(Surge Applied at Rated Load Conditions Halfwave, Single Phase, 60 Hz)
Storage Temperature Range
Operating Junction Temperature
Unclamped Inductive Switching Energy (10 mH Inductor, Non−repetitive)
ESD Rating (Human Body Model)
ESD Rating (Machine Model)
Symbol
V
RRM
V
RWM
V
R
I
F(AV)
I
FRM
I
FSM
T
stg
T
J
E
AS
Value
Unit
V
200
3.0
6.0
80
−65 to +175
−55 to +175
10
3B
M4
A
A
A
°C
°C
mJ
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality
should not be assumed, damage may occur and reliability may be affected.
THERMAL CHARACTERISTICS
(per diode unless noted)
Characteristic
Thermal Resistance, Junction−to−Case, Steady State
(Assumes 600 mm
2
1 oz. copper bond pad, on a FR4 board)
Symbol
R
θJC
Typ
−
Max
3.4
Unit
°C/W
ELECTRICAL CHARACTERISTICS
(per diode unless noted)
Instantaneous Forward Voltage (Note 1)
(i
F
= 3.0 Amps, T
J
= 125°C)
(i
F
= 3.0 Amps, T
J
= 25°C)
(i
F
= 6.0 Amps, T
J
= 125°C)
(i
F
= 6.0 Amps, T
J
= 25°C)
Instantaneous Reverse Current (Note 1)
(Rated dc Voltage, T
J
= 125°C)
(Rated dc Voltage, T
J
= 25°C)
Reverse Recovery Time
I
F
= 3.0 A, V
R
= 30 V, dl/dt = 50 A/ms, T
J
= 25°C
Reverse Recovery Time
I
F
= 3.0 A, V
R
= 30 V, dl/dt = 50 A/ms, T
J
= 50°C
v
F
0.76
0.935
0.86
1.02
i
R
6.00
0.012
t
rr
t
rr
18
40
35
0.5
25
50
ns
ns
0.85
1.0
0.91
1.090
mA
V
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
1. Pulse Test: Pulse Width = 300
ms,
Duty Cycle
≤
2.0%.
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2
NHP620MFD, NRVHP620MFD
TYPICAL CHARACTERISTICS
100
i
F
, INSTANTANEOUS FORWARD
CURRENT (A)
T
A
= 175°C
10
T
A
= 150°C
T
A
= 125°C
1
100
i
F
, INSTANTANEOUS FORWARD
CURRENT (A)
T
A
= 175°C
10
T
A
= 150°C
1
T
A
= 125°C
0.1
T
A
= 25°C
0.1
T
A
= 25°C
0.01
T
A
= −40°C
0.1
0.3
0.5
0.7
0.9
1.1
1.3
0.01
T
A
= −40°C
0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
0.001
0.001
V
F
, INSTANTANEOUS FORWARD VOLTAGE (V)
V
F
, INSTANTANEOUS FORWARD VOLTAGE (V)
I
R
, INSTANTANEOUS REVERSE CURRENT (A)
1.E−03
1.E−04
T
A
= 175°C
I
R
, INSTANTANEOUS REVERSE CURRENT (A)
Figure 1. Typical Instantaneous Forward
Characteristics
Figure 2. Maximum Instantaneous Forward
Characteristics
T
A
= 175°C
1.E−03
1.E−04
1.E−05
1.E−06
1.E−07
T
A
= 150°C
T
A
= 125°C
1.E−05
1.E−06
T
A
= 150°C
T
A
= 125°C
1.E−07
1.E−08
1.E−09
T
A
= 25°C
1.E−08
1.E−09
1.E−10
1.E−11
0
20
40
60
80
T
A
= 25°C
T
A
= −40°C
T
A
= −40°C
1.E−11
0
20
40
60
80
100 120 140 160 180 200
V
R
, INSTANTANEOUS REVERSE VOLTAGE (V)
1.E−10
1.E−12
100 120 140 160 180 200
V
R
, INSTANTANEOUS REVERSE VOLTAGE (V)
Figure 3. Typical Reverse Characteristics
1000
C, JUNCTION CAPACITANCE (pF)
T
J
= 25°C
I
F(AV)
, AVERAGE FORWARD CURRENT (A)
6
5
4
Figure 4. Maximum Reverse Characteristics
DC
Square Wave
3
2
1
0
0
20
40
60
80
100
120
140
160 180
T
C
, CASE TEMPERATURE (°C)
R
qJC
= 3.4°C/W
100
10
0
20
40
60
80
100 120 140 160 180
200
V
R
, REVERSE VOLTAGE (V)
Figure 5. Typical Junction Capacitance
Figure 6. Current Derating
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3
NHP620MFD, NRVHP620MFD
TYPICAL CHARACTERISTICS
3.0
I
PK
/I
AV
= 20
P
F(AV)
, AVERAGE FORWARD
POWER DISSIPATION (W)
2.5
I
PK
/I
AV
= 5
2.0
1.5
1.0
0.5
0
0
0.5
1.0
1.5
2.0
I
F(AV)
, AVERAGE FORWARD CURRENT (A)
Square Wave
DC
I
PK
/I
AV
= 10
T
J
= 175°C
Figure 7. Forward Power Dissipation
100
50% Duty Cycle
10
R(t) (°C/W)
20%
10%
5%
2%
1%
0.1
Single Pulse
0.01
0.001
0.000001
0.00001
0.0001
0.001
0.01
PULSE TIME (sec)
0.1
1
10
100
1000
1
Figure 8. Thermal Response
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4
NHP620MFD, NRVHP620MFD
PACKAGE DIMENSIONS
DFN8 5x6, 1.27P Dual Flag (SO8FL−Dual)
CASE 506BT
ISSUE E
0.20 C
D
D1
8
7
6
5
2X
A
B
2X
0.20 C
NOTES:
1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994.
2. CONTROLLING DIMENSION: MILLIMETERS.
3. DIMENSION b APPLIES TO PLATED TERMINAL AND IS MEASURED
BETWEEN 0.15 AND 0.30 MM FROM THE TERMINAL TIP.
4. PROFILE TOLERANCE APPLIES TO THE EXPOSED PAD AS WELL
AS THE TERMINALS.
5. DIMENSIONS D1 AND E1 DO NOT INCLUDE MOLD FLASH,
PROTRUSIONS, OR GATE BURRS.
6. SEATING PLANE IS DEFINED BY THE TERMINALS. A1 IS DEFINED
AS THE DISTANCE FROM THE SEATING PLANE TO THE LOWEST
POINT ON THE PACKAGE BODY.
7. A VISUAL INDICATOR FOR PIN 1 MUST BE LOCATED IN THIS AREA.
4X
0.10 C
A
0.10 C
NOTE 4
DETAIL B
4X
M
N
4X
G
BOTTOM VIEW
ON Semiconductor and the
are registered trademarks of Semiconductor Components Industries, LLC (SCILLC) or its subsidiaries in the United States and/or other countries.
SCILLC owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of SCILLC’s product/patent coverage may be accessed
at www.onsemi.com/site/pdf/Patent−Marking.pdf. SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation
or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and
specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets
and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each
customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended,
or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which
the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or
unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and
expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim
alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable
copyright laws and is not for resale in any manner.
PUBLICATION ORDERING INFORMATION
LITERATURE FULFILLMENT:
Literature Distribution Center for ON Semiconductor
P.O. Box 5163, Denver, Colorado 80217 USA
Phone:
303−675−2175 or 800−344−3860 Toll Free USA/Canada
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For additional information, please contact your local
Sales Representative
ÉÉ
ÉÉ
1
2
PIN ONE
IDENTIFIER
NOTE 7
E1 E
h
c
3
4
A1
TOP VIEW
DETAIL A
C
DETAIL A
SEATING
PLANE
NOTE 6
SIDE VIEW
D2
D3
e
1
4
4X
L
K
DETAIL B
ALTERNATE
CONSTRUCTION
8X
SOLDERING FOOTPRINT*
4.56
2X
DIM
A
A1
b
b1
c
D
D1
D2
D3
E
E1
E2
e
G
h
K
K1
L
M
N
MILLIMETERS
MIN
MAX
MAX
0.90
1.10
−−−
−−−
−−−
0.05
0.33
0.42
0.51
0.33
0.42
0.51
0.20
−−−
0.33
5.15 BSC
4.70
4.90
5.10
3.90
4.10
4.30
1.50
1.70
1.90
6.15 BSC
5.70
5.90
6.10
3.90
4.15
4.40
1.27 BSC
0.45
0.55
0.65
−−−
−−−
12
_
0.51
−−−
−−−
0.56
−−−
−−−
0.48
0.61
0.71
3.25
3.50
3.75
1.80
2.00
2.20
2X
0.75
2.08
0.56
b1
E2
4X
4.84
8
5
8X
b
0.10
0.05
C A B
C
NOTE 3
2.30
1.40
3.70
6.59
K1
0.70
1.00
1.27
PITCH
5.55
DIMENSION: MILLIMETERS
4X
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
