NSQA6V8AW5T2 Series
ESD Protection Diode
Single Line CAN/LIN Bus Protector
This integrated surge protection device (surge protection) is
designed for applications requiring transient overvoltage protection. It
is intended for use in sensitive equipment such as computers, printers,
business machines, communication systems, medical equipment, and
other applications. Its integrated design provides very effective and
reliable protection for four separate lines using only one package.
These devices are ideal for situations where board space is at a premium.
Features
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2
3
4
5
•
•
•
•
•
•
Low Clamping Voltage
Small SC−88A SMT Package
Stand Off Voltage: 5 V
Low Leakage Current < 1
mA
Four Separate Unidirectional Configurations for Protection
ESD Protection: IEC61000−4−2: Level 4
MILSTD 883C
−
Method 3015−6: Class 3
•
Pb−Free Packages are Available
Benefits
•
Provides Protection for ESD Industry Standards: IEC 61000, HBM
•
Minimize Power Consumption of the System
•
Minimize PCB Board Space
Typical Applications
SC−88A/SOT−353
CASE 419A−02
MARKING DIAGRAM
4
5
6x MG
G
1
x
2
3
•
•
•
•
•
Instrumentation Equipment
Serial and Parallel Ports
Microprocessor Based Equipment
Notebooks, Desktops, Servers
Cellular and Portable Equipment
Rating
Peak Power Dissipation
8
20
msec
Double Exponential
Waveform (Note 1)
Steady State Power
−
1 Diode (Note 2)
Thermal Resistance
−
Junction−to−Ambient
Above 25°C, Derate
Operating Junction Temperature
Range
Storage Temperature Range
Lead Solder Temperature
−
Maximum
10 Seconds Duration
IEC ^1000−4−2 (ESD)
Contact
Symbol
P
PK
Value
20
Unit
W
MAXIMUM RATINGS
(T
A
= 25°C unless otherwise noted)
M
G
= H for NSQA6V8AW5T2
X for NSQA12VAW5T2
= Date Code
= Pb−Free Package
(Note: Microdot may be in either location)
P
D
R
qJA
380
327
3.05
−40
to +125
−55
to +150
260
$8.0
mW
°C/W
mW/°C
°C
°C
°C
kV
ORDERING INFORMATION
Device
NSQA6V8AW5T2
NSQA6V8AW5T2G
NSQA12VAW5T2
NSQA12VAW5T2G
Package
SC−88A
Shipping
†
3000/Tape & Reel
T
J
T
stg
T
L
SC−88A 3000/Tape & Reel
(Pb−Free)
SC−88A
3000/Tape & Reel
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
1. Non−repetitive current pulse per Figure 6.
2. Only 1 diode under power. For all 4 diodes under power, P
D
will be 25%.
Mounted on FR4 board with min pad.
SC−88A 3000/Tape & Reel
(Pb−Free)
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
See Application Note AND8308/D for further description of survivability specs.
©
Semiconductor Components Industries, LLC, 2009
October, 2017
−
Rev. 6
1
Publication Order Number:
NSQA6V8AW5T2/D
NSQA6V8AW5T2 Series
ELECTRICAL CHARACTERISTICS
(T
A
= 25°C unless otherwise noted)
Symbol
I
PP
V
C
V
RWM
I
R
V
BR
I
T
I
F
V
F
P
pk
C
Parameter
Maximum Reverse Peak Pulse Current
Clamping Voltage @ I
PP
Working Peak Reverse Voltage
Maximum Reverse Leakage Current @ V
RWM
Breakdown Voltage @ I
T
Test Current
Forward Current
Forward Voltage @ I
F
Peak Power Dissipation
Capacitance @ V
R
= 0 and f = 1.0 MHz
I
PP
V
C
V
BR
V
RWM
I
R
V
F
I
T
V
I
F
I
Uni−Directional
*See Application Note AND8308/D for detailed explanations of
datasheet parameters.
ELECTRICAL CHARACTERISTICS
(T
A
= 25°C unless otherwise noted)
Characteristic
NSQA6V8AW5T2
Breakdown Voltage (I
T
= 1 mA) (Note 3)
Leakage Current (V
RWM
= 5.0 V)
Clamping Voltage 1 (I
PP
= 1.6 A) (Note 4)
Maximum Peak Pulse Current (Note 4)
Junction Capacitance
−
(V
R
= 0 V, f = 1 MHz)
−
(V
R
= 3.0 V, f = 1 MHz)
Clamping Voltage
−
Per IEC61000−4−2
NSQA12VAW5T2
Breakdown Voltage (I
T
= 5 mA) (Note 3)
Leakage Current (V
RWM
= 9.0 V)
Zener Impedence (I
T
= 5 mA)
Clamping Voltage 1 (I
PP
= 0.9 A) (Note 4)
Maximum Peak Pulse Current (Note 4)
Junction Capacitance
−
(V
R
= 0 V, f = 1 MHz)
Clamping Voltage
−
Per IEC61000−4−2 (Note 5)
3. V
BR
is measured at pulse test current I
T
.
4. Surge current waveform per Figure 5.
5. For test procedure see Figures 3 and 4 and Application Note AND8307/D.
V
BR
I
R
Z
Z
V
C
I
PP
C
J
V
C
11.4
−
−
−
−
−
12.0
−
−
−
−
−
Figures 1 and 2
12.7
0.05
30
23
0.9
15
V
mA
W
V
A
pF
V
V
BR
I
R
V
C
I
PP
C
J
V
C
6.4
−
−
−
−
−
6.8
−
−
−
12
6.7
Figures 1 and 2
7.1
1.0
13
1.6
15
9.5
V
mA
V
A
pF
V
Symbol
Min
Typ
Max
Unit
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NSQA6V8AW5T2 Series
Figure 1. ESD Clamping Voltage Screenshot
Positive 8 kV Contact per IEC61000−4−2
Figure 2. ESD Clamping Voltage Screenshot
Negative 8 kV Contact per IEC61000−4−2
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NSQA6V8AW5T2 Series
IEC 61000−4−2 Spec.
Test Volt-
age (kV)
2
4
6
8
First Peak
Current
(A)
7.5
15
22.5
30
Current at
30 ns (A)
4
8
12
16
Current at
60 ns (A)
2
4
6
8
I @ 60 ns
10%
t
P
= 0.7 ns to 1 ns
I @ 30 ns
IEC61000−4−2 Waveform
I
peak
100%
90%
Level
1
2
3
4
Figure 3. IEC61000−4−2 Spec
Device
ESD Gun
Under
Test
Oscilloscope
50
W
Cable
50
W
Figure 4. Diagram of ESD Test Setup
The following is taken from Application Note
AND8308/D
−
Interpretation of Datasheet Parameters
for ESD Devices.
ESD Voltage Clamping
For sensitive circuit elements it is important to limit the
voltage that an IC will be exposed to during an ESD event
to as low a voltage as possible. The ESD clamping voltage
is the voltage drop across the ESD protection diode during
an ESD event per the IEC61000−4−2 waveform. Since the
IEC61000−4−2 was written as a pass/fail spec for larger
100
% OF PEAK PULSE CURRENT
90
80
70
60
50
40
30
20
10
0
0
20
t
P
t
r
systems such as cell phones or laptop computers it is not
clearly defined in the spec how to specify a clamping voltage
at the device level. ON Semiconductor has developed a way
to examine the entire voltage waveform across the ESD
protection diode over the time domain of an ESD pulse in the
form of an oscilloscope screenshot, which can be found on
the datasheets for all ESD protection diodes. For more
information on how ON Semiconductor creates these
screenshots and how to interpret them please refer to
AND8307/D.
PEAK VALUE I
RSM
@ 8
ms
PULSE WIDTH (t
P
) IS DEFINED
AS THAT POINT WHERE THE
PEAK CURRENT DECAY = 8
ms
HALF VALUE I
RSM
/2 @ 20
ms
40
t, TIME (ms)
60
80
Figure 5. 8 x 20
ms
Pulse Waveform
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NSQA6V8AW5T2 Series
100
P
pk
, PEAK SURGE POWER (W)
% OF RATED POWER OR I
PP
110
100
90
80
70
60
50
40
30
20
10
0
10
1
1
10
t, TIME (ms)
100
1000
0
25
50
75
100
125
150
T
A
, AMBIENT TEMPERATURE (°C)
Figure 6. Pulse Width
Figure 7. Power Derating Curve
0.16
I
R
, REVERSE LEAKAGE (mA)
TYPICAL CAPACITANCE (pF)
1 MHz FREQUENCY
0.14
0.12
0.10
0.08
0.06
0.04
0.02
0
−60 −40
−20
0
20
40
60
80
100
14
12
10
8
6
4
2
0
0
1
2
3
4
5
6
6V
T
A
= 25°C
12 V
T, TEMPERATURE (°C)
BIAS VOLTAGE (V)
Figure 8. Reverse Leakage versus
Temperature
Figure 9. Capacitance
1
I
F
, FORWARD CURRENT (A)
0.1
0.01
0.001
T
A
= 25°C
0.6
0.8
1.0
1.2
1.4
1.6
1.8
V
F
, FORWARD VOLTAGE (V)
Figure 10. Forward Voltage
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