Transmissive Photosensors (Photo Interrupters)
CNZ1102, CNZ1108
(ON1102, ON1108)
Photo Interrupters
CNZ1102
Unit : mm
25.0±0.35
13.0±0.3
3.0±0.2
For contactless SW, object detection
Overview
CNZ1102 and CNZ1108 are a photocoupler in which a high
efficiency GaAs infrared light emitting diode is used as the light
emitting element, and a high sensitivity phototransistor is used as
the light detecting element. The two elements are arranged so as to
face each other, and objects passing between them are detected.
Mark for
indicating
LED side
Device
center
7.0 min.
2.5±0.2
10.0±0.2
2-0.45±0.2
*9.6±0.3
Features
Position detection accuracy : 1.2 mm
Large output current
Fast response : t
r
, t
f
= 4
µs
(typ.) (CNZ1102)
6
µs
(typ.) (CNZ1108)
Small output current variation against change in temperature
Small package used for saving mounting space (CNZ1108)
2-ø3.2±0.2
19.0±0.2
2
3
6.2±0.2
*2.54±0.2
1
2
3.0±0.3
4
3
1
Pin connection
(Note) * is dimension at the root of leads
4
Absolute Maximum Ratings
(Ta = 25˚C)
Parameter
Input (Light
Forward current (DC)
emitting diode)
Power dissipation
Collector current
Reverse voltage (DC)
Symbol Ratings
V
R
I
F
P
D*1
I
C
3
50
75
20
30
5
100
Unit
V
mA
mW
mA
V
V
mW
˚C
˚C
CNZ1108
Mark for indicating
LED side
13.0±0.3
3.0±0.2
A
Unit : mm
3.5±0.2
Device
center
7.0 min. 10.0±0.2
2.5±0.2
Output (Photo Collector to emitter voltage V
CEO
transistor)
Emitter to collector voltage V
ECO
Collector power dissipation
Temperature
*1
A'
4- 0.45±0.2
*2.54±0.2
3
2
SEC. A-A'
3
P
C*2
*9.4±0.3
2
Operating ambient temperature
Storage temperature
T
opr
–25 to +85
T
stg
–30 to +100
Input power derating ratio is 1.0 mW/˚C at Ta
≥
25˚C.
*2
Output power derating ratio is 1.33 mW/˚C at Ta
≥
25˚C.
6.2±0.2
1
4
1
Pin connection
4
(Note) * is dimension at the root of leads
Note) The part numbers in the parenthesis show conventional part number.
;;
;
1
3.0±0.3
CNZ1102,CNZ1108
Transmissive Photosensors (Photo Interrupters)
Electrical Characteristics
(Ta = 25˚C)
Parameter
Forward voltage (DC)
Input
Reverse current (DC)
characteristics
Capacitance between terminals
Collector cutoff current
Output
characteristics Collector to emitter capacitance
Collector current
Symbol
V
F
I
R
C
t
I
CEO
C
C
I
C*2
V
R
= 3V
V
R
= 0V, f = 1MHz
V
CE
= 10V
V
CE
= 10V, f = 1MHz
V
CE
= 10V, I
F
= 20mA
2
4
6
0.4
0.4
5
50
200
Conditions
I
F
= 50mA
min
typ
1.2
max
1.5
10
Unit
V
µA
pF
nA
pF
mA
µs
µs
V
V
CNZ1102
V
CC
= 10V, I
C
= 5mA, R
L
= 100Ω
Response time
t
r
, t
f*1
Transfer
CNZ1108
V
CC
= 10V, I
C
= 1mA, R
L
= 100Ω
characteristics
Collector to emitter CNZ1102 V
CE(sat)
I
F
= 50mA, I
C
= 1mA
Saturation voltage
*1
CNZ1108 V
CE(sat)
I
F
= 50mA, I
C
= 0.1mA
Switching time measurement circuit
Sig.IN
V
CC
(Input pulse)
Sig.OUT (Output pulse)
90%
10%
t
d
t
r
t
f
t
d
: Delay time
t
r
: Rise time (Time required for the collector current to increase
from 10% to 90% of its final value)
t
f
: Fall time (Time required for the collector current to decrease
from 90% to 10% of its initial value)
;;
*2
I
C
classifications
Class
I
C
(mA)
Q
2.0 to 5.0
R
4.0 to 10.0
S
7.0 to 20.0
;
;
50Ω
R
L
I
F
, I
C
— Ta
60
60
I
F
— V
F
10
2
Ta = 25˚C
I
C
— I
F
V
CE
= 10V
Ta = 25˚C
I
F
, I
C
(mA)
50
I
F
50
I
F
(mA)
I
C
(mA)
Collector current
10
Forward current, collector current
40
40
Forward current
30
I
C
30
1
20
20
10
–1
10
10
0
– 25
0
20
40
60
80
100
0
0
0.4
0.8
1.2
1.6
2.0
2.4
10
–2
10
–1
1
10
10
2
Ambient temperature Ta (˚C )
Forward voltage V
F
(V)
Forward current I
F
(mA)
2
Transmissive Photosensors (Photo Interrupters)
CNZ1102,CNZ1108
V
F
— Ta
1.6
10
2
I
C
— V
CE
160
Ta = 25˚C
I
C
— Ta
V
CE
= 10V
I
F
= 20mA
I
C
(mA)
V
F
(V)
1.2
I
F
= 50mA
10
20mA
10mA
I
C
(%)
Relative output current
I
F
= 30mA
120
Forward voltage
Collector current
10mA
0.8
1
80
0.4
10
–1
40
0
– 40 – 20
0
20
40
60
80
100
10
–2
10
–1
1
10
10
2
0
– 40 – 20
0
20
40
60
80
100
Ambient temperature Ta (˚C )
Collector to emitter voltage V
CE
(V)
Ambient temperature Ta (˚C )
I
CEO
— Ta
10
10
3
t
r
— I
C
V
CC
= 10V
Ta = 25˚C
100
I
C
— d
Criterion
0
1
I
C
(%)
80
d
I
CEO
(µA)
10
2
t
r
(µs)
10
–1
R
L
= 1kΩ
10
500Ω
100Ω(ON1108)
100Ω(ON1102)
1
Sig.IN
V
CC
Sig. V
1
OUT
V
2
V
2
R
L
90%
10%
Relative output current
60
Dark current
10
–2
V
CE
= 24V
10V
Rise time
40
10
–3
V
1
50Ω
20
;
;
10
–1
10
–2
10
–1
10
–4
– 40 – 20
t
r
1
t
d
t
f
10
0
0
1
2
3
4
5
6
0
20
40
60
80
100
Ambient temperature Ta (˚C )
Collector current I
C
(mA)
Distance d (mm)
3
Caution for Safety
Gallium arsenide material (GaAs) is used
in this product.
DANGER
Therefore, do not burn, destroy, cut, crush, or chemi-
cally decompose the product, since gallium arsenide
material in powder or vapor form is harmful to human
health.
Observe the relevant laws and regulations when dispos-
ing of the products. Do not mix them with ordinary in-
dustrial waste or household refuse when disposing of
GaAs-containing products.
Request for your special attention and precautions in using the technical information
and semiconductors described in this material
(1) An export permit needs to be obtained from the competent authorities of the Japanese Government if any of the
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(2) The technical information described in this material is limited to showing representative characteristics and
applied circuit examples of the products. It does not constitute the warranting of industrial property, the granting
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Consult our sales staff in advance for information on the following applications:
•
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•
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2001 MAR