output power levels to 50 W (47 dBm) in an industry
standard surface mount package.
The NPT2020 is ideally suited for defense
communications, land mobile radio, avionics,
wireless infrastructure, ISM applications and VHF/
UHF/L/S-band radar.
Built using the SIGANTIC® process - a proprietary
GaN-on-Silicon technology.
Functional Schematic
2
RF
IN
/ V
G
1
3
RF
OUT
/ V
D
Flange
Ordering Information
Part Number
NPT2020
NPT2020-SMBPPR
NPT2020-SMB2
Package
Bulk Quantity
Custom Sample Board
1250-1850 MHz
Sample Board
1
Pin Configuration
Pin No.
1
2
3
Pin Name
RF
IN
/ V
G
RF
OUT
/ V
D
Flange
2
Function
RF Input / Gate
RF Output / Drain
Ground / Source
1. When ordering, specify application requirements (frequency,
linearity, etc.)
2. The Flange must be connected to RF and DC ground. This
path must also provide a low thermal resistance heat path.
*
1
Restrictions on Hazardous Substances, European Union Directive 2011/65/EU.
M/A-COM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice.
Visit
www.macom.com
for additional data sheets and product information.
For further information and support please visit:
https://www.macom.com/support
NPT2020
GaN Wideband Transistor 48 V, 50 W
DC - 3.5 GHz
RF Electrical Specifications: T
A
= 25 °C, V
DS
= 48 V, I
DQ
= 350 mA
Parameter
Small Signal Gain
Saturated Output Power
Drain Efficiency at Saturation
Power Gain
Drain Efficiency
Ruggedness: Output Mismatch
Test Conditions
CW, 3.5 GHz
CW, 3.5 GHz
CW, 3.5 GHz
3.5 GHz, P
OUT
= 50 W
3.5 GHz, P
OUT
= 50 W
All phase angles
Symbol
G
SS
P
SAT
SAT
G
P
Min.
-
-
-
12
50
Typ.
14.5
48
60
13.5
55
Max.
-
-
-
-
-
Units
dB
dBm
%
dB
%
Rev. V1
VSWR = 10:1, No Device Damage
DC Electrical Characteristics: T
A
= 25 °C
Parameter
Drain-Source Leakage Current
Gate-Source Leakage Current
Gate Threshold Voltage
Gate Quiescent Voltage
On Resistance
Saturated Drain Current
Test Conditions
V
GS
= -8 V, V
DS
= 160 V
V
GS
= -8 V, V
DS
= 0 V
V
DS
= 48 V, I
D
= 14 mA
V
DS
= 48 V, I
D
= 350 mA
V
DS
= 2 V, I
D
= 105 mA
V
DS
= 7 V pulsed, pulse width 300 µs
Symbol
I
DLK
I
GLK
V
T
V
GSQ
R
ON
I
D,MAX
Min.
-
-
-2.5
-2.1
-
-
Typ.
-
-
-1.5
-1.2
0.34
8.2
Max.
14
7
-0.5
-0.3
-
-
Units
mA
mA
V
V
A
2
M/A-COM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice.
Visit
www.macom.com
for additional data sheets and product information.
For further information and support please visit:
https://www.macom.com/support
NPT2020
GaN Wideband Transistor 48 V, 50 W
DC - 3.5 GHz
Absolute Maximum Ratings
3,4,5
Parameter
Drain Source Voltage, V
DS
Gate Source Voltage, V
GS
Gate Current, I
G
Junction Temperature, T
J
Operating Temperature
Storage Temperature
Absolute Maximum
160 V
-10 to 3 V
28 mA
+200°C
-40°C to +55°C
-65°C to +150°C
Rev. V1
3. Exceeding any one or combination of these limits may cause permanent damage to this device.
4. MACOM does not recommend sustained operation near these survivability limits.
5.
Operating at nominal conditions with T
J
≤ 200°C will ensure MTTF > 1 x 10
6
hours.
Thermal Characteristics
6
Parameter
Thermal Resistance
Test Conditions
V
DS
= 48 V, T
J
= 200°C
Symbol
R
JC
Typical
2.1
Units
°C/W
6.
Junction temperature (T
J
) measured using IR Microscopy. Case temperature measured using thermocouple
embedded in heat-sink.
Handling Procedures
Please observe the following precautions to avoid
damage:
Static Sensitivity
Gallium Nitride Circuits are sensitive to electrostatic
discharge (ESD) and can be damaged by static
electricity. Proper ESD control techniques should
be used when handling these HBM Class 1A
devices.
3
M/A-COM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice.
Visit
www.macom.com
for additional data sheets and product information.
For further information and support please visit:
https://www.macom.com/support
NPT2020
GaN Wideband Transistor 48 V, 50 W
DC - 3.5 GHz
Load-Pull Performance: V
DS
= 48 V, I
DQ
= 350 mA, T
C
= 25 °C
Reference Plane at Device Leads, CW Drain Efficiency and Output Power Tradeoff Impedance
Frequency
(MHz)
2700
3100
3500
Z
S
(Ω)
1.6 - j7.2
1.5 - j8.6
1.9 - j10.7
Z
L
(Ω)
2.9 + j2.3
2.9 + j0.6
2.9 - j0.7
P
SAT
(W)
65
64
62
G
SS
(dB)
16.2
16.1
15.7
Drain Efficiency
at P
SAT
(%)
58
55
53
Rev. V1
Impedance Reference
Z
S
and Z
L
vs. Frequency
Z
S
Z
L
Gain vs. Output Power
19
18
Drain Efficiency vs. Output Power
60
2700 MHz
50
3100 MHz
3500 MHz
Drain Efficiency (%)
40
45
50
17
Gain (dB)
16
15
14
13
12
11
30
35
2700 MHz
3100 MHz
3500 MHz
40
30
20
10
0
30
35
40
45
50
Output Power (dBm)
4
Output Power (dBm)
M/A-COM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice.
Visit
www.macom.com
for additional data sheets and product information.
For further information and support please visit:
https://www.macom.com/support
NPT2020
GaN Wideband Transistor 48 V, 50 W
DC - 3.5 GHz
Evaluation Board and Recommended Tuning Solution
3.5 GHz Narrowband Circuit
C11
4.7 pF
Rev. V1
V
GS
C1
1
μF
C2
C3
C4
0.1
μF
0.01
μF
1000 pF
R1
24.9
Ω
C9
10 pF
C8
C7
1000 pF 0.01
μF
C6
0.1
μF
C5
1
μF
V
DS
C12
6.8 pF
C13
6.8 pF
C10
12 pF
R2
0
Ω
C16
3.3 pF
C17
0.6 pF
RF
IN
C14
0.7 pF
C15
10 pF
RF
OUT
NPT2020
Description
Parts measured on evaluation board (20-mil thick
RO4350). Matching is provided using a
combination of lumped elements and transmission
lines as shown in the simplified schematic above.
Recommended tuning solution component
placement, transmission lines, and details are
shown on the next page.
Bias Sequencing
Turning the device ON
1. Set V
GS
to the pinch-off (V
P
), typically -5 V.
2. Turn on V
DS
to nominal voltage (48 V).
3. Increase V
GS
until the I
DS
current is reached.
4. Apply RF power to desired level.
Turning the device OFF
1. Turn the RF power off.
2. Decrease V
GS
down to V
P.
3. Decrease V
DS
down to 0 V.
4. Turn off V
GS
.
5
M/A-COM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice.
Visit
www.macom.com
for additional data sheets and product information.
