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ON1102

For contactless SW, object detection

器件类别:光电子/LED    光电   

厂商名称:Panasonic(松下)

厂商官网:http://www.panasonic.co.jp/semicon/e-index.html

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器件参数
参数名称
属性值
厂商名称
Panasonic(松下)
包装说明
PISTR104-005, 4 PIN
Reach Compliance Code
unknown
Coll-Emtr Bkdn Voltage-Min
30 V
配置
SINGLE
最大暗电源
200 nA
最大正向电流
0.05 A
安装特点
THROUGH HOLE MOUNT
功能数量
1
最大通态电流
0.001 A
最大通态电压
30 V
标称通态集电极电流
2 mA
最高工作温度
85 °C
最低工作温度
-25 °C
光电设备类型
TRANSISTOR OUTPUT SLOTTED SWITCH
输出电路类型
Transistor
标称槽宽
3 mm
表面贴装
NO
文档预览
Transmissive Photosensors (Photo Interrupters)
CNZ1102, CNZ1108
(ON1102, ON1108)
Photo Interrupters
CNZ1102
Unit : mm
25.0±0.35
13.0±0.3
3.0±0.2
For contactless SW, object detection
Overview
CNZ1102 and CNZ1108 are a photocoupler in which a high
efficiency GaAs infrared light emitting diode is used as the light
emitting element, and a high sensitivity phototransistor is used as
the light detecting element. The two elements are arranged so as to
face each other, and objects passing between them are detected.
Mark for
indicating
LED side
Device
center
7.0 min.
2.5±0.2
10.0±0.2
2-0.45±0.2
*9.6±0.3
Features
Position detection accuracy : 1.2 mm
Large output current
Fast response : t
r
, t
f
= 4
µs
(typ.) (CNZ1102)
6
µs
(typ.) (CNZ1108)
Small output current variation against change in temperature
Small package used for saving mounting space (CNZ1108)
2-ø3.2±0.2
19.0±0.2
2
3
6.2±0.2
*2.54±0.2
1
2
3.0±0.3
4
3
1
Pin connection
(Note) * is dimension at the root of leads
4
Absolute Maximum Ratings
(Ta = 25˚C)
Parameter
Input (Light
Forward current (DC)
emitting diode)
Power dissipation
Collector current
Reverse voltage (DC)
Symbol Ratings
V
R
I
F
P
D*1
I
C
3
50
75
20
30
5
100
Unit
V
mA
mW
mA
V
V
mW
˚C
˚C
CNZ1108
Mark for indicating
LED side
13.0±0.3
3.0±0.2
A
Unit : mm
3.5±0.2
Device
center
7.0 min. 10.0±0.2
2.5±0.2
Output (Photo Collector to emitter voltage V
CEO
transistor)
Emitter to collector voltage V
ECO
Collector power dissipation
Temperature
*1
A'
4- 0.45±0.2
*2.54±0.2
3
2
SEC. A-A'
3
P
C*2
*9.4±0.3
2
Operating ambient temperature
Storage temperature
T
opr
–25 to +85
T
stg
–30 to +100
Input power derating ratio is 1.0 mW/˚C at Ta
25˚C.
*2
Output power derating ratio is 1.33 mW/˚C at Ta
25˚C.
6.2±0.2
1
4
1
Pin connection
4
(Note) * is dimension at the root of leads
Note) The part numbers in the parenthesis show conventional part number.
;;
;
1
3.0±0.3
CNZ1102,CNZ1108
Transmissive Photosensors (Photo Interrupters)
Electrical Characteristics
(Ta = 25˚C)
Parameter
Forward voltage (DC)
Input
Reverse current (DC)
characteristics
Capacitance between terminals
Collector cutoff current
Output
characteristics Collector to emitter capacitance
Collector current
Symbol
V
F
I
R
C
t
I
CEO
C
C
I
C*2
V
R
= 3V
V
R
= 0V, f = 1MHz
V
CE
= 10V
V
CE
= 10V, f = 1MHz
V
CE
= 10V, I
F
= 20mA
2
4
6
0.4
0.4
5
50
200
Conditions
I
F
= 50mA
min
typ
1.2
max
1.5
10
Unit
V
µA
pF
nA
pF
mA
µs
µs
V
V
CNZ1102
V
CC
= 10V, I
C
= 5mA, R
L
= 100Ω
Response time
t
r
, t
f*1
Transfer
CNZ1108
V
CC
= 10V, I
C
= 1mA, R
L
= 100Ω
characteristics
Collector to emitter CNZ1102 V
CE(sat)
I
F
= 50mA, I
C
= 1mA
Saturation voltage
*1
CNZ1108 V
CE(sat)
I
F
= 50mA, I
C
= 0.1mA
Switching time measurement circuit
Sig.IN
V
CC
(Input pulse)
Sig.OUT (Output pulse)
90%
10%
t
d
t
r
t
f
t
d
: Delay time
t
r
: Rise time (Time required for the collector current to increase
from 10% to 90% of its final value)
t
f
: Fall time (Time required for the collector current to decrease
from 90% to 10% of its initial value)
;;
*2
I
C
classifications
Class
I
C
(mA)
Q
2.0 to 5.0
R
4.0 to 10.0
S
7.0 to 20.0
;
;
50Ω
R
L
I
F
, I
C
— Ta
60
60
I
F
— V
F
10
2
Ta = 25˚C
I
C
— I
F
V
CE
= 10V
Ta = 25˚C
I
F
, I
C
(mA)
50
I
F
50
I
F
(mA)
I
C
(mA)
Collector current
10
Forward current, collector current
40
40
Forward current
30
I
C
30
1
20
20
10
–1
10
10
0
– 25
0
20
40
60
80
100
0
0
0.4
0.8
1.2
1.6
2.0
2.4
10
–2
10
–1
1
10
10
2
Ambient temperature Ta (˚C )
Forward voltage V
F
(V)
Forward current I
F
(mA)
2
Transmissive Photosensors (Photo Interrupters)
CNZ1102,CNZ1108
V
F
— Ta
1.6
10
2
I
C
— V
CE
160
Ta = 25˚C
I
C
— Ta
V
CE
= 10V
I
F
= 20mA
I
C
(mA)
V
F
(V)
1.2
I
F
= 50mA
10
20mA
10mA
I
C
(%)
Relative output current
I
F
= 30mA
120
Forward voltage
Collector current
10mA
0.8
1
80
0.4
10
–1
40
0
– 40 – 20
0
20
40
60
80
100
10
–2
10
–1
1
10
10
2
0
– 40 – 20
0
20
40
60
80
100
Ambient temperature Ta (˚C )
Collector to emitter voltage V
CE
(V)
Ambient temperature Ta (˚C )
I
CEO
— Ta
10
10
3
t
r
— I
C
V
CC
= 10V
Ta = 25˚C
100
I
C
— d
Criterion
0
1
I
C
(%)
80
d
I
CEO
(µA)
10
2
t
r
(µs)
10
–1
R
L
= 1kΩ
10
500Ω
100Ω(ON1108)
100Ω(ON1102)
1
Sig.IN
V
CC
Sig. V
1
OUT
V
2
V
2
R
L
90%
10%
Relative output current
60
Dark current
10
–2
V
CE
= 24V
10V
Rise time
40
10
–3
V
1
50Ω
20
;
;
10
–1
10
–2
10
–1
10
–4
– 40 – 20
t
r
1
t
d
t
f
10
0
0
1
2
3
4
5
6
0
20
40
60
80
100
Ambient temperature Ta (˚C )
Collector current I
C
(mA)
Distance d (mm)
3
Caution for Safety
Gallium arsenide material (GaAs) is used
in this product.
DANGER
Therefore, do not burn, destroy, cut, crush, or chemi-
cally decompose the product, since gallium arsenide
material in powder or vapor form is harmful to human
health.
Observe the relevant laws and regulations when dispos-
ing of the products. Do not mix them with ordinary in-
dustrial waste or household refuse when disposing of
GaAs-containing products.
Request for your special attention and precautions in using the technical information
and semiconductors described in this material
(1) An export permit needs to be obtained from the competent authorities of the Japanese Government if any of the
products or technologies described in this material and controlled under the "Foreign Exchange and Foreign
Trade Law" is to be exported or taken out of Japan.
(2) The technical information described in this material is limited to showing representative characteristics and
applied circuit examples of the products. It does not constitute the warranting of industrial property, the granting
of relative rights, or the granting of any license.
(3) The products described in this material are intended to be used for standard applications or general electronic
equipment (such as office equipment, communications equipment, measuring instruments and household ap-
pliances).
Consult our sales staff in advance for information on the following applications:
Special applications (such as for airplanes, aerospace, automobiles, traffic control equipment, combustion
equipment, life support systems and safety devices) in which exceptional quality and reliability are required,
or if the failure or malfunction of the products may directly jeopardize life or harm the human body.
Any applications other than the standard applications intended.
(4) The products and product specifications described in this material are subject to change without notice for
reasons of modification and/or improvement. At the final stage of your design, purchasing, or use of the prod-
ucts, therefore, ask for the most up-to-date Product Standards in advance to make sure that the latest specifi-
cations satisfy your requirements.
(5) When designing your equipment, comply with the guaranteed values, in particular those of maximum rating, the
range of operating power supply voltage and heat radiation characteristics. Otherwise, we will not be liable for
any defect which may arise later in your equipment.
Even when the products are used within the guaranteed values, redundant design is recommended, so that
such equipment may not violate relevant laws or regulations because of the function of our products.
(6) When using products for which dry packing is required, observe the conditions (including shelf life and after-
unpacking standby time) agreed upon when specification sheets are individually exchanged.
(7) No part of this material may be reprinted or reproduced by any means without written permission from our
company.
Please read the following notes before using the datasheets
A. These materials are intended as a reference to assist customers with the selection of Panasonic semiconduc-
tor products best suited to their applications.
Due to modification or other reasons, any information contained in this material, such as available product
types, technical data, and so on, is subject to change without notice.
Customers are advised to contact our semiconductor sales office and obtain the latest information before
starting precise technical research and/or purchasing activities.
B. Panasonic is endeavoring to continually improve the quality and reliability of these materials but there is always
the possibility that further rectifications will be required in the future. Therefore, Panasonic will not assume any
liability for any damages arising from any errors etc. that may appear in this material.
C. These materials are solely intended for a customer's individual use.
Therefore, without the prior written approval of Panasonic, any other use such as reproducing, selling, or
distributing this material to a third party, via the Internet or in any other way, is prohibited.
2001 MAR
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参数对比
与ON1102相近的元器件有:ON1108。描述及对比如下:
型号 ON1102 ON1108
描述 For contactless SW, object detection For contactless SW, object detection
厂商名称 Panasonic(松下) Panasonic(松下)
包装说明 PISTR104-005, 4 PIN PISTR104-006, 4 PIN
Reach Compliance Code unknown unknown
Coll-Emtr Bkdn Voltage-Min 30 V 30 V
配置 SINGLE SINGLE
最大暗电源 200 nA 200 nA
最大正向电流 0.05 A 0.05 A
安装特点 THROUGH HOLE MOUNT THROUGH HOLE MOUNT
功能数量 1 1
最大通态电流 0.001 A 0.001 A
最大通态电压 30 V 30 V
标称通态集电极电流 2 mA 2 mA
最高工作温度 85 °C 85 °C
最低工作温度 -25 °C -25 °C
光电设备类型 TRANSISTOR OUTPUT SLOTTED SWITCH TRANSISTOR OUTPUT SLOTTED SWITCH
输出电路类型 Transistor Transistor
标称槽宽 3 mm 3 mm
表面贴装 NO NO
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