DATA SHEET
E.S.D NOISE CLIPPING DIODES
NNCD3.3A to NNCD12A
ELECTROSTATIC DISCHARGE NOISE CLIPPING DIODES
(400 mW TYPE)
This product series is a diode developed for E.S.D (Electrostatic
Discharge) noise protection. Based on the IEC1000-4-2 test on
electromagnetic interference (EMI), the diode assures an endur-
ance of no less than 30 kV.
Type NNCD2.0A to NNCD12A Series is into DO-34 Package
(Body length 2.4 mm MAX.) with DHD (Double Heatsink Diode)
construction having allowable power dissipation of 400 mW.
φ
0.4
25 MIN.
Cathode
indication
PACKAGE DIMENSIONS
(in millimeters)
FEATURES
• Based on the electrostatic discharge immunity test (IEC1000-4-
2), the product assures the minimum endurance of 30 kV.
• Based on the reference supply of the set, the product achieves
a series over a wide range (15 product name lined up).
• DHD (Double Heatsink Diode) construction.
φ
2.0 MAX.
APPLICATIONS
• Circuit E.S.D protection.
• Circuits for Waveform clipper, Surge absorber.
MAXIMUM RATINGS (T
A
= 25
°
C)
Power Dissipation
Surge Reverse Power
Junction Temperature
Storage Temperature
P
P
RSM
T
j
T
stg
400 mW
100 W (t
T
= 10
µ
s 1 pulse)
175
°C
–65
°C
to +175
°C
Fig. 7
Document No. D11769EJ2V0DS00 (2nd edition)
Date Published December 1996 N
Printed in Japan
25 MIN.
2.4 MAX.
©
1996
NNCD3.3A to NNCD12A
ELECTRICAL CHARACTERISTICS (T
A
= 25 ˚C)
Dynamic
Impedance
Note 2
Zz (Ω)
MAX.
120
120
120
120
120
100
70
40
30
25
20
20
20
20
25
I
T
(mA)
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
Breakdown Voltage
Note 1
V
BR
(V)
Type Number
MIN.
NNCD3.3A
NNCD3.6A
NNCD3.9A
NNCD4.3A
NNCD4.7A
NNCD5.1A
NNCD5.6A
NNCD6.2A
NNCD6.8A
NNCD7.5A
NNCD8.2A
NNCD9.1A
NNCD10A
NNCD11A
NNCD12A
3.16
3.47
3.77
4.05
4.47
4.85
5.29
5.81
6.32
6.88
7.56
8.33
9.19
10.18
11.13
MAX.
3.53
3.83
4.14
4.53
4.91
5.35
5.88
6.40
6.97
7.64
8.41
9.29
10.3
11.26
12.30
I
T
(mA)
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
Reverse Leakage
I
R
(
µ
A)
Capacitance
C
t
(pF)
TEST
CONDITION
E.S.D Voltage
(kV)
TEST
CONDITION
MAX.
20
10
5
5
5
5
5
5
2
0.5
0.5
0.5
0.2
0.2
0.2
V
R
(V)
1.0
1.0
1.0
1.0
1.0
1.5
2.5
3.0
3.5
4.0
5.0
6.0
7.0
8.0
9.0
TYP.
220
210
200
180
170
160
140
120
110
90
90
90
80
70
70
MIN.
30
30
30
30
30
30
C = 150 pF
R = 330
Ω
(IEC1000
-4-2)
V
R
= 0 V
f = 1 MHz
30
30
30
30
30
30
30
30
30
Notes 1.
Tested with pulse (40 ms)
2.
Zz is measured at I
T
give a small A.C. signal.
2
NNCD3.3A to NNCD12A
TYPICAL CHARACTERISTICS (T
A
= 25
°
C)
Fig. 1 POWER DISSIPATION vs.
AMBIENT TEMPERATURE
600
R
th
- Thermal Resistance - °C/W
P - Power Dissipation - mW
500
400
= 10 mm
300
200
100 P.C Board
φ
3 mm = 3 mm
t = 0.035
0
0 20 40 60 80 100 120 140 160 180 200
T
A
- Ambient Temperature - °C
= 5 mm
= 10 mm
= 5 mm
= 3 mm
600
500
400
300
200
100
0
S
= 10 mm
= 5 mm
= 3 mm
Fig. 2 THERMAL RESISTANCE vs.
SIZE OF P.C BOARD
Junction to
anbient
P.C Board
7 mm
t = 0.035 mm
0
20
40
60
80
100
S - Size of P.C Board - mm
2
Fig. 3 I
T
- V
BR
CHARACTERISTICS
Fig. 4 I
T
- V
BR
CHARACTERISTICS
NNCD7.5A
NNCD6.8A
100 m
NNCD3.3A
10 m NNCD3.6A
NNCD3.9A
NNCD4.3A
1m
NNCD4.7A
100
µ
10
µ
1
µ
NNCD5.1A
NNCD5.6A
10 n
NNCD6.2A
NNCD8.2A
NNCD9.1A
100 m
NNCD10A
10 m
NNCD11A
NNCD12A
I
T
- On State Current - A
I
T
- On State Current - A
1m
100
µ
10
µ
1
µ
100 n
100 n
10 n
1n
0
1
2
3
4
5
6
7
8
9 10
V
BR
- Breakdown Voltage - V
1n
0
7
8
9 10 11 12 13 14 15
V
BR
- Breakdown Voltage - V
3
NNCD3.3A to NNCD12A
Fig. 5 Z
z
- I
T
CHARACTERISTICS
1 000
T
A
= 25 °C
TYP.
NNCD3.3A
NNCD3.9A
NNCD4.7A
10
Z
Z
- Dynamic Impedance -
Ω
100
6A
5.
CD
NN
NN
CD
5A
7.
NN
CD
10
1
0.01
A
100
0.1
1
10
I
T
- On State Current - mA
Fig. 6 TRANSIENT THERMAL IMPEDANCE
5 000
Z
th
- Transient Thermal Impedance - °C/W
1 000
375 °C/W
NNCD [ ] A
100
10
5
1m
10 m
100 m
1
t - Time - s
10
100
Fig. 7 SURGE REVERSE POWER RATING
1 000
T
A
= 25 °C
Non-repetitive
P
RSM
P
RSM
- Surge Reverse Power - W
t
T
100
NNCD [ ] A
10
1
1
µ
10
µ
100
µ
1m
10 m
100 m
t
T
- Pulse Width - s
4
NNCD3.3A to NNCD12A
REFERENCE
Document Name
NEC semiconductor device reliability/quality control system
NEC semiconductor device reliability/quality control system
Quality grade on NEC semiconductor device
Semiconductor device mounting technology manual
Guide to quality assurance for semiconductor device
Document No.
C11745E
MEI-1201
C11531E
C10535E
MEI-1202
5
