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NTS10120EMFS,

NRVTS10120EMFS

Very Low Leakage

Trench-based Schottky

Rectifier

http://onsemi.com

Features

•

Fine Lithography Trench−based Schottky Technology for Very Low

•

Forward Voltage and Low Leakage

Fast Switching with Exceptional Temperature Stability

Low Power Loss and Lower Operating Temperature

Higher Efficiency for Achieving Regulatory Compliance

Low Thermal Resistance

High Surge Capability

NRV Prefix for Automotive and Other Applications Requiring

Unique Site and Control Change Requirements; AEC−Q101

Qualified and PPAP Capable

These are Pb−Free and Halide−Free Devices

TRENCH SCHOTTKY

RECTIFIERS

10 AMPERES

120 VOLTS

1,2,3

5,6

MARKING

DIAGRAM

TE1012

AYWWZZ

Typical Applications

Not Used

•

Switching Power Supplies including Notebook / Netbook Adapters,

•

ATX and Flat Panel Display

High Frequency and DC−DC Converters

Freewheeling and OR−ing Diodes

Reverse Battery Protection

LED Lighting

Instrumentation

SO−8 FLAT LEAD

CASE 488AA

STYLE 2

TE1012

= Specific Device Code

= Assembly Location

= Year

= Work Week

= Lot Traceability

Mechanical Characteristics:

Case: Epoxy, Molded

Epoxy Meets Flammability Rating UL 94−0 @ 0.125 in.

Lead Finish: 100% Matte Sn (Tin)

Lead and Mounting Surface Temperature for Soldering Purposes:

260°C Max. for 10 Seconds

•

Device Meets MSL 1 Requirements

ORDERING INFORMATION

Device

NTS10120EMFST1G

NTS10120EMFST3G

NRVTS10120EMFST1G

NRVTS10120EMFST3G

Package

SO−8 FL

(Pb−Free)

SO−8 FL

(Pb−Free)

SO−8 FL

(Pb−Free)

SO−8 FL

(Pb−Free)

Shipping†

1500 /

Tape & Reel

5000 /

Tape & Reel

1500 /

Tape & Reel

5000 /

Tape & Reel

†For information on tape and reel specifications,

including part orientation and tape sizes, please

refer to our Tape and Reel Packaging Specification

Brochure, BRD8011/D.

Semiconductor Components Industries, LLC, 2014

June, 2014 − Rev. 0

Publication Order Number:

NTS10120EMFS/D

NTS10120EMFS, NRVTS10120EMFS

MAXIMUM RATINGS

Rating

Peak Repetitive Reverse Voltage

Working Peak Reverse Voltage

DC Blocking Voltage

Average Rectified Forward Current

(Rated V

, T

= 165°C)

Peak Repetitive Forward Current,

(Rated V

, Square Wave, 20 kHz, T

= 163°C)

Non−Repetitive Peak Surge Current

(Surge Applied at Rated Load Conditions Halfwave, Single Phase, 60 Hz)

Storage Temperature Range

Operating Junction Temperature

Unclamped Inductive Switching Energy (10 mH Inductor, Non−repetitive)

ESD Rating (Human Body Model)

ESD Rating (Machine Model)

Symbol

RRM

RWM

F(AV)

FRM

FSM

stg

Value

Unit

120

200

−65 to +175

−55 to +175

100

°C

Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality

should not be assumed, damage may occur and reliability may be affected.

THERMAL CHARACTERISTICS

Characteristic

Thermal Resistance, Junction−to−Case, Steady State

(Assumes 600 mm

1 oz. copper bond pad, on a FR4 board)

Symbol

θJC

Typ

1.8

Max

−

Unit

°C/W

ELECTRICAL CHARACTERISTICS

Rating

Instantaneous Forward Voltage (Note 1)

= 5 A, T

= 25°C)

= 10 A, T

= 25°C)

= 5 A, T

= 125°C)

= 10 A, T

= 125°C)

Instantaneous Reverse Current (Note 1)

= 90 V, T

= 25°C)

(Rated dc Voltage, T

= 25°C)

= 90 V, T

= 125°C)

(Rated dc Voltage, T

= 125°C)

1.0

3.75

2.0

3.1

−

Symbol

0.6

0.735

0.515

0.588

−

0.82

−

0.63

Typ

Max

Unit

Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product

performance may not be indicated by the Electrical Characteristics if operated under different conditions.

1. Pulse Test: Pulse Width = 300

ms,

Duty Cycle

≤

2.0%.

http://onsemi.com

NTS10120EMFS, NRVTS10120EMFS

TYPICAL CHARACTERISTICS

100

, INSTANTANEOUS FORWARD

CURRENT (A)

= 125°C

= 150°C

100

, INSTANTANEOUS FORWARD

CURRENT (A)

= 125°C

= 150°C

= 175°C

= 25°C

= −55°C

0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2 1.3

, INSTANTANEOUS FORWARD VOLTAGE (V)

= 175°C

= 25°C

= −55°C

0.1

0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2 1.3

, INSTANTANEOUS FORWARD VOLTAGE (V)

, INSTANTANEOUS REVERSE CURRENT (A)

1.E+00

1.E−01

1.E−02

1.E−03

1.E−04

1.E−05

1.E−06

1.E−07

, INSTANTANEOUS REVERSE VOLTAGE (V)

= 25°C

, INSTANTANEOUS REVERSE CURRENT (A)

Figure 1. Typical Instantaneous Forward

Characteristics

Figure 2. Maximum Instantaneous Forward

Characteristics

= 175°C

= 150°C

= 125°C

1.E+00

1.E−01

1.E−02

1.E−03

1.E−04

= 25°C

1.E−05

1.E−06

1.E−07

90 100 110 120

, INSTANTANEOUS REVERSE VOLTAGE (V)

= 175°C

= 150°C

= 125°C

90 100 110 120

Figure 3. Typical Reverse Characteristics

10,000

C, JUNCTION CAPACITANCE (pF)

= 25°C

F(AV)

, AVERAGE FORWARD CURRENT (A)

Figure 4. Maximum Reverse Characteristics

qJC

= 1.8°C/W

Square Wave

1000

100

110

120

130

140

150

160

170

, CASE TEMPERATURE (°C)

0.1

100

, REVERSE VOLTAGE (V)

Figure 5. Typical Junction Capacitance

Figure 6. Current Derating

http://onsemi.com

NTS10120EMFS, NRVTS10120EMFS

TYPICAL CHARACTERISTICS

= 20

= 10

= 175°C

= 5

F(AV)

, AVERAGE FORWARD

POWER DISSIPATION (W)

Square Wave

F(AV)

, AVERAGE FORWARD CURRENT (A)

Figure 7. Forward Power Dissipation

100

50% Duty Cycle

R(t) (°C/W)

20%

10%

Assumes 25°C ambient and soldered to

a 600 mm

− oz copper pad on PCB

0.1

Single Pulse

0.000001

0.00001

0.0001

0.001

0.01

0.1

100

1000

0.01

PULSE TIME (sec)

Figure 8. Typical Thermal Characteristics

R(t) (°C/W)

1 50% Duty Cycle

20%

10%

0.1 5%

Single Pulse

0.000001

0.00001

0.0001

0.001

0.01

0.1

100

1000

0.01

PULSE TIME (sec)

Figure 9. Typical Transient Thermal Response Characteristics, Junction−to−Case

http://onsemi.com

NTS10120EMFS, NRVTS10120EMFS

PACKAGE DIMENSIONS

0.20 C

DFN5 5x6, 1.27P

(SO−8FL)

CASE 488AA

ISSUE H

NOTES:

1. DIMENSIONING AND TOLERANCING PER

ASME Y14.5M, 1994.

2. CONTROLLING DIMENSION: MILLIMETER.

3. DIMENSION D1 AND E1 DO NOT INCLUDE

MOLD FLASH PROTRUSIONS OR GATE

BURRS.

MILLIMETERS

MIN

NOM

MAX

0.90

1.00

1.10

0.00

−−−

0.05

0.33

0.41

0.51

0.23

0.28

0.33

5.15 BSC

4.70

4.90

5.10

3.80

4.00

4.20

6.15 BSC

5.70

5.90

6.10

3.45

3.65

3.85

1.27 BSC

0.51

0.61

0.71

1.20

1.35

1.50

0.51

0.61

0.71

0.05

0.17

0.20

3.00

3.40

3.80

−−−

0.20 C

TOP VIEW

SEATING

PLANE

0.10 C

SIDE VIEW

DETAIL A

DIM

DETAIL A

SOLDERING FOOTPRINT*

STYLE 2:

PIN 1. ANODE

2. ANODE

3. ANODE

4. NO CONNECT

5. CATHODE

e/2

1.270

0.750

1.000

0.10

0.05

C A B

0.965

1.330

0.905

4.530

0.475

PIN 5

(EXPOSED PAD)

0.495

3.200

BOTTOM VIEW

1.530

4.560

*For additional information on our Pb−Free strategy and soldering

details, please download the ON Semiconductor Soldering and

Mounting Techniques Reference Manual, SOLDERRM/D.

ON Semiconductor

and

are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC owns the rights to a number of patents, trademarks,

copyrights, trade secrets, and other intellectual property. A listing of SCILLC’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. SCILLC

reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any

particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without

limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications

and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC

does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for

surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where

personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and

its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly,

any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture

of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.

PUBLICATION ORDERING INFORMATION

LITERATURE FULFILLMENT:

Literature Distribution Center for ON Semiconductor

P.O. Box 5163, Denver, Colorado 80217 USA

Phone:

303−675−2175 or 800−344−3860 Toll Free USA/Canada

Fax:

303−675−2176 or 800−344−3867 Toll Free USA/Canada

Email:

orderlit@onsemi.com

N. American Technical Support:

800−282−9855 Toll Free

USA/Canada

Europe, Middle East and Africa Technical Support:

Phone: 421 33 790 2910

Japan Customer Focus Center

Phone: 81−3−5817−1050

ON Semiconductor Website: www.onsemi.com

Order Literature:

http://www.onsemi.com/orderlit

For additional information, please contact your local

Sales Representative

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NTS10120EMFS/D

型号	NRVTS10120EMFST3G	NTS10120EMFST3G
描述	Schottky Diodes & Rectifiers LOW LEAKAGE 10A 120V TR	Schottky Diodes & Rectifiers LOW LEAK 10A 120V TR
Brand Name	ON Semiconductor	ON Semiconductor
是否无铅	不含铅	不含铅
厂商名称	ON Semiconductor(安森美)	ON Semiconductor(安森美)
包装说明	SO-8FL, DFN5, 6 PIN	SO-8FL, DFN5, 6 PIN
制造商包装代码	488AA	488AA
Reach Compliance Code	not_compliant	not_compliant
ECCN代码	EAR99	EAR99
Factory Lead Time	5 weeks	5 weeks
其他特性	FREE WHEELING DIODE, LOW POWER LOSS	FREE WHEELING DIODE, LOW POWER LOSS
应用	EFFICIENCY	EFFICIENCY
外壳连接	CATHODE	CATHODE
配置	SINGLE	SINGLE
二极管元件材料	SILICON	SILICON
二极管类型	RECTIFIER DIODE	RECTIFIER DIODE
最大正向电压 (VF)	0.82 V	0.82 V
JESD-30 代码	R-PDSO-F5	R-PDSO-F5
JESD-609代码	e3	e3
湿度敏感等级	1	1
最大非重复峰值正向电流	200 A	200 A
元件数量	1	1
相数	1	1
端子数量	5	5
最高工作温度	175 °C	175 °C
最低工作温度	-55 °C	-55 °C
最大输出电流	10 A	10 A
封装主体材料	PLASTIC/EPOXY	PLASTIC/EPOXY
封装形状	RECTANGULAR	RECTANGULAR
封装形式	SMALL OUTLINE	SMALL OUTLINE
最大重复峰值反向电压	120 V	120 V
最大反向电流	30 µA	30 µA
表面贴装	YES	YES
技术	SCHOTTKY	SCHOTTKY
端子面层	Tin (Sn)	Tin (Sn)
端子形式	FLAT	FLAT
端子位置	DUAL	DUAL