NSM80100MT1G
PNP Transistor with Dual
Series Switching Diode
Features
•
These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
Typical Applications
•
LCD Control Board
•
High Speed Switching
•
High Voltage Switching
MAXIMUM RATINGS
−
PNP TRANSISTOR
Rating
Collector
−Emitter
Voltage
Collector
−Base
Voltage
Emitter
−Base
Voltage
Collector Current
−
Continuous
Symbol
V
CEO
V
CBO
V
EBO
I
C
Value
−80
−80
−4.0
−500
Unit
Vdc
Vdc
Vdc
mAdc
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PNP Transistor with Dual Series
Switching Diode
6
D1
5
4
D2
Q1
MAXIMUM RATINGS
−
SWITCHING DIODE
Rating
Reverse Voltage
Forward Current
Non−Repetitive Peak Forward Current
(Square Wave, T
J
= 25°C prior to
surge)
t < 1 sec
t = 1
msec
Operating and Storage Junction
Temperature Range
Symbol
V
R
I
F
I
FSM
1.0
20
T
J
, T
stg
−55
to +150
°C
Value
100
200
Unit
V
mA
A
4
6 5
1 2
1
2
3
3
SC−74
CASE 318F
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
MARKING DIAGRAM
ESD RATINGS
Rating
Electrostatic Discharge
HBM
MM
Class
3A
M4
Value
4000 V
≤
Failure < 8000 V
Failure > 400 V
3PN
M
G
3PN MG
G
THERMAL CHARACTERISTICS
Rating
Total Device Dissipation FR−5 Board,
(Note 1) @ T
A
= 25°C
Derate above 25°C
Thermal Resistance from
Junction−to−Ambient (Note 1)
Total Device Dissipation FR−5 Board
(Note 2) T
A
= 25°C
Derate above 25°C
Thermal Resistance,
Junction−to−Ambient (Note 2)
Junction and Storage
Temperature Range
1. FR−5 = 650 mm
2
pad, 2.0 oz Cu.
2. FR−5 = 10 mm
2
pad, 2.0 oz Cu.
©
Semiconductor Components Industries, LLC, 2013
= Device Code
= Date Code*
= Pb−Free Package
Symbol
P
D
Max
400
313
Unit
mW
mW/°C
°C/W
(Note: Microdot may be in either location)
*Date Code orientation may vary depending
upon manufacturing location.
R
qJA
P
D
ORDERING INFORMATION
Device
Package
SC−74
(Pb−Free)
Shipping
†
3000 /
Tape & Reel
270
463
−55
to +150
mW
mW/°C
°C/W
°C
NSM80100MT1G
R
qJA
T
J
, T
stg
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
December, 2013
−
Rev. 3
1
Publication Order Number:
NSM80100M/D
NSM80100MT1G
Q1: PNP TRANSISTOR
ELECTRICAL CHARACTERISTICS
(T
A
= 25°C unless otherwise noted)
Characteristic
OFF CHARACTERISTICS
Collector
−Emitter
Breakdown Voltage (Note 3)
Emitter
−Base
Breakdown Voltage
Collector Cutoff Current
Collector Cutoff Current
ON CHARACTERISTICS
(Note 3)
DC Current Gain
Collector
−Emitter
Saturation Voltage
Base
−Emitter
Saturation Voltage
SMALL−SIGNAL CHARACTERISTICS
Current
−Gain −
Bandwidth Product (Note 4)
(I
C
=
−100
mA, V
CE
=
−2.0
V, f = 100 MHz)
3. Pulse Test: Pulse Width
≤
300
ms,
Duty Cycle
≤
2.0%.
4. fT is defined as the frequency at which |h
fe
| extrapolates to unity.
f
T
150
−
MHz
(I
C
=
−10
mA, V
CE
=
−1.0
V)
(I
C
=
−100
mA, I
B
=
−10
mA)
(I
C
=
−100
mA, V
CE
=
−1.0
V)
h
FE
V
CE(sat)
V
BE(sat)
120
−
−
−
−0.25
−1.2
−
V
V
(I
C
=
−1.0
mA, I
B
= 0)
(I
E
=
−100
mA,
I
C
= 0)
(V
CE
=
−60
V, I
B
= 0)
(V
CB
=
−80
V, I
E
= 0)
V
(BR)CEO
V
(BR)EBO
I
CES
I
CBO
−80
−4.0
−
−
−
−
−0.1
−0.1
V
V
mA
mA
Symbol
Min
Max
Unit
D1, D2: SWITCHING DIODE
(T
A
= 25°C unless otherwise noted)
Characteristic
OFF CHARACTERISTICS
Reverse Breakdown Voltage
Reverse Voltage Leakage Current
V
(BR)
I
R
75
−
−
−
−
−
−
−
−
−
−
−
1.0
30
100
1.5
715
855
1000
1250
4.0
1.75
V
mA
Symbol
Min
Max
Unit
(V
R
= 75 V)
(V
R
= 20 V, T
J
= 150°C)
(V
R
= 75 V, T
J
= 150°C)
(V
R
= 0 V, f = 1.0 MHz)
(I
F
= 1.0 mA)
(I
F
= 10 mA)
(I
F
= 50 mA)
(I
F
= 150 mA)
(I
F
= I
R
= 10 mA, i
R(REC)
= 1.0 mA, R
L
= 100
W)
(I
F
= 10 mA, t
r
= 20 ns)
Diode Capacitance
Forward Voltage
C
D
V
F
pF
mV
Reverse Recovery Time
Forward Recovery Voltage
t
rr
V
FR
ns
V
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
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2
NSM80100MT1G
TYPICAL CHARACTERISTICS
f T , CURRENT-GAIN - BANDWIDTH PRODUCT (MHz)
200
V
CE
= -2.0 V
T
J
= 25°C
C, CAPACITANCE (pF)
100
70
50
100
70
50
30
20
C
ibo
T
J
= 25°C
10
7.0
30
20
-2.0 -3.0
5.0
-0.1 -0.2
C
obo
Figure 1. Current−Gain — Bandwidth Product
-5.0 -7.0 -10
-20 -30 -50 -70 -100
I
C
, COLLECTOR CURRENT (mA)
-200
-0.5 -1.0 -2.0
-5.0 -10 -20
V
R
, REVERSE VOLTAGE (VOLTS)
-50 -100
Figure 2. Capacitance
1.0 k
700
500
300
t, TIME (ns)
200
100
70
50
30
20
V
CC
= -40 V
I
C
/I
B
= 10
I
B1
= I
B2
T
J
= 25°C
400
T
J
= 125°C
t
s
h FE, DC CURRENT GAIN
200
25°C
-55°C
100
80
60
40
-0.5 -1.0 -2.0
V
CE
= -1.0 V
t
f
t
d
@ V
BE(off)
= -0.5 V
t
r
-500
-50 -100 -200
-5.0 -10 -20
I
C
, COLLECTOR CURRENT (mA)
-500
10
-5.0 -7.0 -10
-20 -30
-50 -70 -100
-200 -300
I
C
, COLLECTOR CURRENT (mA)
Figure 3. Switching Time
Figure 4. DC Current Gain
1
V
CE(sat)
, COLLECTOR−EMITTER
SATURATION VOLTAGE (V)
I
C
/I
B
= 10
V
BE(sat)
, BASE−EMITTER
SATURATION VOLTAGE (V)
150°C
25°C
−55°C
0.1
1.1
1.0
0.9
0.8
−55°C
0.7
0.6
0.5
0.4
0.3
0.2
150°C
25°C
I
C
/I
B
= 10
0.01
0.001
0.01
0.1
1
0.0001
0.001
0.01
0.1
1
I
C
, COLLECTOR CURRENT (A)
I
C
, COLLECTOR CURRENT (A)
Figure 5. Collector Emitter Saturation Voltage
vs. Collector Current
Figure 6. Base Emitter Saturation Voltage vs.
Collector Current
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NSM80100MT1G
TYPICAL CHARACTERISTICS
V
BE(on)
, BASE−EMITTER VOLTAGE (V)
1.2
1.1
1.0
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
150°C
−55°C
25°C
V
CE
= 1 V
VCE , COLLECTOR-EMITTER VOLTAGE (VOLTS)
-1.0
T
J
= 25°C
-0.8
I
C
=
-50 mA
-0.6
I
C
=
-100 mA
I
C
=
-250 mA
I
C
=
-500 mA
-0.4
I
C
=
-10 mA
-0.2
0.0001
0.001
0.01
0.1
1
0
-0.05 -0.1 -0.2
-0.5
-1.0
-2.0
-5.0
-10
-20
-50
I
C
, COLLECTOR CURRENT (A)
I
B
, BASE CURRENT (mA)
Figure 7. Base Emitter Voltage vs. Collector
Current
-0.8
I
C
, COLLECTOR CURRENT (A)
1
Figure 8. Collector Saturation Region
R
q
VB , TEMPERATURE COEFFICIENT (mV/
°
C)
1S
100 mS
0.1
10 mS
1 mS
-1.2
-1.6
R
qVB
for V
BE
-2.0
Thermal Limit
0.01
-2.4
-2.8
-0.5 -1.0 -2.0
0.001
-5.0
-10
-20
-50
-100 -200
-500
I
C
, COLLECTOR CURRENT (mA)
0.1
1
10
100
V
CE
, COLLECTOR EMITTER VOLTAGE (V)
Figure 9. Base−Emitter Temperature
Coefficient
Figure 10. Safe Operating Area
400
P
D
, POWER DISSIPATION (mW)
300
200
100
0
0
20
40
60
80
100
120
140
160
TEMPERATURE (°C)
Figure 11. Operating Temperature Derating
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NSM80100MT1G
TYPICAL CHARACTERISTICS
1000
I
F
, FORWARD CURRENT (mA)
I
R
, REVERSE CURRENT (mA)
100
10
1.0
0.1
0.01
0.001
T
A
= 150°C
T
A
= 125°C
T
A
= 85°C
T
A
= 55°C
100
T
A
= 125°C
10
T
A
= 85°C
T
A
= 55°C
1
T
A
= 25°C
T
A
= 150°C
T
A
=
−40°C
0.1
T
A
=
−55°C
0
0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2
V
F
, FORWARD VOLTAGE (V)
T
A
= 25°C
0
10
20
30
40
50
60
70
V
R
, REVERSE VOLTAGE (V)
Figure 12. Forward Voltage
0.61
V
R
, DC REVERSE VOLTAGE (V)
C
d
, DIODE CAPACITANCE (pF)
0.59
0.57
0.55
0.53
0.51
0.49
0.47
0.45
0
1
2
3
4
5
6
7
8
100
Figure 13. Leakage Current
75
50
25
0
0
25
50
75
100
125
150
175
V
R
, REVERSE VOLTAGE (V)
T
A
, DERATED AMBIENT TEMPERATURE (°C)
Figure 14. Capacitance
Figure 15. Diode Power Dissipation Curve
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