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NX6309GH

DFB Laser Diode Emitter, 1280nm Min, 1335nm Max, 1250Mbps, Through Hole Mount, CAN PACKAGE, 4 PIN

器件类别:无线/射频/通信    光纤   

厂商名称:NEC(日电)

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器件参数
参数名称
属性值
厂商名称
NEC(日电)
包装说明
CAN PACKAGE, 4 PIN
Reach Compliance Code
unknown
主体高度
5.17 mm
主体长度或直径
3.75 mm
内置特性
MONITOR PHOTODIODE
数据速率
1250 Mbps
最长下降时间
0.5 ns
光纤设备类型
DFB LASER DIODE EMITTER
安装特点
THROUGH HOLE MOUNT
信道数量
1
最大工作波长
1335 nm
最小工作波长
1280 nm
标称工作波长
1310 nm
上升时间
0.5 ns
最大供电电压
1.6 V
标称供电电压
1.1 V
表面贴装
NO
最小阈值电流
30 mA
传输类型
DIGITAL
文档预览
PRELIMINARY DATA SHEET
LASER DIODE
NX6309GH
1 310 nm InGaAsP MQW-DFB LASER DIODE
FOR 1.25 Gb/s FTTH PON APPLICATION
DESCRIPTION
The NX6309GH is a 1 310 nm Multiple Quantum Well (MQW) structured
Distributed Feed-Back (DFB) laser diode with InGaAs monitor PIN-PD.
APPLICATION
• 1.25 Gb/s FTTH PON (Fiber To The Home Passive Optical Network)
FEATURES
• Optical output power
• Low threshold current
• Differential efficiency
• Wide operating temperature range
• InGaAs monitor PIN-PD
• CAN package
• Focal point
P
o
= 10.0 mW
l
th
= 10 mA
η
d
= 0.40 W/A
T
C
=
−40
to +85°C
φ
5.6 mm
10 mm
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all products and/or types are available in every country. Please check with an NEC Electronics
sales representative for availability and additional information.
Document No. PL10693EJ01V0DS (1st edition)
Date Published November 2007 NS
Printed in Japan
2007
NX6309GH
PACKAGE DIMENSIONS (UNIT: mm)
(
φ
5.6)
*2
*2
*2
(
φ
4.3)
(
φ
3.75)
1.0±0.1
BOTTOM VIEW
1
2
3
4
(0.3)
110˚±2˚
*2
(0.3)
*1
Focal Point
Δ
x = ±200
μ
m MAX.
Δ
y = ±200
μ
m MAX.
*2
PIN CONNECTIONS
10±0.7
1 (CASE)
LD
2
PD
3
4
15.0±1.0 1.2±0.1 3.97±0.1
4–
φ
0.45
φ
2.0
P.C.D
*1
Focal Point: A point to get maximum optical output power from fiber.
*2
( ) indicates nominal dimension.
2
Preliminary Data Sheet PL10693EJ01V0DS
NX6309GH
ORDERING INFORMATION
Part Number
NX6309GH
Package
4-pin CAN with aspherical lens cap
2
PD
3
Pin Connections
1
LD
4
Remark
The hermetic test will be performed as AQL 1.0%.
Preliminary Data Sheet PL10693EJ01V0DS
3
NX6309GH
ABSOLUTE MAXIMUM RATINGS
Parameter
Optical Output Power
Forward Current of LD
Reverse Voltage of LD
Forward Current of PD
Reverse Voltage of PD
Operating Case Temperature
Storage Temperature
Lead Soldering Temperature
Relative Humidity (noncondensing)
Symbol
P
o
I
F
V
R
I
F
V
R
T
C
T
stg
T
sld
RH
Ratings
20
150
2.0
10.0
20
−40
to +85
−40
to +85
350 (3 sec.)
85
Unit
mW
mA
V
mA
V
°C
°C
°C
%
ELECTRO-OPTICAL CHARACTERISTICS (T
C
=
−40
to +85°C, unless otherwise specified)
Parameter
Optical Output Power
Operating Voltage
Threshold Current
Symbol
P
o
V
op
I
th
CW
P
o
= 10.0 mW
T
C
= 25°C
Conditions
MIN.
TYP.
10.0
1.1
10
30
Differential Efficiency
1.6
20
45
W/A
MAX.
Unit
mW
V
mA
η
d
T
C
= 25°C
0.30
0.15
0.40
Peak Emission Wavelength
Side Mode Suppression Ratio
Rise Time
Fall Time
Monitor Current
Monitor Dark Current
Monitor PD Terminal Capacitance
Tracking Error
*1
λ
p
SMSR
t
r
t
f
I
m
I
D
C
t
γ
CW, P
o
= 10.0 mW, RMS (−20 dB)
P
o
= 10.0 mW, RMS (−20 dB)
I
b
= I
th
, 10-90%
I
b
= I
th
, 90-10%
V
R
= 1.5 V, P
o
= 10.0 mW
V
R
= 5 V
V
R
= 5 V
I
m
= const. (@ P
o
= 10.0 mW, T
C
= 25°C)
1 280
30
45
1 335
nm
dB
500
500
80
800
100
20
−1.0
1.0
ps
ps
μ
A
nA
pF
dB
*1
Tracking Error:
γ
P
o
(mW)
T
C
= 25˚C
10.0
T
C
= –40 to +85˚C
P
o
γ
= 10 log
P
o
[dB]
10.0
0
I
m
I
m
(mA)
4
Preliminary Data Sheet PL10693EJ01V0DS
NX6309GH
REFERENCE
Document Name
Opto-Electronics Devices Pamphlet
Document No.
PX10160E
Preliminary Data Sheet PL10693EJ01V0DS
5
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