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NTE5851

Rectifier Diode, 1 Phase, 1 Element, 6A, 50V V(RRM), Silicon, DO-4,

器件类别:分立半导体    二极管   

厂商名称:NTE

厂商官网:http://www.nteinc.com

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器件参数
参数名称
属性值
厂商名称
NTE
Reach Compliance Code
unknown
ECCN代码
EAR99
应用
POWER
外壳连接
ANODE
配置
SINGLE
二极管元件材料
SILICON
二极管类型
RECTIFIER DIODE
最大正向电压 (VF)
1.2 V
JEDEC-95代码
DO-4
JESD-30 代码
O-MUPM-D1
最大非重复峰值正向电流
141 A
元件数量
1
相数
1
端子数量
1
最大输出电流
6 A
封装主体材料
METAL
封装形状
ROUND
封装形式
POST/STUD MOUNT
认证状态
Not Qualified
最大重复峰值反向电压
50 V
表面贴装
NO
端子形式
SOLDER LUG
端子位置
UPPER
文档预览
NTE5850 thru NTE5869
Silicon Power Rectifier Diode, 6 Amp
Description and Features:
The NTE5850 through NTE5869 are low power general purpose rectifier diodes in a DO4 type pack-
age designed for battery chargers, converters, power supplies, and machine tool controls.
Features:
D
High Surge Current Capability
D
High Voltage Available
D
Designed for a Wide Range of Applications
D
Available in Anode–to–Case or Cathode–to–Case Style
Ratings and Characteristics:
Average Forward Current (T
C
= +158°C Max), I
F(AV)
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6A
Maximum Forward Surge Current, I
FSM
50Hz . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 134A
60Hz . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 141A
Fusing Current, I
2
t
50Hz . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 90A
2
s
60Hz . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 141A
2
s
Fusing Current, I
2
pt
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1270A
2
ps
Maximum Reverse Recovery Voltage Range, V
RRM
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 50 to 1000V
Voltage Ratings:
(T
J
= +175°C)
NTE Type Number
Cathode
to Case
Anode
to Case
V
RRM
–Max
Repetitive Peak
Reverse Volt.
(V)
V
RSM
–Max
Non–Repetitive Peak
Reverse Voltage
(V)
V
R
–Max.
Direct Reverse
Voltage
(V)
V
R(SR)
Minimum Avalanche
Voltage
(V)
I
RM
–Max
Reverse Current
Rated V
RRM
(mA)
5850
5852
5854
5856
5858
5860
5862
5866
5868
5851
5853
5855
5857
5859
5861
5863
5867
5869
50
100
200
300
400
500
600
800
1000
75
150
275
385
500
613
725
950
1200
50
100
200
300
400
50
600
800
1000
500
613
725
950
1200
12
12
12
12
12
12
12
12
12
Electrical Specifications:
Parameter
Maximum Average Forward Current
Maximum RMS Forward Current
Maximum Peak One–Cycle
Non–Repetitive Surge Current
Symbol
I
F (AV)
I
F(RMS)
I
FSM
t = 10ms
t = 8.3ms
t = 10ms
t = 8.3ms
Maximum I
2
t for Individual Device
Fusing
Maximum I
2
pt
Maximum Peak Forward Voltage
Maximum Value of Threshold
Voltage
Maximum Value of Forward Slope
Resistance
I
2
t
I
2
pt
V
FM
V
M (TO)
r
t
t = 10ms
t = 8.3ms
Sinusoidal Half Wave,
No voltage reapplied
100% rated voltage reapplied,
T
J
= +175°C
°
100% rated voltage reapplied,
Initial T
J
= +175°C
°
Test Conditions
180° sinusoidal condition, T
C
= +158°C Max
Rating
6
9.5
134
141
159
167
127
116
1270
1.10
0.60
17.2
Unit
A
A
A
A
A
A
A
2
s
A
2
s
A
2
pt
V
V
mΩ
t = 0.1 to 10ms, No voltage reapplied, Note 1
I
FM
= 19A, T
J
= +25°C
T
J
= +175°C
T
J
= +175°C
Note 1. I
2
t for time t
x
= I
2
t
S
t
x
Thermal–Mechanical Specifications:
Parameter
Maximum Operation Junction Temperature
Maximum Storage Temperature
Maximum Internal Thermal Resistance
Junction–to–Case
Thermal Resistance, Case–to–Sink
Mounting Torque
Approximate Weight
Symbol
T
J
T
stg
R
thJC
R
thCS
T
wt
.250 (6.35) Max
.060 (1.52)
Dia Min
.175 (4.45) Max
10–32 NF–2A
DC operation
Mounting surface flat, smooth and
greased
Non–lubricated threads
Test Conditions
Rating
–65 to + 175
–65 to + 200
2.5
0.25
Unit
°C
°C
K/W
K/W
1.2 – 1.5
m•N
(10.5 – 13.5) (in•lb)
11 (0.25)
g (oz)
.437
(11.1)
Max
.424 (10.8)
Dia Max
.405
(10.3)
Max
1.250 (31.75) Max
.453
(11.5)
Max
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