IMPORTANT NOTICE
10 December 2015
1. Global joint venture starts operations as WeEn Semiconductors
Dear customer,
As from November 9th, 2015 NXP Semiconductors N.V. and Beijing JianGuang Asset
Management Co. Ltd established Bipolar Power joint venture (JV),
WeEn Semiconductors,
which
will be used in future Bipolar Power documents together with new contact details.
In this document where the previous NXP references remain, please use the new links as shown
below.
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Email
- For salesaddresses@nxp.com use
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For the copyright notice at the bottom of each page (or elsewhere in the document, depending
on the version) “
©
NXP Semiconductors N.V.
{year}.
All rights reserved”
becomes “
©
WeEn
Semiconductors Co., Ltd.
{year}.
All rights reserved”
If you have any questions related to this document, please contact our nearest sales office via e-
mail or phone (details via
salesaddresses@ween-semi.com).
Thank you for your cooperation and understanding,
WeEn Semiconductors
TO
-2
20A
NXPS20H110C
Dual power Schottky diode
Rev. 2 — 24 May 2012
Product data sheet
1. Product profile
1.1 General description
Dual common cathode power Schottky diode designed for high frequency switched mode
power supplies in a SOT78 (TO-220AB) plastic package.
B
1.2 Features and benefits
High junction temperature capability
Low leakage current
Negligible switching losses
Optimised design to give low V
F
and
high T
j(max)
1.3 Applications
DC to DC converters
Freewheeling diode
OR-ing diode
Switched mode power supply rectifier
1.4 Quick reference data
Table 1.
Symbol
V
RRM
I
F(AV)
Quick reference data
Parameter
repetitive peak reverse voltage
average forward current
square-wave pulse;
δ
= 0.5 ;
T
j
≤
163 °C; per diode; see
Figure 1;
see
Figure 2;
see
Figure 3
square-wave pulse;
δ
= 0.5 ;
T
mb
≤
161 °C; both diodes conducting
Conditions
Min
-
-
Typ
-
-
Max
110
10
Unit
V
A
I
O(AV)
T
j
V
F
I
R
average output current
junction temperature
forward voltage
reverse current
-
-
-
-
-
0.59
2.5
1.5
20
175
0.77
0.64
6
6.5
A
°C
V
V
µA
mA
Static characteristics
I
F
= 10 A; T
j
= 25 °C; see
Figure 6
I
F
= 10 A; T
j
= 125 °C; see
Figure 6
V
R
= 110 V; T
j
= 25 °C; see
Figure 7
V
R
= 110 V; T
j
= 125 °C; see
Figure 7
-
-
-
-
NXP Semiconductors
NXPS20H110C
Dual power Schottky diode
2. Pinning information
Table 2.
Pin
1
2
3
mb
Pinning information
Symbol Description
A1
K
A2
K
anode 1
cathode
anode 2
mounting base; cathode
mb
A1
K
sym125
Simplified outline
Graphic symbol
A2
1 2 3
SOT78 (TO-220AB)
3. Ordering information
Table 3.
Ordering information
Package
Name
NXPS20H110C
TO-220AB
Description
plastic single-ended package; heatsink mounted; 1 mounting
hole; 3-lead TO-220AB
Version
SOT78
Type number
4. Limiting values
Table 4.
Symbol
V
RRM
I
F(AV)
Limiting values
Parameter
repetitive peak reverse voltage
average forward current
square-wave pulse;
δ
= 0.5 ; T
j
≤
163 °C;
per diode; see
Figure 1;
see
Figure 2;
see
Figure 3
square-wave pulse;
δ
= 0.5 ; T
mb
≤
161 °C;
both diodes conducting
sine-wave pulse; t
p
= 10 ms; T
j(init)
= 25 °C;
see
Figure 4
Conditions
Min
-
-
Max
110
10
Unit
V
A
In accordance with the Absolute Maximum Rating System (IEC 60134).
I
O(AV)
I
FSM
T
stg
T
j
average output current
non-repetitive peak forward
current
storage temperature
junction temperature
-
-
-65
-
20
250
175
175
A
A
°C
°C
NXPS20H110C
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2012. All rights reserved.
Product data sheet
Rev. 2 — 24 May 2012
2 of 11
NXP Semiconductors
NXPS20H110C
Dual power Schottky diode
10
P
tot
(W)
8
0.5
6
0.1
003aaj311
δ=1
P
tot
(W)
8
003aaj312
a = 1.57
6
2.8
1.9
2.2
0.2
4
4.0
4
2
2
0
0
4
8
12
I
F(AV)
(A)
16
0
0
2
4
6
8
10
I
F(AV)
(A)
Fig 1.
Forward power dissipation as a function of
average forward current; square waveform; per
diode; maximum values
12
003aaj313
Fig 2.
Forward power dissipation as a function of
average forward current; sinusoidal waveform;
per diode; maximum values
003aaj315
163 °C
10
4
I
FSM
(A)
10
3
I
F(AV)
(A)
8
4
10
2
P
t
p
t
0
-50
0
50
100
150
200
T
mb
(°C)
10
10
-5
10
-4
10
-3
t
p
(s)
10
-2
Fig 3.
Average forward current as a function of
mounting base temperature; per diode;
maximum values
Fig 4.
Non-repetitive peak forward current as a
function of pulse width; square waveform; per
diode; maximum values
NXPS20H110C
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2012. All rights reserved.
Product data sheet
Rev. 2 — 24 May 2012
3 of 11
NXP Semiconductors
NXPS20H110C
Dual power Schottky diode
5. Thermal characteristics
Table 5.
Symbol
R
th(j-mb)
Thermal characteristics
Parameter
Conditions
Min
-
-
-
Typ
-
-
60
Max
1.6
0.9
-
Unit
K/W
K/W
K/W
thermal resistance from junction to with heatsink compound; per diode;
mounting base
see
Figure 5
with heatsink compound; both
diodes conducting
R
th(j-a)
thermal resistance from junction to in free air
ambient
10
Z
th(j-mb)
(K/W)
1
003aaj316
10
-1
P
t
p
T
δ=
10
-2
t
p
t
T
10
-3
10
-6
10
-5
10
-4
10
-3
10
-2
10
-1
1
t
p
(s)
10
Fig 5.
Transient thermal impedance from junction to mounting base as a function of pulse width; per diode
NXPS20H110C
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2012. All rights reserved.
Product data sheet
Rev. 2 — 24 May 2012
4 of 11
