NTE5480 thru NTE5487
Silicon Controlled Rectifier (SCR)
8 Amp
Description:
The NTE5480 through NTE5487 are multi–purpose PNPN silicon controlled rectifiers in a TO64 type
package suited for industrial and consumer applications. These 8 amp devices are available in volt-
ages ranging from 25V to 600V.
Features:
D
Uniform Low–Level Noise–Immune Gate Triggering: I
GT
= 10mA Typ @ T
C
= +25°C
D
Low Forward “ON” Voltage: v
T
= 1V Typ @ 5A @ +25°C
D
High Surge–Current Capability: I
TSM
= 100A Peak
D
Shorted Emitter Construction
Absolute Maximum Ratings:
(T
J
= –40° to +100°C unless otherwise specified)
Peak Repetitive Forward and Reverse Blocking Voltage (Note 1), V
DRM
or V
RRM
NTE5480 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 25V
NTE5481 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 50V
NTE5482 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 100V
NTE5483 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 200V
NTE5484 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 300V
NTE5485 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 400V
NTE5486 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 500V
NTE5487
(This device is discontinued)
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 600V
Forward Current RMS, I
T(RMS)
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8A
Peak Forward Surge Current (One Cycle, 60Hz, T
J
= –40° to +100°C, I
TSM
. . . . . . . . . . . . . . . 100A
Circuit Fusing (t
≤
8.3ms, T
J
= –40° to +100°C), I
2
t . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 40A
2
s
Peak Gate Power, P
GM
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5W
Average Gate Power, P
G(AV)
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0.5W
Peak Gate Current, I
GM
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2A
Peak Gate Voltage (Note 2), V
GM
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10V
Operating Temperature Range, T
J
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –40° to +100°C
Storage Temperature Range, T
stg
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –40° to +150°C
Typical Thermal Resistance, Junction–to–Case, R
thJC
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.5°C/W
Typical Thermal Resistance, Case–to–Ambient, R
thJA
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 50°C/W
Note 1. Ratings apply for zero or negative gate voltage. Devices should not be tested for blocking
capability in a manner such that the voltage applied exceeds the rated blocking voltage.
Note 2. Devices should not be operated with a positive bias applied to the gate concurrently with a
negative potential applied to the anode.
Electrical Characteristics:
(T
C
= +25°C unless otherwise specified)
Parameter
Peak Forward or Reverse
Blocking Current
Gate Trigger Current (Continuous DC)
Gate Trigger Voltage (Continuous DC)
Symbol
I
DRM
,
I
RRM
I
GT
V
GT
Test Conditions
Rated V
DRM
or V
RRM
, T
J
= +25°C
Gate Open
T
J
= +100°C
V
D
= 7V, R
L
= 100Ω,
Note 3
V
D
= 7V, R
L
= 100Ω
T
C
= –40°C
T
J
= +100°C
Forward “ON” Voltage
Holding Current
v
TM
I
H
t
on
t
off
I
TM
= 15.7A, Note 4
V
D
= 7V, Gate Open
T
C
= –40°C
Turn–On Time (t
d
+ t
r
)
Turn–Off Time
I
G
= 20mA, I
F
= 5A, V
D
= Rated V
DRM
I
F
= 5A, I
R
= 5A,
dv/dt = 30V/µs
T
J
= +100°C,
V
D
= Rated V
DRM
T
C
= –40°C
Min
–
–
–
–
–
–
0.2
–
–
–
–
–
–
–
Typ Max Unit
–
–
10
–
0.75
–
–
1.4
10
–
1
15
25
50
10
2
30
60
1.5
2.5
–
2.0
30
60
–
–
–
–
µA
mA
mA
mA
V
V
V
V
mA
mA
µs
µs
µs
V/µs
Forward Voltage Application Rate
(Exponential)
dv/dt
Gate Open, T
J
= +100°C,
V
D
= Rated V
DRM
Note 3. For optimum operation, i.e. faster turn–on, lower switching losses, best di/dt capability, rec-
ommended I
GT
= 200mA minimum.
Note 4. Pulsed, 1ms max., Duty Cycle
≤
1%.
.431
(10.98
Max
Gate
Cathode
.855
(21.7)
Max
.125 (3.17) Max
.453
(111.5)
Max
Anode
10–32 UNF–2A
嵌入式系统
