PRELIMINARY DATA SHEET
LASER DIODE
NX6506 Series
1 550 nm InGaAsP MQW-DFB LASER DIODE
FOR 622 Mb/s, 1.25 Gb/s
DESCRIPTION
The NX6506 Series is a 1 550 nm Multiple Quantum Well (MQW)
structured Distributed Feed-Back (DFB) laser diode with InGaAs monitor PIN-
PD.
APPLICATIONS
• STM-1, STM-4, ITU-T recommendations
• FTTH PON (Fiber To The Home Passive Optical Network)
• 1.25 Gb/s: Gigabit Ethernet
FEATURES
• Optical output power
• Low threshold current
• Differential efficiency
• Side mode suppression ratio
• Wide operating temperature range
• InGaAs monitor PIN-PD
• CAN package
• Focal point
P
o
= 5.0 mW
l
th
= 10 mA
η
d
= 0.25 W/A
SMSR = 40 dB
T
C
=
−20
to +85°C
φ
5.6 mm
7.5 mm
The information in this document is subject to change without notice. Before using this document, please confirm that
this is the latest version.
Not all devices/types available in every country. Please check with local NEC Compound Semiconductor Devices
representative for availability and additional information.
Document No. PL10496EJ01V0DS (1st edition)
Date Published June 2004 CP(K)
Printed in Japan
NEC Compound Semiconductor Devices, Ltd. 2004
NX6506 Series
PACKAGE DIMENSIONS (UNIT: mm)
φ
5.6
+0.00
–0.03
φ
4.3±0.1
φ
3.75±0.05
1.0±0.1
BOTTOM VIEW
1
2
3
4
0.3
+0.1
–0.0
110˚±2˚
Focal Point
7.5±1.0
0.3
+0.1
–0.0
15.0±1.0 1.2±0.1 3.97±0.1
PIN CONNECTIONS
NX6506GH
1 (CASE)
LD
2
4
PD
3
PD
3
2
4
NX6506GK
1 (CASE)
LD
4–
φ
0.45
φ
2.0
P.C.D
2
Preliminary Data Sheet PL10496EJ01V0DS
NX6506 Series
ORDERING INFORMATION
Part Number
NX6506GH
Package
4-pin CAN with aspherical lens cap
2
PD
3
1
LD
2
4
PD
3
Pin Connections
1
LD
4
NX6506GK
Remark
The hermetic test will be performed as AQL 1.0%.
Preliminary Data Sheet PL10496EJ01V0DS
3
NX6506 Series
ABSOLUTE MAXIMUM RATINGS
Parameter
Optical Output Power
Forward Current of LD
Reverse Voltage of LD
Forward Current of PD
Reverse Voltage of PD
Operating Case Temperature
Storage Temperature
Lead Soldering Temperature
Relative Humidity (noncondensing)
Symbol
P
o
I
F
V
R
I
F
V
R
T
C
T
stg
T
sld
RH
Ratings
10
150
2.0
2.0
15
−20
to +85
−40
to +85
350 (3 sec.)
85
Unit
mW
mA
V
mA
V
°C
°C
°C
%
ELECTRO-OPTICAL CHARACTERISTICS (T
C
=
−20
to +85°C, unless otherwise specified)
Parameter
Optical Output Power
Operating Voltage
Threshold Current
Symbol
P
o
V
op
I
th
CW
P
o
= 5.0 mW
T
C
= 25°C
Conditions
MIN.
TYP.
5.0
1.1
10
1.6
20
50
Differential Efficiency
MAX.
Unit
mW
V
mA
η
d
P
o
= 5.0 mW, T
C
= 25°C
P
o
= 5.0 mW
0.18
0.10
0.25
W/A
Temperature Dependence of
Differential Efficiency
Peak Emission Wavelength
Side Mode Suppression Ratio
Rise Time
Fall Time
Monitor Current
Monitor Dark Current
∆η
d
λ
p
SMSR
t
r
t
f
I
m
I
D
∆η
d
= 10 log
η
d
(@ 85°C)
η
d
(@ 25°C)
−3.0
−1.6
dB
CW, P
o
= 5.0 mW
P
o
= 5.0 mW
I
b
= I
th
, 20-80%
I
b
= I
th
, 80-20%
V
R
= 1.5 V, P
o
= 5.0 mW
V
R
= 1.5 V, T
C
= 25°C
V
R
= 1.5 V
1 530
30
40
1 570
nm
dB
100
150
200
600
0.1
10
2 000
10
100
ps
ps
µ
A
nA
4
Preliminary Data Sheet PL10496EJ01V0DS
NX6506 Series
REFERENCE
Document Name
OPTICAL SEMICONDUCTOR DEVICES FOR FIBEROPTIC COMMUNICATIONS SELECTION GUIDE
Opto-Electronics Devices Pamphlet
Document No.
PL10161E
PX10160E
Preliminary Data Sheet PL10496EJ01V0DS
5
