Transmissive Photosensors (Photo Interrupters)
ON1128S
Photo Interrupter
For contactless SW, object detection
Outline
ON1128 is a photocoupler in which a visible light emitting diode
is used as the light emitting element, and a high sensitivity
phototransistor is used as the light detecting element. The two
elements are arranged so as to face each other, and objects passing
between them are detected.
Unit : mm
Mark for indicating
LED side ø1.5
13.0±0.3
3.0±0.2
A
Device
center
3.5±0.2
0.22±0.05
Features
Highly precise position detection : 0.3 mm
Fast response : t
r
, t
f
= 6
µs
(typ.)
Small output current variation against change in temperature
Small package used for saving mounting space
Metal slits for high resolution
Absolute Maximum Ratings
(Ta = 25˚C)
Parameter
V
R
I
F
Reverse voltage (DC)
Input (Light
Forward current (DC)
emitting diode)
Power dissipation
Collector current
Output (Photo Collector to emitter voltage V
CEO
transistor)
Emitter to collector voltage V
ECO
Collector power dissipation
Operating ambient temperature
Storage temperature
P
C
*2
Temperature
/D
Forward voltage (DC)
Input
characteristics Reverse current (DC)
co
Parameter
nt
in
Electrical Characteristics
(Ta = 25˚C)
V
F
I
R
an
Collector cutoff current
Output
characteristics Collector to emitter capacitance
M
*1
Switching time measurement circuit
Sig.IN
V
CC
Pl
e
Collector current
I
C
V
CE
= 10V, I
F
= 15mA
Transfer
Collector to emitter saturation voltage V
CE(sat)
I
F
= 25mA, I
C
= 0.1mA
characteristics
Response time
t
r
, t
f*1
V
CC
= 10V, I
C
= 1mA, R
L
= 100Ω
(Input pulse)
Sig.OUT (Output pulse)
90%
10%
t
d
t
r
t
f
;;
*2
I
C
classifications
Class
I
C
(µA)
;
;
50Ω
R
L
1
50 to 155
2
145 to 450
pl d in
as
an c
e
ed lud
pl
vi
an m m es
si
tf
ed ain ai fo
ol
lo dis dis ten nte llow
ht w c
tp in o co an nan in
:// g nt n ce c g
pa U in tin t e fo
na RL ue ue ype typ ur
so a d t d
e Pr
od
ni bo yp typ
c. u e e
uc
ne t l
d
tl
at
ife
t/s e
cy
;;;
c/ st
en in
cl
;
e
;
fo
st
;
rm
;
ag
;
at
e.
io
n.
4- 0.45±0.2
A'
B'
*9.4±0.3
*2.54±0.2
2
3
6.2±0.2
M
Di ain
sc te
on na
tin nc
ue e/
d
B
7.0 min. 10.0±0.2
2.5±0.2
1
4
3.0±0.3
SEC. A-A' SEC. B-B'
2
3
1
4
Pin connection
(Note) * is dimension at the root of leads
Transmis-
sive Photo
sensors
Symbol Ratings
3
25
20
30
5
Unit
V
mA
mA
V
V
P
D*1
I
C
70
mW
*1
100
mW
˚C
˚C
T
opr
–25 to +85
T
stg
–30 to +100
ue
Input power derating ratio is
0.93 mW/˚C at Ta
≥
25˚C.
*2
Output power derating ratio is
1.33 mW/˚C at Ta
≥
25˚C.
Symbol
Conditions
min
typ
2.1
max
2.8
5
Unit
V
µA
nA
pF
V
is
I
F
= 20mA
V
R
= 3V
ce
I
CEO
C
C
*2
V
CE
= 10V
200
V
CE
= 10V, f = 1MHz
5
en
50
450
0.5
µA
µs
ai
nt
6
t
d
: Delay time
t
r
: Rise time (Time required for the collector current to increase
from 10% to 90% of its final value)
t
f
: Fall time (Time required for the collector current to decrease
from 90% to 10% of its initial value)
65
Transmissive Photosensors (Photo Interrupters)
ON1128S
I
F
, I
C
— Ta
40
32
I
F
— V
F
10
Ta = 25˚C
2
I
C
— I
F
V
CE
= 10V
Ta = 25˚C
I
F
, I
C
(mA)
I
C
(mA)
Collector current
30
I
F
I
F
(mA)
24
10
Forward current, collector current
Forward current
20
I
C
16
1
10
8
10
–1
0
– 25
0
20
40
60
80
100
0
0
0.4
0.8
1.2
1.6
2.0
2.4
10
–2
10
–1
1
10
10
2
Ambient temperature Ta (˚C )
Forward voltage V
F
(V)
Forward current I
F
(mA)
I
C
— V
CE
10
2
I
F
= 20mA
Ta = 25˚C
160
I
C
— Ta
10
I
CEO
— Ta
V
CE
= 10V
I
C
(mA)
10
–1
Dark current
0
20
40
60
80
100
1
Relative output current
Collector current
I
CEO
(µA)
10
I
C
(%)
120
1
80
10
–1
40
10
–2
10
–2
10
–1
1
10
10
2
0
– 40 – 20
10
–3
– 40 – 20
0
20
40
60
80 100 120
Collector to emitter voltage V
CE
(V)
Ambient temperature Ta (˚C )
Ambient temperature Ta (˚C )
t
r
— I
C
10
3
V
CC
= 10V
Ta = 25˚C
100
I
C
— d
V
CE
= 10V
Ta = 25˚C
I
F
= 15mA
I
C
(%)
80
Criterion
0
d
60
10
2
t
r
(µs)
500Ω
10
100Ω
Relative output current
R
L
= 1kΩ
Rise time
40
1
Sig.IN
V
CC
Sig. V
1
OUT
V
2
V
2
R
L
90%
10%
20
;;
V
1
50Ω
10
–1
10
–2
10
–1
t
r
1
t
d
t
f
10
0
0
1
2
3
4
5
6
Collector current I
C
(mA)
Distance d (mm)
66
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