DATA SHEET
ESD NOISE CLIPPING DIODE
NNCD5.6J to NNCD36J
ELECTROSTATIC DISCHARGE NOISE CLIPPING DIODE
2-PIN ULTRA SUPER MINI MOLD (FLAT TYPE)
DESCRIPTION
These
products
are
a
diode
developed
Based
for
on
ESD
the
(Electrostatic
Discharge)
absorption.
PACKAGE DRAWING (Unit: mm)
1.4 ± 0.1
1.0 ± 0.1
0.3 ± 0.05
IEC-61000-4-2 test on electromagnetic interference (EMI),
0.6 ± 0.1
the diode assures an endurance, thus making itself most
suitable for external interface circuit protection.
These products are can cope with more high density
assembling.
Cathode Indication
0.13 ± 0.05
FEATURES
•
Base on the electrostatic discharge immunity test (IEC
61000-4-2),
the product assures the minimum endurance.
product can achiever high density and automatic packaging.
APPLICATIONS
•
External interface circuit ESD absorption.
•
Circuits for waveform clipper, surge absorber
MAXIMUM RATINGS (T
A
= 25°C)
Item
Power Dissipation
Surge Reverse Power
Junction Temperature
Storage Temperature
P
P
RSM
T
j
T
stg
Symbol
Rating
150
85 (t = 10
µ
s, 1 pulse)
150
−55
to +150
Unit
mW
W
o
o
Total
C
C
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all products and/or types are available in every country. Please check with an NEC Electronics
sales representative for availability and additional information.
Document No. D15985EJ3V1DS00 (3rd edition)
Date Published January 2005 NS CP(K)
Printed in Japan
The mark
shows major revised points.
0.05 MAX.
•
Mounted in the ultra super mini mold (flat) package, the
0.5 MAX.
Remark
2003
NNCD5.6J to NNCD36J
ELECTRICAL CHARACTERISTICS (T
A
= 25°C)
TYPE No.
Breakdown Voltage
V
BR
(V)
MIN.
NNCD5.6J
NNCD6.8J
NNCD8.2J
NNCD10J
NNCD16J
NNCD18J
NNCD24J
NNCD36J
5.3
6.2
7.7
9.0
15.0
16.2
22.0
34.0
MAX.
6.3
7.1
8.7
11.0
17.0
19.8
26.0
38.0
I
T
(mA)
5
5
5
5
5
5
5
2
TYP.
110
90
70
55
30
25
20
15
Note1
Capacitance
C
t
(pF)
Condition
V
R
= 0 V
f = 1 MHz
Reverse Leakage
I
R
(
µ
A)
MAX.
5
2
2
2
2
2
2
2
V
R
(V)
2.5
3.5
5.0
7.0
12.0
13.0
19.0
27.0
ESD Voltage
(kV)
MIN.
30
30
30
30
30
23
15
12
Note2
I
T
(mA)
C = 150 pF
R = 330
Ω
Contact
discharge
Notes 1.
Tested with pulse (40 ms)
2.
Based upon with IEC 61000-4-2
2
Data Sheet D15985EJ3V1DS
NNCD5.6J to NNCD36J
TYPICAL CHARACTERISTICS (T
A
= 25°C)
Figure 1. POWER DISSIPATION vs.
AMBIENT TEMPERATURE
200
180
P - Power Dissipation - mW
160
140
120
100
80
60
40
20
0
0
25
50
75
100
125
150
T
A
- Ambient Temperature -
°C
Figure 2. I
T
- V
BR
CHARACTERISTICS
100000
NNCD5.6J
10000
I
T
- On-state Current -
µ
A
NNCD8.2J
NNCD16J
NNCD24J
NNCD36J
1000
100
10
1
0.1
NNCD6.8J
0.01
0
5
10
15
20
25
30
35
40
45
V
BR
- Breakdown Voltage - V
NNCD10J
NNCD18J
Data Sheet D15985EJ3V1DS
3
NNCD5.6J to NNCD36J
Figure 3. C
t
- V
R
CHARACTERISTICS
90
C
t
- Capacitance between Terminal - pF
80
70
60
50
NNCD5.6J
NNCD6.8J
T
A
= 25
˚C
f = 1 MHz
NNCD8.2J
40
NNCD10J
30
20
10
0
0.1
1
V
R
- Reverse Voltage - V
NNCD16J
NNCD18J
NNCD24J
NNCD36J
10
100
Figure 4. SURGE REVERSE POWER RATINGS
1000
P
RSM
- Surge Reverse Power - W
T
A
= 25˚C
Non-Repetive
P
RSM
t
T
100
NNCD[ ]J
10
1
1
µ
10
µ
100
µ
1m
10 m
100 m
t
T
- Pulse Width - s
Figure 5. TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS
Z
th
- Transient Thermal Impedance - (ºC/W)
1000
833˚C/W
NNCD[ ]J
100
10
1
100
µ
1m
10m
100 m
1
10
100
1000
t - Time - s
Remark
When using ceramic board of 10 x 7.5 x 0.75 mm (Cu film 11 x 2 x 0.035 mm)
4
Data Sheet D15985EJ3V1DS
NNCD5.6J to NNCD36J
•
The information in this document is current as of January, 2005. The information is subject to
change without notice. For actual design-in, refer to the latest publications of NEC Electronics data
sheets or data books, etc., for the most up-to-date specifications of NEC Electronics products. Not
all products and/or types are available in every country. Please check with an NEC Electronics sales
representative for availability and additional information.
•
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•
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•
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M8E 02. 11-1
