Integrated Photosensors
CNZ1402A/B, CNZ1403A/B
(ON1402A/B, ON1403A/B)
Integrated Photosensors
CNZ1402A/B
Unit : mm
0.45±0.1
For contactless SW, object detection
Overview
CNZ1402A/B and CNZ1403A/B are photocouplers in which a
high efficiency GaAs infrared light emitting diode as the light emitting
element, and a photodiode and a signal processing circuit as a light
detecting element are intergrated on a single chip.
The two elements are arranged so as to face each other, and objects
passing between them are detected.
Mark for
indicating
LED side
2.5±0.2
2.0±0.2
2.2±0.2
25.0±0.35
13.0
5.0±0.2
A
6.2±0.2
0.45±0.1
Device
center
10.0±0.2
Features
Built-in Schmitt circuit for strong noise-withstanding capability
Large output current
Open-collector output
Output transistors turn on and off (two types) when light is shined
CNZ1402A/CNZ1403A : Normally ON type
CNZ1402B/CNZ1403B : Normally OFF type
7.3±2.0
A'
(10.0)
2-ø3.2±0.2
2
5- 0.45±0.2
(2.54)
1
(Note) ( ) Dimension is reference
Absolute Maximum Ratings
(Ta = 25˚C)
Parameter
Reverse voltage (DC)
Input (Light
Forward current (DC)
emitting diode)
Power dissipation
Output current
Output
(Photo IC)
Output voltage
Supply voltage
Power dissipation
Temperature
*1
CNZ1403A/B
Unit
V
mW
mA
V
V
mW
˚C
˚C
1
2
13.0
5.0±0.2
A
2.0±0.2
2.2±0.2
Symbol Ratings
V
R
I
F
P
D*1
I
O
V
O
V
CC
P
C*2
3
50
75
20
30
16
200
mA
Mark for
indicating
LED side
;
;;;
SEC. A-A'
3
4
5
6.2
2-R0.5
Device
center
5- 0.45
(2.54)
3
4
5
(2.54)
1: Anode
2: Cathode
3: V
CC
4: V
O
5: GND
Unit : mm
0.45±0.1
10.0
2.5±0.2
7.3±2.0
A'
(2.54)
(10.0)
Operating ambient temperature
Storage temperature
T
opr
–20 to +85
T
stg
–30 to +100
Input power derating ratio is 1.0 mW/˚C at Ta
≥
25˚C.
*2
Output power derating ratio is 2.67 mW/˚C at Ta
≥
25˚C.
Pin Connection
CNZ1402A,CNZ1403A
(Normally ON type)
(Note) ( ) Dimension is reference
CNZ1402B,CNZ1403B
(Normally OFF type)
Const. Voltage Cir.
Anode 1
3 V
CC
4 V
O
Anode 1
Const. Voltage Cir.
Cathode 2
5 GND
Cathode 2
Note) The part numbers in the parenthesis show conventional part number.
;;
;;
SEC. A-A'
1: Anode
2: Cathode
3: V
CC
4: V
O
5: GND
3 V
CC
4 V
CC
5 GND
1
CNZ1402A/B,CNZ1403A/B
Electrical Characteristics
(Ta = 25˚C)
Parameter
Forward voltage (DC)
Input
Reverse current (DC)
characteristics
Capacitance between terminals
“H” Output current
Output
characteristics “L” Output voltage
Threshold input current
Transfer
characteristics
Hysteresis
Response time
Symbol
V
F
I
R
C
t
I
OH
V
OL
V
R
= 3V
V
R
= 0V, f = 1MHz
Conditions
I
F
= 50mA
Integrated Photosensors
min
typ
1.2
50
max
1.5
10
100
Unit
V
µA
pF
µA
V
mA
µs
µs
V
CC
= 5V, V
OH
= 30V, I
F
= 0mA, (I
F
= 10mA)
V
CC
= 5V, I
OL
= 20mA, I
F
= 10mA, (I
F
= 0mA)
0.15
5
0.75
6
10
0.4
10
I
FH→L
(I
FL→H
) V
CC
= 5V
I
FLH
/I
FHL
(I
FHL
/I
FLH
) V
CC
= 5V, R
L
= 240Ω
t
PHL
(t
PLH
)
*
V
CC
= 5V, I
FP
= 10mA, R
L
= 100Ω
t
PLH
(t
PHL
)
*
V
CC
= 5V, I
FP
= 10mA, R
L
= 100Ω
) shows Normally OFF type.
Note) Normally ON type characteristics is shown, (
*
Switching time measurement circuit
Sig.IN
Const. Voltage Cir.
V
CC
=
5V
R
L
=
100Ω
V
O
(Input pulse)
(Output pulse)
1.5V
t
PHL
: H
t
PLH
: L
L Propagation time
H Propagation time
;;;
;
;
50Ω
t
PHL
t
PLH
I
F
, I
O
— Ta
I
FHL
, I
FLH
(%)
160
I
FT
— Ta
200
I
FHL
(I
FLH
)
V
OL
— Ta
V
CC
= 5V
I
OL
= 20mA
60
Forward current , output current I
F
, I
O
(mA)
50
120
V
OL
(mV)
I
FLH
(I
FHL
)
I
F
180
40
Relative threshold input current
30
I
O
80
Low level output voltage
160
20
40
140
10
0
– 25
0
20
40
60
80
100
0
– 40 – 20
0
20
40
60
80
100
120
– 40 – 20
0
20
40
60
80
100
Ambient temperature Ta (˚C )
Ambient temperature Ta (˚C )
Ambient temperature Ta (˚C )
t
pd
— I
F
CNZ1402A,CNZ1403A
V
CC
Sig.
IN
Const. Voltage Cir.
R
V
CC
= 5V
Ta = 25˚C
R
L
= 100Ω
t
put
:H L
(Fall Time)
t
pLN
:L H
(Rise Time)
t
PLH
120
Detecting position characteristics (1)
d = 0.08mm
CNZ1403A
V
CC
= 5V
Ta = 25˚C
R
L
= 240Ω
I
F
= 10mA
Criterion
0
d
120
Detecting position characteristics (2)
d = 0.08mm
CNZ1403B
V
CC
= 5V
Ta = 25˚C
R
L
= 240Ω
I
F
= 10mA
Criterion
0
d
t
PHL
, t
PLH
(µs)
;;
1.5V
Sig.
OUT
t
PHL PLH
t
I
O
(%)
80
I
O
(%)
Relative output current
L
100
100
80
20
15
10
Relative output current
60
60
Response time
40
40
5
0
20
20
t
PHL
0
5
10
15
20
25
30
35
0
0
1
2
3
4
5
6
1
2
3
4
5
6
Forward current I
F
(mA)
Distance d (mm)
Distance d (mm)
2
Caution for Safety
Gallium arsenide material (GaAs) is used
in this product.
DANGER
Therefore, do not burn, destroy, cut, crush, or chemi-
cally decompose the product, since gallium arsenide
material in powder or vapor form is harmful to human
health.
Observe the relevant laws and regulations when dispos-
ing of the products. Do not mix them with ordinary in-
dustrial waste or household refuse when disposing of
GaAs-containing products.
Request for your special attention and precautions in using the technical information
and semiconductors described in this material
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applied circuit examples of the products. It does not constitute the warranting of industrial property, the granting
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Consult our sales staff in advance for information on the following applications:
•
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•
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2001 MAR