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NSB8KT-E3/31

Rectifier Diode, 1 Phase, 1 Element, 8A, 800V V(RRM), Silicon, TO-263AB, ROHS COMPLIANT, PLASTIC PACKAGE-3

器件类别:分立半导体    二极管   

厂商名称:Vishay(威世)

厂商官网:http://www.vishay.com

器件标准:

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器件参数
参数名称
属性值
是否Rohs认证
符合
厂商名称
Vishay(威世)
零件包装代码
D2PAK
包装说明
R-PSSO-G2
针数
3
Reach Compliance Code
unknown
ECCN代码
EAR99
其他特性
FREE WHEELING DIODE
应用
GENERAL PURPOSE
外壳连接
CATHODE
配置
SINGLE
二极管元件材料
SILICON
二极管类型
RECTIFIER DIODE
JEDEC-95代码
TO-263AB
JESD-30 代码
R-PSSO-G2
JESD-609代码
e3
湿度敏感等级
1
最大非重复峰值正向电流
125 A
元件数量
1
相数
1
端子数量
2
最大输出电流
8 A
封装主体材料
PLASTIC/EPOXY
封装形状
RECTANGULAR
封装形式
SMALL OUTLINE
峰值回流温度(摄氏度)
245
认证状态
Not Qualified
最大重复峰值反向电压
800 V
表面贴装
YES
端子面层
MATTE TIN
端子形式
GULL WING
端子位置
SINGLE
处于峰值回流温度下的最长时间
NOT SPECIFIED
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NS(F,B)8AT thru NS(F,B)8MT
Vishay General Semiconductor
Glass Passivated General Purpose Plastic Rectifier
TO-220AC
ITO-220AC
FEATURES
• Glass passivated chip junction
• Low forward voltage drop
• High forward surge capability
2
1
NS8xT
PIN 1
PIN 2
2
1
NSF8xT
PIN 1
• Meets MSL level 1, per J-STD-020C, LF max peak
of 245 °C (for TO-263AB package)
• Solder Dip 260 °C, 40 seconds (for TO-220AC &
ITO-220AC package)
• Component in accordance to RoHS 2002/95/EC
and WEEE 2002/96/EC
TYPICAL APPLICATIONS
CASE
PIN 2
TO-263AB
K
2
1
NSB8xT
PIN 1
PIN 2
K
HEATSINK
For use in general purpose rectification of power
supplies, inverters, converters and freewheeling
diodes application.
MECHANICAL DATA
Case:
TO-220AC, ITO-220AC, TO-263AB
MAJOR RATINGS AND CHARACTERISTICS
I
F(AV)
V
RRM
I
FSM
V
F
T
j
max
8.0 A
50 V to 1000 V
125 A
1.1 V
150 °C
Epoxy meets UL 94V-0 flammability rating
Terminals:
Matte tin plated leads, solderable per
J-STD-002B and JESD22-B102D
E3 suffix for commercial grade, HE3 suffix for high
reliability grade (AEC Q101 qualified)
Polarity:
As marked
Mounting Torque:
10 in-lbs maximum
MAXIMUM RATINGS
(T
A
= 25 °C unless otherwise noted)
PARAMETER
Maximum repetitive peak reverse voltage
Maximum RMS voltage
Maximum DC blocking voltage
Maximum average forward rectified current at T
C
= 100 °C
Peak forward surge current 8.3 ms single sine-wave
superimposed on rated load
Operating junction and storage temperature range
Isolation voltage (ITO-220AC only)
From terminal to heatsink t = 1 minute
SYMBOL NS8AT NS8BT NS8DT NS8GT NS8JT NS8KT NS8MT UNIT
V
RRM
V
RMS
V
DC
I
F(AV)
I
FSM
T
J
, T
STG
V
AC
50
35
50
100
70
100
200
140
200
400
280
400
8.0
125
- 55 to + 150
1500
600
420
600
800
560
800
1000
700
1000
V
V
V
A
A
°C
V
Document Number 88690
27-Jun-06
www.vishay.com
1
NS(F,B)8AT thru NS(F,B)8MT
Vishay General Semiconductor
ELECTRICAL CHARACTERISTICS
(T
A
= 25 °C unless otherwise noted)
PARAMETER
Maximum
instantaneous
forward voltage
(1)
Maximum DC
reverse current at
rated DC blocking
voltage
Typical junction
capacitance
Note:
(1) Pulse test: 300 µs pulse width, 1 % duty cycle
TEST CONDITIONS
at 8.0 A
T
j
= 25 °C
SYMBOL
V
F
NS8AT
NS8BT
NS8DT
NS8GT
1.1
NS8JT
NS8KT
NS8MT
UNIT
V
T
j
= 25 °C
T
j
= 100 °C
I
R
10
100
µA
at 4.0 V, 1 MHz
C
J
55
pF
THERMAL CHARACTERISTICS
(T
A
= 25 °C unless otherwise noted)
PARAMETER
Typical thermal resistance from junction to case
SYMBOL
R
θJC
NSxT
3.0
NSFxT
5.0
NSBxT
3.0
UNIT
°C/W
ORDERING INFORMATION
PACKAGE
TO-220AC
ITO-220AC
TO-263AB
TO-263AB
PREFERRED P/N
NS8JT-E3/45
NSF8JT-E3/45
NSB8JT-E3/45
NSB8JT-E3/81
UNIT WEIGHT (g)
1.80
1.95
1.77
1.77
PACKAGE CODE
45
45
45
81
BASE QUANTITY
50/Tube
50/Tube
50/Tube
800/Reel
DELIVERY MODE
Tube
Tube
Tube
Tape Reel
RATINGS AND CHARACTERISTICS CURVES
(T
A
= 25 °C unless otherwise noted)
10
60 Hz Resistive or Inductive Load
175
Peak Forward Surge Current (A)
Average Forward Current (A)
150
125
100
75
50
25
0
T
j
= T
j
max.
8.3
ms Single Half Sine-Wave
8.0
6.0
1.0 Cycle
4.0
2.0
0
0
50
100
150
1
10
100
Case Temperature (°C)
Number
of Cycles at 60 Hz
Figure 1. Forward Current Derating Curve
Figure 2. Maximum Non-Repetitive Peak Forward Surge Current
www.vishay.com
2
Document Number 88690
27-Jun-06
NS(F,B)8AT thru NS(F,B)8MT
Vishay General Semiconductor
100
120
Pulse
Width
= 300
µs
1
%
Duty Cycle
Instantaneous Forward Current (A)
10
Junction Capacitance (pF)
100
T
j
= 25 °C
f = 1.0 MHz
V
sig
= 50 mVp-p
80
60
40
1
20
0.1
0.6
0
0.8
1.0
1.2
1.4
1.6
1.8
2.0
0.1
1
10
100
1000
Instantaneous Forward
Voltage
(V)
Reverse
Voltage
(V)
Figure 3. Typical Instantaneous Forward Characteristics
Figure 5. Typical Junction Capacitance Per Leg
100
Instantaneous Reverse Current (µA)
10
T
j
= 100 °C
1
T
j
= 75 °C
T
j
= 25 °C
0.1
0
20
40
60
80
100
Percent of Rated Peak Reverse
Voltage
(%)
Figure 4. Typical Reverse Characteristics
Document Number 88690
27-Jun-06
www.vishay.com
3
NS(F,B)8AT thru NS(F,B)8MT
Vishay General Semiconductor
PACKAGE OUTLINE DIMENSIONS
in inches (millimeters)
TO-220AC
0.415 (10.54)MAX.
0.370 (9.40)
0.360 (9.14)
0.154 (3.91)
DIA.
0.148 (3.74)
0.113 (2.87)
0.103 (2.62)
0.145 (3.68)
0.135 (3.43)
0.350 (8.89)
0.330 (8.38)
1.148 (29.16)
1.118 (28.40)
0.110 (2.79)
0.100 (2.54)
PIN 1
PIN 2
CASE
ITO-220AC
0.185 (4.70)
0.175 (4.44)
0.055 (1.39)
0.045 (1.14)
0.404
0.384
0.076
(1.93)
45° Ref.
(10.26)
(9.75)
Ref.
ref.
See note
See note
0.190 (4.83)
0.170 (4.32)
0.110 (2.79)
0.100 (2.54)
7° Ref.
0.076 Ref.
(1.93) Ref. 0.140 (3.56) DIA.
0.125 (3.17) DIA.
0.671 (17.04)
7° Ref.
0.651 (16.54)
0.350 (8.89)
0.330 (8.38)
0.135 (3.43) DIA.
0.122 (3.08) DIA.
0.635 (16.13)
0.625 (15.87)
0.603 (15.32)
0.573 (14.55)
0.600 (15.24)
0.580 (14.73)
PIN
2
1
Copper exposure
0.010 (0.25) Max.
1
0.160 (4.06)
0.140 (3.56)
0.057 (1.45)
0.045 (1.14)
PIN
2
7° Ref.
0.191 (4.85)
0.171 (4.35)
0.560 (14.22)
0.530 (13.46)
0.057 (1.45)
0.045 (1.14)
0.110 (2.79)
0.100 (2.54)
0.560 (14.22)
0.530 (13.46)
0.105 (2.67)
0.095 (2.41)
0.037 (0.94)
0.027(0.68)
0.205(5.20)
0.195(4.95)
0.022(0.56)
0.014(0.36)
0.025 (0.64)
0.015 (0.38)
0.035 (0.89)
0.025 (0.64)
0.205 (5.21)
0.195 (4.95)
0.028 (0.71)
0.020 (0.51)
Note:
Copper exposure is allowable for 0.005 (0.13) Max. from the
body
TO-263AB
0.41 (10.45)
1
0.380 (9.65)
0.245 (6.22)
MIN
K
0.360 (9.14)
0.320 (8.13)
1
K
2
0.190 (4.83)
0.160 (4.06)
0.055 (1.40)
0.045 (1.14)
Mounting Pad Layout
0.42
MIN.
(10.66)
0.624 (15.85)
0.591(15.00)
0.055 (1.40)
0.047 (1.19)
0.670 (17.02)
0.591 (15.00)
0.33
(8.38)
MIN.
0-0.01 (0-0.254)
0.110 (2.79)
0.090 (2.29)
0.021 (0.53)
0.014 (0.36)
0.140 (3.56)
0.110 (2.79)
0.037 (0.940)
0.027 (0.686)
0.105 (2.67)
0.095 (2.41)
0.205 (5.20)
0.195 (4.95)
0.15
(3.81)
MIN.
0.08
MIN.
(2.032)
0.105 (2.67)
(0.095) (2.41)
www.vishay.com
4
Document Number 88690
27-Jun-06
Legal Disclaimer Notice
Vishay
Notice
Specifications of the products displayed herein are subject to change without notice. Vishay Intertechnology, Inc.,
or anyone on its behalf, assumes no responsibility or liability for any errors or inaccuracies.
Information contained herein is intended to provide a product description only. No license, express or implied, by
estoppel or otherwise, to any intellectual property rights is granted by this document. Except as provided in Vishay's
terms and conditions of sale for such products, Vishay assumes no liability whatsoever, and disclaims any express
or implied warranty, relating to sale and/or use of Vishay products including liability or warranties relating to fitness
for a particular purpose, merchantability, or infringement of any patent, copyright, or other intellectual property right.
The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications.
Customers using or selling these products for use in such applications do so at their own risk and agree to fully
indemnify Vishay for any damages resulting from such improper use or sale.
Document Number: 91000
Revision: 08-Apr-05
www.vishay.com
1
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参数对比
与NSB8KT-E3/31相近的元器件有:NSB8DT-E3/31、NSB8AT-E3/31、NSB8BT-E3/31。描述及对比如下:
型号 NSB8KT-E3/31 NSB8DT-E3/31 NSB8AT-E3/31 NSB8BT-E3/31
描述 Rectifier Diode, 1 Phase, 1 Element, 8A, 800V V(RRM), Silicon, TO-263AB, ROHS COMPLIANT, PLASTIC PACKAGE-3 Rectifier Diode, 1 Phase, 1 Element, 8A, 200V V(RRM), Silicon, TO-263AB, ROHS COMPLIANT, PLASTIC PACKAGE-3 Rectifier Diode, 1 Phase, 1 Element, 8A, 50V V(RRM), Silicon, TO-263AB, ROHS COMPLIANT, PLASTIC PACKAGE-3 Rectifier Diode, 1 Phase, 1 Element, 8A, 100V V(RRM), Silicon, TO-263AB, ROHS COMPLIANT, PLASTIC PACKAGE-3
是否Rohs认证 符合 符合 符合 符合
厂商名称 Vishay(威世) Vishay(威世) Vishay(威世) Vishay(威世)
零件包装代码 D2PAK D2PAK D2PAK D2PAK
包装说明 R-PSSO-G2 R-PSSO-G2 R-PSSO-G2 R-PSSO-G2
针数 3 3 3 3
Reach Compliance Code unknown unknown unknown unknown
ECCN代码 EAR99 EAR99 EAR99 EAR99
其他特性 FREE WHEELING DIODE FREE WHEELING DIODE FREE WHEELING DIODE FREE WHEELING DIODE
应用 GENERAL PURPOSE GENERAL PURPOSE GENERAL PURPOSE GENERAL PURPOSE
外壳连接 CATHODE CATHODE CATHODE CATHODE
配置 SINGLE SINGLE SINGLE SINGLE
二极管元件材料 SILICON SILICON SILICON SILICON
二极管类型 RECTIFIER DIODE RECTIFIER DIODE RECTIFIER DIODE RECTIFIER DIODE
JEDEC-95代码 TO-263AB TO-263AB TO-263AB TO-263AB
JESD-30 代码 R-PSSO-G2 R-PSSO-G2 R-PSSO-G2 R-PSSO-G2
JESD-609代码 e3 e3 e3 e3
湿度敏感等级 1 1 1 1
最大非重复峰值正向电流 125 A 125 A 125 A 125 A
元件数量 1 1 1 1
相数 1 1 1 1
端子数量 2 2 2 2
最大输出电流 8 A 8 A 8 A 8 A
封装主体材料 PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY
封装形状 RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR
封装形式 SMALL OUTLINE SMALL OUTLINE SMALL OUTLINE SMALL OUTLINE
峰值回流温度(摄氏度) 245 245 245 245
认证状态 Not Qualified Not Qualified Not Qualified Not Qualified
最大重复峰值反向电压 800 V 200 V 50 V 100 V
表面贴装 YES YES YES YES
端子面层 MATTE TIN MATTE TIN MATTE TIN MATTE TIN
端子形式 GULL WING GULL WING GULL WING GULL WING
端子位置 SINGLE SINGLE SINGLE SINGLE
处于峰值回流温度下的最长时间 NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED
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器件捷径:
A0 A1 A2 A3 A4 A5 A6 A7 A8 A9 AA AB AC AD AE AF AG AH AI AJ AK AL AM AN AO AP AQ AR AS AT AU AV AW AX AY AZ B0 B1 B2 B3 B4 B5 B6 B7 B8 B9 BA BB BC BD BE BF BG BH BI BJ BK BL BM BN BO BP BQ BR BS BT BU BV BW BX BY BZ C0 C1 C2 C3 C4 C5 C6 C7 C8 C9 CA CB CC CD CE CF CG CH CI CJ CK CL CM CN CO CP CQ CR CS CT CU CV CW CX CY CZ D0 D1 D2 D3 D4 D5 D6 D7 D8 D9 DA DB DC DD DE DF DG DH DI DJ DK DL DM DN DO DP DQ DR DS DT DU DV DW DX DZ
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