access

to over 4 Mb of storage The nonvolatility ensures data in-

tegrity in remote battery powered applications

TL D 12475 – 4

FIGURE 1 Digital Audio Recording Solution

TABLE I Data Transfer Rates

Transfer Rates

Page

Read

Write

Erase

1 02 Mbits s

(127 5 kbytes s)

406 3 kbits s

(50 8 kbytes s)

Block

2 61 Mbits s

(325 8 kbytes s)

536 4 kbits s

(67 1 kbytes s)

Total Time

Page

251

630

Block

12 6 ms

61 1 ms

6 ms

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Device Operation

The basic functions required for storing messages or im-

ages on the NM29A040 080 are Page Read Page Write

and Block Erase These functions can be implemented by

combining the different instructions for the NM29A040 080

in the following sequences

PAGE READ

Page Read will read out the 32 bytes of a page for the

specified address To continue reading the page at the next

address an Increment command (90H) can be issued In

this way the system can avoid repeatedly using the three

byte Set-Address command The Increment command is

then followed by the Read command and proceeds in the

same manner as shown in

Figure 2

PAGE WRITE

Page Write sequence will write up to 32 bytes into a speci-

fied page Like the Page Read sequence the Increment

command can be used to quickly set the address to the next

page for writing data sequentially into a block

TL D 12475 – 6

FIGURE 3 Page Write Sequence

TL D 12475–5

FIGURE 2 Page Read Sequence

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Device Operation

(Continued)

BLOCK ERASE

The Block Erase sequence erases a specified block (4 kB)

of data Flash memory devices require that a block be in an

erased state prior to writing to a memory cell In this man-

ner a block must be erased prior to the recording of any

messages or storage of any images

reading out the same page the first bit shifted in will be the

first bit shifted out If for example only 5 bytes are shifted in

written to the array and then the same page is read out 27

bytes should be shifted out before the original 5 bytes will

be shifted out See Note 4 in the notifications section for an

explanation of multiple page writes and masking

TL D 12475 – 9

FIGURE 6 Block Organization

WRITE ONCE BLOCK

The NM29A040 contains 127 blocks (blocks 0 thru block

126) which are fully accessible to the user for reading writ-

ing and erasing The final block number 127 has been set

aslde as a write once block The pages in this block may

only be written to once Once the data is written it may not

be erased In this manner block 127 may be used for stor-

ing system configuration information that cannot be lost

The NM29A080 operates in a similar manner but has 253

blocks that are fully accessible Block 254 contains the un-

usable block information although this block has 256 pages

as opposed to the standard 128 pages

The last block is not accessible through the normal Read

and Write commands Special commands for Read (D0H)

and Write (F0H) are used to perform the last block opera-

tions An erase operation is not available or usable on the

last block

DATA REGISTER

The data register is a 32-byte FIFO that is used to shift data

into or out of the device When a write operation is per-

formed all 32 bytes are written to the currently addressed

page Refer to Note 4 for how to write less than 32 bytes to

a page

The data register may be used as an on-chip holding area

for partial page data For example if data is acquired exter-

nally in 8-byte multiples the data register can be used to

hold each 8-byte segment After the 4th such data segment

an entire page of data will have been accumulated at which

point the write command mat be issued No data may be

shifted into or out of the data register while the device is

busy

READY BUSY OUTPUT

When the Serial Flash device is selected with CS held low

then the DO pin reflects the Ready Busy state of the de-

vice This is true at all times except when reading data out

of the device as in the Get-Status command or the Data-

Shift-Out command When the device is unselected the DO

output is in a high impedance state

TL D 12475 – 7

FIGURE 4 Block Erase Sequence

Functional Description

ORGANIZATION

The NM29A040 080 are 4-Mbit and 8-Mbit devices respec-

tively organized as 128 256 blocks of 128 pages A block is

the smallest unit that can be erased and is 4 kbytes in size

Within a block are 16 rows of 8 pages each row 256 bytes

long Each page is 32 bytes long Read and write operations

always operate on a page at a time

TL D 12475 – 8

FIGURE 5 Device Organization

Reading or writing data to the Serial Flash involves clocking

data into or out of the data register The data register is a

32-byte wide shift register equivalent in size to one page

When shifting in a full page writing to the array and then

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参数对比

与NM29A080EM相近的元器件有：NM29A040、NM29A040EV、NM29A040V、NM29A080、NM29A080EV、NM29A080V、NM29A080M、NM29A040M、NM29A040EM。描述及对比如下：

型号	NM29A080EM	NM29A040	NM29A040EV	NM29A040V	NM29A080	NM29A080EV	NM29A080V	NM29A080M	NM29A040M	NM29A040EM
描述	4-Mbit/8-Mbit CMOS Serial FLASH E2PROM	4-Mbit/8-Mbit CMOS Serial FLASH E2PROM	4-Mbit/8-Mbit CMOS Serial FLASH E2PROM	4-Mbit/8-Mbit CMOS Serial FLASH E2PROM	4-Mbit/8-Mbit CMOS Serial FLASH E2PROM	4-Mbit/8-Mbit CMOS Serial FLASH E2PROM	4-Mbit/8-Mbit CMOS Serial FLASH E2PROM	4-Mbit/8-Mbit CMOS Serial FLASH E2PROM	4-Mbit/8-Mbit CMOS Serial FLASH E2PROM	4-Mbit/8-Mbit CMOS Serial FLASH E2PROM
是否Rohs认证	不符合	-	不符合	不符合	-	不符合	不符合	不符合	不符合	不符合
包装说明	0.350 INCH, PLASTIC, SOIC-28	-	PLASTIC, LCC-28	PLASTIC, LCC-28	-	PLASTIC, LCC-32	PLASTIC, LCC-32	0.350 INCH, PLASTIC, SOIC-28	0.350 INCH, PLASTIC, SOIC-28	0.350 INCH, PLASTIC, SOIC-28
Reach Compliance Code	unknow	-	unknow	unknow	-	unknow	unknow	unknow	unknow	unknow
ECCN代码	EAR99	-	EAR99	EAR99	-	EAR99	EAR99	EAR99	EAR99	EAR99
Is Samacsys	N	-	N	N	-	N	N	N	N	N
最大时钟频率 (fCLK)	4 MHz	-	4 MHz	4 MHz	-	4 MHz	4 MHz	4 MHz	4 MHz	4 MHz
耐久性	100000 Write/Erase Cycles	-	100000 Write/Erase Cycles	100000 Write/Erase Cycles	-	100000 Write/Erase Cycles	100000 Write/Erase Cycles	100000 Write/Erase Cycles	100000 Write/Erase Cycles	100000 Write/Erase Cycles
JESD-30 代码	R-PDSO-G28	-	S-PQCC-J28	S-PQCC-J28	-	S-PQCC-J32	S-PQCC-J32	R-PDSO-G28	R-PDSO-G28	R-PDSO-G28
JESD-609代码	e0	-	e0	e0	-	e0	e0	e0	e0	e0
长度	18.14 mm	-	11.43 mm	11.43 mm	-	13.97 mm	13.97 mm	18.14 mm	18.14 mm	18.14 mm
内存密度	8388608 bi	-	4194304 bi	4194304 bi	-	8388608 bi	8388608 bi	8388608 bi	4194304 bi	4194304 bi
内存集成电路类型	FLASH	-	FLASH	FLASH	-	FLASH	FLASH	FLASH	FLASH	FLASH
内存宽度	1	-	1	1	-	1	1	1	1	1
功能数量	1	-	1	1	-	1	1	1	1	1
端子数量	28	-	28	28	-	32	32	28	28	28
字数	8388608 words	-	4194304 words	4194304 words	-	8388608 words	8388608 words	8388608 words	4194304 words	4194304 words
字数代码	8000000	-	4000000	4000000	-	8000000	8000000	8000000	4000000	4000000
工作模式	SYNCHRONOUS	-	SYNCHRONOUS	SYNCHRONOUS	-	SYNCHRONOUS	SYNCHRONOUS	SYNCHRONOUS	SYNCHRONOUS	SYNCHRONOUS
最高工作温度	85 °C	-	85 °C	70 °C	-	85 °C	70 °C	70 °C	70 °C	85 °C
组织	8MX1	-	4MX1	4MX1	-	8MX1	8MX1	8MX1	4MX1	4MX1
输出特性	3-STATE	-	3-STATE	3-STATE	-	3-STATE	3-STATE	3-STATE	3-STATE	3-STATE
封装主体材料	PLASTIC/EPOXY	-	PLASTIC/EPOXY	PLASTIC/EPOXY	-	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY
封装代码	SOP	-	QCCJ	QCCJ	-	QCCJ	QCCJ	SOP	SOP	SOP
封装等效代码	SOP28,.5	-	LDCC28,.5SQ	LDCC28,.5SQ	-	LDCC32,.5X.6	LDCC32,.5X.6	SOP28,.5	SOP28,.5	SOP28,.5
封装形状	RECTANGULAR	-	SQUARE	SQUARE	-	SQUARE	SQUARE	RECTANGULAR	RECTANGULAR	RECTANGULAR
封装形式	SMALL OUTLINE	-	CHIP CARRIER	CHIP CARRIER	-	CHIP CARRIER	CHIP CARRIER	SMALL OUTLINE	SMALL OUTLINE	SMALL OUTLINE
并行/串行	SERIAL	-	SERIAL	SERIAL	-	SERIAL	SERIAL	SERIAL	SERIAL	SERIAL
峰值回流温度（摄氏度）	NOT SPECIFIED	-	NOT SPECIFIED	NOT SPECIFIED	-	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED
电源	5 V	-	5 V	5 V	-	5 V	5 V	5 V	5 V	5 V
编程电压	5 V	-	5 V	5 V	-	5 V	5 V	5 V	5 V	5 V
认证状态	Not Qualified	-	Not Qualified	Not Qualified	-	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified
座面最大高度	2.53 mm	-	4.57 mm	4.57 mm	-	3.55 mm	3.55 mm	2.53 mm	2.53 mm	2.53 mm
串行总线类型	MICROWIRE	-	MICROWIRE	MICROWIRE	-	MICROWIRE	MICROWIRE	MICROWIRE	MICROWIRE	MICROWIRE
最大待机电流	0.00005 A	-	0.00005 A	0.00005 A	-	0.00005 A	0.00005 A	0.00005 A	0.00005 A	0.00005 A
最大压摆率	0.02 mA	-	0.02 mA	0.02 mA	-	0.02 mA	0.02 mA	0.02 mA	0.02 mA	0.02 mA
最大供电电压 (Vsup)	5.5 V	-	5.5 V	5.5 V	-	5.5 V	5.5 V	5.5 V	5.5 V	5.5 V
最小供电电压 (Vsup)	4.5 V	-	4.5 V	4.5 V	-	4.5 V	4.5 V	4.5 V	4.5 V	4.5 V
标称供电电压 (Vsup)	5 V	-	5 V	5 V	-	5 V	5 V	5 V	5 V	5 V
表面贴装	YES	-	YES	YES	-	YES	YES	YES	YES	YES
技术	CMOS	-	CMOS	CMOS	-	CMOS	CMOS	CMOS	CMOS	CMOS
温度等级	INDUSTRIAL	-	INDUSTRIAL	COMMERCIAL	-	INDUSTRIAL	COMMERCIAL	COMMERCIAL	COMMERCIAL	INDUSTRIAL
端子面层	Tin/Lead (Sn/Pb)	-	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)	-	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)
端子形式	GULL WING	-	J BEND	J BEND	-	J BEND	J BEND	GULL WING	GULL WING	GULL WING
端子节距	1.27 mm	-	1.27 mm	1.27 mm	-	1.27 mm	1.27 mm	1.27 mm	1.27 mm	1.27 mm
端子位置	DUAL	-	QUAD	QUAD	-	QUAD	QUAD	DUAL	DUAL	DUAL
处于峰值回流温度下的最长时间	NOT SPECIFIED	-	NOT SPECIFIED	NOT SPECIFIED	-	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED
类型	NOR TYPE	-	NOR TYPE	NOR TYPE	-	NOR TYPE	NOR TYPE	NOR TYPE	NOR TYPE	NOR TYPE
宽度	8.79 mm	-	11.43 mm	11.43 mm	-	11.43 mm	11.43 mm	8.79 mm	8.79 mm	8.79 mm
写保护	SOFTWARE	-	SOFTWARE	SOFTWARE	-	SOFTWARE	SOFTWARE	SOFTWARE	SOFTWARE	SOFTWARE
Base Number Matches	1	-	1	1	-	1	1	1	1	1

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