型号
- 型号
- 关键词
10 A, 60 V, 0.013 ohm, 2 CHANNEL, N-CHANNEL, Si, POWER, MOSFET
10 A, 60 V, 0.013 ohm, 2 通道, N沟道, 硅, POWER, 场效应管
厂商官网：http://www.onsemi.cn
下载文档| 型号 | NVMFD5873NLWF | NVMFD5873NL |
|---|---|---|
| 描述 | 10 A, 60 V, 0.013 ohm, 2 CHANNEL, N-CHANNEL, Si, POWER, MOSFET | 10 A, 60 V, 0.013 ohm, 2 CHANNEL, N-CHANNEL, Si, POWER, MOSFET |
| 端子数量 | 6 | 6 |
| 最小击穿电压 | 60 V | 60 V |
| 加工封装描述 | 6 X 5 MM, LEAD FREE, COMPACT, CASE 506BT, DFN8, SOP-8 | 6 X 5 MM, LEAD FREE, COMPACT, CASE 506BT, DFN8, SOP-8 |
| 状态 | ACTIVE | ACTIVE |
| 包装形状 | RECTANGULAR | RECTANGULAR |
| 包装尺寸 | SMALL OUTLINE | SMALL OUTLINE |
| 表面贴装 | Yes | Yes |
| 端子形式 | FLAT | FLAT |
| 端子位置 | DUAL | DUAL |
| 包装材料 | PLASTIC/EPOXY | PLASTIC/EPOXY |
| 结构 | SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE | SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE |
| 壳体连接 | DRAIN | DRAIN |
| 元件数量 | 2 | 2 |
| 晶体管元件材料 | SILICON | SILICON |
| 通道类型 | N-CHANNEL | N-CHANNEL |
| 场效应晶体管技术 | METAL-OXIDE SEMICONDUCTOR | METAL-OXIDE SEMICONDUCTOR |
| 操作模式 | ENHANCEMENT | ENHANCEMENT |
| 晶体管类型 | GENERAL PURPOSE POWER | GENERAL PURPOSE POWER |
| 最大漏电流 | 10 A | 10 A |
| 额定雪崩能量 | 40 mJ | 40 mJ |
| 最大漏极导通电阻 | 0.0130 ohm | 0.0130 ohm |
| 最大漏电流脉冲 | 190 A | 190 A |