OMY140 OMY340
OMY240 OMY440
POWER MOSFETS IN HERMETIC ISOLATED
TO-257AA PACKAGE
100V Thru 500V, Up To 14 Amp, N-Channel
MOSFETs In Hermetic Metal Package
FEATURES
•
•
•
•
•
Isolated Hermetic Metal Package
Fast Switching
Low R
DS(on)
Available Screened To MIL-S-19500, TX, TXV And S Levels
Equivalent To IRFY 140 Series
DESCRIPTION
This series of hermetically packaged products feature the latest advanced MOSFET
and packaging technology. They are ideally suited for Military requirements where
small size, high performance and high reliability are required, and in applications such
as switching power supplies, motor controls, inverters, choppers, audio amplifiers and
high energy pulse circuits.
MAXIMUM RATINGS
@ 25°C
PART NUMBER
OMY140
OMY240
OMY340
OMY440
V
DS
100V
200V
400V
500V
R
DS(on)
.115
.21
.58
.88
I
D(MAX)
14A
14A
10A
7A
3.1
SCHEMATIC
CONNECTION DIAGRAM
1. GATE
2. DRAIN
3. SOURCE
1 2 3
4 11 R2
Supersedes 1 07 R1
3.1 - 5
3.1
OMY140 - OMY440
ELECTRICAL CHARACTERISTICS:
STATIC P/N OMY140
Parameter
BV
DSS
Drain-Source Breakdown
Voltage
V
GS(th)
I
GSSF
I
GSSR
I
DSS
Gate-Threshold Voltage
Gate-Body Leakage Forward
Gate-Body Leakage Reverse
Zero Gate Voltage Drain
Current
I
D(on)
On-State Drain
Voltage
1
R
DS(on)
Static Drain-Source On-State
Resistance
1
R
DS(on)
Static Drain-Source On-State
Resistance
1
Current
1
14
0.1
0.2
2.0
100
T
C
= 25° unless otherwise noted
ELECTRICAL CHARACTERISTICS:
STATIC P/N OMY240
Parameter
BV
DSS
Drain-Source Breakdown
Voltage
V
GS(th)
I
GSSF
I
GSSR
I
DSS
Gate-Threshold Voltage
Gate-Body Leakage Forward
Gate-Body Leakage Reverse
Zero Gate Voltage Drain
Current
I
D(on)
On-State Drain
Voltage
1
Current
1
14
1.8
0.1
0.2
2.0
200
T
C
= 25° unless otherwise noted
Min. Typ. Max. Units Test Conditions
V
4.0
100
-100
0.25
1.0
V
nA
nA
mA
mA
A
1.40 1.73
.115
.20
V
V
GS
= 0,
I
D
= 250
mA
V
DS
= V
GS
, I
D
= 250
mA
V
GS
= 20 V
V
GS
= - 20 V
V
DS
= Max. Rat., V
GS
= 0
V
DS
= 0.8 Max. Rat., V
GS
= 0,
T
C
= 125° C
V
DS
2 V
DS(on)
, V
GS
= 10 V
V
GS
= 10 V, I
D
= 15 A
V
GS
= 10 V, I
D
= 15 A
V
GS
= 10 V, I
D
= 15 A,
T
C
= 125 C
Min. Typ. Max. Units Test Conditions
V
4.0
100
- 100
0.25
1.0
V
nA
nA
mA
mA
A
2.1
0.21
0.40
V
V
GS
= 0,
I
D
= 250
mA
V
DS
= V
GS,
I
D
= 250
mA
V
GS
= 20 V
V
GS
= - 20 V
V
DS
= Max. Rat., V
GS
= 0
V
DS
= 0.8 Max. Rat., V
GS
= 0,
T
C
= 125° C
V
DS
2 V
DS(on)
, V
GS
= 10 V
V
GS
= 10 V, I
D
= 10 A
V
GS
= 10 V, I
D
= 10 A
V
GS
= 10 V, I
D
= 10 A,
T
C
= 125 C
V
DS(on)
Static Drain-Source On-State
V
DS(on)
Static Drain-Source On-State
R
DS(on)
Static Drain-Source On-State
Resistance
1
R
DS(on)
Static Drain-Source On-State
Resistance
1
g
fs
C
iss
C
oss
C
rss
T
d(on)
t
r
T
d(off)
t
f
Forward Transductance
1
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
10
1275
550
160
16
19
42
24
S(W
)
V
DS
2 V
DS(on)
, I
D
= 15 A
pF
pF
pF
ns
ns
ns
ns
V
GS
= 0
V
DS
= 25 V
f = 1 MHz
V
DD
= 30 V, I
D
@5
A
R
g
= 5
W
, V
GS
=10 V
(MOSFET) switching times are
essentially independent of
operating temperature.
g
fs
C
iss
C
oss
C
rss
T
d(on)
t
r
T
d(off)
t
f
Forward Transductance
1
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
6.0
1000
250
100
17
52
36
30
S(W
)
V
DS
2 V
DS(on)
, I
D
= 10 A
pF
pF
pF
ns
ns
ns
ns
V
GS
= 0
V
DS
= 25 V
f = 1 MHz
V
DD
=75 V, I
D
@
18 A
R
g
=5
W
, V
GS
= 10 V
(MOSFET) switching times are
essentially independent of
operating temperature.
BODY-DRAIN DIODE RATINGS AND CHARACTERISTICS
I
S
I
SM
V
SD
t
rr
Continuous Source Current
(Body Diode)
Source Current
1
(Body Diode)
Diode Forward
Voltage
1
200
- 2.0
V
ns
Reverse Recovery Time
- 108
A
- 27
A
Modified MOSPOWER
symbol showing
the integral P-N
Junction rectifier.
G
D
BODY-DRAIN DIODE RATINGS AND CHARACTERISTICS
I
S
I
SM
S
Continuous Source Current
(Body Diode)
Source Current
1
(Body Diode)
Diode Forward
Voltage
1
350
- 18
- 72
-1.5
A
A
V
ns
T
C
= 25 C, I
S
= -24 A, V
GS
= 0
T
J
= 150 C,I
F
= I
S
,
dl
F
/ds = 100 A/ms
V
SD
t
rr
Reverse Recovery Time
1 Pulse Test:
Pulse Width 300msec, Duty Cycle
2%.
1 Pulse Test:
Pulse Width 300msec, Duty Cycle
2%.
(W )
(W )
3.1 - 6
DYNAMIC
DYNAMIC
Modified MOSPOWER
symbol showing
the integral P-N
Junction rectifier.
G
D
S
T
C
= 25 C, I
S
= -18 A, V
GS
= 0
T
J
= 150 C,I
F
= I
S
,
dl
F
/ds = 100 A/ms
ELECTRICAL CHARACTERISTICS:
STATIC P/N OMY340
Parameter
BV
DSS
Drain-Source Breakdown
Voltage
V
GS(th)
I
GSSF
I
GSSR
I
DSS
Gate-Threshold Voltage
Gate-Body Leakage Forward
Gate-Body Leakage Reverse
Zero Gate Voltage Drain
Current
I
D(on)
On-State Drain Current
1
Voltage
1
R
DS(on)
Static Drain-Source On-State
Resistance
1
R
DS(on)
Static Drain-Source On-State
Resistance
1
10
2.5
0.1
0.2
2.0
400
T
C
= 25° unless otherwise noted
ELECTRICAL CHARACTERISTICS:
STATIC P/N OMY440
Parameter
BV
DSS
Drain-Source Breakdown
Voltage
V
GS(th)
I
GSSF
I
GSSR
I
DSS
Gate-Threshold Voltage
Gate-Body Leakage Forward
Gate-Body Leakage Reverse
Zero Gate Voltage Drain
Current
I
D(on)
On-State Drain Current
1
Voltage
1
4.5
3.2
0.1
0.2
2.0
500
T
C
= 25° unless otherwise noted
Min. Typ. Max. Units Test Conditions
V
4.0
100
-100
0.25
1.0
V
nA
nA
mA
mA
A
2.9
0.58
1.16
V
V
GS
= 0,
I
D
= 250
mA
V
DS
= V
GS
, I
D
= 250
mA
V
GS
= 20 V
V
GS
= - 20 V
V
DS
= Max. Rat., V
GS
= 0
V
DS
= 0.8 Max. Rat., V
GS
= 0,
T
C
= 125° C
V
DS
2 V
DS(on)
, V
GS
= 10 V
V
GS
= 10 V, I
D
= 5 A
V
GS
= 10 V, I
D
= 5 A
V
GS
= 10 V, I
D
= 5 A,
T
C
= 125 C
Min. Typ. Max. Units Test Conditions
V
4.0
100
- 100
0.25
1.0
V
nA
nA
mA
mA
A
3.52
0.88
1.76
V
V
GS
= 0,
I
D
= 250
mA
V
DS
= V
GS,
I
D
= 250
mA
V
GS
= 20 V
V
GS
= - 20 V
V
DS
= Max. Rat., V
GS
= 0
V
DS
= 0.8 Max. Rat., V
GS
= 0,
T
C
= 125° C
V
DS
2 V
DS(on)
, V
GS
= 10 V
V
GS
= 10 V, I
D
= 4 A
V
GS
= 10 V, I
D
= 4 A
V
GS
= 10 V, I
D
= 4 A,
T
C
= 125 C
V
DS(on)
Static Drain-Source On-State
V
DS(on)
Static Drain-Source On-State
R
DS(on)
Static Drain-Source On-State
Resistance
1
R
DS(on)
Static Drain-Source On-State
Resistance
1
g
fs
C
iss
C
oss
C
rss
T
d(on)
t
r
T
d(off)
t
f
Forward Transductance
1
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
4.0
4.4
1150
165
70
17
12
45
30
S(W
)
V
DS
2 V
DS(on)
, I
D
= 5 A
pF
pF
pF
ns
ns
ns
ns
V
GS
= 0
V
DS
= 25 V
f = 1 MHz
V
DD
= 175 V, I
D
=
5 A
R
g
= 5
W
, V
DS
=10V
g
fs
C
iss
C
oss
C
rss
T
d(on)
t
r
T
d(off)
t
f
Forward Transductance
1
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
4.0
4.8
1225
200
85
17
5
42
14
S(W
)
V
DS
2 V
DS(on)
, I
D
= 4 A
pF
pF
pF
ns
ns
ns
ns
V
GS
= 0
V
DS
= 25 V
f = 1 MHz
V
DD
= 200 V, I
D
=
4 A
R
g
= 5
W
, V
DS
=10 V
(MOSFET) switching times are
essentially independent of
operating temperature.
BODY-DRAIN DIODE RATINGS AND CHARACTERISTICS
I
S
I
SM
V
SD
t
rr
Continuous Source Current
(Body Diode)
Source Current
1
(Body Diode)
Diode Forward
Voltage
1
530
-2
V
ns
Reverse Recovery Time
- 40
A
- 10
A
Modified MOSPOWER
symbol showing
the integral P-N
Junction rectifier.
G
D
BODY-DRAIN DIODE RATINGS AND CHARACTERISTICS
I
S
I
SM
S
Continuous Source Current
(Body Diode)
Source Current
1
(Body Diode)
Diode Forward
Voltage
1
700
-8
- 32
-2
T
C
= 25 C, I
S
= -10 A, V
GS
= 0
T
J
= 150 C,I
F
= I
S
,
dl
F
/ds = 100 A/ms
V
SD
t
rr
Reverse Recovery Time
ns
1 Pulse Test:
Pulse Width 300msec, Duty Cycle
2%.
1 Pulse Test:
Pulse Width 300msec, Duty Cycle
2%.
(W )
A
A
V
(W )
3.1 - 7
DYNAMIC
DYNAMIC
Modified MOSPOWER
symbol showing
the integral P-N
Junction rectifier.
G
D
S
T
C
= 25 C, I
S
= -18 A, V
GS
= 0
T
J
= 150 C,I
F
= I
S
,
dl
F
/ds = 100 A/ms
OMY140 - OMY440
3.1
OMY140 - OMY440
ABSOLUTE MAXIMUM RATINGS
(T
C
= 25°C unless otherwise noted)
Parameter
V
DS
V
DGR
I
D
@ T
C
= 25°C
I
D
@ T
C
= 100°C
I
DM
V
GS
P
D
@ T
C
= 25°C
P
D
@ T
C
= 100°C
Junction To Case
Drain-Source Voltage
Drain-Gate Voltage (R
GS
= 1 M )
Continuous Drain Current
2
Continuous Drain Current
2
Pulsed Drain Current
1
Gate-Source Voltage
Maximum Power Dissipation
Maximum Power Dissipation
Linear Derating Factor
OMY140
100
100
± 14
± 14
± 56
± 20
125
50
1.0
.015
OMY240
200
200
± 14
± 11
± 56
± 20
125
50
1.0
.015
OMY340
400
400
± 10
±6
± 40
± 20
125
50
1.0
.015
OMY440
500
500
±8
±5
± 32
± 20
125
50
1.0
.015
Units
V
V
A
A
A
V
W
W
W/°C
W/°C
Junction To Ambient Linear Derating Factor
T
J
T
stg
Lead Temperature
Operating and
Storage Temperature Range
(1/16" from case for 10 secs.)
-55 to 150
300
-55 to 150 -55 to 150 -55 to 150
300
300
300
°C
°C
1 Pulse Test:
Pulse width 300 µsec. Duty Cycle 2%.
2 Package pin limitation = 10 Amps
THERMAL RESISTANCE
R
thJC
R
thJA
Junction-to-Case
Junction-to-Ambient
1.00
65
°C/W
°C/W
Free Air Operation
POWER DERATING
MECHANICAL OUTLINE
.420
.410
.200
.190
.045
.035
.665
.645
.537
.527
.430
.410
.038 MAX.
.150
.140
3.1
.750
.500
.005
.035
.025
.100 TYP.
.120 TYP.
PACKAGE OPTIONS
MOD PAK
6 PIN SIP
Note: MOSFETs are also available in Z-Tab, dual and quad pak styles. Please call the factory for more information.
205 Crawford Street, Leominster, MA 01453 USA (508) 534-5776 FAX (508) 537-4246
