DATA SHEET
MOS FIELD EFFECT TRANSISTOR
NP40N055EHE, NP40N055KHE
NP40N055CHE, NP40N055DHE, NP40N055MHE, NP40N055NHE
SWITCHING
N-CHANNEL POWER MOS FET
DESCRIPTION
These products are N-channel MOS Field Effect Transistors designed for high current switching applications.
<R>
ORDERING INFORMATION
PART NUMBER
NP40N055EHE-E1-AY
NP40N055EHE-E2-AY
NP40N055KHE-E1-AY
NP40N055KHE-E2-AY
Note1, 2
Note1, 2
Note1
Note1
Note1, 2
Note1, 2
Note1
Note1
LEAD PLATING
PACKING
PACKAGE
TO-263 (MP-25ZJ) typ. 1.4 g
Pure Sn (Tin)
Tape 800 p/reel
TO-263 (MP-25ZK) typ. 1.5 g
NP40N055CHE-S12-AZ
NP40N055DHE-S12-AY
NP40N055MHE-S18-AY
NP40N055NHE-S18-AY
Sn-Ag-Cu
Tube 50 p/tube
TO-220 (MP-25) typ. 1.9 g
TO-262 (MP-25 Fin Cut) typ. 1.8 g
TO-220 (MP-25K) typ. 1.9 g
TO-262 (MP-25SK) typ. 1.8 g
Pure Sn (Tin)
Notes 1.
Pb-free (This product does not contain Pb in the external electrode.)
2.
Not for new design
(TO-220)
FEATURES
•
Channel temperature 175 degree rated
•
Super low on-state resistance
R
DS(on)
= 23 mΩ MAX. (V
GS
= 10 V, I
D
= 20 A)
•
Low input capacitance
C
iss
= 1070 pF TYP.
•
Built-in gate protection diode
(TO-262)
(TO-263)
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all products and/or types are available in every country. Please check with an NEC Electronics
sales representative for availability and additional information.
Document No. D14092EJ6V0DS00 (6th edition)
Date Published October 2007 NS
Printed in Japan
2002, 2007
The mark <R> shows major revised points.
The revised points can be easily searched by copying an "<R>" in the PDF file and specifying it in the "Find what:" field.
NP40N055EHE, NP40N055KHE, NP40N055CHE, NP40N055DHE, NP40N055MHE, NP40N055NHE
ABSOLUTE MAXIMUM RATINGS (T
A
= 25°C)
Drain to Source Voltage (V
GS
= 0 V)
Gate to Source Voltage (V
DS
= 0 V)
Drain Current (DC) (T
C
= 25°C)
Drain Current (Pulse)
Note1
V
DSS
V
GSS
I
D(DC)
I
D(pulse)
P
T
P
T
T
ch
T
stg
55
±20
±40
±100
1.8
66
175
−55
to
+175
29/21/7
0.8/44/49
V
V
A
A
W
W
°C
°C
A
mJ
Total Power Dissipation (T
A
= 25°C)
Total Power Dissipation (T
C
= 25°C)
Channel Temperature
Storage Temperature
Single Avalanche Current
Single Avalanche Energy
Note2
Note2
I
AS
E
AS
Notes 1.
PW
≤
10
μ
s, Duty cycle
≤
1%
2.
Starting T
ch
= 25°C, V
DD
= 28 V, R
G
= 25
Ω,
V
GS
= 20
→
0 V (See
Figure 4.)
THERMAL RESISTANCE
Channel to Case Thermal Resistance
Channel to Ambient Thermal Resistance
R
th(ch-C)
R
th(ch-A)
2.27
83.3
°C/W
°C/W
2
Data Sheet D14092EJ6V0DS
NP40N055EHE, NP40N055KHE, NP40N055CHE, NP40N055DHE, NP40N055MHE, NP40N055NHE
ELECTRICAL CHARACTERISTICS (T
A
= 25°C)
CHARACTERISTICS
Drain to Source On-state Resistance
Gate to Source Threshold Voltage
Forward Transfer Admittance
Drain Leakage Current
Gate to Source Leakage Current
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Total Gate Charge
Gate to Source Charge
Gate to Drain Charge
Body Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
SYMBOL
R
DS(on)
V
GS(th)
| y
fs
|
I
DSS
I
GSS
C
iss
C
oss
C
rss
t
d(on)
t
r
t
d(off)
t
f
Q
G
Q
GS
Q
GD
V
F(S-D)
t
rr
Q
rr
TEST CONDITIONS
V
GS
= 10 V, I
D
= 20 A
V
DS
= V
GS
, I
D
= 250
μ
A
V
DS
= 10 V, I
D
= 20 A
V
DS
= 55 V, V
GS
= 0 V
V
GS
=
±20
V, V
DS
= 0 V
V
DS
= 25 V,
V
GS
= 0 V,
f = 1 MHz
I
D
= 20 A,
V
GS
= 10 V,
V
DD
= 28 V,
R
G
= 1
Ω
I
D
= 40 A,
V
DD
= 44 V,
V
GS
= 10 V
I
F
= 40 A, V
GS
= 0 V
I
F
= 40 A, V
GS
= 0 V,
di/dt = 100 A/
μ
s
1070
190
95
16
9.2
29
9.2
23
6
9
1.0
38
46
2.0
7
MIN.
TYP.
18
3.0
14
10
±10
1610
280
180
35
23
57
23
35
MAX.
23
4.0
UNIT
mΩ
V
S
μ
A
μ
A
pF
pF
pF
ns
ns
ns
ns
nC
nC
nC
V
ns
nC
TEST CIRCUIT 1 AVALANCHE CAPABILITY
D.U.T.
R
G
= 25
Ω
PG.
V
GS
= 20
→
0 V
50
Ω
TEST CIRCUIT 2 SWITCHING TIME
D.U.T.
L
V
DD
PG.
R
G
V
GS
R
L
V
DD
V
DS
90 %
90 %
10 % 10 %
V
GS
Wave Form
0
10 %
V
GS
90 %
BV
DSS
I
AS
I
D
V
DD
V
DS
V
GS
0
τ
τ
= 1
μ
s
Duty Cycle
≤
1 %
V
DS
V
DS
Wave Form
0
t
d(on)
t
on
t
r
t
d(off)
t
off
t
f
Starting T
ch
TEST CIRCUIT 3 GATE CHARGE
D.U.T.
I
G
= 2 mA
PG.
50
Ω
R
L
V
DD
Data Sheet D14092EJ6V0DS
3
NP40N055EHE, NP40N055KHE, NP40N055CHE, NP40N055DHE, NP40N055MHE, NP40N055NHE
TYPICAL CHARACTERISTICS (T
A
= 25°C)
Figure1. DERATING FACTOR OF FORWARD BIAS
SAFE OPERATING AREA
70
dT - Percentage of Rated Power - %
P
T
- Total Power Dissipation - W
Figure2. TOTAL POWER DISSIPATION vs.
CASE TEMPERATURE
100
80
60
40
20
0
60
50
40
30
20
10
0
0
25
50
75
100 125 150 175 200
0
25
50
75
100 125 150 175 200
T
C
- Case Temperature -
°C
Figure.3 FORWARD BIAS SAFE OPERATING AREA
1000
Single Pulse Avalanche Energy - mJ
T
C
- Case Temperature -
°C
Figure4. SINGLE AVALANCHE ENERGY
DERATING FACTOR
60
50
40
30
20
10
0
25
0.8 mJ
49 mJ
44 mJ
I
D
- Drain Current - A
100
d
ite
Lim V)
n)
10
S(o
R
D
V
GS
=
(
I
D(pulse)
I
D(DC)
Po
Lim wer
ite Dis
s
d
DC
PW
1m
tio
10
=1
s
0
μ
0
μ
s
s
10
ipa
n
I
AS
= 7 A
21 A
29 A
1
T
C
= 25°C
Single Pulse
1
10
100
V
DS
- Drain to Source Voltage - V
0.1
0.1
50
75
100
125
150
175
Starting T
ch
- Starting Channel Temperature -
°C
Figure5. TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH
1000
r
th(t)
- Transient Thermal Resistance -
°C/W
100
R
th(ch-A)
= 83.3°C/W
10
R
th(ch-C)
= 2.27°C/W
1
0.1
Single Pulse
0.01
10
μ
100
μ
1m
10 m
100 m
1
10
100
1000
PW - Pulse Width - s
4
Data Sheet D14092EJ6V0DS
NP40N055EHE, NP40N055KHE, NP40N055CHE, NP40N055DHE, NP40N055MHE, NP40N055NHE
Figure6. FORWARD TRANSFER CHARACTERISTICS
1000
Pulsed
120
100
Figure7. DRAIN CURRENT vs.
DRAIN TO SOURCE VOLTAGE
I
D
- Drain Current - A
100
I
D
- Drain Current - A
80
60
40
20
V
GS
=10 V
10
T
A
=
−55°C
25°C
75°C
150°C
175°C
1
0.1
V
DS
= 10 V
6
7
2
3
4
5
0
0
Pulsed
1
2
3
4
5
V
DS
- Drain to Source Voltage - V
V
GS
- Gate to Source Voltage - V
R
DS(on)
- Drain to Source On-state Resistance - mΩ
| y
fs
| - Forward Transfer Admittance - S
Figure8. FORWARD TRANSFER ADMITTANCE vs.
DRAIN CURRENT
100 Pulsed
V
DS
= 10 V
10
T
A
= 175°C
75°C
25°C
−55°C
Figure9. DRAIN TO SOURCE ON-STATE RESISTANCE vs.
GATE TO SOURCE VOLTAGE
50
Pulsed
40
30
20
I
D
= 20 A
1
0.1
10
0
0
0.01
0.01
0.1
1
10
100
2
4
6
8
10
12
14
16
18
I
D
- Drain Current - A
V
GS
- Gate to Source Voltage - V
Figure11. GATE TO SOURCE THRESHOLD VOLTAGE vs.
CHANNEL TEMPERATURE
4.0
V
DS
= V
GS
I
D
= 250
μA
R
DS(on)
- Drain to Source On-state Resistance - mΩ
50
Pulsed
40
V
GS(th)
- Gate to Source Threshold Voltage - V
Figure10. DRAIN TO SOURCE ON-STATE
RESISTANCE vs. DRAIN CURRENT
3.0
30
20
V
GS
= 10 V
2.0
10
1.0
0
0.1
0
1
10
100
−50
0
50
100
150
I
D
- Drain Current - A
T
ch
- Channel Temperature -
°C
Data Sheet D14092EJ6V0DS
5
