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NUP5120X6T1G

极性:- 峰值脉冲电流(10/1000us):- 箝位电压:- 击穿电压(最小值):6.2V 反向关断电压(典型值):5V (Max)

器件类别:分立半导体    二极管   

厂商名称:ON Semiconductor(安森美)

厂商官网:http://www.onsemi.cn

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器件参数
参数名称
属性值
Brand Name
ON Semiconductor
是否无铅
不含铅
厂商名称
ON Semiconductor(安森美)
包装说明
R-PDSO-F6
针数
6
制造商包装代码
463A-01
Reach Compliance Code
compliant
ECCN代码
EAR99
Factory Lead Time
1 week
Samacsys Description
Quint Uni-Directional TVS Diode, 90W peak, 6-pin SOT-563
最大击穿电压
7.2 V
最小击穿电压
6.2 V
击穿电压标称值
6.8 V
配置
COMMON ANODE, 5 ELEMENTS
二极管元件材料
SILICON
二极管类型
TRANS VOLTAGE SUPPRESSOR DIODE
JESD-30 代码
R-PDSO-F6
JESD-609代码
e3
湿度敏感等级
1
最大非重复峰值反向功率耗散
90 W
元件数量
5
端子数量
6
最高工作温度
125 °C
最低工作温度
-40 °C
封装主体材料
PLASTIC/EPOXY
封装形状
RECTANGULAR
封装形式
SMALL OUTLINE
峰值回流温度(摄氏度)
260
极性
UNIDIRECTIONAL
认证状态
Not Qualified
最大重复峰值反向电压
5 V
表面贴装
YES
技术
AVALANCHE
端子面层
Tin (Sn)
端子形式
FLAT
端子位置
DUAL
处于峰值回流温度下的最长时间
40
Base Number Matches
1
文档预览
NUP5120X6
ESD Protection Diode Array,
5-Line
This 5−line surge protection array is designed for application
requiring surge protection capability. It is intended for use in
over−transient voltage and ESD sensitive equipment such as cell
phones, portables, computers, printers and other applications. This
device features a monolithic common anode design which protects
five independent lines in a single SOT−563 package.
Features
www.onsemi.com
SOT−563 5−LINE SURGE
PROTECTION
PIN ASSIGNMENT
1
2
3
PIN 1.
2.
3.
4.
5.
6.
6
5
4
CATHODE
ANODE
CATHODE
CATHODE
CATHODE
CATHODE
Protects up to 5 Lines in a Single SOT−563 Package
ESD Rating of Class 3B (Exceeding 8 kV) per Human Body Model
and Class C (Exceeding 400 V) per Machine Model.
Compliance with IEC 61000−4−2 (ESD) 15 kV (Air), 8 kV (Contact)
This is a Pb−Free Device
Applications
Hand Held Portable Applications
Serial and Parallel Ports
Notebooks, Desktops, Servers
MAXIMUM RATINGS
(T
J
= 25°C, unless otherwise specified)
Symbol
P
PK
1
Rating
Peak Power Dissipation
8x20
msec
double exponential waveform,
(Note 1)
Operating Junction Temperature Range
Storage Temperature Range
Lead Solder Temperature – Maximum
(10 seconds)
Human Body Model (HBM)
Machine Model (MM)
IEC 61000−4−2 Air (ESD)
IEC 61000−4−2 Contact (ESD)
Value
90
Unit
W
6
54
12
3
MARKING
DIAGRAM
SOT−563
CASE 463A
STYLE 6
RN MG
G
T
J
T
STG
T
L
ESD
−40
to 125
−55
to 150
260
16000
400
15000
8000
°C
°C
°C
V
SCALE 4:1
RN
= Specific Device Code
M
= Month Code
G
= Pb−Free Package
(Note: Microdot may be in either location)
ORDERING INFORMATION
Device
NUP5120X6T1G
NUP5120X6T2G
Package
SOT−563
(Pb−Free)
SOT−563
(Pb−Free)
Shipping
4000/Tape & Reel
4000/Tape & Reel
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
1. Non−repetitive current pulse per Figure 1.
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
©
Semiconductor Components Industries, LLC, 2006
November, 2017
Rev. 5
1
Publication Order Number:
NUP5120/D
NUP5120X6
ELECTRICAL CHARACTERISTICS
(T
J
= 25°C, unless otherwise specified)
Parameter
Reverse Working Voltage
Breakdown Voltage
Reverse Leakage Current
Capacitance
(Note 2)
I
T
= 1 mA, (Note 3)
V
RWM
= 3 V
V
R
= 0 V, f = 1 MHz (Line to GND)
V
R
= 2.5 V, f = 1 MHz (Line to GND)
Conditions
Symbol
V
RWM
V
BR
I
R
C
J
6.2
Min
Typ
6.8
0.01
54
Max
5.0
7.2
0.5
70
Unit
V
V
mA
pF
2. Surge protection devices are normally selected according to the working peak reverse voltage (V
RWM
), which should be equal or greater
than the DC or continuous peak operating voltage level.
3. V
BR
is measured at pulse test current I
T
.
www.onsemi.com
2
NUP5120X6
120
% OF RATED POWER OR I
PP
100
80
60
40
20
0
0
25
50
75
100
125
150
10
1
10
PULSE DURATION (μS)
100
PEAK POWER (W)
1000
T
A
= 25
°C
100
T
A
, AMBIENT TEMPERATURE (°C)
Figure 1. Power Derating vs. Ambient
Temperature
Figure 2. Peak Power vs. Pulse Duration
100
C
T
, TYPICAL CAPACITANCE (pF)
T
A
= 25
°C
I
PP
, PEAK CURRENT (A)
60
T
A
= 25
°C
50
40
30
20
10
0
0
1
2
3
4
5
6
10
1
0.1
6
8
10
12
14
16
V
CL
, CLAMP VOLTAGE (V)
V
R
, REVERSE VOLTAGE (V)
Figure 3. Peak Current vs. Clamp Voltage
Figure 4. Typical Capacitance vs. Reverse
Voltage
1000
T
A
= 25
°C
REVERSE CURRENT (nA)
FORWARD CURRENT (A)
100
10
1
0.1
0.01
T
J
= 125
°C
1
T
A
= 25
°C
T
J
= 125
°C
0.1
T
J
= 25
°C
T
J
= 25
°C
0.01
1
2
3
4
5
6
0.001
0.6
0.7
0.8
0.9
1.0
1.1
1.2
REVERSE VOLTAGE (V)
FORWARD VOLTAGE (V)
Figure 5. Reverse Current vs. Reverse Voltage
Figure 6. Typical Forward Current vs. Forward
Voltage
www.onsemi.com
3
NUP5120X6
PACKAGE DIMENSIONS
SOT−563, 6 LEAD
CASE 463A
ISSUE G
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: MILLIMETERS
3. MAXIMUM LEAD THICKNESS INCLUDES LEAD
FINISH THICKNESS. MINIMUM LEAD THICKNESS
IS THE MINIMUM THICKNESS OF BASE MATERIAL.
MILLIMETERS
MIN
NOM MAX
0.50
0.55
0.60
0.17
0.22
0.27
0.08
0.12
0.18
1.50
1.60
1.70
1.10
1.20
1.30
0.5 BSC
0.10
0.20
0.30
1.50
1.60
1.70
INCHES
NOM MAX
0.021 0.023
0.009 0.011
0.005 0.007
0.062 0.066
0.047 0.051
0.02 BSC
0.004 0.008 0.012
0.059 0.062 0.066
MIN
0.020
0.007
0.003
0.059
0.043
D
−X−
6
5
4
A
L
1
2
3
E
−Y−
b
H
E
e
5
6 PL
M
C
X Y
0.08 (0.003)
DIM
A
b
C
D
E
e
L
H
E
SOLDERING FOOTPRINT*
0.3
0.0118
0.45
0.0177
1.35
0.0531
1.0
0.0394
STYLE 6:
PIN 1. CATHODE
2. ANODE
3. CATHODE
4. CATHODE
5. CATHODE
6. CATHODE
0.5
0.5
0.0197 0.0197
SCALE 20:1
mm
inches
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
ON Semiconductor and
are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.
ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent
coverage may be accessed at
www.onsemi.com/site/pdf/Patent−Marking.pdf.
ON Semiconductor reserves the right to make changes without further notice to any products herein.
ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards,
regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or
specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer
application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not
designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification
in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized
application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and
expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such
claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This
literature is subject to all applicable copyright laws and is not for resale in any manner.
PUBLICATION ORDERING INFORMATION
LITERATURE FULFILLMENT:
Literature Distribution Center for ON Semiconductor
19521 E. 32nd Pkwy, Aurora, Colorado 80011 USA
Phone:
303−675−2175 or 800−344−3860 Toll Free USA/Canada
Fax:
303−675−2176 or 800−344−3867 Toll Free USA/Canada
Email:
orderlit@onsemi.com
N. American Technical Support:
800−282−9855 Toll Free
USA/Canada
Europe, Middle East and Africa Technical Support:
Phone: 421 33 790 2910
Japan Customer Focus Center
Phone: 81−3−5817−1050
ON Semiconductor Website: www.onsemi.com
Order Literature:
http://www.onsemi.com/orderlit
For additional information, please contact your local
Sales Representative
www.onsemi.com
4
NUP5120/D
查看更多>
参数对比
与NUP5120X6T1G相近的元器件有:NUP5120X6T2GH。描述及对比如下:
型号 NUP5120X6T1G NUP5120X6T2GH
描述 极性:- 峰值脉冲电流(10/1000us):- 箝位电压:- 击穿电压(最小值):6.2V 反向关断电压(典型值):5V (Max) Surge protector Array, SOT-563, 6 LEAD, 4000-REEL
Brand Name ON Semiconductor ON Semiconductor
是否无铅 不含铅 不含铅
厂商名称 ON Semiconductor(安森美) ON Semiconductor(安森美)
针数 6 6
制造商包装代码 463A-01 463A-01
Reach Compliance Code compliant compliant
ECCN代码 EAR99 EAR99
二极管类型 TRANS VOLTAGE SUPPRESSOR DIODE TRANS VOLTAGE SUPPRESSOR DIODE
峰值回流温度(摄氏度) 260 NOT SPECIFIED
处于峰值回流温度下的最长时间 40 NOT SPECIFIED
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