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ON3131S

Transistor Output Optocoupler, 1-Element, 5000V Isolation, PCTFR104-001, DIP-4

器件类别:光电子/LED    光电   

厂商名称:Panasonic(松下)

厂商官网:http://www.panasonic.co.jp/semicon/e-index.html

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器件参数
参数名称
属性值
厂商名称
Panasonic(松下)
包装说明
PCTFR104-001, DIP-4
Reach Compliance Code
unknown
其他特性
UL RECOGNIZED
Coll-Emtr Bkdn Voltage-Min
80 V
配置
SINGLE
当前传输比率-最小值
200%
标称电流传输比
200%
最大暗电源
100 nA
最大正向电流
0.05 A
最大正向电压
1.5 V
最大绝缘电压
5000 V
安装特点
THROUGH HOLE MOUNT
元件数量
1
最大通态电流
0.05 A
最高工作温度
100 °C
最低工作温度
-30 °C
光电设备类型
TRANSISTOR OUTPUT OPTOCOUPLER
最大功率耗散
0.15 W
表面贴装
NO
文档预览
This product complies with the RoHS Directive (EU 2002/95/EC).
Optoisolators (Photocouplers)
CNC1S101
(ON3131)
Optoisolators
Overview
CNC1S101 is a DIL type 4-pin single-channel optoisolator which is housed in a small package.
The CNC1S101 has a number of good features, including high I/O isolation voltage and current transfer ratio (CTR), as well as high speed
response.
Applications
Switching power supply
Computer terminal equipment
System equipment, measuring equipment
Telephones, copier and vending machines
Televisions, VCRs, and other consumer electronics products
Medical equipment and phsical and chemical equipment
Signal transmission between circuits with different potentials and impedances
Absolute Maximum Ratings
T
a
= 25°C
Parameter
Power dissipation
*1
Forward current
Reverse voltage
on
tin
Input
(Light emitting diode)
Pulse forward current
*2
Ma
int
en
Output
(Photo transistor)
Emitter-collector voltage
(Base open)
Collector current
Collector power dissipation
*3
an
ce
Collector-emitter voltage
(Base open)
Isolation voltage, input to output
*4
Total power dissipation
Operating ambient temperature
Storage temperature
Pl
Note) *1: Input power derating ratio is 0.75 mW/°C at T
a
25°C
*2: Pulse width
100
μs,
repeat 100 pps
*3: Output power derating ratio is 1.5 mW/°C at T
a
25°C
*4: AC 1 min. RH
<
60%
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Symbol
P
D
I
F
Rating
75
50
1
6
Unit
mA
A
V
V
V
mW
I
FP
V
R
V
CEO
V
ECO
I
C
80
7
50
mA
P
C
P
T
T
opr
T
stg
150
200
–30 to +100
–55 to +125
mW
mW
°C
°C
V
ISO
5 000
V[rms]
Note) The part number in the parenthesis shows conventional part number.
SHF00014AEK
M
ain
Di
sc te
on na
tin nc
ue e/
d
High DC current transfer ratio: CTR
100%
High I/O isolation voltage: V
ISO
= 5 000 V[rms] (min.)
Fast response: t
r
= 2
μs,
t
f
= 3
μs
(typ.)
Small collector-emitter cutoff current (base open): I
CEO
100 nA
UL listed (UL File No. E79920)
Features
/D
isc
ue
di
Publication date: October 2008
1
This product complies with the RoHS Directive (EU 2002/95/EC).
CNC1S101
Electrical-Optical Characteristics
T
a
= 25°C±3°C
Parameter
Input
Forward voltage
characteristics
Terminal capacitance
Collector-emitter voltage
(Base open)
Emitter-collector voltage
Output
characteristics (Base open)
Collector-emitter cutoff current
(Base open)
Collector-emitter capacitance
DC current transfer ratio
*1, *2
Reverse current
Symbol
I
R
V
F
C
t
V
CEO
V
ECO
I
CEO
C
C
V
R
= 3 V
I
F
= 50 mA
V
R
= 0 V, f = 1 MHz
I
C
= 100
μA
I
E
= 10
μA
V
CE
= 20 V
80
7
5
10
600
0.7
2
3
100
1.35
15
Conditions
Min
Typ
Max
10
1.50
Unit
μA
V
pF
V
V
nA
pF
%
pF
W
μs
μs
V
Isolation capacitance, input to output
Transfer
Isolation resistance, input to output
characteristics
Rise time
*3
Fall time
*4
Collector-emitter saturation voltage
V
CE(sat)
Note) 1. Input and output are practiced by electricity.
3. *1:
I
C
I
F
2. This device is designed by disregarding radiation.
CTR
×
100%
*2: Rank classification
Rank
R
CTR (%)
100 to 300
Ma
int
en
an
ce
/D
isc
on
tin
*3: t
r
: Time required for the collector current to increase from 10% to 90% of its
final
value
*4: t
f
: Time required for the collector current to decrease from 90% to 10% of its initial value
2
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C
ISO
t
r
f = 1 MHz
R
ISO
t
f
V
ISO
= 500 V
10
11
V
CC
= 10 V, I
C
= 2 mA,
R
L
= 100
W
I
F
= 20 mA, I
C
= 1 mA
0.1
0.2
S
V
No-rank
200 to 600
80 to 130
100 to 600
SHF00014AEK
M
ain
Di
sc te
on na
tin nc
ue e/
d
V
CE
= 10 V, f = 1 MHz
V
CE
= 5 V, I
F
= 5 mA
CTR
100
ue
di
This product complies with the RoHS Directive (EU 2002/95/EC).
CNC1S101
Collector power dissipation P
C
, Power dissipation P
D
(mW)
P
C
120
Forward current I
F
, Collector current I
C
(mA)
160
P
C
, P
D
T
a
60
I
F
, I
C
I
F
, I
C
T
a
10
2
I
C
V
CE
T
a
=
25°C
I
F
=
50 mA
50
Collector current I
C
(mA)
40
10
20 mA
10 mA
5 mA
80
P
D
30
20
1
2 mA
M
ain
Di
sc te
on na
tin nc
ue e/
d
40
10
0
−30
20
60
100
0
−30
0
20
40
60
80
100
10
−1
0
0.1
0.2
0.3
0.4
0.5
0.6
40
I
C
V
CE
I
F
=
50 mA
40 mA
60
Collector current I
C
(mA)
30 mA
Forward current I
F
(mA)
30
Relative collector current
∆I
C
(%)
50
25 mA
40
20
20 mA
15 mA
30
10
12 mA
10 mA
9 mA 8 mA
7 mA
6 mA
5 mA
20
0
0
8
16
24
4 mA
3 mA
2 mA
1 mA
32
40
10
0
0
Collector-emitter voltage V
CE
(V)
Collector-emitter cutoff current (Base open) I
CEO
(µA)
on
10
tin
I
CEO
T
a
ce
1
/D
isc
V
CE
=
30 V
10
2
20 V
10 V
Collector current I
C
(mA)
10
Ma
int
en
10
−1
20 mA
10 mA
5 mA
Collector current I
C
(mA)
10
−2
1
10
−3
10
−4
−40
0
40
80
10
−1
Pl
0
Ambient temperature T
a
(°C)
Collector-emitter saturation voltage V
CE(sat)
(V)
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I
F
V
F
T
a
=
25°C
160
Ambient temperature T
a
(°C)
Ambient temperature T
a
(°C)
Collector-emitter voltage V
CE
(V)
∆I
C
T
a
V
CC
=
5 V
120
1 mA
I
F
=
10 mA
5 mA
80
10 mA
5 mA
1 mA
40
0.9
1.0
1.1
1.2
1.3
1.4
0
−50
0
50
100
Forward voltage V
F
(V)
ue
di
Ambient temperature T
a
(°C)
I
C
V
CE(sat)
T
a
=
25°C
10
2
I
C
I
F
V
CC
=
10 V
T
a
=
25°C
I
F
=
50 mA
10
an
1
2 mA
10
−1
0.1
0.2
0.3
0.4
0.5
0.6
10
−2
10
−1
1
10
10
2
Forward current I
F
(mA)
SHF00014AEK
3
This product complies with the RoHS Directive (EU 2002/95/EC).
CNC1S101
1.6
V
F
T
a
I
F
=
50 mA
10
2
t
r
I
C
V
CC
=
10 V
T
a
=
25°C
10
2
t
f
I
C
V
CC
=
10 V
T
a
=
25°C
R
L
=
1 kΩ
500
100
Forward voltage V
F
(V)
1.2
10
R
L
=
1 kΩ
500
100
10
Rise time t
r
(µs)
0.8
1 mA
1
Fall time t
f
(µs)
10 mA
1
M
ain
Di
sc te
on na
tin nc
ue e/
d
Sig.
out
50
Sig.
out
R
L
0
−40
0
40
80
10
−2
10
−1
0.4
10
−1
Sig. in
V
CC
10
−1
Sig. in
V
CC
Sig.
out
R
L
90%
10%
t
r
t
d
90%
10%
t
f
Sig.
out
50
1
10
10
2
10
−2
10
−1
t
r
10
t
d
t
f
10
2
1
P
f
10
T
a
=
25°C
Relative power output P (dB)
1
+10
V
10
−1
Sig. in
10
−2
10
−3
1
10
10
2
10
3
Frequency f (kHz)
4
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Measurement circuit of
frequency characteristics
+10
V
50 kΩ
100
µF
16 V
Sig. out
5 kΩ
50
Sig. out
50
SHF00014AEK
Ambient temperature T
a
(°C)
Collector current I
C
(mA)
Collector current I
C
(mA)
I
F
=
5 mA
2 mA
Ma
int
en
an
ce
/D
isc
on
tin
ue
di
50
Pin name
1: Anode
2: Cathode
3: Emitter
4: Collector
Internal Connection
Package (Unit: mm)
2
1
3
4
LCTXXN4Z0001
Ma
int
en
an
ce
/D
isc
on
tin
ue
di
Top View
This product complies with the RoHS Directive (EU 2002/95/EC).
Pl
SHF00014AEK
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M
ain
Di
sc te
on na
tin nc
ue e/
d
CNC1S101
5
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参数对比
与ON3131S相近的元器件有:CNC1S101V。描述及对比如下:
型号 ON3131S CNC1S101V
描述 Transistor Output Optocoupler, 1-Element, 5000V Isolation, PCTFR104-001, DIP-4 Transistor Output Optocoupler, 1-Element, 5000V Isolation, PCTFR104-001, DIP-4
厂商名称 Panasonic(松下) Panasonic(松下)
包装说明 PCTFR104-001, DIP-4 PCTFR104-001, DIP-4
Reach Compliance Code unknown unknown
其他特性 UL RECOGNIZED UL RECOGNIZED
Coll-Emtr Bkdn Voltage-Min 80 V 80 V
配置 SINGLE SINGLE
标称电流传输比 200% 80%
最大暗电源 100 nA 100 nA
最大正向电流 0.05 A 0.05 A
最大绝缘电压 5000 V 5000 V
元件数量 1 1
最高工作温度 100 °C 100 °C
最低工作温度 -30 °C -30 °C
光电设备类型 TRANSISTOR OUTPUT OPTOCOUPLER TRANSISTOR OUTPUT OPTOCOUPLER
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