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NRVBA340T3G

直流反向耐压(Vr):40V 平均整流电流(Io):3A 正向压降(Vf):450mV @ 3A 40V,3A

器件类别:分立半导体    二极管   

厂商名称:ON Semiconductor(安森美)

厂商官网:http://www.onsemi.cn

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器件参数
参数名称
属性值
Brand Name
ON Semiconductor
是否无铅
不含铅
包装说明
R-PDSO-J2
针数
2
制造商包装代码
403D-02
Reach Compliance Code
not_compliant
ECCN代码
EAR99
Factory Lead Time
1 week
其他特性
FREE WHEELING DIODE
应用
POWER
配置
SINGLE
二极管元件材料
SILICON
二极管类型
RECTIFIER DIODE
最大正向电压 (VF)
0.45 V
JESD-30 代码
R-PDSO-J2
JESD-609代码
e3
最大非重复峰值正向电流
100 A
元件数量
1
相数
1
端子数量
2
最高工作温度
150 °C
最低工作温度
-55 °C
最大输出电流
3 A
封装主体材料
PLASTIC/EPOXY
封装形状
RECTANGULAR
封装形式
SMALL OUTLINE
峰值回流温度(摄氏度)
NOT SPECIFIED
参考标准
AEC-Q101
最大重复峰值反向电压
40 V
最大反向电流
300 µA
反向测试电压
40 V
表面贴装
YES
技术
SCHOTTKY
端子面层
Tin (Sn)
端子形式
J BEND
端子位置
DUAL
处于峰值回流温度下的最长时间
NOT SPECIFIED
Base Number Matches
1
文档预览
MBRA340, NRVBA340,
SBRA340T3G
Surface Mount
Schottky Power Rectifier
SMA Power Surface Mount Package
Employing the Schottky Barrier principle in a large area
metal−to−silicon power diode. State of the art geometry features
epitaxial construction with oxide passivation and metal overlay
contact. Ideally suited for low voltage, high frequency rectification, or
as free wheeling and polarity diodes in surface mount applications
where compact size and weight are critical to the system.
Features
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SCHOTTKY BARRIER
RECTIFIER
3.0 AMPERES
40 VOLTS
Small Compact Surface Mountable Package with J−Bent Leads
Rectangular Package for Automated Handling
Highly Stable Oxide Passivated Junction
Very Low Forward Voltage Drop
Guardring for Stress Protection
NRVBA Prefix for Automotive and Other Applications Requiring
Unique Site and Control Change Requirements; AEC−Q101
Qualified and PPAP Capable*
These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
Mechanical Characteristics:
SMA
CASE 403D
STYLE 1
1
Cathode
2
Anode
MARKING DIAGRAM
A34
AYWWG
Case: Epoxy, Molded
Weight: 70 mg (approximately)
Finish: All External Surfaces Corrosion Resistant and Terminal
Leads are Readily Solderable
Lead and Mounting Surface Temperature for Soldering Purposes:
260°C Max. for 10 Seconds
Polarity: Cathode Lead Indicated by Polarity Band
ESD Ratings:
Machine Model = C
Human Body Model = 3B
Device Meets MSL 1 Requirements
A34
= Device Code
A
= Assembly Location**
Y
= Year
WW
= Work Week
G
= Pb−Free Package
(Note: Microdot may be in either location)
**The Assembly Location code (A) is front side
optional. In cases where the Assembly Location is
stamped in the package bottom (molding ejecter pin),
the front side assembly code may be blank.
ORDERING INFORMATION
Device
Package
Shipping
MBRA340T3G
NRVBA340T3G,
SMA
5,000 /
NRVBA340T3G−VF01, (Pb−Free)
Tape & Reel
SBRA340T3G
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
©
Semiconductor Components Industries, LLC, 2013
1
January, 2018 − Rev. 9
Publication Order Number:
MBRA340T3/D
MBRA340, NRVBA340, SBRA340T3G
MAXIMUM RATINGS
Rating
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
Average Rectified Forward Current
(At Rated V
R
, T
L
= 100°C)
Non−Repetitive Peak Surge Current
(Surge Applied at Rated Load Conditions Halfwave, Single Phase, 60 Hz)
Storage/Operating Case Temperature
Operating Junction Temperature (Note 1)
Voltage Rate of Change
(Rated V
R
, T
J
= 25°C)
Symbol
V
RRM
V
RWM
V
R
I
O
3.0
I
FSM
100
T
stg
, T
C
T
J
dv/dt
10,000
−55 to +150
−55 to +150
°C
°C
V/ms
A
Value
40
Unit
V
A
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality
should not be assumed, damage may occur and reliability may be affected.
1. The heat generated must be less than the thermal conductivity from Junction−to−Ambient: dP
D
/dT
J
< 1/R
qJA
.
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance − Junction−to−Lead (Note 2)
Thermal Resistance − Junction−to−Ambient (Note 2)
2. Mounted on 2″ Square PC Board with 1″ Square Total Pad Size, PC Board FR4.
Symbol
R
θJL
R
θJA
Value
15
81
Unit
°C/W
ELECTRICAL CHARACTERISTICS
Characteristic
Maximum Instantaneous Forward Voltage (Note 3)
(I
F
= 3.0 A)
Maximum Instantaneous Reverse Current
(V
R
= 40 V)
I
R
Symbol
V
F
T
J
= 25°C
0.450
T
J
= 25°C
0.3
Value
T
J
= 100°C
0.390
T
J
= 100°C
15
mA
Unit
Volts
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
3. Pulse Test: Pulse Width
250
μs,
Duty Cycle
2.0%.
TYPICAL CHARACTERISTICS
10
I
F
, INSTANTANEOUS FORWARD
CURRENT (AMPS)
I
F
, INSTANTANEOUS FORWARD
CURRENT (AMPS)
10
1
T
J
= 125°C
1
T
J
= 125°C
T
J
= 100°C
0.1
0.10
T
J
= 100°C
0.20
T
J
= 25°C
0.30
0.40
T
J
= −55°C
0.50
0.60
0.1
0.10
T
J
= 25°C
0.20
0.30
0.40
T
J
= −55°C
0.50
0.60
V
F
, INSTANTANEOUS FORWARD VOLTAGE (VOLTS)
V
F
, MAXIMUM INSTANTANEOUS FORWARD
VOLTAGE (VOLTS)
Figure 1. Typical Forward Voltage
Figure 2. Maximum Forward Voltage
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2
MBRA340, NRVBA340, SBRA340T3G
100E−3
I
R
, REVERSE CURRENT (AMPS)
10E−3
1E−3
T
J
= 125°C
T
J
= 100°C
I
R
, MAXIMUM REVERSE CURRENT (AMPS)
100E−3
T
J
= 125°C
10E−3
T
J
= 100°C
1E−3
T
J
= 25°C
T
J
= −55°C
10E−6
100E−6
10E−6
1E−6
T
J
= 25°C
T
J
= −55°C
100E−6
100E−9
10E−9
1E−9
0
100E−12
10
20
30
V
R
, REVERSE VOLTAGE (VOLTS)
40
1E−6
0
10
20
30
V
R
, REVERSE VOLTAGE (VOLTS)
40
Figure 3. Typical Reverse Current
I
O
, AVERAGE FORWARD CURRENT (AMPS)
5
4.5
4
3.5
3
2.5
2
1.5
1
0.5
0
25
I
pk
/I
O
= 5
I
pk
/I
O
= 10
SQUARE WAVE
I
pk
/I
O
=
p
dc
freq = 20 kHz
P
FO
, AVERAGE POWER DISSIPATION (WATTS)
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0
0
Figure 4. Maximum Reverse Current
SQUARE
WAVE
dc
I
pk
/I
O
=
p
I
pk
/I
O
= 5
I
pk
/I
O
= 10
I
pk
/I
O
= 20
0.5
1
1.5
2
2.5
3
3.5
4
4.5
5
I
O
, AVERAGE FORWARD CURRENT (AMPS)
50
75
100
125
150
T
L
, LEAD TEMPERATURE (°C)
Figure 5. Current Derating
T
J
, DERATED OPERATING TEMPERATURE (°C)
Figure 6. Forward Power Dissipation
1000
T
J
= 25
°C
125
115
105
95
85
75
R
qJA
= 96
°C/W
65
55
0
5
35
10
15
20
25
30
V
R
, DC REVERSE VOLTAGE (VOLTS)
40
R
qJA
= 43
°C/W
R
qJA
= 63
°C/W
R
qJA
= 81
°C/W
R
qJA
= 22
°C/W
C, CAPACITANCE (pF)
100
0
5
10
15
20
25
30
V
R
, REVERSE VOLTAGE (VOLTS)
35
40
Figure 7. Capacitance
Figure 8. Typical Operating Temperature
Derating
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3
MBRA340, NRVBA340, SBRA340T3G
R
(t)
, TRANSIENT THERMAL RESISTANCE (°C/W)
100
D = 0.5
0.2
0.1
10
0.05
0.02
0.01
1
SINGLE PULSE
0.1
0.00001
0.0001
0.001
0.01
0.1
t, TIME (S)
1
10
100
1000
Figure 9. Thermal Response, Junction−to−Ambient (min pad)
R
(t)
, TRANSIENT THERMAL RESISTANCE (°C/W)
100
D = 0.5
0.2
10
0.1
0.05
0.02
1
0.01
0.1
SINGLE PULSE
0.00001
0.0001
0.001
0.01
0.1
t, TIME (S)
1
10
100
1000
Figure 10. Thermal Response, Junction to Ambient (1 inch pad)
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4
MBRA340, NRVBA340, SBRA340T3G
PACKAGE DIMENSIONS
SMA
CASE 403D
ISSUE H
H
E
E
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M,
1982.
2. CONTROLLING DIMENSION: INCH.
3. DIMENSION b SHALL BE MEASURED WITHIN DIMENSION L.
DIM
A
A1
b
c
D
E
H
E
L
MIN
1.97
0.05
1.27
0.15
2.29
4.06
4.83
0.76
MILLIMETERS
NOM
MAX
2.10
2.20
0.10
0.20
1.45
1.63
0.28
0.41
2.60
2.92
4.32
4.57
5.21
5.59
1.14
1.52
MIN
0.078
0.002
0.050
0.006
0.090
0.160
0.190
0.030
INCHES
NOM
0.083
0.004
0.057
0.011
0.103
0.170
0.205
0.045
MAX
0.087
0.008
0.064
0.016
0.115
0.180
0.220
0.060
b
D
POLARITY INDICATOR
OPTIONAL AS NEEDED
(SEE STYLES)
STYLE 1:
PIN 1. CATHODE (POLARITY BAND)
2. ANODE
A
L
c
A1
SOLDERING FOOTPRINT*
4.000
0.157
2.000
0.079
2.000
0.079
SCALE 8:1
mm
inches
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
ON Semiconductor and
are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.
ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent
coverage may be accessed at
www.onsemi.com/site/pdf/Patent−Marking.pdf.
ON Semiconductor reserves the right to make changes without further notice to any products herein.
ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards,
regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or
specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer
application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not
designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification
in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized
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PUBLICATION ORDERING INFORMATION
LITERATURE FULFILLMENT:
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Phone: 421 33 790 2910
ON Semiconductor Website: www.onsemi.com
Order Literature:
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For additional information, please contact your local
Sales Representative
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MBRA340T3/D
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