Reflective Photosensors (Photo Reflectors)
ON2280
Reflective Photosensor
Outline
ONN2280 is a small, thin reflective photosensor consisting of a
high efficiency GaAs infrared light emitting diode which is integrated
with a high sensitivity Darlington phototransistor is used as the
photodetector in a single resin package.
Unit : mm
Mark for indicating
emitter side
C0.5
1
3
Features
9.0±1.0
Ultraminiature : 2.7
×
3.4 mm
High current-transfer ratio
Visible light cutoff resin is used
Detection of paper, film and cloth
Detection of rotary positioning
Detection of position and edge
Liquid level sensor
Start, end mark detection of magnetic tape
Absolute Maximum Ratings
(Ta = 25˚C)
Parameter
V
R
I
F
Symbol Ratings
3
50
30
20
5
Unit
V
mA
mA
V
V
Reverse voltage (DC)
Input (Light
Forward current (DC)
emitting diode)
Power dissipation
Collector current
P
D*1
I
C
75
mW
Output (Photo Collector to emitter voltage
transistor)
Emitter to collector voltage
V
CEO
V
ECO
P
C*2
T
opr
*1
Collector power dissipation
Storage temperature
75
mW
˚C
˚C
nt
in
Temperature
Operating ambient temperature
–25 to +85
T
stg
–30 to +100
Input power derating ratio is
1.0 mW/˚C at Ta
≥
25˚C.
*2
Output power derating ratio is
1.0 mW/˚C at Ta
≥
25˚C.
en
Forward voltage (DC)
Input
Reverse current (DC)
characteristics
Capacitance between terminals
/D
Parameter
is
co
Electrical Characteristics
(Ta = 25˚C)
V
F
I
R
C
t
ue
Symbol
Conditions
min
ce
I
F
= 50mA
V
R
= 3V
an
V
R
= 0V, f = 1MHz
V
CE
= 10V
nt
Output characteristics Collector cutoff current
I
CEO
M
ai
Collector current
I
C*1, *2
V
CC
= 5V, I
F
= 2mA, R
L
= 100Ω, d = 1mm
0.46
Leakage current
I
D
V
CC
= 5V, I
F
= 2mA, R
L
= 100Ω
Transfer
characteristics Collector to emitter saturation voltage V
CE(sat)
I
F
= 5mA, I
C
= 0.5mA
Pl
e
Response time
*1
I
C
t
r*3
, t
f*4
V
CC
= 10V, I
C
= 1mA, R
L
= 100Ω
*2
classifications
Class
I
C
(mA)
Q
0.46 to 1.75
R
1.3 to 4.95
S
3.15 to 12.0
Output current Measurement Method
*3
*4
Time required for the collector current to increase from 10% to 90% of its final value.
90%
Time required for the collector current to decrease from
10%
90% to 10% of its initial value.
t
r
t
f
;;
;
;
I
F
I
C
R
L
V
CC
;
;;
3
4 1
2
Pin connection
Application
pl d in
as
an c
e
ed lud
pl
vi
an m m es
si
tf
ed ain ai fo
ol
lo dis dis ten nte llow
ht w c
tp in o co an nan in
:// g nt n ce c g
pa U in tin t e fo
na RL ue ue ype typ ur
so a d t d
e Pr
od
ni bo yp typ
c. u e e
uc
ne t l
d
tl
at
ife
t/s e
cy
c/ st
en in
cl
e
fo
st
rm
ag
at
e.
io
n.
2.7±0.2
0.4
4-0.7
4-0.5
±0.1
M
Di ain
sc te
on na
tin nc
ue e/
d
9.0±1.0
2.0±0.2
2
1.8
4
2.0±0.2
Chip
center
0.5
0.15
1.5±0.2
3.4±0.3
Reflective
Photo
sensors
typ
1.3
30
max
1.5
10
Unit
V
µA
pF
0.01
1.0
µA
12.0
2.0
1.5
mA
µA
V
µs
150
;
;;;
;;;
;;;
;
;;;
Evaporated Al
Glass plate
(t = 1mm)
95
Reflective Photosensors (Photo Reflectors)
ON2280
I
F
, I
C
— Ta
60
60
I
F
— V
F
1.6
Ta = 25˚C
V
F
— Ta
I
F
, I
C
(mA)
50
I
F
50
I
F
= 50mA
I
F
(mA)
V
F
(V)
1.2
10mA
Forward current, collector current
40
I
C
40
Forward current
Forward voltage
1mA
0.8
30
30
20
20
0.4
10
10
0
– 25
0
20
40
60
80
100
0
0
0.4
0.8
1.2
1.6
2.0
2.4
0
– 40 – 20
0
20
40
60
80
100
Ambient temperature Ta (˚C )
Forward voltage V
F
(V)
Ambient temperature Ta (˚C )
I
C
— I
F
10
3
V
CC
= 5V
Ta = 25˚C
R
L
= 100Ω
d = 1mm
10
2
I
C
— V
CE
160
Ta = 25˚C
V
CC
= 5V
I
F
= 2mA
R
L
= 100Ω
120
I
C
— Ta
I
C
(mA)
10
2
I
C
(mA)
10
I
F
= 10mA
10
1
2mA
Relative output current
10
2
5mA
Collector current
Collector current
I
C
(%)
80
1
10
–1
1mA
40
10
–1
1
10
10
2
10
3
10
–2
10
–1
1
10
0
– 40 – 20
0
20
40
60
80
100
Forward current I
F
(mA)
Collector to emitter voltage V
CE
(V)
Ambient temperature Ta (˚C )
I
CEO
— Ta
10
2
V
CE
= 10V
10
4
t
r
— I
C
V
CC
= 10V
Ta = 25˚C
100
I
C
— d
80
I
CEO
(µA)
10
10
3
R
L
= 1kΩ
500Ω
100Ω
t
r
(µs)
Relative output current
60
Dark current
Rise time
1
10
2
40
10
–1
10
20
10
–2
– 40 – 20
0
20
40
60
80
100
1
10
–2
10
–1
1
10
0
0
Ambient temperature Ta (˚C )
Collector current I
C
(mA)
96
;
;;
d
2
4
6
8
10
V
CC
= 5V
I
F
= 2mA
I
C
(%)
Distance d (mm)
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semiconductors described in this book
(1)
If any of the products or technical information described in this book is to be exported or provided to non-residents, the laws and
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other company. Therefore, no responsibility is assumed by our company as to the infringement upon any such right owned by any
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equipment, communications equipment, measuring instruments and household appliances).
Consult our sales staff in advance for information on the following applications:
–
Special applications (such as for airplanes, aerospace, automobiles, traffic control equipment, combustion equipment, life support
systems and safety devices) in which exceptional quality and reliability are required, or if the failure or malfunction of the prod-
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–
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provement. At the final stage of your design, purchasing, or use of the products, therefore, ask for the most up-to-date Product
Standards in advance to make sure that the latest specifications satisfy your requirements.
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(operating power supply voltage and operating environment etc.). Especially, please be careful not to exceed the range of absolute
maximum rating on the transient state, such as power-on, power-off and mode-switching. Otherwise, we will not be liable for any
defect which may arise later in your equipment.
Even when the products are used within the guaranteed values, take into the consideration of incidence of break down and failure
mode, possible to occur to semiconductor products. Measures on the systems such as redundant design, arresting the spread of fire
or preventing glitch are recommended in order to prevent physical injury, fire, social damages, for example, by using the products.
(6) Comply with the instructions for use in order to prevent breakdown and characteristics change due to external factors (ESD, EOS,
thermal stress and mechanical stress) at the time of handling, mounting or at customer's process. When using products for which
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