Integrated Photosensors
CNZ1414A
(ON1414A)
Integrated Photosensor
A
(0.3)
Unit : mm
SEC. A-A'
Device
center
4.2±0.1
1.2
0.5
+0.15
–0
(R0.1)
4.2
3.0±0.05
(2-C0.3)
Features
Ultraminiature : 4.2
×
4.2 mm (height : 5.2 mm)
Low voltage operation, low current consumption
(V
CC
= 2.2 to 7 V, I
CCL
=0.8 mA typ.)
Fast response : t
PHL
= 3
µs,
t
PLH
= 8
µs
(typ.)
Highly precise position detection (slit width : 0.3 mm)
Gap width : 1.2 mm
With attachment positioning pin
4.0 min.
(2-C0.3) 2-ø0.8±0.05
2-0.25
Gate the rest
0.3 max.
*3.2
3-0.5
*2-1.27
4: V
O
5: GND
1
2
3
4
5
1: Anode
2: Cathode
3: V
CC
(Note)
1. Tolerance unless otherwise specified is
±0.2
2. ( ) Dimension is reference
3. * is dimension at the root of leads
4. Burrs should be less than 0.15mm
Absolute Maximum Ratings
(Ta = 25˚C)
Parameter
Reverse voltage (DC)
Input (Light
Forward current (DC)
emitting diode)
Power dissipation
Output current
Output
(Photo IC)
Output voltage
Supply voltage
Power dissipation
Temperature
*1
*2
Symbol Ratings
V
R
I
F
P
D*1
I
O
V
O
V
CC
P
C*2
T
opr
6
50
75
8
12
7
80
–25 to +85
Unit
V
mA
mW
mA
V
V
mW
˚C
˚C
Operating ambient temperature
Storage temperature
T
stg
– 40 to +100
Input power derating ratio is 1.0 mW/˚C at Ta
≥
25˚C.
Output power derating ratio is 1.07 mW/˚C at Ta
≥
25˚C.
Pin Connection
CNZ1414A
(Normally ON type)
Const. Voltage Cir.
Anode 1
3 V
CC
4 V
O
Cathode 2
5 GND
Note) The part number in the parenthesis shows conventional part number.
Not soldered 1.0 max.
5.2
3.0
(1.0)
CNZ1414A is ultraminiature, highly reliable transmissive
photosensor that has a high efficiency GaAs infrared light emitting
diode chip and a low voltage operation type high sensitivity Si-
integrated-photodetector chip wich are in a double molded resin
package.
A'
;;
;;
(1.5)
Overview
1
Integrated Photosensors
Electrical Characteristics
(Ta = 25˚C)
Parameter
Forward voltage (DC)
Input
characteristics Reverse current (DC)
“H” Output current
“L” Output voltage
Output
Operating power voltage
characteristics
“L” Supply current
“H” Supply current
Threshold input current
Hysteresis
Transfer
characteristics
Response time
*
CNZ1414A
Symbol
V
F
I
R
I
OH
V
OL
V
CC
I
CCL
I
CCH
I
FH→L
I
FLH
/I
FHL
t
PHL*
t
PLH*
I
F
= 20mA
V
R
= 3V
Conditions
min
typ
1.2
max
1.4
10
100
Unit
V
µA
µA
V
V
mA
mA
mA
µs
µs
V
CC
= 5V, V
OH
= 12V, I
F
= 0mA
V
CC
= 5V, I
OL
= 5mA, I
F
= 2mA
2.2
V
CC
= 5V, I
F
= 2mA
V
CC
= 5V, I
F
= 0mA
V
CC
= 2.2V
V
CC
= 2.2V
V
CC
= 5V, I
F
= 2mA, R
L
= 1kΩ
0.85
3
8
0.8
0.8
0.15
0.4
7
2
2
2
Switching time measurement circuit
Sig.IN
Const. Voltage Cir.
V
CC
R
L
=
1kΩ
Sig.OUT
50%
(Input pulse)
(Output pulse)
V
OH
1.5V
V
OL
t
PHL
t
PLH
t
PHL
: H
t
PLH
: L
L Propagation time
H Propagation time
;;;
;;;
Soldering bath
;
;
;;
Important Information for Soldering
1. Soldering Position
A
50Ω
A : Make sure the distance is 0.1 mm or more.
2. Solder Temperature and Soldering Time
Temperature : 260˚C or less
Time : within 3 seconds
Note) Avoid using reflow soldering methods.
3. Other Issues
1) Soldering should not create excessive thermal or mechanical stress on the case package or leads.
Excessive stress may cause changes in the shape or characteristics of the package or leads.
2) Be careful not to allow solder, flux, solvents, etc. to remain on the case package.
Doing so may cause problems related to transmission characteristics, etc.
Important Information Related to Power Source Voltage
In order to stabilize the power line, use a decoupling capacitor of
approximately 0.1
µF
between V
CC
and the GND line near the device .
V
CC
R
L
V
O
0.1µF
GND
V
CC
V
O
GND
2
CNZ1414A
Integrated Photosensors
I
F
, I
O
— Ta
60
60
I
F
— V
F
1.6
Ta = 25˚C
V
F
— Ta
Forward current , output current I
F
, I
O
(mA)
50
I
F
50
I
F
= 50mA
I
F
(mA)
V
F
(V)
1.2
10mA
40
40
Forward current
Forward voltage
1mA
0.8
30
30
20
20
0.4
10
I
O
10
0
– 25
0
20
40
60
80
100
0
0
0.4
0.8
1.2
1.6
2.0
2.4
0
– 40 – 20
0
20
40
60
80
100
Ambient temperature Ta (˚C )
Forward voltage V
F
(V)
Ambient temperature Ta (˚C )
I
FT
— V
CC
I
FHL
, I
FLH
(%)
I
FHL
, I
FLH
(%)
120
Ta = 25˚C
160
V
CC
= 2.2V
I
FT
— Ta
0.28
V
OL
— Ta
V
CC
= 5V
I
OL
= 5mA
100
I
FHL
I
FHL
120
V
OL
(V)
I
FLH
0.24
0.20
0.16
0.12
0.08
0.04
0
– 40 – 20
Relative threshold input current
Relative threshold input current
I
FHL
80
80
60
40
40
0
2
4
6
8
0
– 40 – 20
0
20
40
60
80
100
Low level output voltage
0
20
40
60
80
100
Supply voltage V
CC
(V)
Ambient temperature Ta (˚C )
Ambient temperature Ta (˚C )
I
CC
— Ta
1.2
V
CC
= 5V
1.0
12
14
t
PHL
, t
PLH
— I
F
V
CC
= 5V
R
L
= 1kΩ
Ta = 25˚C
t
PLH
10
8
6
4
2
0
120
Detecting position characteristics
V
CC
= 5V
Ta = 25˚C
I
F
= 2mA
Criterion
0
80
d
0.8
I
CCL
I
CCH
t
PHL
, t
PLH
(µs)
I
CC
(mA)
Relative output current
t
PHL
0
5
10
15
20
25
30
Supply current
I
O
(%)
100
0.6
60
Response time
0.4
40
0.2
20
0
-40
-20
0
20
40
60
80
100
0
1.8
1.9
2.0
2.1
2.2
2.3
2.4
2.5
Ambient temperature Ta (˚C )
Forward current I
F
(mA)
Distance d (mm)
3
Caution for Safety
Gallium arsenide material (GaAs) is used
in this product.
DANGER
Therefore, do not burn, destroy, cut, crush, or chemi-
cally decompose the product, since gallium arsenide
material in powder or vapor form is harmful to human
health.
Observe the relevant laws and regulations when dispos-
ing of the products. Do not mix them with ordinary in-
dustrial waste or household refuse when disposing of
GaAs-containing products.
Request for your special attention and precautions in using the technical information
and semiconductors described in this material
(1) An export permit needs to be obtained from the competent authorities of the Japanese Government if any of the
products or technologies described in this material and controlled under the "Foreign Exchange and Foreign
Trade Law" is to be exported or taken out of Japan.
(2) The technical information described in this material is limited to showing representative characteristics and
applied circuit examples of the products. It does not constitute the warranting of industrial property, the granting
of relative rights, or the granting of any license.
(3) The products described in this material are intended to be used for standard applications or general electronic
equipment (such as office equipment, communications equipment, measuring instruments and household ap-
pliances).
Consult our sales staff in advance for information on the following applications:
•
Special applications (such as for airplanes, aerospace, automobiles, traffic control equipment, combustion
equipment, life support systems and safety devices) in which exceptional quality and reliability are required,
or if the failure or malfunction of the products may directly jeopardize life or harm the human body.
•
Any applications other than the standard applications intended.
(4) The products and product specifications described in this material are subject to change without notice for
reasons of modification and/or improvement. At the final stage of your design, purchasing, or use of the prod-
ucts, therefore, ask for the most up-to-date Product Standards in advance to make sure that the latest specifi-
cations satisfy your requirements.
(5) When designing your equipment, comply with the guaranteed values, in particular those of maximum rating, the
range of operating power supply voltage and heat radiation characteristics. Otherwise, we will not be liable for
any defect which may arise later in your equipment.
Even when the products are used within the guaranteed values, redundant design is recommended, so that
such equipment may not violate relevant laws or regulations because of the function of our products.
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Please read the following notes before using the datasheets
A. These materials are intended as a reference to assist customers with the selection of Panasonic semiconduc-
tor products best suited to their applications.
Due to modification or other reasons, any information contained in this material, such as available product
types, technical data, and so on, is subject to change without notice.
Customers are advised to contact our semiconductor sales office and obtain the latest information before
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2001 MAR
