Transmissive Photosensors (Photo Interrupters)
CNZ1021,CNZ1022,CNZ1023,CNA1009H
(ON1021, ON1022, ON1023, ON1024)
Photo Interrupters
Overview
CNZ1021 series is a transmissive photosensor series
in which a high efficiency GaAs infrared light emitting
diode is used as the light emitting element, and a high
sensitivity phototransistor is used as the light detecting
element. The two elements are arranged so as to face
each other, and objects passing between them are
detected.
CNZ1021
∑
∑
Features
Position detection accuracy : 0.25 mm
Gap width : 3 mm (CNZ1021, CNZ1022, CNZ1023)
5 mm (CNA1009H)
The type directly attached to PCB ........... CNZ1021
Screw-fastened type (both sides) ............. CNZ1022
Screw-fastened type (one side) ................ CNZ1023
The type directly attached to PCB ........ CNA1009H
(with a positioning pins)
CNZ1022
2-R1.5
Unit : mm
Unit : mm
25.0
19.0±0.15
3.0
+0.15
–0
12.0
0.5
3.5
12.0
3.0±0.15
A
ø3.0
+0.15
–0
6.0
5.0
0.4±0.1
Device
center
A'
(2-0.45)
(7.6)
(C1.2)
(2.5)
10.0
2.1±0.15
Device
center
10.0
(2.5)
3.0±0.15
A
5.0
0.4±0.1
(C1.2)
10.0 min.
2.5
(2-0.45)
(7.6)
2
3
(2-0.45)
(2.54)
SEC. A-A'
10.0 min.
3.0
A'
2
2
1
4
1
1
Pin connection
4
3
3
(2-C1.2)
(2-0.45)
(2.54)
SEC. A-A'
2
3
4
1
Pin connection
4
CNZ1023
∑
Unit : mm
CNA1009H
∑
2.5
2.1±0.15
Unit : mm
2.0
12.0
(2.5)
18.0
12.0±0.15
5.0
0.4±0.1
(4-R2)
Device
center
(C1.2)
14.0
5.0±0.15
A
0.5±0.1
Device
center
A'
6.0
5.0
(C1)
(2.5)
3.0±0.15
A
10.0
2-R1.5
2.1±0.15
10.0 min.
2.5
ø3.0
+0.15
–0
(2-0.45)
(7.6)
3.0
+0.15
–0
A'
0.5
3.5
(2-0.45)
(2.54)
SEC. A-A'
2
10.0 min.
2.5
2-0.7
(2-0.45)
5.2±0.1
(10.0)
2
3
2-ø0.7±0.1
(2-0.45)
(2.54)
SEC. A-A'
2
1
3
4
3
1
2.35±0.1
4
6.6±0.1
2
2.2±0.15
10.0
6.0
3
1
Pin connection
4
1
Pin connection
4
(Note) 1. Tolerance unless otherwise specified is ±0.3.
2. ( ) Dimension is reference.
Note) The part numbers in the parenthesis show conventional part number.
1
Transmissive Photosensors (Photo Interrupters)
Absolute Maximum Ratings
(Ta = 25˚C)
Parameter
Reverse voltage (DC)
Input (Light
Forward current (DC)
emitting diode)
Power dissipation
Collector current
Symbol Ratings
V
R
I
F
P
D*1
I
C
5
50
75
20
30
5
100
Unit
V
mA
mW
mA
V
V
mW
˚C
˚C
CNZ1021,CNZ1022,CNZ1023,CNA1009H
Output (Photo Collector to emitter voltage V
CEO
transistor)
Emitter to collector voltage V
ECO
Collector power dissipation
Temperature
*1
*2
P
C*2
Operating ambient temperature
Storage temperature
T
opr
–25 to +85
T
stg
–40 to +100
Input power derating ratio is 1.0 mW/˚C at Ta
≥
25˚C.
Output power derating ratio is 1.33 mW/˚C at Ta
≥
25˚C.
Electrical Characteristics
(Ta = 25˚C)
Parameter
Forward voltage (DC)
Input
characteristics Reverse current (DC)
Output characteristics Collector cutoff current
Symbol
V
F
I
R
I
CEO
V
R
= 3V
V
CE
= 10V
0.5
5
10
Conditions
I
F
= 20mA
min
typ
1.25
max
1.4
10
200
15
0.4
Unit
V
µA
nA
mA
V
µs
Collector current
I
C
V
CC
= 5V, I
F
= 20mA, R
L
= 100Ω
Transfer
characteristics Collector to emitter saturation voltage V
CE(sat)
I
F
= 40mA, I
C
= 1mA
Response time
t
r
, t
f*
V
CC
= 5V, I
C
= 1mA, R
L
= 100Ω
*
Switching time measurement circuit
Sig.IN
V
CC
(Input pulse)
Sig.OUT (Output pulse)
90%
10%
t
d
t
r
t
f
;;
2
;
;
50Ω
R
L
t
d
: Delay time
t
r
: Rise time (Time required for the collector current to increase
from 10% to 90% of its final value)
t
f
: Fall time (Time required for the collector current to decrease
from 90% to 10% of its initial value)
CNZ1021,CNZ1022,CNZ1023,CNA1009H
Transmissive Photosensors (Photo Interrupters)
I
F
, I
C
— Ta
60
60
I
F
— V
F
1.6
Ta = 25˚C
V
F
— Ta
I
F
= 50mA
I
F
, I
C
(mA)
50
I
F
50
I
F
(mA)
Forward current, collector current
V
F
(V)
1.2
10mA
1mA
0.8
40
40
Forward current
30
I
C
30
20
20
Forward voltage
0
0.4
0.8
1.2
1.6
2.0
2.4
0.4
10
10
0
– 25
0
20
40
60
80
100
0
0
– 40 – 20
0
20
40
60
80
100
Ambient temperature Ta (˚C )
Forward voltage V
F
(V)
Ambient temperature Ta (˚C )
I
C
— I
F
10
2
V
CE
= 5V
Ta = 25˚C
10
2
I
C
— V
CE
160
Ta = 25˚C
I
C
— Ta
V
CE
= 5V
I
F
= 20mA
I
C
(mA)
10
I
C
(mA)
10
I
F
= 30mA
20mA
10mA
I
C
(%)
Relative output current
10
2
120
Collector current
1
Collector current
1
80
10
–1
10
–1
40
10
–2
10
–1
1
10
10
2
10
–2
10
–1
1
10
0
– 40 – 20
0
20
40
60
80
100
Forward current I
F
(mA)
Collector to emitter voltage V
CE
(V)
Ambient temperature Ta (˚C )
I
CEO
— Ta
10
3
V
CE
= 10V
10
2
t
r
— I
C
V
CC
= 5V
Ta = 25˚C
100
I
C
— d
V
CE
= 5V
Ta = 25˚C
I
F
= 20mA
10
2
I
C
(%)
I
CEO
(nA)
10
R
L
= 1kΩ
500Ω
100Ω
80
Criterion
0
d
60
t
r
(µs)
10
Dark current
1
Rise time
1
Relative output current
40
10
–1
10
–1
Sig.IN
Sig.
OUT
50Ω
V
CC
Sig.
OUT
R
L
90%
10%
20
10
–2
;
;;
10
–2
10
–1
1
t
r
t
d
t
f
10
2
0
0
1
2
3
4
5
6
– 40 – 20
0
20
40
60
80
100
10
Ambient temperature Ta (˚C )
Collector current I
C
(mA)
Distance d (mm)
3
Caution for Safety
Gallium arsenide material (GaAs) is used
in this product.
DANGER
Therefore, do not burn, destroy, cut, crush, or chemi-
cally decompose the product, since gallium arsenide
material in powder or vapor form is harmful to human
health.
Observe the relevant laws and regulations when dispos-
ing of the products. Do not mix them with ordinary in-
dustrial waste or household refuse when disposing of
GaAs-containing products.
Request for your special attention and precautions in using the technical information
and semiconductors described in this material
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•
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•
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2001 MAR
