OMD100 OMD400
OMD200 OMD500
FOUR N-CHANNEL MOSFETS IN HERMETIC
POWER PACKAGE
100V Thru 500V, Up To 25 Amp, N-Channel
MOSFET In Hermetic Metal Package
FEATURES
•
•
•
•
Isolated Hermetic Metal Package
Fast Switching
Low R
DS(on)
Available Screened To MIL-S-19500, TX, TXV and S Levels
DESCRIPTION
This series of hermetically packaged products feature the latest advanced MOSFET
and packaging technology. They are ideally suited for Military requirements where
small size, high performance and high reliability are required, and in applications such
as switching power supplies, motor controls, inverters, choppers, audio amplifiers and
high energy pulse circuits.
MAXIMUM RATINGS PER TRANSISTOR
@ 25°C
PART NUMBER
OMD100
OMD200
OMD400
OMD500
V
DS
100V
200V
400V
500V
R
DS(on)
.08
.11
.35
.43
I
D
25A
25A
13A
11A
3.1
SCHEMATIC
CONNECTION DIAGRAM
FET 4
G
S
D
FET 3
G S
D
1.520
.150
.500
MIN.
.260
1.000
SQ.
45°
REF
.170 R.
TYP.
.156 DIA.
TYP.
.040 LEAD
DIA.
D
S
G
G
S
D
.187
TYP.
.125
(10 PLCS)
.625
.050
.270
FET 1
FET 3
4 11 R2
Supersedes 1 07 R1
3.1 - 1
3.1
ELECTRICAL CHARACTERISTICS:
(T
C
= 25°C unless otherwise noted)
(T
C
= 25°C unless otherwise noted)
ELECTRICAL CHARACTERISTICS:
STATIC P/N OMD200 (200V)
Parameter
BV
DSS
Voltage
V
GS(th)
I
GSSF
I
GSSR
I
DSS
Current
0.2
T
C
= 125° C
V
DS
2 V
DS(on)
, V
GS
= 10 V
V
GS
= 10 V, I
D
= 16 A
V
GS
= 10 V, I
D
= 16 A
V
GS
= 10 V, I
D
= 16 A,
T
C
= 125 C
Current
1
30
1.36 1.76
.085 .110
0.14 .200
V
A
1.0
mA
I
D(on)
V
DS(on)
Static Drain-Source On-State
Voltage
1
R
DS(on)
Static Drain-Source On-State
Resistance
1
R
DS(on)
Resistance
1
Static Drain-Source On-State
On-State Drain
V
DS
= 0.8 Max. Rat., V
GS
= 0,
Zero Gate Voltage Drain
0.1
0.25
mA
V
DS
= Max. Rat., V
GS
= 0
Gate-Body Leakage Reverse
-100
nA
V
GS
= - 20 V
Gate-Body Leakage Forward
100
nA
V
GS
= + 20 V
Gate-Threshold Voltage
2.0
4.0
V
V
DS
= V
GS
, I
D
= 250
mA
200
I
D
= 250
mA
V
Drain-Source Breakdown
V
GS
= 0,
Min. Typ. Max. Units Test Conditions
STATIC P/N OMD100 (100V)
V
GS
= 0,
I
D
= 250
mA
V
DS
= V
GS
, I
D
= 250
mA
V
GS
= +20 V
V
GS
= -20 V
V
DS
= Max. Rat., V
GS
= 0
V
DS
= 0.8 Max. Rat., V
GS
= 0,
T
C
= 125° C
V
DS
2 V
DS(on)
, V
GS
= 10 V
V
GS
= 10 V, I
D
= 20 A
V
GS
= 10 V, I
D
= 20 A
V
GS
= 10 V, I
D
= 20 A,
T
C
= 125 C
Parameter
Min. Typ. Max. Units Test Conditions
OMD100 - OMD500
BV
DSS
Drain-Source Breakdown
Voltage
100
V
V
GS(th)
Gate-Threshold Voltage
2.0
4.0
V
I
GSSF
Gate-Body Leakage Forward
100
nA
I
GSSR
Gate-Body Leakage Reverse
- 100
nA
I
DSS
Zero Gate Voltage Drain
0.1
0.25
mA
Current
0.2
1.0
mA
I
D(on)
On-State Drain
Current
1
35
A
V
DS(on)
Static Drain-Source On-State
Voltage
1
1.1
1.60
V
R
DS(on)
Static Drain-Source On-State
Resistance
1
.065 .080
R
DS(on)
Static Drain-Source On-State
Resistance
1
.10
.160
DYNAMIC
g
fs
C
iss
C
oss
C
rss
t
d(on)
t
r
t
d(off)
t
f
Fall Time
Turn-Off Delay Time
85
38
Rise Time
60
Turn-On Delay Time
25
Reverse Transfer Capacitance
250
pF
ns
ns
ns
ns
Output Capacitance
600
pF
Input Capacitance
2400
pF
Forward Transductance
1
10.0 12.5
V
GS
= 0
V
DS
= 25 V
f = 1 MHz
V
DD
= 30 V, I
D
@
20 A
R
g
= 5.0
W
, V
G
= 10V
(MOSFET switching times are
essentially independent of
operating temperature.)
DYNAMIC
S(W
)
V
DS
2 V
DS(on)
, I
D
= 16 A
V
GS
= 0
V
DS
= 25 V
f = 1 MHz
V
DD
= 75 V, I
D
@
16 A
R
g
= 5.0
W
,V
GS
= 10V
(MOSFET switching times are
essentially independent of
operating temperature.)
3.1 - 2
BODY-DRAIN DIODE RATINGS AND CHARACTERISTICS
D
g
fs
Forward
Transductance
1
9.0
10
S(W
)
V
DS
2 V
DS(on)
, I
D
= 20 A
C
iss
Input Capacitance
2700
pF
C
oss
Output Capacitance
1300
pF
C
rss
Reverse Transfer Capacitance
470
pF
t
d(on)
Turn-On Delay Time
28
ns
t
r
Rise Time
45
ns
t
d(off)
Turn-Off Delay Time
100
ns
t
f
Fall Time
50
ns
BODY-DRAIN DIODE RATINGS AND CHARACTERISTICS
Modified MOSPOWER
symbol showing
the integral P-N
Junction rectifier.
S
G
I
S
(Body Diode)
I
SM
(Body Diode)
V
SD
t
rr
Diode Forward Voltage
1
Reverse Recovery Time
Source
Current
1
Continuous Source Current
(Body Diode)
- 40
A
I
S
Continuous Source Current
- 30
- 120
-2
350
I
SM
T
C
= 25 C, I
S
= -40 A, V
GS
= 0
T
J
= 150 C, I
F
= I
S
,
dl
F
/ds = 100 A/ms
Source
Current
1
(Body Diode)
- 160
A
V
SD
Diode Forward Voltage
1
- 2.5
V
t
rr
Reverse Recovery Time
400
ns
ns
1 Pulse Test:
Pulse Width 300msec, Duty Cycle
2%.
1 Pulse Test:
Pulse Width 300msec, Duty Cycle
2%.
(W )
(W )
A
A
V
Modified MOSPOWER
symbol showing
the integral P-N
Junction rectifier.
G
D
S
T
C
= 25 C, I
S
= -30 A, V
GS
= 0
T
J
= 150 C, I
F
= I
S
,
dl
F
/ds = 100 A/ms
ELECTRICAL CHARACTERISTICS:
(T
C
= 25°C unless otherwise noted)
(T
C
= 25°C unless otherwise noted)
ELECTRICAL CHARACTERISTICS:
STATIC P/N OMD500 (500V)
Parameter
BV
DSS
Voltage
V
GS(th)
I
GSSF
I
GSSR
I
DSS
Current
0.2
T
C
= 125° C
V
DS
2 V
DS(on)
, V
GS
= 10 V
V
GS
= 10 V, I
D
= 7.0 A
V
GS
= 10 V, I
D
= 7.0 A
V
GS
= 10 V, I
D
= 7.0 A,
T
C
= 125 C
Current
1
13
2.1
0.35 0.43
0.66 0.88
3.0
V
A
1.0
mA
I
D(on)
V
DS(on)
Static Drain-Source On-State
Voltage
1
R
DS(on)
Static Drain-Source On-State
Resistance
1
R
DS(on)
Resistance
1
Static Drain-Source On-State
On-State Drain
V
DS
= 0.8 Max. Rat., V
GS
= 0,
Zero Gate Voltage Drain
0.1
0.25
mA
V
DS
= Max. Rat., V
GS
= 0
Gate-Body Leakage Reverse
- 100
nA
V
GS
= - 20 V
Gate-Body Leakage Forward
100
nA
V
GS
= +20 V
Gate-Threshold Voltage
2.0
4.0
V
V
DS
= V
GS
, I
D
= 250
mA
500
I
D
= 250
mA
V
Drain-Source Breakdown
V
GS
= 0,
Min. Typ. Max. Units Test Conditions
STATIC P/N OMD400 (400V)
V
GS
= 0,
I
D
= 250
mA
V
DS
= V
GS
, I
D
= 250
mA
V
GS
= +20 V
V
GS
= - 20 V
V
DS
= Max. Rat., V
GS
= 0
V
DS
= 0.8 Max. Rat., V
GS
= 0,
T
C
= 125° C
V
DS
2 V
DS(on)
, V
GS
= 10 V
V
GS
= 10 V, I
D
= 8.0 A
V
GS
= 10 V, I
D
= 8.0 A
V
GS
= 10 V, I
D
= 8.0 A,
T
C
= 125 C
Parameter
Min. Typ. Max. Units Test Conditions
BV
DSS
Drain-Source Breakdown
Voltage
400
V
V
GS(th)
Gate-Threshold Voltage
2.0
4.0
V
I
GSSF
Gate-Body Leakage Forward
100
nA
I
GSSR
Gate-Body Leakage Reverse
- 100
nA
I
DSS
Zero Gate Voltage Drain
0.1
0.25
mA
Current
0.2
1.0
mA
I
D(on)
On-State Drain
Current
1
15
A
V
DS(on)
Static Drain-Source On-State
Voltage
1
2.0
2.8
V
R
DS(on)
Static Drain-Source On-State
Resistance
1
0.30
.35
R
DS(on)
Static Drain-Source On-State
Resistance
1
.60
.70
g
fs
V
GS
= 0
V
DS
= 25 V
f = 1 MHz
V
DD
= 200 V, I
D
@
8.0 A
R
g
=5.0
W
, V
GS
=10V
(MOSFET switching times are
essentially independent of
operating temperature.)
Forward Transductance
1
g
fs
C
iss
C
oss
C
rss
t
d(on)
t
r
t
d(off)
t
f
Fall Time
Turn-Off Delay Time
Rise Time
46
75
31
Turn-On Delay Time
30
Reverse Transfer Capacitance
40
Output Capacitance
280
pF
pF
ns
ns
ns
ns
Input Capacitance
2600
pF
6.0
7.2
6.0
9.6
S(W
)
V
DS
2 V
DS(on)
, I
D
= 8.0 A
Forward Transductance
1
S(W
)
V
DS
2 V
DS(on)
, I
D
= 7.0 A
V
GS
= 0
V
DS
= 25 V
f = 1 MHz
V
DD
= 210 V, I
D
@
7.0 A
R
g
= 5.0
W
, V
GS
= 10 V
(MOSFET switching times are
essentially independent of
operating temperature.)
C
iss
Input Capacitance
2900
pF
C
oss
Output Capacitance
450
pF
C
rss
Reverse Transfer Capacitance
150
pF
t
d(on)
Turn-On Delay Time
30
ns
t
r
Rise Time
40
ns
t
d(off)
Turn-Off Delay Time
80
ns
t
f
Fall Time
30
ns
BODY-DRAIN DIODE RATINGS AND CHARACTERISTICS
Modified MOSPOWER
D
BODY-DRAIN DIODE RATINGS AND CHARACTERISTICS
I
S
(Body Diode)
G
I
S
symbol showing
the integral P-N
Junction rectifier.
S
Continuous Source Current
I
SM
(Body Diode)
V
SD
t
rr
Diode Forward Voltage
1
Reverse Recovery Time
Source Current
1
(Body Diode)
- 15
A
Continuous Source Current
- 13
- 52
- 1.4
700
I
SM
T
C
= 25 C, I
S
= -15 A, V
GS
= 0
T
J
= 100 C, I
F
= I
S
,
dl
F
/ds = 100 A/ms
Source Current
1
(Body Diode)
- 60
A
V
SD
Diode Forward Voltage
1
- 1.6
V
t
rr
Reverse Recovery Time
600
ns
ns
OMD100 - OMD500
1 Pulse Test:
Pulse Width 300msec, Duty Cycle
2%.
1 Pulse Test:
Pulse Width 300msec, Duty Cycle
2%.
(W )
(W )
A
A
V
3.1 - 3
DYNAMIC
DYNAMIC
Modified MOSPOWER
symbol showing
the integral P-N
Junction rectifier.
G
D
S
T
C
= 25 C, I
S
= -13 A, V
GS
= 0
T
J
= 150 C, I
F
= I
S
,
dl
F
/ds = 100 A/ms
3.1
OMD100 - OMD500
ABSOLUTE MAXIMUM RATINGS
(T
C
= 25°C unless otherwise noted)
Parameter
V
DS
V
DGR
I
D
@ T
C
= 25°C
I
D
@ T
C
= 100°C
I
DM
V
GS
P
D
@ T
C
= 25°C
P
D
@ T
C
= 100°C
Junction To Case
Drain-Source Voltage
Drain-Gate Voltage (R
GS
= 1 M )
Continuous Drain Current
2
Continuous Drain Current
2
Pulsed Drain Current
1
Gate-Source Voltage
Maximum Power Dissipation
Maximum Power Dissipation
Linear Derating Factor
OMD100
100
100
± 25
± 16
± 100
± 20
125
50
1.0
.033
OMD200
200
200
± 25
± 16
± 80
± 20
125
50
1.0
.033
OMD400
400
400
± 13
±.8
± 54
± 20
125
50
1.0
.033
OMD500
500
500
± 11
±7
± 40
±20
125
50
1.0
.033
Units
V
V
A
A
A
V
W
W
W/°C
W/°C
Junction To Ambient Linear Derating Factor
T
J
T
stg
Lead Temperature
Operating and
Storage Temperature Range
(1/16" from case for 10 secs.)
-55 to 150
300
-55 to 150 -55 to 150 -55 to 150
300
300
300
°C
°C
1 Pulse Test:
Pulse width 300 µsec. Duty Cycle 2%.
2 Package pin limitation = 10 Amps
THERMAL RESISTANCE
R
thJC
R
thJA
Junction-to-Case
Junction-to-Ambient
1.0
30
°C/W
°C/W
Free Air Operation
POWER DERATING
3.1
PACKAGE OPTIONS
MOD PAK
6 PIN SIP
Note: MOSFETs are also available in Z-Tab, dual and quad pak styles. Please call the factory for more information.
205 Crawford Street, Leominster, MA 01453 USA (508) 534-5776 FAX (508) 537-4246
