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NTE918M

OP-AMP, PDIP8

器件类别:模拟混合信号IC    放大器电路   

厂商名称:NTE

厂商官网:http://www.nteinc.com

器件标准:

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器件参数
参数名称
属性值
是否Rohs认证
符合
厂商名称
NTE
零件包装代码
DIP
包装说明
DIP, DIP8,.3
针数
8
Reach Compliance Code
unknow
ECCN代码
EAR99
放大器类型
OPERATIONAL AMPLIFIER
架构
VOLTAGE-FEEDBACK
最大平均偏置电流 (IIB)
0.75 µA
25C 时的最大偏置电流 (IIB)
0.5 µA
标称共模抑制比
100 dB
频率补偿
YES
最大输入失调电压
15000000 µV
JESD-30 代码
R-PDIP-T8
低-偏置
NO
低-失调
NO
微功率
NO
负供电电压上限
-20 V
标称负供电电压 (Vsup)
-15 V
功能数量
1
端子数量
8
最高工作温度
70 °C
最低工作温度
封装主体材料
PLASTIC/EPOXY
封装代码
DIP
封装等效代码
DIP8,.3
封装形状
RECTANGULAR
封装形式
IN-LINE
峰值回流温度(摄氏度)
NOT SPECIFIED
功率
NO
电源
+-5/+-20 V
可编程功率
NO
认证状态
Not Qualified
最小摆率
50 V/us
标称压摆率
70 V/us
最大压摆率
10 mA
供电电压上限
20 V
标称供电电压 (Vsup)
15 V
表面贴装
NO
温度等级
COMMERCIAL
端子形式
THROUGH-HOLE
端子节距
2.54 mm
端子位置
DUAL
处于峰值回流温度下的最长时间
NOT SPECIFIED
最小电压增益
20000
宽带
NO
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NTE918
NTE918M
NTE918SM
Integrated Circuit
High Speed Operational Amplifier
Description:
The NTE918, NTE918M, and the NTE918SM are precision high speed operational amplifier de-
signed for applications requiring wide bandwidth and high slew rate. These devices have internal uni-
ty gain frequency compensation. This considerably simplifies its application since no external compo-
nents are necessary for operation. However, unlike most internally compensated amplifiers, external
frequency compensation may be added for optimum performance. For inverting applications, feed-
forward compensation will boost the slew rate to over 150V/µs and almost double the bandwidth.
Overcompensation can be used with the amplifier for greater stability when maximum bandwidth is
not needed. Further, a single capacitor can be added to reduce the 0.1% setting time to under 1µs.
The high speed and fast setting time of these OP amps make them useful in A/D converters, oscilla-
tors, active filters, sample and hold circuits, or general purpose amplifiers. These devices are easy
to apply and offer an order of magnitude better AC performance than industry standards such as the
NTE909 and NTE909D.
Features:
D
15MHz Small Signal Bandwidth
D
Guaranteed 50V/µs Slew Rate
D
Maximum Bias Current of 250nA
D
Operates from Supplies of
±5V
to
±20V
D
Internal Frequency Compensation
D
Input and Output Overload Protected
D
Pin Compatible with General Purpose OP Amps
D
Available in 3 Different Case Styles:
8–Lead Metal Can: NTE918
8–Lead Mini DIP: NTE918M
8–Lead SOIC (Surface Mount): NTE918SM
Absolute Maximum Ratings:
Power Supply Voltage, V
S
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
±20V
Power Dissipation (Note 1), P
D
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 500mW
Differential Input Current (Note 2), I
ID
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
±10mA
Input Voltage (Note 3), V
I
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
±15V
Output Short–Circuit Duration, t
S
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Indefinite
Operating Temperature Range, T
opr
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0° to +70°C
Storage Temperature Range, T
stg
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –65° to +150°C
Lead Temperature (During Soldering, 10sec), T
L
NTE918 (Metal Can) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +300°C
NTE918M (Plastic DIP) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +260°C
NTE918SM (Surface Mount)
Vapor Phase (60sec) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +215°C
Infrared (15sec) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +220°C
Note 1. The maximum junction temperature of these devices is +110°C. For operating at elevated
temperatures, the NTE918 must be derated based on a thermal resistance of +150°C/W,
junctio to ambient, or +45°C/W, junction to case. The thermal resistance of the NTE918M
and the NTE918SM is +100°C/W, junction to ambient.
Note 2. The inputs are shunted with back–to–back diodes for overvoltage protection. Therefore, ex-
cessive current will flow if a differential input voltage in excess of 1V is applied between the
inputs unless some limiting resistance is used.
Note 3. For supply voltages less than
±15V,
the absolute maximum input voltage is equal to the supply
voltage.
Electrical Characteristics:
(±5V
V
S
≤ ±20V,
T
A
+70°C, Note 4 unless otherwise specified)
Parameter
Input Offset Voltage
Input Offset Current
Input Bias Current
Input Resistance
Supply Current
Large Signal Voltage Gain
Slew Rate
Small Signal Bandwidth
Output Voltage Swing
Input Voltage Range
Common–Mode Rejection Ratio
Supply Voltage Rejection Ratio
Symbol
V
IO
T
A
= +25°C
I
IO
T
A
= +25°C
I
IB
T
A
= +25°C
r
i
A
V
SR
BW
V
O
V
I
CMRR
PSRR
T
A
= +25°C
V
S
=
±15V,
V
OUT
=
±10V,
R
L
2kΩ
V
S
=
±15V,
V
OUT
=
±10V,
R
L
2kΩ, T
A
= +25°C
V
S
=
±15V,
A
V
= 1, T
A
= +25°C, Note 5
V
S
=
±15V,
T
A
= +25°C
V
S
=
±15V,
R
L
= 2kΩ
V
S
=
±15V
I
CC
, I
EE
T
A
= +25°C
Test Conditions
Min
0.5
20
25
50
±12
±11.5
100
65
Typ
4
30
150
3.0
5
200
70
15
±13
80
Max
15
10
300
200
750
500
10
Unit
V
V
nA
nA
nA
nA
MΩ
mA
V/mV
V/mV
V/µs
MHz
V
V
dB
dB
Note 4. Power supplies must be bypassed with 0.1µF disc capacitors.
Note 5. Slew rate is tested with V
S
=
±15V.
These devices are in a unity–gain non–inverting configuration.
V
IN
is stepped from –7.5V to +7.5V and vice versa. The slew rates between –5V and +5V and
vice versa are tested and guaranteed to exceed 50V/µs.
Pin Connection Diagram
NTE918
(Top View)
NTE918M
NTE918SM
Balance/Comp 3
Output
5
6
4
V
(–)
Balance/Comp 1
Invert Input
V
(+)
7
3
Non–Invert
Input
8
1
Balance/Comp 1
2
Non–Invert Input
V (–)
Invert Input
1
2
3
4
8
7
6
5
Comp 2
V (+)
Output
Balance/Comp 3
Comp 2
NTE918
.370 (9.39) Dia Max
.335 (8.52) Dia Max
.177 (4.5)
Max
.492
(12.5)
Min
.018 (0.45) Dia Typ
2
1
8
45°
7
3
4
5
6
.200 (5.06)
Dia
.032 (0.82)
NTE918M
8
5
.256 (6.52) Max
1
4
.393 (10.0)
Max
.150
(3.81)
.300 (7.62)
.100 (2.54)
.300 (7.62)
.070 (1.77) Min
NTE918SM
.192 (4.9)
8
5
.236
(5.99)
.154
(3.91)
1
4
.050 (1.27)
016
(.406)
061
(1.53)
.006 (.152)
NOTE: Pin1 on Beveled Edge
.198 (5.03)
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参数对比
与NTE918M相近的元器件有:NTE918SM、NTE918。描述及对比如下:
型号 NTE918M NTE918SM NTE918
描述 OP-AMP, PDIP8 OP-AMP, PDSO8 OP-AMP, MBCY8
厂商名称 NTE NTE NTE
零件包装代码 DIP SOIC BCY
包装说明 DIP, DIP8,.3 SOP, SOP8,.25 , CAN8,.2
针数 8 8 8
Reach Compliance Code unknow unknow unknow
ECCN代码 EAR99 EAR99 EAR99
放大器类型 OPERATIONAL AMPLIFIER OPERATIONAL AMPLIFIER OPERATIONAL AMPLIFIER
架构 VOLTAGE-FEEDBACK VOLTAGE-FEEDBACK VOLTAGE-FEEDBACK
最大平均偏置电流 (IIB) 0.75 µA 0.75 µA 0.75 µA
25C 时的最大偏置电流 (IIB) 0.5 µA 0.5 µA 0.5 µA
标称共模抑制比 100 dB 100 dB 100 dB
频率补偿 YES YES YES
最大输入失调电压 15000000 µV 15000000 µV 15000000 µV
JESD-30 代码 R-PDIP-T8 R-PDSO-G8 O-MBCY-W8
低-偏置 NO NO NO
低-失调 NO NO NO
微功率 NO NO NO
负供电电压上限 -20 V -20 V -20 V
标称负供电电压 (Vsup) -15 V -15 V -15 V
功能数量 1 1 1
端子数量 8 8 8
最高工作温度 70 °C 70 °C 70 °C
封装主体材料 PLASTIC/EPOXY PLASTIC/EPOXY METAL
封装等效代码 DIP8,.3 SOP8,.25 CAN8,.2
封装形状 RECTANGULAR RECTANGULAR ROUND
封装形式 IN-LINE SMALL OUTLINE CYLINDRICAL
功率 NO NO NO
电源 +-5/+-20 V +-5/+-20 V +-5/+-20 V
可编程功率 NO NO NO
认证状态 Not Qualified Not Qualified Not Qualified
最小摆率 50 V/us 50 V/us 50 V/us
标称压摆率 70 V/us 70 V/us 70 V/us
最大压摆率 10 mA 10 mA 10 mA
供电电压上限 20 V 20 V 20 V
标称供电电压 (Vsup) 15 V 15 V 15 V
表面贴装 NO YES NO
温度等级 COMMERCIAL COMMERCIAL COMMERCIAL
端子形式 THROUGH-HOLE GULL WING WIRE
端子位置 DUAL DUAL BOTTOM
最小电压增益 20000 20000 20000
宽带 NO NO NO
封装代码 DIP SOP -
端子节距 2.54 mm 1.27 mm -
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